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    • 81. 发明授权
    • Light emitting panel and light emitting apparatus having the same
    • 发光面板及具有该发光面板的发光装置
    • US07091669B2
    • 2006-08-15
    • US11113126
    • 2005-04-25
    • Beohm-Rock ChoiJoon-Hoo ChoiJin-Koo Chung
    • Beohm-Rock ChoiJoon-Hoo ChoiJin-Koo Chung
    • G09G3/10
    • G09G3/3233G09G3/3208G09G2300/0426G09G2300/0842G09G2320/0209G09G2320/0223G09G2330/02H01L27/3244
    • An organic light-emitting panel includes a data line, a scan line, a voltage applying line, a switching device, an organic light emitting device and a driving device. The voltage applying line satisfies a condition expressed as Δ ⁢ ⁢ V ⁡ ( max ) n
    • 有机发光面板包括数据线,扫描线,电压施加线,开关器件,有机发光器件和驱动器件。 电压施加线满足表示为 max n << / MO> A MROW> Delta Vdata GS n [ Volt ] 其中DeltaVmax是最大电压降,'n'是电连接到电压施加线的像素数,'A' '是约1到约4范围内的校正系数,DeltaV数据是一个volta 灰度级之间的差异,GS是灰度级数。 根据有机发光面板,电压施加线的电压降降低。
        • 82. 发明申请
        • Thin film transistor array panel for x-ray detector
        • 用于x射线探测器的薄膜晶体管阵列面板
        • US20060124932A1
        • 2006-06-15
        • US10538779
        • 2003-12-11
        • In-Su JooJoon-Hoo Choi
        • In-Su JooJoon-Hoo Choi
        • H01L29/04
        • H01L27/1214H01L27/14658H01L27/14659H01L27/14692
        • A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
        • 用于X射线检测器的薄膜晶体管阵列面板包括具有光电二极管的虚拟像素和用于检测漏电流的TFT。 光电二极管包括彼此面对的第一和第二电极(178,195)和设置在第一电极和第二电极之间的光电导层(800)。 TFT包括半导体层(150),栅电极(123),连接到数据线的源电极(173),连接到光电二极管的漏电极(175)。 虚拟像素还包括用于阻挡入射在光电二极管上的光的遮光层(196)。 或者,半导体层在源电极和漏电极之间断开。
        • 87. 发明申请
        • Liquid crystal display device having touch screen function and method of fabricating the same
        • 具有触摸屏功能的液晶显示装置及其制造方法
        • US20050094038A1
        • 2005-05-05
        • US10865996
        • 2004-06-11
        • Joon-hoo ChoiIn-soo Joo
        • Joon-hoo ChoiIn-soo Joo
        • G02F1/133G02F1/1333G02F1/1335G02F1/1362G02F1/1368G06F3/041G09F9/30
        • G06F3/0412G02F1/133371G02F1/13338G02F1/13624
        • The present invention relates to an LCD device having a touch screen function. The LCD device of the present invention includes a plurality of gate lines, a plurality of data lines intersecting the gate lines, and a plurality of signal lines that are insulated from and juxtaposed with the data lines. First to third switching elements are formed in each of a plurality of pixel regions in the form of a matrix, which are surrounded by the gate lines and the data lines. Here, a gate electrode of the first switching element is connected to a gate line Gn, a source electrode thereof is connected to the data line, and a drain electrode thereof is connected to a pixel electrode. Further, liquid crystal capacitance and storage capacitance are formed between the pixel electrode and a common electrode. At this time, the liquid crystal capacitance is changed due to variation in the liquid crystal cell gap. The second and third switching elements are designed to read variation in the liquid crystal capacitance. A source electrode of the second switching element is connected to the pixel electrode, a drain electrode thereof is connected to the signal line, and a gate electrode thereof is connected to a previous gate line Gn-1. Furthermore, a source electrode of the third switching element is connected to the data line, a drain electrode thereof is connected to the pixel electrode, and a gate electrode thereof is connected to a second previous gate line Gn-2. Each signal line is connected to each signal amplifier.
        • 本发明涉及具有触摸屏功能的LCD装置。 本发明的LCD装置包括多条栅极线,与栅极线交叉的多条数据线,以及与数据线绝缘并且并列的多条信号线。 第一至第三开关元件形成为由栅极线和数据线围绕的矩阵形式的多个像素区域中的每一个。 这里,第一开关元件的栅电极连接到栅极线Gn,其源电极连接到数据线,其漏电极连接到像素电极。 此外,在像素电极和公共电极之间形成液晶电容和存储电容。 此时,由于液晶元件间隙的变化,液晶电容变化。 第二和第三开关元件被设计为读取液晶电容的变化。 第二开关元件的源电极连接到像素电极,其漏电极连接到信号线,其栅电极连接到先前的栅极线Gn-1。 此外,第三开关元件的源电极连接到数据线,其漏电极连接到像素电极,并且其栅电极连接到第二先前栅极线Gn-2。 每个信号线连接到每个信号放大器。
        • 90. 发明授权
        • Thin film transistor array substrate, organic light-emitting display device including the same and method of manufacturing the thin film transistor array substrate
        • 薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造方法
        • US08759836B2
        • 2014-06-24
        • US13589636
        • 2012-08-20
        • Chun-Gi YouJoon-Hoo Choi
        • Chun-Gi YouJoon-Hoo Choi
        • H01L29/04H01L29/12H01L29/15
        • H01L27/1288H01L27/1255H01L27/3262H01L29/4908
        • A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening.
        • 薄膜晶体管(TFT)阵列基板包括:TFT,包括有源层,栅电极,源电极和漏电极,有源层和栅电极之间的第一绝缘层,以及第二绝缘层和第三绝缘层, 所述栅电极和所述源极漏极,所述第一绝缘层和在所述TFT中延伸的所述第二绝缘层,包括透明导电氧化物材料的像素电极,所述像素电极在所述第一绝缘层和所述第二绝缘层上,并且为 通过所述第三绝缘层中的开口连接到所述源电极或漏电极;电容器,包括与所述栅电极相同的层上的第一电极和与所述像素电极相同的层上的第二电极; 以及覆盖所述源电极和漏极的第四绝缘层,并且经由开口暴露所述像素电极。