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    • 81. 发明专利
    • Check of data quality and auxiliary data with respect to raman sensor
    • 检查数据质量和辅助数据与拉曼传感器
    • JP2011149914A
    • 2011-08-04
    • JP2010013526
    • 2010-01-25
    • Itt Manufacturing Enterprises Incアイティーティー マニュファクチャリング エンタープライジーズ, インコーポレイテッド
    • CHYBA THOMAS HKELLY BRIAN
    • G01N21/65
    • PROBLEM TO BE SOLVED: To provide a Raman spectrum measuring apparatus, and a system and method for performing automated periodic evaluation of collected spectrum data. SOLUTION: In a method of operating a Raman sensor, there are executed the steps of executing a plurality of auxiliary data checks for monitoring an operating state of a system component of the Raman sensor; acquiring Raman spectrum data; executing the plurality of data quality checks related to the acquired data; determining whether the acquired data are further processed, based on the result of the data quality checks and storing the acquired data for further processing, if the acquired data is further processed; and executing the plurality of data quality checks related to the step of acquiring the Raman spectrum data and its data are repeated continuously for a predetermined time; then a step of executing the plurality of auxiliary data checks is re-executed. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供拉曼光谱测量装置,以及用于对所收集的光谱数据进行自动周期性评估的系统和方法。 解决方案:在操作拉曼传感器的方法中,执行执行多个辅助数据检查以监视拉曼传感器的系统部件的操作状态的步骤; 获取拉曼光谱数据; 执行与所获取的数据相关的多个数据质量检查; 如果进一步处理所获取的数据,则基于数据质量检查的结果确定所获取的数据是否被进一步处理,并且存储所获取的数据用于进一步处理; 并且执行与获取拉曼光谱数据的步骤相关的多个数据质量检查及其数据在预定时间内连续重复; 则执行多个辅助数据检查的步骤被重新执行。 版权所有(C)2011,JPO&INPIT
    • 86. 发明专利
    • Device and method for aligning image sensor
    • 用于对准图像传感器的装置和方法
    • JP2010103110A
    • 2010-05-06
    • JP2009241287
    • 2009-10-20
    • Itt Manufacturing Enterprises Incアイティーティー マニュファクチャリング エンタープライジーズ, インコーポレイテッド
    • GARRIS WILLIAM ERIC
    • H01J31/50H01L27/14H04N5/225H04N5/232
    • H01J31/26
    • PROBLEM TO BE SOLVED: To provide an imaging device capable of exactly aligning an image sensor and an aligning method in the imaging device. SOLUTION: The imaging device for aligning an image sensor and a method for aligning the image sensor in the imaging device are disclosed. The imaging device includes a housing, an image sensor assembly containing a header, and an image sensor mounted to the header. The header of the image sensor assembly is connected with the housing. The method includes a means for aligning the image sensor to the header, and a means for aligning the header to the housing of the imaging device. The separated distance between the image sensor alignment means and the header alignment means is predetermined so that the distance between the image sensor and the housing of the imaging device is predetermined. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供能够在成像装置中精确地对准图像传感器和对准方法的成像装置。 公开了用于对准图像传感器的成像装置和用于对准成像装置中的图像传感器的方法。 成像装置包括壳体,包含头部的图像传感器组件和安装到头部的图像传感器。 图像传感器组件的头部与壳体连接。 该方法包括用于将图像传感器与头部对准的装置,以及用于将头部对准成像装置的壳体的装置。 图像传感器对准装置和标题对准装置之间的分离距离是预定的,使得图像传感器和成像装置的壳体之间的距离是预定的。 版权所有(C)2010,JPO&INPIT
    • 90. 发明专利
    • Radiation hardened logic circuits
    • 辐射硬化逻辑电路
    • JP2009118478A
    • 2009-05-28
    • JP2008277940
    • 2008-10-29
    • Itt Manufacturing Enterprises Incアイティーティー マニュファクチャリング エンタープライジーズ, インコーポレイテッド
    • WYATT MICHAEL A
    • H03K19/003H01L21/822H01L21/8249H01L27/04H01L27/06H03K19/08H03K19/20
    • H03K19/0033H03K19/09418
    • PROBLEM TO BE SOLVED: To provide a logic circuit having resistance to damage caused by electric charges generated in the circuit after exposed to ionization radiation for a long period of time. SOLUTION: A radiation hardened inverter includes first and second electrical paths between an input terminal and an output terminal. A first PFET is disposed in the first electrical path, and a bipolar junction transistor (BJT) is disposed in the second electrical path. The first PFET is configured to convert a low level signal at the input terminal to a high level signal at the output terminal, and the BJT is configured to convert a high level signal at the input terminal to a low level signal at the output terminal. The second PFET is configured to provide a path for bleeding excess current away from the BJT. The radiation hardened inverter also includes a current limiting PFET disposed in the second electrical path. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种在长时间暴露于电离辐射之后具有在电路中产生的电荷导致的损坏的电阻的逻辑电路。 解决方案:辐射硬化逆变器包括在输入端和输出端之间的第一和第二电路。 第一PFET设置在第一电路中,并且双极结型晶体管(BJT)设置在第二电路中。 第一PFET被配置为将输入端子处的低电平信号转换为输出端子处的高电平信号,并且BJT被配置为将输入端子处的高电平信号转换为输出端子处的低电平信号。 第二PFET被配置为提供用于将过剩电流从BJT流出的路径。 放射硬化逆变器还包括设置在第二电路中的限流PFET。 版权所有(C)2009,JPO&INPIT