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    • 84. 发明授权
    • Distributed constant type multiple-line circuit
    • 分布式常数型多线电路
    • US5568101A
    • 1996-10-22
    • US454711
    • 1995-05-31
    • Yoshihiro KonishiYoshio OkumaYoshihiko BabaHideki Fujiwara
    • Yoshihiro KonishiYoshio OkumaYoshihiko BabaHideki Fujiwara
    • H01P1/205H01P1/213H01P7/04H01P5/12
    • H01P1/2136
    • A distributed constant type multiple-line circuit is described which comprises a dielectric block (60) having shield conductors (62,64) on its rear surface and all the peripheral side surfaces, a central conductor (1) extending in the block in the front-to-rear thickness direction at the central portion thereof, a first plurality of conductors (2-5) positioned around and parallel to the central conductor and inductively coupled therewith, and a second plurality of conductors (2'-5') positioned nearby and parallel to the first conductors and inductively coupled therewith, respectively. The length of the central conductor is equal to one quarter of the wavelength of the central frequency (f.sub.1) in a frequency band, and the rear end thereof is isolated with the shield conductor on the rear surface of the block. Each of the lengths of the first conductors is equal to one quarter of the wavelength of a predetermined frequency (f.sub.2 -f.sub.5) in the frequency band, and the rear ends thereof are shorted with the shield conductor on the rear surface of the block. Each of the lengths of the second conductors is equal to that of the corresponding one of said first conductors, and the rear ends thereof are isolated with the shield conductor on the rear surface of the block. An input signal (S.sub.IN) iS input to the front end of the central conductor, and signal components of frequencies (f.sub.2 -f.sub.5) are respectively output through the first conductors from the front ends of the second conductor.
    • 描述了分布常数型多线电路,其包括在其后表面上具有屏蔽导体(62,64)的介质块(60,64)和所有外围侧表面,在前面的块中延伸的中心导体(1) 在其中心部分的后 - 后厚度方向,位于中心导体周围并平行于其并与其电感耦合的第一多个导体(2-5)和位于附近的第二多个导体(2'-5') 并且分别与第一导体平行并与其感应耦合。 中心导体的长度等于频带中心频率(f1)的波长的四分之一,并且其后端与屏蔽导体隔离在块的后表面上。 第一导体的每个长度等于频带中预定频率(f2-f5)的波长的四分之一,并且其后端与块的后表面上的屏蔽导体短路。 第二导体的每个长度等于相应的一个所述第一导体的长度,并且其后端与屏蔽导体隔离在块的后表面上。 输入到中心导体的前端的输入信号(SIN)iS和频率的信号分量(f2-f5)分别从第二导体的前端通过第一导体输出。
    • 85. 发明授权
    • Apparatus and method of growing single crystal
    • 生长单晶的装置和方法
    • US5363796A
    • 1994-11-15
    • US837202
    • 1992-02-18
    • Sumio KobayashiShunji MiyaharaToshiyuki FujiwaraTakayuki KuboHideki FujiwaraShuichi Inami
    • Sumio KobayashiShunji MiyaharaToshiyuki FujiwaraTakayuki KuboHideki FujiwaraShuichi Inami
    • C30B15/00C30B15/14C30B15/10
    • C30B29/06C30B15/14Y10T117/1068
    • An apparatus for growing a single crystal having a crucible, two heaters arranged at the outside of the crucible and along the vertical direction, a heat shield placed at the outside of the heaters, a radiation shield for shielding the single crystal from the radiation heat, and an upper heat shield for preventing the upward heat, transfer of the heaters. In the apparatus, a melted layer and solid layer of raw material are formed in the upper and lower portions of the crucible, respectively. While melting the solid layer, the single crystal is pulled up. The lower portion of the heat shield is thinner than the upper portion. The ratio of the height to the diameter of the crucible is 0.85 or more. The melting amount of the solid layer is controlled in the pulling process according to the non-segregation condition in the variable-thickness melted layer method. The oxygen concentration of the pulled single crystal is controlled in the pulling process by adjusting the rotation speed and rotation direction of the crucible.
    • 一种用于生长具有坩埚的单晶的装置,设置在坩埚外部并沿着垂直方向的两个加热器,设置在加热器外部的隔热罩,用于将单晶屏蔽在放射线上的辐射屏蔽, 以及用于防止加热器的向上热传递的上部隔热罩。 在该装置中,在坩埚的上部和下部分别形成熔融层和原料固体层。 在熔化固体层时,单晶被拉起。 隔热罩的下部比上部薄。 坩埚的高度与直径之比为0.85以上。 根据可变厚度熔融层法中的非偏析条件,在拉伸过程中控制固体层的熔融量。 通过调节坩埚的旋转速度和旋转方向,在牵引过程中控制拉出的单晶的氧浓度。