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81. 发明授权

US5410172A Thin film transistor and preparation thereof 失效
标题翻译：薄膜晶体管及其制备方法
公开(公告)号：US5410172A
公开(公告)日：1995-04-25
申请号：US996887
申请日：1992-12-23
申请人： Toru Koizumi , Jun Nakayama , Hidemasa Mizutani
发明人： Toru Koizumi , Jun Nakayama , Hidemasa Mizutani
IPC分类号： H01L27/12 , G02F1/136 , G02F1/1368 , H01L21/265 , H01L21/336 , H01L27/146 , H01L29/06 , H01L29/08 , H01L29/78 , H01L29/786
CPC分类号： H01L29/6678 , H01L21/26586 , H01L29/0657 , H01L29/0847 , H01L29/66772 , H01L29/78 , H01L29/7836 , H01L29/78618 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78657
摘要： A thin film transistor is provided with a semiconductor layer disposed on an insulating layer region having a channel region and a plurality of main electrode regions having an impurity concentration higher than an impurity concentration of the channel region. A second insulating layer region is disposed on the semiconductor region layer, and a control electrode is disposed on the second insulating layer. An interface is defined between at least one of the main electrode regions and the channel regions through a thickness of the semiconductor layer becoming increasing remote from its side of the control electrode in the direction from the second insulating layer region toward the first insulating layer region. An original point is defined as a position of the interface immediately beneath the insulating layer region. When a layer thickness of the semiconductor region is defined as T.sub.SOI and a maximum distance of the semiconductor layer region in the direction normal to a layer thickness is defined as L.sub.UP a value, the ratio of L.sub.UP /T.sub.SOI is at least 0.35.
摘要翻译：薄膜晶体管设置有设置在具有沟道区域和具有高于沟道区域的杂质浓度的杂质浓度的多个主电极区域的绝缘层区域上的半导体层。第二绝缘层区域设置在半导体区域层上，并且控制电极设置在第二绝缘层上。通过半导体层的厚度，在从第二绝缘层区域朝向第一绝缘层区域的方向远离其控制电极的侧面，在至少一个主电极区域和沟道区域之间界定界面。原点被定义为绝缘层区域正下方的界面的位置。当半导体区域的层厚被定义为TSOI，并且半导体层区域在垂直于层厚度的方向上的最大距离被定义为LUP值时，LUP / TSOI的比率至少为0.35。

82. 发明授权

US5384456A Image sensor in which illumination by electroluminescent device is synchronized with reading operation 失效
标题翻译：图像传感器，其中电致发光器件的照明与读取操作同步
公开(公告)号：US5384456A
公开(公告)日：1995-01-24
申请号：US934326
申请日：1992-08-25
申请人： Toshihiro Saika , Hidemasa Mizutani , Noriyuki Kaifu , Toshio Kameshima
发明人： Toshihiro Saika , Hidemasa Mizutani , Noriyuki Kaifu , Toshio Kameshima
IPC分类号： G09F13/22 , G02F1/13357 , H04N1/028 , H04N1/031 , H04N1/04 , H04N5/66 , H05B33/08 , H05B33/12 , H05B33/26 , H01J40/14
CPC分类号： H04N1/0316 , G02F1/133603 , H04N1/0313
摘要： An electroluminescent device comprising a first electrode, a second electrode and an electroluminescence emission zone, the electroluminescence emission zone being made of a first electroluminescence emission layer, a second electroluminescence emission layer, and a transparent electrode which is interposed between the first electroluminescence emission layer and the second electroluminescence emission layer. At least either the first electrode or the second electrode is a transparent electrode. The first electroluminescence emission layer and the second electro luminescence emission layer emit light by applying a driving voltage to the transparent electrode with both the first electrode and the second electrode connected to a power supply for a reference voltage. In an image sensor using such an electroluminescent device as a light source, the electric field produced by the driving signal of the electroluminescent device does not escape outward, presenting no interfering noise to the image sensor. The resulting light quantity is almost double that of devices with only a single electroluminescent layer, substantially enhancing a resulting image. As a result, a high S/N ratio image sensor may be fabricated.
摘要翻译：一种电致发光器件，包括第一电极，第二电极和电致发光发射区，所述电致发光发射区由第一电致发光发射层，第二电致发光发射层和透明电极构成，所述第一电致发光发射层，第二电致发光发射层和透明电极介于第一电致发光发射层和第二电致发光层。至少第一电极或第二电极是透明电极。第一电致发光发射层和第二电致发光发射层通过向透明电极施加驱动电压而发光，第一电极和第二电极都连接到用于参考电压的电源。在使用这种电致发光器件作为光源的图像传感器中，由电致发光器件的驱动信号产生的电场不向外逸出，对图像传感器不产生干扰噪声。所得到的光量几乎是仅具有单一电致发光层的装置的两倍，从而显着增强了所得到的图像。结果，可以制造高S / N比的图像传感器。

83. 发明授权

US5061978A Semiconductor photosensing device with light shield 失效
标题翻译：半导体光敏器件带防护罩
公开(公告)号：US5061978A
公开(公告)日：1991-10-29
申请号：US496092
申请日：1990-03-15
申请人： Hidemasa Mizutani , Shigeki Kondo
发明人： Hidemasa Mizutani , Shigeki Kondo
IPC分类号： H01L23/552 , H01L27/144 , H01L31/0216
CPC分类号： H01L23/552 , H01L27/1443 , H01L31/02164 , H01L2924/0002
摘要： A semiconductor device having a circuit portion formed on a substrate, a light shielding layer for shielding the circuit portion from light, stacked on the substrate with an insulation layer being interleaved therebetween, and means for shielding the circuit portion from obliquely impinging light.
摘要翻译：一种半导体器件，具有形成在基板上的电路部分，用于屏蔽电路部分的光的遮光层，堆叠在基板上，绝缘层彼此交错;以及用于屏蔽电路部分以防止倾斜的光照射的装置。

84. 发明授权

US5034782A Semiconductor commutator with grain boundary 失效
标题翻译：具有晶界的半导体换向器
公开(公告)号：US5034782A
公开(公告)日：1991-07-23
申请号：US422762
申请日：1989-10-17
申请人： Toru Koizumi , Hidemasa Mizutani
发明人： Toru Koizumi , Hidemasa Mizutani
IPC分类号： H01L21/20 , H01L29/04 , H01L29/06 , H01L29/32 , H01L29/861
CPC分类号： H01L29/861 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L29/04 , H01L29/0692 , H01L29/32 , Y10S438/921 , Y10S438/922
摘要： A semiconductor commutator is provided with first and second semiconductor regions joined at a junction formed therebetween. The first semiconductor region is of the first conductivity type at the second semiconductor region is of the opposite conductivity type. A grain boundary is provided near the junction and within a region, through which a carrier passes, between electrodes respectively provided on the semiconductor regions.

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