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    • 81. 发明授权
    • Multi-step release method for electrochemically fabricated structures
    • 电化学制造结构的多步释放方法
    • US08512578B2
    • 2013-08-20
    • US12892734
    • 2010-09-28
    • Adam L. CohenMichael S. LockardDale S. McPherson
    • Adam L. CohenMichael S. LockardDale S. McPherson
    • C25D5/02B81C1/00
    • C23C18/1689B33Y10/00B81C1/0019C23C18/1605C23C18/1651C25D1/003G03F7/00
    • Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.
    • 多层结构由至少一种结构材料(例如镍)进行电化学制造,其被构造成限定期望的结构并且可以附着到基底上,并且由至少一种围绕期望的材料的牺牲材料(例如铜) 结构体。 在结构形成之后,通过多级蚀刻操作去除牺牲材料。 在一些实施例中,待移除的牺牲材料可以位于基底上或附加部件内的通道等内。 多级蚀刻操作可以通过中间后处理活动来分离,它们可以通过清洁操作或阻隔材料去除操作等分开。 障碍物可以通过与结构材料或基底接触而固定就位,或者它们可以通过牺牲材料单独固定在适当位置,并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。
    • 89. 发明申请
    • EFAB Methods and Apparatus Including Spray Metal or Powder Coating Processes
    • 包括喷涂金属或粉末涂层工艺的EFAB方法和设备
    • US20090139869A1
    • 2009-06-04
    • US12324135
    • 2008-11-26
    • Michael S. LockardAdam L. CohenRoger W. Barton
    • Michael S. LockardAdam L. CohenRoger W. Barton
    • C25D5/02C25D5/10C25D5/48
    • C23C4/02C25D1/00C25D1/003
    • Various embodiments of the invention present techniques for forming structures via a combined electrochemical fabrication process and a thermal spraying process or powder deposition processes. In a first set of embodiments, selective deposition occurs via masking processes (e.g. a contact masking process or adhered mask process) and thermal spraying or powder deposition is used in blanket deposition processes to fill in voids left by selective deposition processes. In a second set of embodiments, after selective deposition of a first material, a second material is blanket deposited to fill in the voids, the two depositions are planarized to a common level and then a portion of the first or second materials is removed (e.g. by etching) and a third material is sprayed into the voids left by the etching operation. In both embodiments the resulting depositions are planarized to a desired layer thickness in preparation for adding additional layers.
    • 本发明的各种实施例提出了通过组合的电化学制造工艺和热喷涂工艺或粉末沉积工艺形成结构的技术。 在第一组实施例中,通过掩模工艺(例如接触掩模工艺或粘附的掩模工艺)进行选择性沉积,并且在覆盖沉积工艺中使用热喷涂或粉末沉积来填充通过选择性沉积工艺留下的空隙。 在第二组实施例中,在选择性沉积第一材料之后,第二材料被覆盖沉积以填充空隙,将两个沉积物平坦化到共同的水平,然后去除第一或第二材料的一部分(例如 通过蚀刻),并且通过蚀刻操作将第三材料喷射到留下的空隙中。 在两个实施方案中,将所得沉积物平坦化至所需的层厚度,以准备添加另外的层。