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71. 发明授权

US06225199B1 Semiconductor device having triple-well 有权
标题翻译：具有三重阱的半导体器件
公开(公告)号：US06225199B1
公开(公告)日：2001-05-01
申请号：US09348381
申请日：1999-07-07
申请人： Jae-Jong Han , Doo-Hyun Hwang , Byung-Kee Kim , Beung-Keun Lee
发明人： Jae-Jong Han , Doo-Hyun Hwang , Byung-Kee Kim , Beung-Keun Lee
IPC分类号： H01L21265
CPC分类号： H01L21/761 , H01L27/10894
摘要： The triple-well according to the present invention reduces a photo process forming a well isolation region which is used in a method for forming a prior well. That is, two times of photo processes are reduced to be one time, thereby simplifying a method for forming a triple-well of the DRAM device and reducing time and expenditure.
摘要翻译：根据本发明的三重阱减少了形成井分离区域的光刻工艺，其用于形成先前井的方法。也就是说，将两次照相处理减少为一次，从而简化了用于形成DRAM器件的三阱的方法并减少了时间和费用。

72. 发明授权

US06225188B1 Self aligned method for differential oxidation rate at shallow trench isolation edge 有权
标题翻译：浅沟槽隔离边缘微分氧化率自对准方法
公开(公告)号：US06225188B1
公开(公告)日：2001-05-01
申请号：US09524447
申请日：2000-03-14
申请人： Derick J. Wristers , H. Jim Fulford , Mark I. Gardner
发明人： Derick J. Wristers , H. Jim Fulford , Mark I. Gardner
IPC分类号： H01L21265
CPC分类号： H01L21/76237
摘要： A semiconductor process in which at least one isolation structure is formed in a semiconductor substrate is provided. An oxygen bearing species is introduced into portions of the semiconductor substrate proximal to the isolation structure, preferably through the use of an ion implantation into a tilted or inclined substrate. A gate dielectric layer is then formed on an upper surface of the semiconductor substrate. The presence of the oxygen bearing species in the proximal portions of the semiconductor substrate increases the oxidation rate of the portions relative proximal to the oxidation rate of portions of the substrate that are distal to the isolation structures. In this manner, a first thickness of the gate dielectric over the proximal portions of the semiconductor substrate is greater than a second thickness of the gate oxide layer over remaining portions of the semiconductor substrate. The increased oxide thickness adjacent to the discontinuities of the isolation trench reduces the electric field across the oxide.
摘要翻译：提供其中在半导体衬底中形成至少一个隔离结构的半导体工艺。氧离子种类被引入半导体衬底的靠近隔离结构的部分，优选通过使用离子注入到倾斜或倾斜的衬底中。然后在半导体衬底的上表面上形成栅介质层。在半导体衬底的近端部分存在含氧物质增加了部分相对于离开隔离结构远端的部分氧化速率的氧化速率。以这种方式，在半导体衬底的近端部分上的栅极电介质的第一厚度大于半导体衬底的剩余部分上的栅极氧化物层的第二厚度。与隔离沟槽的不连续性相邻的增加的氧化物厚度减小了跨过氧化物的电场。

73. 发明授权

US06214707B1 Method of forming a doped region in a semiconductor substrate 有权
标题翻译：在半导体衬底中形成掺杂区的方法
公开(公告)号：US06214707B1
公开(公告)日：2001-04-10
申请号：US09420964
申请日：1999-10-20
申请人： Randhir P. S. Thakur , Howard E. Rhodes
发明人： Randhir P. S. Thakur , Howard E. Rhodes
IPC分类号： H01L21265
CPC分类号： H01L21/2233 , H01L21/2236 , H01L21/26513 , H01L21/26546 , H01L21/3245 , H01L29/66575
摘要： A method for implanting shallow regions in a semiconductor substrate comprises heating the backside of the substrate with a lamp or other heating method, and implanting the frontside of the substrate using plasma doping. In a further embodiment, the frontside of the substrate is also heated, using rapid thermal processing during implantation. Implantation damage is simultaneously annealed during implantation, so that a subsequent anneal, if needed at all, is done using rapid thermal annealing.
摘要翻译：用于在半导体衬底中植入浅区域的方法包括用灯或其他加热方法加热衬底的背面，以及使用等离子体掺杂注入衬底的前侧。在另一实施例中，衬底的前侧也在植入期间使用快速热处理加热。植入损伤在植入过程中同时进行退火，因此，如果需要，可以使用快速热退火进行随后的退火。

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