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    • 82. 发明申请
    • BALLOON CATHETER WITH MANUALLY OPERATED VALVE AND ASPIRATOR
    • 具有手动操作阀和吸气管的气缸导管
    • WO2008045308A2
    • 2008-04-17
    • PCT/US2007/021373
    • 2007-10-05
    • KUMAR, Anil, B.
    • KUMAR, Anil, B.
    • A61M27/00
    • A61M25/10185A61M25/0017A61M25/0028A61M25/007A61M25/04A61M25/10183A61M2025/0037
    • A Foley type catheter of the type including an elongated flexible tube and an inflation lumen, the distal end of the tube being provided with a membrane that is inflated into a balloon by fluid passage though the lumen, wherein to retain the distal end interiorly of a bladder, and a drainage eye, wherein to enable the catheter to drain urine therefrom. The proximal end of the tube is provided with a fluid control valve and a fluid pump, each hand operated as desired. The pump is in the form of a squeeze bulb and/or aspirator and adapted to deform to supply and/or withdraw fluid into and from the lumen and selectively inflate/deflate the membrane. In one embodiment, the pump is in the shape of a pleated bellows that is axially collapsed and end walls forced together and into a suction cup like retaining engagement, and a coil spring acts to restore the shape.
    • 一种类型的Foley型导管,包括细长的柔性管和充气腔,所述管的远端设置有通过流体通过管腔而膨胀成气囊的膜,其中将远端保持在内部 膀胱和引流眼,其中使得导管能够从​​其排出尿液。 管的近端设置有流体控制阀和流体泵,每个手都按需要操作。 泵是挤压灯泡和/或抽吸器的形式,并且适于变形以供流体和/或从管腔抽出流体并且选择性地使膜膨胀/放气。 在一个实施例中,泵是褶皱波纹管的形状,其被轴向收缩,并且端壁被压在一起并进入如同保持接合的吸杯中,并且螺旋弹簧用于恢复该形状。
    • 87. 发明申请
    • MOSFET AND MANUFACTURING METHOD THEREOF
    • MOSFET及其制造方法
    • US20090261413A1
    • 2009-10-22
    • US12413786
    • 2009-03-30
    • Kumar ANIL
    • Kumar ANIL
    • H01L27/12H01L21/762
    • H01L29/78696H01L21/76264H01L29/66772H01L29/78609H01L29/78621
    • The present invention provides a MOSFET capable of improving the basic performance of a transistor such as saturation current characteristics, input follow-up and an offleak current at high levels, and a manufacturing method thereof. The MOSFET comprises a semiconductor layer, a gate electrode formed over the semiconductor layer through a gate oxide film interposed therebetween, a pair of drain/source regions each provided at a position where the regions interpose a channel region lying below the gate oxide film therebetween inside the semiconductor layer and each having a conductivity type different from a conductivity type of the semiconductor layer, a pair of extension regions which are respectively provided adjacent to the drain/source regions at the position and which are identical in conductivity type to the drain/source regions and lower in impurity concentration than the drain/source regions, and an interposition layer having a conductivity type different from the conductivity type of the source region, the interposition layer being provided adjacent only to the source region and the extension region adjacent thereto inside the semiconductor layer.
    • 本发明提供了能够提高诸如饱和电流特性,输入跟随和高电平的截止电流的晶体管的基本性能的MOSFET及其制造方法。 MOSFET包括半导体层,通过其间插入栅极氧化膜形成在半导体层上的栅极电极,一对漏极/源极区域,每个漏极/源极区域设置在区域将位于栅极氧化膜之下的沟道区域介于其间的位置处 半导体层,并且每个具有不同于半导体层的导电类型的导电类型;一对延伸区域,分别设置在该位置处与漏极/源极区域相邻并且与导电类型相同的漏极/源极 区域和杂质浓度低于漏极/源极区域,以及介电层,其具有不同于源极区域的导电类型的导电类型,插入层仅设置在邻近源极区域和与其邻近的延伸区域内部 半导体层。
    • 90. 发明授权
    • MOSFET and manufacturing method thereof
    • MOSFET及其制造方法
    • US08101998B2
    • 2012-01-24
    • US12413786
    • 2009-03-30
    • Kumar Anil
    • Kumar Anil
    • H01L27/12H01L21/762
    • H01L29/78696H01L21/76264H01L29/66772H01L29/78609H01L29/78621
    • The present invention provides a MOSFET capable of improving the basic performance of a transistor such as saturation current characteristics, input follow-up and an offleak current at high levels, and a manufacturing method thereof. The MOSFET comprises a semiconductor layer, a gate electrode formed over the semiconductor layer through a gate oxide film interposed therebetween, a pair of drain/source regions each provided at a position where the regions interpose a channel region lying below the gate oxide film therebetween inside the semiconductor layer and each having a conductivity type different from a conductivity type of the semiconductor layer, a pair of extension regions which are respectively provided adjacent to the drain/source regions at the position and which are identical in conductivity type to the drain/source regions and lower in impurity concentration than the drain/source regions, and an interposition layer having a conductivity type different from the conductivity type of the source region, the interposition layer being provided adjacent only to the source region and the extension region adjacent thereto inside the semiconductor layer.
    • 本发明提供了能够提高诸如饱和电流特性,输入跟随和高电平的截止电流的晶体管的基本性能的MOSFET及其制造方法。 MOSFET包括半导体层,通过其间插入栅极氧化膜形成在半导体层上的栅极电极,一对漏极/源极区域,每个漏极/源极区域设置在区域将位于栅极氧化膜之下的沟道区域介于其间的位置处 半导体层,并且每个具有不同于半导体层的导电类型的导电类型;一对延伸区域,分别设置在该位置处与漏极/源极区域相邻并且与导电类型相同的漏极/源极 区域和杂质浓度低于漏极/源极区域,以及介电层,其具有不同于源极区域的导电类型的导电类型,插入层仅设置在邻近源极区域和与其邻近的延伸区域内部 半导体层。