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71. 发明申请

WO2008019073A2 SYSTEM AND METHOD FOR CREATING ELECTRIC ISOLATION BETWEEN LAYERS COMPRISING SOLAR CELLS 审中-公开
标题翻译：用于在包含太阳能电池的层之间创建电隔离的系统和方法
公开(公告)号：WO2008019073A2
公开(公告)日：2008-02-14
申请号：PCT/US2007/017357
申请日：2007-08-03
申请人： SOLYNDRA, INC. , BULLER, Benyamin , MILSHTEIN, Erel
发明人： BULLER, Benyamin , MILSHTEIN, Erel
IPC分类号： H01L31/0224 , H01L27/142 , H01L31/20 , B08B7/00 , B23K26/36
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0463 , H01L31/206 , Y02E10/50 , Y02P70/521 , Y10S438/94
摘要： Methods for forming a patterned layer from common layer in a photovoltaic application are provided. The patterned layer is configured to form one or more portions of one or more solar cells on a rigid substrate. A first pass is made with a first laser beam over an area on the common layer. A second pass is made with a second laser beam over approximately the same area on the common layer. The first pass provides a first level of electrical isolation between a first portion and a second portion of the common layer. The second pass provides a second level of electrical isolation between the first portion and the second portion of the common layer. The second level of electrical isolation is greater than the first level of electrical isolation.
摘要翻译：提供了在光伏应用中从共同层形成图案化层的方法。图案化层被配置为在刚性基板上形成一个或多个太阳能电池的一个或多个部分。在公共层上的区域上用第一激光束进行第一遍。在公共层上的大致相同的区域上用第二激光束进行第二遍。第一遍提供公共层的第一部分和第二部分之间的第一级电隔离。第二遍提供在公共层的第一部分和第二部分之间的第二级电隔离。电气隔离的第二级大于第一级电隔离。

72. 发明申请

WO2004037712A3 METHOD FOR PRODUCING A PACKAGED INTEGRATED CIRCUIT WITH A MICROACTIVITY 审中-公开
标题翻译：用于生产具有微观活性的包装集成电路的方法
公开(公告)号：WO2004037712A3
公开(公告)日：2004-08-26
申请号：PCT/CA0301602
申请日：2003-10-27
申请人： MICROBRIDGE TECHNOLOGIES INC , LANDSBERGER LESLIE M , GRUDIN OLEG
发明人： LANDSBERGER LESLIE M , GRUDIN OLEG
IPC分类号： B81B7/00 , B81C1/00 , H01L23/34 , B81B3/00
CPC分类号： B81C1/00333 , B81C1/00896 , B81C2203/0136 , H01L23/345 , H01L24/48 , H01L2224/05599 , H01L2224/16 , H01L2224/45099 , H01L2224/48247 , H01L2224/85399 , H01L2924/00014 , H01L2924/01019 , H01L2924/01021 , H01L2924/10253 , H01L2924/14 , H01L2924/16195 , H01L2924/181 , Y10S438/94 , Y10S438/963 , Y10S438/977 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity, and having a heating element on the micro-structure capable of heating itself and its immediate surroundings. A layer of protective material is then deposited on said micro-structure such that at least a top surface of the micro-structure and an opening of the micro-cavity is covered, wherein the protective material is in a solid state at room temperature and can protect the micro-structure during silicon wafer dicing procedures and subsequent packaging. The integrated circuit is packaged and an electric current is passed through the heating element such that a portion of the protective material is removed and an unobstructed volume is provided above and below the micro-structure.
摘要翻译：描述了一种用于制造封装集成电路的方法。该方法包括构建具有悬浮在微腔上方的微结构的集成电路的第一步骤，并且在微结构上具有能够加热自身及其周围环境的加热元件。然后将一层保护材料沉积在所述微结构上，使得微结构的至少顶表面和微腔的开口被覆盖，其中保护材料在室温下处于固态，并且可以在硅晶片切割程序和随后的封装过程中保护微结构。集成电路被封装并且电流通过加热元件，使得保护材料的一部分被去除，并且在微结构的上方和下方设置无阻塞的体积。

73. 发明申请

WO03012369A3 CURVED WAVEGUIDE RING LASER 审中-公开
标题翻译：弯曲波导激光
公开(公告)号：WO03012369A3
公开(公告)日：2003-10-16
申请号：PCT/US0216591
申请日：2002-06-25
申请人： BINOPTICS CORP
发明人： BEHFAR ALEX
IPC分类号： H01S5/10 , H01S5/22 , H01S3/083 , H01S5/00
CPC分类号： H01S5/1071 , Y10S438/94
摘要： A ring-type laser (40) including a traveling wave cavity which incorporates at least first and second straight cavity sections (42, 44) and at least one curved cavity sections (48). Corresponding first ends of the straight cavity sections are interconnected at a first light-emitting facet (62), and second ends of the straight sections are interconnected by the curved section (48). Additional curved and straight sections can be linked to provide various ring configurations.
摘要翻译：一种环形激光器（40），包括至少包括第一和第二直腔部分（42,44）和至少一个弯曲空腔部分（48）的行波腔。直腔区域的对应的第一端在第一发光面（62）处互连，并且直段的第二端通过弯曲部分（48）相互连接。可以连接附加的弯曲和直线部分以提供各种环形结构。

74. 发明申请

WO2003012369A2 CURVED WAVEGUIDE RING LASER 审中-公开
标题翻译：弯曲波导激光
公开(公告)号：WO2003012369A2
公开(公告)日：2003-02-13
申请号：PCT/US2002/016591
申请日：2002-06-25
申请人： BINOPTICS CORPORATION
发明人： BEHFAR, Alex
IPC分类号： G01C
CPC分类号： H01S5/1071 , Y10S438/94
摘要： A ring-type laser including a traveling wave cavity which incorporates at least first and second straight cavity sections and at least one curved cavity sections are interconnected at a first light-emitting facet, and second ends of the straight sections are interconnected by the curved waveguide. Additional curved and straight sections can be linked to provide various ring configurations.
摘要翻译：包括至少包括第一和第二直腔部分以及至少一个弯曲腔部分的行波腔的环形激光器在第一发光小面处互连，并且直线部分的第二端通过弯曲波导。可以连接附加的弯曲和直线部分以提供各种环形结构。

75. 发明申请

WO2003001588A2 VERFAHREN ZUR HERSTELLUNG EINES ELEKTRONISCHEN BAUELEMENTS, INSBESONDERE EINES SPEICHERCHIPS 审中-公开
标题翻译：方法生产电子部件，尤其是内存芯片
公开(公告)号：WO2003001588A2
公开(公告)日：2003-01-03
申请号：PCT/EP2002/005254
申请日：2002-05-13
申请人： INFINEON TECHNOLOGIES AG , HEDLER, Harry , IRSIGLER, Roland , VASQUEZ, Barbara
发明人： HEDLER, Harry , IRSIGLER, Roland , VASQUEZ, Barbara
IPC分类号： H01L21/768
CPC分类号： H01L22/22 , H01L23/525 , H01L23/5258 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines Speicherchips, mit einer laserindizierten Korrektur zum Abgleich einer integrierten Schaltung über ein oder mehrere in eine die Schaltung zumindest teilweise abdeckende Schicht eingebrachte Laser-Vias, wobei das Bauelement eine Umverdrahtung der Kontaktpads aufweist, umfassend folgende Schritte: Verschließen jedes Laser-Vias mittels einer separaten lokal aufzubringenden Deckschicht; Erzeugen einer zwischen den lokalen Deckschichten verlaufenden Umverdrahtung; Entfernen der lokalen Deckschichten; Durchführung der laserinduzierten Korrektur über die geöffneten Laser-Vias.
摘要翻译：一种用于制造电子元件，特别是一个存储器芯片具有用于经由一个或多个校准的集成电路的激光索引校正的方法，所述电路至少部分地覆盖在层引入激光器的通孔，其特征在于，所述部件具有接触垫的再布线，包括以下步骤：封闭每个激光通孔是指局部施加一个单独的覆盖层的; 生成局部涂层重新布线之间延伸的直线; 局部表面层的去除; 进行打开激光通孔的激光诱导的校正。

76. 发明申请

WO2002076666A2 A LASER MACHINING SYSTEM AND METHOD 审中-公开
标题翻译：激光加工系统和方法
公开(公告)号：WO2002076666A2
公开(公告)日：2002-10-03
申请号：PCT/IE2002/000035
申请日：2002-03-22
申请人： XSIL TECHNOLOGY LIMITED , BOYLE, Adrian , MEIGHAN, Oonagh , WALSH, Gillian , MAH, Kia, Woon
发明人： BOYLE, Adrian , MEIGHAN, Oonagh , WALSH, Gillian , MAH, Kia, Woon
IPC分类号： B23K26/00
CPC分类号： B23K26/073 , B23K26/0622 , B23K26/12 , B23K26/123 , B23K26/125 , B23K26/127 , B23K26/142 , B23K26/1462 , B23K26/16 , B23K26/384 , B23K26/389 , B23K26/40 , B23K2201/40 , B23K2203/12 , B23K2203/172 , H05K3/0026 , Y10S438/94
摘要： A substrate (16) is machined to form, for example, a via. The substrate is in a chamber (15) within which the gaseous environment is controlled. The machining laser beam (13) is delivered with control of parameters such as pulsing parameters to achieve desired effects. The gaseous environment may be controlled to control integral development of an insulating lining for a via, thereby avoiding the need for downstream etching and oxide grwth steps. Also, machining may be performed in multiple passes in order to minimise thermal damage and to achieve other sedired effects such as a particular via geometry.
摘要翻译：加工基板（16）以形成例如通孔。衬底在其中控制气体环境的腔室（15）中。加工激光束（13）通过诸如脉冲参数的参数的控制来传送以实现期望的效果。可以控制气体环境以控制用于通孔的绝缘衬里的整体显影，从而避免对下游蚀刻和氧化物栅极步骤的需要。此外，可以在多次通过中进行加工，以便最小化热损伤并实现其它的镇静效果，例如特定的通孔几何形状。

77. 发明申请

WO01017001A1 METHOD AND APPARATUS FOR LASER ABLATION OF A TARGET MATERIAL 审中-公开
标题翻译：目标材料激光消除的方法和装置
公开(公告)号：WO01017001A1
公开(公告)日：2001-03-08
申请号：PCT/US2000/023362
申请日：2000-08-25
IPC分类号： B23K26/06 , B23K26/073 , B23K26/38 , H01L21/00 , H01L21/301 , H01L21/48 , B23K26/00 , B23K26/08 , B23K26/10 , B23K26/14 , B23K26/16 , B23K26/18 , H01L21/44 , H01L21/46 , H01L21/50 , H01L21/78
CPC分类号： H01L21/67092 , B23K26/0624 , B23K26/0736 , B23K26/38 , B23K2201/40 , H01L21/4803 , Y10S438/94
摘要： A method and apparatus for laser cutting a target material is disclosed. The method includes the steps of generating laser pulses and applying the laser pulses to the target material so that the laser pulses cut through the material. The laser pulses have an approximately ellipse shaped spot, having a temporal pulse width shorter than about 100 nanoseconds, and have an energy density from about 2 to 20 times the ablation threshold energy of the target material. The laser pulses are applied to the material such that the major axis of the ellipse shaped spot moves parallel to the cutting direction. The spot has a leading and trailing edge on the major axis, and the energy density of each laser pulse increases from zero to a maximum along the leading edge and decreases to zero along the trailing edge. The apparatus is a laser system (1) for cutting a target material that includes: a seed laser system (2) for producing a first laser beam; a laser amplifier (4) for amplifying the first laser pulse to produce an amplified laser beam; a harmonic generation system (6) for converting the amplified pulse laser beam into a second pulse laser beam having a shorter wavelength; a focussing system (7) for focussing the second pulse laser beam to an approximately ellipse shaped third pulse laser beam; and a motion control system (8) for moving a target material contacted by the third pulse laser beam.
摘要翻译：公开了一种激光切割目标材料的方法和装置。该方法包括产生激光脉冲并将激光脉冲施加到目标材料的步骤，使得激光脉冲切穿材料。激光脉冲具有近似椭圆形的点，具有短于约100纳秒的时间脉冲宽度，并且具有来自靶材料的消融阈值能量的约2至20倍的能量密度。激光脉冲施加到材料上，使得椭圆形点的长轴平行于切割方向移动。该点在主轴上具有前缘和后缘，并且每个激光脉冲的能量密度沿着前沿从零增加到最大值，并且沿着后沿逐渐减小到零。该装置是用于切割目标材料的激光系统（1），其包括：用于产生第一激光束的种子激光系统（2）激光放大器（4），用于放大第一激光脉冲以产生放大的激光束; 用于将放大的脉冲激光束转换成具有较短波长的第二脉冲激光束的谐波发生系统（6）; 用于将第二脉冲激光束聚焦到大致椭圆形的第三脉冲激光束的聚焦系统（7）; 以及用于移动与第三脉冲激光束接触的目标材料的运动控制系统（8）。

78. 发明申请

WO1994006182A1 SYSTEM AND METHOD FOR SELECTIVELY LASER PROCESSING A TARGET STRUCTURE OF MATERIALS OF A MULTIMATERIAL, MULTILAYER DEVICE 审中-公开
标题翻译：用于选择性激光加工多元材料，多层设备的材料的目标结构的系统和方法
公开(公告)号：WO1994006182A1
公开(公告)日：1994-03-17
申请号：PCT/US1993008484
申请日：1993-09-10
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SUN, Yunlong , HUTCHENS, Craig, Dean
发明人： ELECTRO SCIENTIFIC INDUSTRIES, INC.
IPC分类号： H01S03/09
CPC分类号： B23K26/06 , B23K26/0643 , B23K26/351 , B23K26/361 , B23K26/40 , B23K2101/34 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/50 , H01L21/76894 , H01S3/025 , H01S3/0401 , H01S3/09415 , H01S3/11 , H01S3/1611 , H01S3/1653 , Y10S438/94
摘要： A laser system and processing method exploits the absorption contrast between the materials from which a link (12) or film and an underlying substrate (22) are made to effectively remove the link or film from the substrate. Laser output in a wavelength range of 1.2 to 2.0 (my)m (30) optimizes the absorption contrast between many high conductivity materials (e.g., metals) or resistive films and silicon substrates and permits the use of laser output in a wider range of energy or power levels, pulse widths, without risking damage to the silicon substrates or adjacent circuit structures. Existing link or film processing laser systems can be readily modified to operate in the 1.2 to 3.0 (my)m range. The laser system and processing method also exploits a wavelength range in which functional or active dedicated devices, having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively trimmed without inducing malfunctions or function shifts in the processed devices.
摘要翻译：激光系统和处理方法利用材料之间的吸收对比度，其中链接（12）或膜和下面的基底（22）被制成以有效地从基底去除连接或膜。波长范围为1.2至2.0（my）m（30）的激光输出优化了许多高导电性材料（例如金属）或电阻膜和硅衬底之间的吸收对比度，并允许在更宽的能量范围内使用激光输出或功率电平，脉冲宽度，而不会对硅衬底或相邻电路结构造成危害。现有的连接或电影处理激光系统可以容易地修改为在1.2到3.0（我）的范围内操作。激光系统和处理方法还利用了波长范围，其中可以有效地修整具有集成到其电路中的光敏或光电子部分的功能或有源专用器件，而不会引起处理器件中的故障或功能移位。

79. 发明申请

WO2013106164A1 METHODS AND SYSTEMS FOR LASER PROCESSING OF COATED SUBSTRATES 审中-公开
标题翻译：涂层基体激光加工方法与系统
公开(公告)号：WO2013106164A1
公开(公告)日：2013-07-18
申请号：PCT/US2012/069825
申请日：2012-12-14
申请人： IMRA AMERICA, INC.
发明人： ARAI, Alan, Y. , CHO, Gyu, Cheon , XU, Jingzhou
IPC分类号： H01S3/30
CPC分类号： H01L21/67092 , B23K26/0006 , B23K26/0057 , B23K26/40 , B23K2203/16 , B23K2203/172 , H01L21/2686 , H01L21/78 , H01L33/0095 , Y10S438/94
摘要： Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.
摘要翻译：公开了激光加工材料的方法和系统的实例。用于单片化包括涂覆的基底的晶片的方法和系统可以利用激光输出具有对于晶片衬底是透明的但对涂层不透明的波长的光。使用技术来管理激光束的注量和聚焦条件，涂层和基材可分别通过烧蚀和内部修饰进行处理。内部修改可导致管芯分离。

80. 发明申请

WO2008130493A3 CONNECTING MICROSIZED DEVICES USING ABLATIVE FILMS 审中-公开
标题翻译：使用压缩薄膜连接微型器件
公开(公告)号：WO2008130493A3
公开(公告)日：2009-03-19
申请号：PCT/US2008004406
申请日：2008-04-04
申请人： EASTMAN KODAK CO , ALI MOHAMMAD ZAKI , STOLT PETER AXEL , HAWKINS GILBERT ALLEN , STEPHANY THOMAS MICHAEL
发明人： ALI MOHAMMAD ZAKI , STOLT PETER AXEL , HAWKINS GILBERT ALLEN , STEPHANY THOMAS MICHAEL
IPC分类号： H01L21/60 , B81B7/00 , B81C1/00 , G01N27/28 , H01L21/48 , H01L23/48 , H05K3/10
CPC分类号： H01L23/48 , B81B2207/098 , B81C1/00301 , H01L21/4864 , H01L24/24 , H01L24/32 , H01L24/82 , H01L24/83 , H01L2224/1131 , H01L2224/24226 , H01L2224/244 , H01L2224/24992 , H01L2224/27013 , H01L2224/73217 , H01L2224/82039 , H01L2224/82102 , H01L2224/83051 , H01L2224/838 , H01L2224/92144 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/0781 , H01L2924/12041 , H01L2924/1306 , H05K3/0032 , H05K3/107 , H05K3/125 , H05K3/1258 , H05K3/321 , H05K2201/09472 , H05K2201/10674 , H05K2203/013 , H05K2203/0568 , H05K2203/1469 , Y10S438/94 , H01L2924/00 , H01L2224/0401
摘要： A method of providing connectivity to a microsized device, the method includes the steps of providing an ablative base material having at least a top surface; providing a die having a first and second surface and having bonding pads at least upon the first surface; placing the die with the at least first surface of the die contacting the at least first surface of the ablative base material; and ablating a channel in the ablative material proximate to the die. Amaterial providing fluidic or electrical or photonic or magnetic or mechanical connection to the die is the placed in the channel.
摘要翻译：提供与微型化装置的连通性的方法，该方法包括以下步骤：提供具有至少顶表面的烧蚀性基材; 提供具有第一和第二表面的模具，并且至少在所述第一表面上具有焊盘; 使所述模具与所述模具的所述至少第一表面接触所述可烧蚀基材的所述至少第一表面; 并且在靠近模具的烧蚀材料中烧蚀通道。提供流体或电或光或磁或机械连接到模具的材料放置在通道中。

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