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81. 发明授权

US07959818B2 Method for forming a fine pattern of a semiconductor device 有权
标题翻译：用于形成半导体器件的精细图案的方法
公开(公告)号：US07959818B2
公开(公告)日：2011-06-14
申请号：US11772016
申请日：2007-06-29
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/32139 , G03F7/405 , H01L21/0273 , H01L21/0338
摘要： A method for forming a fine pattern of a semiconductor device includes forming a photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the photoresist pattern. The photoresist pattern is then removed to form a fine pattern comprising the cross-linking layer. The underlying layer is etched using the fine pattern as an etching mask. As a result, the underlying layer has a smaller size than a minimum pitch.
摘要翻译：用于形成半导体器件的精细图案的方法包括在包括下层的半导体衬底上形成光致抗蚀剂图案。在光致抗蚀剂图案的侧壁上形成交联层。然后去除光致抗蚀剂图案以形成包含交联层的精细图案。使用精细图案作为蚀刻掩模蚀刻下层。结果，底层具有比最小间距更小的尺寸。

82. 发明授权

US07803519B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07803519B2
公开(公告)日：2010-09-28
申请号：US12420692
申请日：2009-04-08
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0395 , G03F7/0035 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A method for manufacturing a semiconductor device using a photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow a subsequent ion-implanting process to be stably performed.
摘要翻译：通过在下层图案的整个表面上均匀地形成光致抗蚀剂膜，使用包含氟成分的光致抗蚀剂聚合物，含有光致抗蚀剂聚合物的光致抗蚀剂组合物和有机溶剂以降低表面张力的半导体器件的制造方法，以允许随后的离子注入工艺被稳定地进行。

83. 发明授权

US07737227B2 Composition for an organic hard mask and method for forming a pattern on a semiconductor device using the same 失效
标题翻译：用于有机硬掩模的组合物和在使用其的半导体器件上形成图案的方法
公开(公告)号：US07737227B2
公开(公告)日：2010-06-15
申请号：US11296758
申请日：2005-12-07
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： C08G69/32
CPC分类号： H01L21/0274 , G03F7/0387 , H01L21/312
摘要： A composition for the organic hard mask includes a polyamic acid compound, and a method for forming a pattern is used in a manufacturing process of semiconductor devices by coating the composition for organic hard mask film on an underlying layer, and depositing a second hard mask film with a silicon nitride SiON film thereon to form a double hard mask film having an excellent etching selectivity, thereby obtaining a uniform pattern.
摘要翻译：有机硬掩模用组合物包括聚酰胺酸化合物，在半导体器件的制造工序中，通过将下述有机硬掩模膜用组合物涂布在基底层上，将第二硬掩模膜在其上形成氮化硅SiON膜以形成具有优异蚀刻选择性的双重硬掩模膜，从而获得均匀的图案。

84. 发明申请

US20090191709A1 Method for Manufacturing a Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090191709A1
公开(公告)日：2009-07-30
申请号：US12420698
申请日：2009-04-08
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： H01L21/467
CPC分类号： G03F7/0045 , C08F232/08 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
摘要翻译：一种用于浸没式光刻的聚合物，其包含由式1表示的重复单元和含有该重复单元的光致抗蚀剂组合物。由本发明的光致抗蚀剂组合物形成的光致抗蚀剂膜具有很高的耐溶解性，在用于浸没式光刻的水溶液中的光致酸产生剂，从而防止曝光透镜的污染和曝光引起的光致抗蚀剂图案的变形。

85. 发明授权

US07563753B2 Cleaning solution for removing photoresist 有权
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US07563753B2
公开(公告)日：2009-07-21
申请号：US10317578
申请日：2002-12-12
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
IPC分类号： C11D7/50
CPC分类号： C11D3/3738 , C11D1/44 , C11D1/72 , C11D1/721 , C11D1/722 , C11D3/373 , C11D3/3742 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/422
摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
摘要翻译：公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物，式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物。其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

86. 发明授权

US07534549B2 Photoresist polymer, and photoresist composition 有权
标题翻译：光致抗蚀剂聚合物和光致抗蚀剂组合物
公开(公告)号：US07534549B2
公开(公告)日：2009-05-19
申请号：US11312106
申请日：2005-12-20
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： G03C1/73 , G03F7/039
CPC分类号： G03F7/0395 , G03F7/0035 , G03F7/0045 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, and a method for manufacturing a semiconductor device using the same by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow a subsequent ion-implanting process to be performed stably.
摘要翻译：包含氟组分的光致抗蚀剂聚合物，含有光致抗蚀剂聚合物的光致抗蚀剂组合物和降低表面张力的有机溶剂，以及通过在下层图案的整个表面上均匀地形成光致抗蚀剂膜来制造使用该光致抗蚀剂聚合物的半导体器件的方法以允许稳定地进行随后的离子注入工艺。

87. 发明授权

US07534548B2 Polymer for immersion lithography and photoresist composition 有权
标题翻译：浸渍光刻用聚合物和光致抗蚀剂组合物
公开(公告)号：US07534548B2
公开(公告)日：2009-05-19
申请号：US11304052
申请日：2005-12-15
申请人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
发明人： Jae Chang Jung , Cheol Kyu Bok , Chang Moon Lim , Seung Chan Moon
IPC分类号： G03F7/004 , C08F26/06 , C08F32/08
CPC分类号： G03F7/0045 , C08F232/08 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure.
摘要翻译：一种用于浸没式光刻的聚合物，其包含由式1表示的重复单元和含有该重复单元的光致抗蚀剂组合物。由本发明的光致抗蚀剂组合物形成的光致抗蚀剂膜具有很高的耐溶解性，在用于浸没式光刻的水溶液中的光致酸产生剂，从而防止曝光透镜的污染和曝光引起的光致抗蚀剂图案的变形。

88. 发明申请

US20080166661A1 Method for forming a fine pattern in a semiconductor 审中-公开
标题翻译：在半导体中形成精细图案的方法
公开(公告)号：US20080166661A1
公开(公告)日：2008-07-10
申请号：US11804674
申请日：2007-05-18
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： H01L21/02 , G03C1/04 , G03C5/00
CPC分类号： H01L21/0274 , G03F7/0397 , H01L21/0338
摘要： A method for forming a fine pattern in a semiconductor device includes the steps of: coating a first photoresist composition over a semiconductor substrate including an underlying layer, thereby forming a first photoresist film; exposing and developing the first photoresist film, thereby forming a first photoresist pattern; forming a second photoresist film that does not react with the first photoresist pattern over the resulting structure; and exposing and developing the second photoresist film, thereby forming a second photoresist pattern; wherein the first and second photoresist patterns each comprise a plurality of elements, and individual elements of the second photoresist pattern are located between adjacent individual elements of the first photoresist pattern.
摘要翻译：在半导体器件中形成微细图案的方法包括以下步骤：在包括下层的半导体衬底上涂覆第一光致抗蚀剂组合物，由此形成第一光致抗蚀剂膜; 曝光和显影第一光致抗蚀剂膜，从而形成第一光致抗蚀剂图案; 在所得结构上形成不与第一光致抗蚀剂图案反应的第二光致抗蚀剂膜; 曝光和显影第二光致抗蚀剂膜，从而形成第二光致抗蚀剂图案; 其中所述第一和第二光致抗蚀剂图案各自包括多个元件，并且所述第二光致抗蚀剂图案的各个元件位于所述第一光致抗蚀剂图案的相邻单独元件之间。

89. 发明申请

US20080131814A1 METHOD FOR FORMING A FINE PATTERN OF A SEMICONDUCTOR DEVICE 失效
标题翻译：形成半导体器件精细图案的方法
公开(公告)号：US20080131814A1
公开(公告)日：2008-06-05
申请号：US11765675
申请日：2007-06-20
申请人： Jae Chang JUNG
发明人： Jae Chang JUNG
IPC分类号： G03C5/00
CPC分类号： G03F7/2041 , G03F7/091 , G03F7/11
摘要： A method for forming a pattern of a semiconductor device using an immersion lithography process includes pretreating a top portion of the photoresist film with an alkane solvent or alcohol in the immersion lithography process to form a uniform over-coating film.
摘要翻译：使用浸渍光刻工艺形成半导体器件的图案的方法包括在浸渍光刻工艺中用烷烃溶剂或醇预处理光致抗蚀剂膜的顶部以形成均匀的覆盖膜。

90. 发明申请

US20070265406A1 LIGHT ABSORBENT AGENT POLYMER USEFUL FOR ORGANIC ANTI-REFLECTIVE COATING, AND PREPARATION METHOD FOR THE SAME 审中-公开
标题翻译：用于有机抗反射涂料的光吸收剂聚合物及其制备方法
公开(公告)号：US20070265406A1
公开(公告)日：2007-11-15
申请号：US11770497
申请日：2007-06-28
申请人： Jae-chang JUNG , Keun KONG , Jin-soo KIM
发明人： Jae-chang JUNG , Keun KONG , Jin-soo KIM
IPC分类号： B05D5/06
CPC分类号： G02B1/111 , C09D135/00 , G03F7/091 , Y10T428/12528
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止底部薄膜层或基底的扩散光反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而提高光致抗蚀剂图案的均匀性，其制造半导体装置的制造方法中使用193nm的ArF，形成用于光刻的光刻胶的超微细图案的方法及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

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