专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US08952443B2 Three dimensional semiconductor memory devices and methods of fabricating the same 有权
标题翻译：三维半导体存储器件及其制造方法
公开(公告)号：US08952443B2
公开(公告)日：2015-02-10
申请号：US13222173
申请日：2011-08-31
申请人： Sung-Il Chang , Young Woo Park , Jae Goo Lee
发明人： Sung-Il Chang , Young Woo Park , Jae Goo Lee
IPC分类号： H01L29/792 , H01L27/115 , H01L21/28
CPC分类号： H01L27/11582 , H01L21/28273 , H01L21/28282 , H01L21/31111 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/42324 , H01L29/4234
摘要： A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed between the semiconductor patterns and the electrode structure, and blocking insulating patterns interposed between the charge storing patterns and the electrode structure. Each of the blocking insulating patterns surrounds the semiconductor patterns, and the charge storing patterns are horizontally spaced from each other and configured in such a way as to each be disposed around a respective one of the semiconductor patterns. Also, each of the charge storing patterns includes a plurality of horizontal segments, each interposed between vertically adjacent ones of the electrodes.
摘要翻译：一种3D半导体器件包括：电极结构，其具有堆叠在基板上的电极，穿透电极结构的半导体图案，插入在半导体图案和电极结构之间的电荷存储图案，以及插入在电荷存储图案和电极结构之间的绝缘图案。每个隔离绝缘图案包围半导体图案，并且电荷存储图案彼此水平间隔并且以这样的方式配置，以使得每个隔离绝缘图案围绕相应的一个半导体图案设置。而且，每个电荷存储图案包括多个水平段，每个水平段插入垂直相邻的电极之间。

82. 发明申请

US20150008499A1 VERTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：垂直半导体器件
公开(公告)号：US20150008499A1
公开(公告)日：2015-01-08
申请号：US14267909
申请日：2014-05-02
申请人： Jae-goo Lee , Young-woo Park , Jin-taek Park
发明人： Jae-goo Lee , Young-woo Park , Jin-taek Park
IPC分类号： H01L29/78 , H01L29/792 , H01L29/788
CPC分类号： H01L27/11582 , H01L23/5226 , H01L27/11273 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L29/785 , H01L29/7889 , H01L29/7926
摘要： A vertical semiconductor device includes a channel structure extending from a substrate in a first direction perpendicular to an upper surface of the substrate, and a ground selection line, word lines, and a string selection line sequentially formed on a side surface of the channel structure in the first direction to be separated from one another. The channel structure includes a protruding region formed in a side wall portion of the channel structure between the ground selection line and the upper surface of the substrate, the protruding region protruding in a horizontal direction perpendicular to the first direction.
摘要翻译：垂直半导体器件包括从垂直于衬底的上表面的第一方向上从衬底延伸的沟道结构，以及顺序地形成在沟道结构的侧表面上的接地选择线，字线和串选择线第一个要相互分离的方向。通道结构包括形成在通道结构的侧壁部分之间的突出区域，其在接地选择线和衬底的上表面之间，突出区域在与第一方向垂直的水平方向上突出。

83. 发明授权

US08697524B2 Methods of manufacturing vertical semiconductor devices 有权
标题翻译：制造垂直半导体器件的方法
公开(公告)号：US08697524B2
公开(公告)日：2014-04-15
申请号：US13212485
申请日：2011-08-18
申请人： Byung-Kwan You , Kwang-Soo Seol , Young-Woo Park , Jin-Soo Lim
发明人： Byung-Kwan You , Kwang-Soo Seol , Young-Woo Park , Jin-Soo Lim
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L21/02104 , H01L27/11582 , H01L29/7926
摘要： Methods of manufacturing vertical semiconductor devices may include forming a mold structure including sacrificial layers and insulating interlayers with a first opening formed therethrough. The sacrificial layers and the insulating interlayers may be stacked repeatedly and alternately on a substrate. The first opening may expose the substrate. Blocking layers may be formed by oxidizing portions of the sacrificial layers exposed by the first opening. A first semiconductor layer pattern, a charge trapping layer pattern and a tunnel insulation layer pattern, respectively, may be formed on the sidewall of the first opening. A second semiconductor layer may be formed on the first polysilicon layer pattern and the bottom of the first opening. The sacrificial layers and the insulating interlayers may be partially removed to form a second opening. The sacrificial layers may be removed to form grooves between the insulating interlayers. Control gate electrodes may be formed in the grooves.
摘要翻译：制造垂直半导体器件的方法可以包括形成包括牺牲层和绝缘夹层的模具结构，其中形成有第一开口。牺牲层和绝缘夹层可以重复地和交替地层叠在基板上。第一开口可能暴露基板。可以通过氧化由第一开口暴露的牺牲层的部分来形成阻挡层。分别可以在第一开口的侧壁上形成第一半导体层图案，电荷俘获层图案和隧道绝缘层图案。可以在第一多晶硅层图案和第一开口的底部上形成第二半导体层。可以部分去除牺牲层和绝缘夹层以形成第二开口。可以去除牺牲层以在绝缘夹层之间形成凹槽。控制栅电极可以形成在凹槽中。

84. 发明申请

US20140084468A1 SEMICONDUCTOR DEVICE CONNECTED BY ANISOTROPIC CONDUCTIVE FILM 审中-公开
标题翻译：由各向异性导电膜连接的半导体器件
公开(公告)号：US20140084468A1
公开(公告)日：2014-03-27
申请号：US14030127
申请日：2013-09-18
申请人： Young Woo PARK , Joon Mo SEO , Hyun Min CHOI , Ji Yeon KIM , Kyoung Soo PARK , Arum YU , Jong Hyuk EUN
发明人： Young Woo PARK , Joon Mo SEO , Hyun Min CHOI , Ji Yeon KIM , Kyoung Soo PARK , Arum YU , Jong Hyuk EUN
IPC分类号： H01L23/00
CPC分类号： H01L24/29 , C09J2201/602 , H01L24/27 , H01L24/83 , H01L2224/2929 , H01L2224/293 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29388 , H01L2224/2939 , H01L2224/29439 , H01L2224/29444 , H01L2224/29455 , H01L2224/32225 , H01L2224/73204 , H01L2224/83203 , H01L2224/83862 , H01L2924/07802 , H01L2924/0665 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： A semiconductor device includes a first connecting member having a first electrode, a second connecting member having a second electrode, and an anisotropic conductive film between the first connecting member and the second connecting member, the anisotropic conductive film electrically connecting the first and second electrodes to each other. The anisotropic conductive film includes a polymer binder resin, an epoxy resin, conductive particles, and a curing agent. The epoxy resin includes a naphthalene ring-containing epoxy resin and a dicyclopentadiene ring-containing epoxy resin. The naphthalene ring-containing epoxy resin is included in an amount of 100 parts by weight to 500 parts by weight based on 100 parts by weight of the dicyclopentadiene ring-containing epoxy resin.
摘要翻译：一种半导体器件，包括具有第一电极的第一连接部件，具有第二电极的第二连接部件和在第一连接部件和第二连接部件之间的各向异性导电膜，将各第一电极和第二电极电连接的各向异性导电膜彼此。各向异性导电膜包括聚合物粘合剂树脂，环氧树脂，导电颗粒和固化剂。环氧树脂包括含萘环的环氧树脂和含双环戊二烯环的环氧树脂。相对于含有二环戊二烯环的环氧树脂100重量份，含萘环的环氧树脂的含量为100重量份〜500重量份。

85. 发明申请

US20130168847A1 ANISOTROPIC CONDUCTIVE FILM AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：各向异性导电膜和包括其的电子器件
公开(公告)号：US20130168847A1
公开(公告)日：2013-07-04
申请号：US13728215
申请日：2012-12-27
申请人： Young Woo PARK , Nam Ju KIM , Kyoung Soo PARK , Joon Mo SEO , Kyung ll SUL , Dong Seon UH , Arum YU , Hyun Min CHOI
发明人： Young Woo PARK , Nam Ju KIM , Kyoung Soo PARK , Joon Mo SEO , Kyung ll SUL , Dong Seon UH , Arum YU , Hyun Min CHOI
IPC分类号： H01L23/538
CPC分类号： H01L23/538 , C08G59/226 , C08G59/245 , C08K2201/001 , C08K2201/011 , C09J9/02 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L2224/16225 , H01L2224/2929 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29364 , H01L2224/29366 , H01L2224/29371 , H01L2224/29386 , H01L2224/2939 , H01L2224/29393 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/32225 , H01L2224/73204 , H01L2924/07802 , H01L2924/07811 , H01L2924/15788 , H01L2924/00 , C08L63/00 , C08K3/36 , C08K3/10
摘要： An electronic device includes an anisotropic conductive film as a connection material, the anisotropic conductive film being formed from an anisotropic conductive film-forming composition. The anisotropic conductive film-forming composition includes a polycyclic aromatic ring-containing epoxy resin, a fluorene epoxy resin, nano silica and conductive particles.
摘要翻译：电子器件包括各向异性导电膜作为连接材料，各向异性导电膜由各向异性导电膜形成组合物形成。各向异性导电膜形成组合物包括多环芳族环的环氧树脂，芴环氧树脂，纳米二氧化硅和导电颗粒。

86. 发明授权

US08462444B2 Compact zoom lens 有权
标题翻译：紧凑型变焦镜头
公开(公告)号：US08462444B2
公开(公告)日：2013-06-11
申请号：US13086468
申请日：2011-04-14
申请人： Min Heu , Young-woo Park
发明人： Min Heu , Young-woo Park
IPC分类号： G02B15/14
CPC分类号： G02B15/177
摘要： A zoom lens including, in a sequence from an object side to an image plane side: a first lens group having a negative refractive power; a second lens group having a positive refractive power; a third lens group having a negative refractive power; and a fourth lens group having a positive refractive power. During zooming from a wide angle position to a telephoto position, an interval between the first lens group and the second lens group decreases, an interval between the second lens group and the third lens group increases, and an interval between the third lens group and the fourth lens group decreases. When the location of an object changes from ∞ to a close location, the first lens group is moved toward the object to perform focusing.
摘要翻译：一种变焦透镜，包括从物体侧到像面侧的顺序：具有负屈光力的第一透镜组; 具有正屈光力的第二透镜组; 具有负屈光力的第三透镜组; 以及具有正屈光力的第四透镜组。在从广角位置到望远位置的变焦期间，第一透镜组和第二透镜组之间的间隔减小，第二透镜组和第三透镜组之间的间隔增加，并且第三透镜组与第三透镜组之间的间隔第四透镜组减少。当物体的位置从∞变为关闭位置时，第一透镜组朝向物体移动以进行聚焦。

87. 发明申请

US20120308574A1 HUMAN MONOCLONAL ANTIBODY THAT SPECIFICALLY BINDS TO VCAM-1 AND A COMPOSITION FOR TREATING AN INFLAMMATORY DISEASE OR A CANCER COMPRISING THE SAME 失效
标题翻译：对VCAM-1特异性结合的人类单克隆抗体和用于治疗炎症性疾病的组合物或包含其的癌症
公开(公告)号：US20120308574A1
公开(公告)日：2012-12-06
申请号：US13262212
申请日：2010-03-31
申请人： Jung Tae Lee , Kyung Duk Moon , Ji Yong Yoon , Byung Je Sung , Dong Heon Lee , Il Sun Lee , Dong Eun Lee , Su Yeon Ryu , Young Woo Park , So Young Choi , Ji Hyun Park , Myeoung Hee Jang
发明人： Jung Tae Lee , Kyung Duk Moon , Ji Yong Yoon , Byung Je Sung , Dong Heon Lee , Il Sun Lee , Dong Eun Lee , Su Yeon Ryu , Young Woo Park , So Young Choi , Ji Hyun Park , Myeoung Hee Jang
IPC分类号： A61K39/395 , G01N33/574 , C07K16/18 , A61P9/10 , A61P35/00 , A61P11/06 , A61P1/00 , G01N33/566 , A61P29/00
CPC分类号： C07K16/2836 , A61K2039/505 , C07K14/70542 , C07K2317/21 , C07K2317/33 , C07K2317/56 , C07K2317/565 , C07K2317/567 , C07K2317/622 , C07K2317/76 , C07K2317/92 , C07K2317/94 , C07K2319/30
摘要： The present invention relates to a human monoclonal antibody that specifically binds to VCAM-1, and a therapeutic composition for the treatment of inflammatory disease or cancer comprising the same. The human monoclonal antibody according to the present invention shows a strong affinity to VCAM-1 expressed on human or mouse endothelial cell, effectively inhibits leukocyte adhesion to activated endothelial cells expressing VCAM-1, and shows a low immunogenicity, thereby being used for the treatment of cancer or inflammatory disease such as asthma, rhinitis, arthritis, multiple sclerosis, bowel disease, arteriosclerosis, myocardial infarction and transplant rejection.
摘要翻译：本发明涉及特异性结合VCAM-1的人单克隆抗体以及用于治疗炎症性疾病或癌症的治疗组合物。根据本发明的人单克隆抗体对在人或小鼠内皮细胞上表达的VCAM-1显示出强亲和力，有效抑制白细胞与表达VCAM-1的活化内皮细胞粘附，并且显示出低的免疫原性，从而用于治疗的癌症或炎性疾病如哮喘，鼻炎，关节炎，多发性硬化，肠病，动脉硬化，心肌梗死和移植排斥。

88. 发明申请

US20120218816A1 Non-Volatile Memory Devices 有权
标题翻译：非易失性存储器件
公开(公告)号：US20120218816A1
公开(公告)日：2012-08-30
申请号：US13463060
申请日：2012-05-03
申请人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
发明人： Jong-Sun Sel , Jung-Dal Choi , Young-Woo Park , Jin-Taek Park
IPC分类号： G11C11/34
CPC分类号： G11C16/0483 , G11C16/3427
摘要： A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a ground select line crossing the active region, and a string select line crossing the active region and spaced apart from the ground select line. A plurality of memory cell word lines may cross the active region between the ground select line and the string select line with about a same first spacing provided between adjacent ones of the plurality of word lines and between a last of the plurality of memory cell word lines and the string select line. A second spacing may be provided between the ground select line and a first of the plurality of memory cell word lines.
摘要翻译：非易失性存储器件可以包括半导体衬底，其包括其表面处的有源区，与有源区交叉的接地选择线，以及与有源区交叉并与地选线相隔的串选择线。多个存储单元字线可以与地线选择线和弦选择线之间的有源区域相交，并且与多个字线中的相邻字线之间以及多个存储单元字线中的最后一个之间提供大致相同的第一间隔和字符串选择行。可以在接地选择线和多个存储单元字线中的第一个之间提供第二间隔。

89. 发明申请

US20120210823A1 METHOD OF HARDENING AN INTERFACE OF CARBON MATERIAL USING NANO SILICON CARBIDE COATING 有权
标题翻译：使用纳米碳化硅涂层硬化碳材料界面的方法
公开(公告)号：US20120210823A1
公开(公告)日：2012-08-23
申请号：US13270656
申请日：2011-10-11
申请人： Young Hee LEE , Kang Pyo So , Eun Sun Kim , Young Woo Park
发明人： Young Hee LEE , Kang Pyo So , Eun Sun Kim , Young Woo Park
IPC分类号： C22C1/02 , H05B6/02 , B02C23/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/956 , C22C1/1036 , C22C1/1084 , C22C26/00
摘要： Disclosed is a method for hardening an interface of a carbon material by using nano silicon carbide coating. A carbon material-aluminum composite prepared by the disclosed method is light in weight, and has a high dynamic strength, and thus can be applied to currently used cars and aluminum wheels. Furthermore, the composite can be utilized as a material for aircrafts, spacecraft, ships, etc. requiring a high strength.
摘要翻译：公开了一种通过使用纳米碳化硅涂层来硬化碳材料的界面的方法。通过所公开的方法制备的碳材料 - 铝复合材料重量轻，并且具有高动态强度，因此可以应用于目前使用的汽车和铝轮毂。此外，复合材料可以用作需要高强度的飞机，航天器，船舶等的材料。

90. 发明申请

US20120122297A1 METHOD OF FABRICATING A NONVOLATILE MEMORY DEVICE 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20120122297A1
公开(公告)日：2012-05-17
申请号：US13198157
申请日：2011-08-04
申请人： Jong-Hoon NA , Young-Woo Park , Dong-Hwa Kwak , Tae-Yong Kim , Jee-Hoon Han , Jang-Hyun You , Dong-Sik Lee , Su-Jin Park
发明人： Jong-Hoon NA , Young-Woo Park , Dong-Hwa Kwak , Tae-Yong Kim , Jee-Hoon Han , Jang-Hyun You , Dong-Sik Lee , Su-Jin Park
IPC分类号： H01L21/762
CPC分类号： H01L27/0207 , H01L21/28273 , H01L27/11 , H01L27/11519 , H01L27/11524
摘要： A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.
摘要翻译：一种制造非易失性存储器件的方法包括提供具有由多个沟槽限定的有源区的衬底，在具有多个沟槽的衬底上形成第一隔离层，在第一隔离层上形成牺牲层以填充沟槽，所述牺牲层包括填充所述沟槽的下部的第一区域和除所述下部以外的第二区域填充部分，去除所述牺牲层的所述第二区域，在所述第一隔离层上形成第二隔离层和在所述第一隔离层的所述第一区域牺牲层，通过去除牺牲层的第一区域在沟槽中形成气隙，以及在保持气隙的同时去除第一隔离层的一部分和第二隔离层的一部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式