专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

WO2016007672A1 LAYERWISE HEATING, LINEWISE HEATING, PLASMA HEATING AND MULTIPLE FEED MATERIALS IN ADDITIVE MANUFACTURING 审中-公开
标题翻译：加热加热，木质加热，等离子体加热和多种进料添加剂生产
公开(公告)号：WO2016007672A1
公开(公告)日：2016-01-14
申请号：PCT/US2015/039609
申请日：2015-07-08
申请人： APPLIED MATERIALS, INC.
发明人： ROWLAND, Christopher A. , SUBRAMANI, Anantha K. , KRISHNAN, Kasiraman , RAMASWAMY, Kartik , BREZOCZKY, Thomas B. , SRINIVASAN, Swaminathan , SUN, Jennifer Y. , YAVELBERG, Simon , NEMANI, Srinivas D. , PATIBANDLA, Nag B. , NG, Hou T.
IPC分类号： B29C67/00 , B33Y30/00 , B33Y50/02
CPC分类号： B22F3/008 , B22F2003/1051 , B22F2003/1057 , B22F2998/10 , B23K10/006 , B23K10/027 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H05B3/0061
摘要： An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.
摘要翻译：一种添加剂制造系统，包括压板，进料输送系统，其被配置为将进料输送到由计算机辅助设计程序指定的压板上的位置;以及热源，该热源被配置为将所述进料的温度同时跨越所有层或跨越压板的宽度延伸的区域，并跨越压板的长度扫描该区域。热源可以是加热灯阵列或等离子体源。

82. 发明申请

WO2015094596A1 SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION 审中-公开
标题翻译：半导体系统组装和操作方法
公开(公告)号：WO2015094596A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/067135
申请日：2014-11-24
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , RAMASWAMY, Kartik , NEMANI, Srinivas , HOWARD, Bradley , VISHWANATH, Yogananda Sarode
IPC分类号： H01L21/67
CPC分类号： H01J37/32651 , H01J37/32091 , H01J37/32174 , H01J37/32357 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32577
摘要： An exemplary semiconductor processing system may include a high-frequency electrical source that has an outlet plug. The system may include a processing chamber having a top plate, and an inlet assembly coupled with the top plate. The inlet assembly may include an electrode defining an aperture at a first end and configured to receive the outlet plug. The aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The inlet assembly may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.
摘要翻译：示例性的半导体处理系统可以包括具有出口插头的高频电源。该系统可以包括具有顶板的处理室和与顶板联接的入口组件。入口组件可以包括在第一端限定孔并且被配置为接收出口塞的电极。孔可以在第一端被表征为第一直径，并且与第一端相对的孔的第二端的特征在于小于第一直径的第二直径。入口组件还可包括与顶板耦合的入口绝缘体并且构造成使顶板与电极电绝缘。

83. 发明申请

WO2015053992A1 MULTIZONE HOLLOW CATHODE DISCHARGE SYSTEM WITH COAXIAL AND AZIMUTHAL SYMMETRY AND WITH CONSISTENT CENTRAL TRIGGER 审中-公开
标题翻译：多用途中空阴离子放电系统，具有同轴和三次对称和一致的中心触发
公开(公告)号：WO2015053992A1
公开(公告)日：2015-04-16
申请号：PCT/US2014/058459
申请日：2014-09-30
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , RAMASWAMY, Kartik , SARODE VISHWANATH, Yogananda , MARCACCI, Alexander Charles
IPC分类号： H01L21/02
CPC分类号： H01J7/46 , H01J37/32082 , H01J37/3244 , H01J37/32596
摘要： A showerhead assembly includes a front plate having a front surface, a back surface and a plurality of first through holes connecting the front surface and the back surface, a back plate having a front surface, a back surface and a plurality of second through holes connecting the front surface and the back surface, and an adhesive layer joining the back surface of the front plate and the front surface of the back plate. The plurality of first through holes are aligned with the plurality of second through holes, and the front plate and the back plate are formed from dissimilar materials.
摘要翻译：一种喷头组件，包括前板，后表面和连接前表面和后表面的多个第一通孔的前板，具有前表面，后表面和后表面的多个第二通孔，前表面和后表面，以及将前板的后表面和后板的前表面接合的粘合剂层。多个第一通孔与多个第二通孔对准，前板和后板由不同的材料形成。

84. 发明申请

WO2014110237A1 INDUCTIVELY COUPLED PLASMA SOURCE 审中-公开
标题翻译：电感耦合等离子体源
公开(公告)号：WO2014110237A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010843
申请日：2014-01-09
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , RAMASWAMY, Kartik , YANG, Yang , LANE, Steven
IPC分类号： H05H1/24 , H05H1/46
CPC分类号： H01J37/321 , H01J37/3211
摘要： Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.
摘要翻译：本文提供了等离子体处理方法和装置的实施例。在一些实施例中，电感耦合等离子体装置可以包括底壁，其包括毂和通过电容器联接到毂的环，其中所述毂和环各自是导电的，并且其中所述毂具有与感应耦合等离子体装置的中心轴; 与所述底壁间隔开的顶壁，其中所述顶壁具有与所述中心轴线对准的中心开口，并且其中所述顶壁是导电的; 将所述环电连接到所述顶壁的侧壁; 以及将所述毂电连接到所述顶壁的管，所述管具有与所述中心轴对准的中心开口。

85. 发明申请

WO2009099519A1 PLASMA IMMERSION IMPLANTATION METHOD USING A PURE OR NEARLY PURE SILICON SEASONING LAYER ON THE CHAMBER INTERIOR SURFACES 审中-公开
标题翻译：在室内表面上使用纯度或近似纯硅酸盐层的等离子体浸入方法
公开(公告)号：WO2009099519A1
公开(公告)日：2009-08-13
申请号：PCT/US2009/000369
申请日：2009-01-19
申请人： APPLIED MATERIALS, INC.
发明人： LI, Shijian , RAMASWAMY, Kartik , HANAWA, Hiroji , CHO, Seon-Mee , GALLO, Biagio , CHOI, Dongwon , FOAD, Majeed A.
IPC分类号： H01L21/265
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：通过在晶片引入之前首先在内室表面上沉积部分导电的含硅调节层，在静电卡盘上采用非常高的RF偏置电压以获得必需的注入深度分布进行等离子体浸没离子注入。

86. 发明申请

WO2007019456A3 SEMICONDUCTOR SUBSTRATE PROCESS USING AN OPTICALLY WRITABLE CARBON-CONTAINING MASK 审中-公开
公开(公告)号：WO2007019456A3
公开(公告)日：2007-02-15
申请号：PCT/US2006/030747
申请日：2006-08-07
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik
IPC分类号： G03F1/00 , B23K26/06
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon- containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

87. 发明申请

WO2006124968A2 A PROCESS FOR LOW TEMPERATURE PLASMA DEPOSITION OF AN OPTICAL ABSORPTION LAYER AND HIGH SPEED OPTICAL ANNEALING 审中-公开
标题翻译：光吸收层的低温等离子体沉积和高速光学退火的工艺
公开(公告)号：WO2006124968A2
公开(公告)日：2006-11-23
申请号：PCT/US2006/019030
申请日：2006-05-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , HANAWA, Hiroji , GALLO, Biagio , COLLINS, Kenneth, S. , MA, Kai , PARIHAR, Vijay , JENNINGS, Dean , MAYUR, Abhilash , AL-BAYATI, Amir , NGUYEN, Andrew
IPC分类号： H05H1/24
CPC分类号： H05H1/46
摘要： A method of processing a workpiece includes introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and exposing the workpiece to optical radiation that is at least partially absorbed in the optical absorber layer.
摘要翻译：一种处理工件的方法包括将光吸收材料前体气体引入到包含工件的室中，在折入路径中产生RF振荡环形等离子体电流，其包括通过施加RF源功率覆盖工件的工艺区域，以便沉积在工件上的光吸收材料层，以及将工件暴露于至少部分地吸收在光吸收层中的光辐射。

88. 发明申请

WO2004042773A2 METHOD TO DRIVE SPATIALLY SEPARATE RESONANT STRUCTURE WITH SPATIALLY DISTINCT PLASMA SECONDARIES USING A SINGLE GENERATOR AND SWITCHING ELEMENTS 审中-公开
标题翻译：使用单发电机和开关元件驱动空间分离谐振结构与空间等离子体二次的方法
公开(公告)号：WO2004042773A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/032384
申请日：2003-10-10
申请人： APPLIED MATERIALS INC.
发明人： HANAWA, Hiroji , RAMASWAMY, Kartik , COLLINS, Kenneth, S. , NGUYEN, Andrew , MONROY, Gonzalo, Antonio
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
摘要翻译：一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域，所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径工艺区域，第一和第二等离子体源功率施加器电感耦合到第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机，连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

89. 发明申请

WO2023081052A1 SENSORLESS RF IMPEDANCE MATCHING NETWORK 审中-公开
公开(公告)号：WO2023081052A1
公开(公告)日：2023-05-11
申请号：PCT/US2022/047973
申请日：2022-10-27
申请人： APPLIED MATERIALS, INC.
发明人： GUO, Yue , RAMASWAMY, Kartik , YANG, Yang
IPC分类号： H01J37/32
摘要： Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.

90. 发明申请

WO2023043558A1 DISTORTION CURRENT MITIGATION IN A RADIO FREQUENCY PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2023043558A1
公开(公告)日：2023-03-23
申请号：PCT/US2022/040357
申请日：2022-08-15
申请人： APPLIED MATERIALS, INC.
发明人： GUO, Yue , YANG, Yang , RAMASWAMY, Kartik
IPC分类号： H01J37/32 , H03H7/01
摘要： Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to an electrode disposed within a processing chamber, wherein the voltage source is configured to generate a pulsed voltage signal at the input node; a signal generator having an output, wherein the RF signal generator is configured to deliver a first RF signal at a first RF frequency to the input node; a bandpass filter coupled between the output of the signal generator and the input node, wherein the bandpass filter is configured to attenuate second RF signals that are outside a range of frequencies including the first RF frequency of the first RF signal; and an impedance matching circuit coupled between the bandpass filter and the input node.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式