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71. 发明公开

EP2844871A1 DISPOSITIF DE CONVERSION D'ENERGIE THERMIQUE EN ENERGIE MECANIQUE A EFFICACITE AMELIOREE 审中-公开
标题翻译： VORRICHTUNG ZUR UMWANDLUNG VONWÄRMEENERGIEIN MECHANISCHE ENERGIE MIT VERBESSERTER EFFIZIENZ
公开(公告)号：EP2844871A1
公开(公告)日：2015-03-11
申请号：EP13719830.5
申请日：2013-04-29
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： SAVELLI, Guillaume , CORONEL, Philippe
IPC分类号： F03G7/06 , H02N2/18
CPC分类号： H02N2/18 , F03G7/06 , H02K7/1892 , H02N1/08 , H02N10/00
摘要： The invention relates to a device for converting heat energy into mechanical energy, comprising first (4) and second (6) bistable areas passing from a first stable state to a second stable state by means of a thermal effect or mechanical action, said areas (4, 6) being mechanically coupled such that the passage from one state to the other in one area (4, 6) by means of the thermal effect causes the other area (4, 6) to pass from one state to the other. Each area (4, 6) has a blistering temperature and a deblistering temperature, the wrinkling temperature being greater than the deblistering temperature. Said device is to be place in contact with an environment (SC) having at least a given temperature such that the temperature of the environment (SC) is lower than the blistering temperature of the first area (4) and higher than the blistering temperature (Tc6) of the second area (6).
摘要翻译：本发明涉及一种用于将热能转换成机械能的装置，其包括通过热效应或机械作用从第一稳定状态转移到第二稳定状态的第一（4）和第二（6）双稳态区域，所述区域（4,6）机械联接，使得通过热效应从一个区域（4,6）中的一个状态到另一个状态的通道使另一个区域（6,4）从一个状态传递到另一个状态，每个区域（4,6）具有起泡温度和不起泡温度，起泡温度高于不起泡温度。所述装置旨在与具有至少一个给定温度的环境（SC）接触，使得环境温度（SC）低于第一区域（4）的起泡温度，并且高于第二区域（6）的起泡温度（Tc6）。

72. 发明授权

EP1075452B1 TEMPERATURE COMPENSATED MICROELECTROMECHANICAL STRUCTURES 有权
标题翻译：温度补偿微机电结构
公开(公告)号：EP1075452B1
公开(公告)日：2009-03-11
申请号：EP00915816.3
申请日：2000-02-21
申请人： Memscap
发明人： HILL, Edward , WOOD, Robert, L. , MAHADEVAN, Ramaswamy
IPC分类号： B81B3/00 , H02N10/00
CPC分类号： H02N10/00 , B81B3/0024 , B81B3/0081 , H01H1/0036 , H01H2001/0042
摘要： MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator (105) adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element (205), such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator. In an alternative embodiment wherein the active microactuator is suspended within a frame above the substrate, the MEMS structure holds at least a portion of the active microactuator in a fixed position relative to the substrate over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator.

73. 发明授权

EP1721866B1 MEMS device having a trilayered beam and related methods 有权
标题翻译：与三层波束和相关方法的MEMS装置
公开(公告)号：EP1721866B1
公开(公告)日：2008-12-10
申请号：EP06116530.4
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Cunningham, Shawn, J. , Dereus, Dana R. , Sett, Subham , Tatic-Lucic, Svetlana
IPC分类号： B81B3/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00

74. 发明公开

EP1717195A1 Trilayered beam MEMS device and related methods 有权
标题翻译： MEMS-Schalter mit dreischichtigem Biegebalken unddiesbezüglicheVerfahren
公开(公告)号：EP1717195A1
公开(公告)日：2006-11-02
申请号：EP06118802.5
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Cunningham, Shawn, J. , Tatic-Lucic, Svetlana
IPC分类号： B81B3/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
摘要： Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.
摘要翻译：三层梁MEMS器件及相关方法。根据一个实施例，提供一种制造三层梁的方法。该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

75. 发明公开

EP1717194A1 Trilayered Beam MEMS device and related methods 有权
标题翻译：三层梁MEMS器件及相关方法
公开(公告)号：EP1717194A1
公开(公告)日：2006-11-02
申请号：EP06118800.9
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： Cunningham, Shawn, J. , Tatic-Lucic, Svetlana
IPC分类号： B81B3/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
摘要： Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.
摘要翻译：三层束MEMS器件及相关方法。根据一个实施例，提供了一种用于制造三层光束的方法。该方法可以包括在衬底上沉积牺牲层并且在牺牲层上沉积第一导电层。该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且形成穿过结构层到达第一导电微结构的通孔。此外，该方法可以包括以下步骤：在结构层上和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分离，其中结构层在第一端处由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

76. 发明授权

EP1454349B1 TRILAYERED BEAM MEMS DEVICE AND RELATED METHODS 有权
标题翻译：三层RAY MEMS设备及其相关方法
公开(公告)号：EP1454349B1
公开(公告)日：2006-09-27
申请号：EP02793902.4
申请日：2002-11-08
申请人： WiSpry, Inc.
发明人： CUNNINGHAM, Shawn, J. , TATIC-LUCIC, Svetlana
IPC分类号： H01L21/302 , H01L21/4763 , H01P1/10 , H01H57/00 , H02B1/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
摘要： A method for fabricating a trilayered beam MEMS device includes depositing a sacrificial layer (310) on a substrate and depositing and removing a portion of a first conductive layer on the sacrificial layer (310) to form a first conductive microstructure (312); depositing a structural layer (322) on the first conductive microstructure (312); the sacrificial layer (310), and the substrate (300) and forming a via through the structural layer (322) to the first conductive microstructure (312); depositing a second conductive layer (336) on the structural layer (322) and in the via; forming a second conductive microstructure (324) by removing a portion of the second conductive layer (336), wherein the second conductive microstructure (324) electrically communicates with the first conductive microstructure (312) through the via; and removing a sufficient amount of the sacrificial layer (310) so as to separate the first conductive microstructure (312) from the substrate, wherein the structural layer (322) is supported by the substrate at a first end is freely suspended above the substrate at an opposing second end.

77. 发明公开

EP1454333A4 MEMS DEVICE HAVING A TRILAYERED BEAM AND RELATED METHODS 有权
标题翻译： MEMS器件具有三层RAY和相关程序
公开(公告)号：EP1454333A4
公开(公告)日：2005-09-21
申请号：EP02797085
申请日：2002-11-08
申请人： CONVENTOR INC , TURNSTONE SYSTEMS INC
发明人： CUNNINGHAM SHAWN J , DEREUS DANA R , SETT SUBHAM , TATIC-LUCIC SVETLANA
IPC分类号： B81B3/00 , B81B7/00 , H01H1/04 , H01H1/50 , H01H59/00 , H01H61/04 , H01L21/302 , H01L23/373 , H01L23/522 , H01L27/12 , H01L29/86 , H02N1/00 , H02N10/00
CPC分类号： B81B3/0024 , B81B3/0051 , B81B2201/014 , B81B2201/018 , B81B2203/0118 , B81B2203/04 , B81B2207/07 , B81C1/0015 , B81C2201/0107 , B81C2201/0108 , B81C2201/0109 , H01H1/04 , H01H1/504 , H01H59/0009 , H01H61/04 , H01H2001/0042 , H01H2001/0063 , H01H2001/0089 , H01H2059/0072 , H01H2061/006 , H01L23/3735 , H01L23/522 , H01L27/1203 , H01L2924/0002 , H01L2924/09701 , H02N1/006 , H02N10/00 , Y10T29/49222 , H01L2924/00
摘要： A movable, trilayered microcomponent (108) suspended over a substrate (102) is provided and includes a first electrically conductive layer (116) patterned to define a movable electrode (114). The first metal layer (116) is separated from the substrate (102) by a gap. The microcomponent (108) further includes a dielectric layer formed (112) on the first metal layer (116) and having an end fixed with respect to the substrate (102). Furthermore, the microcomponent (102) includes a second electrically conductive layer (120) formed on the dielectric layer (112) and patterned to define an electrode interconnect (124) for electrically communicating with the movable electrode (114).

79. 发明专利

JP2016079818A 駆動装置及びその取付け構造有权
标题翻译：驱动装置及其配件结构
公开(公告)号：JP2016079818A
公开(公告)日：2016-05-16
申请号：JP2014208762
申请日：2014-10-10
申请人： SMK株式会社
发明人：藤井勝人 , 松田健 , 渡邉芳則 , 秋田祐樹
IPC分类号： F03G7/06
CPC分类号： F03G7/065 , F16M13/02 , H02N10/00
摘要：【課題】半田レスで取り付けることができ、且つ、駆動力の伝達ロスを防止することができる駆動装置及びその取付け構造の提供。【解決手段】表面部に動作凹部31,31...からなる動作基部32を有するベース部材3と、ベース部材3と対向するように配置され、対向面側に動作凹部31内に挿入される動作凸部41を有する可動部材4と、ベース部材3と可動部材4との間に介在され、通電した際の発熱により収縮する形状記憶合金部材2とを備え、形状記憶合金部材2の通電による収縮に連動して可動部材4をベース部材3に対し離反する方向に移動させるようにした駆動装置1において、ベース部材3には、その形状記憶合金部材芯軸方向中央部に該中央部を支持体Aに固定するための被固定部を備えている。【選択図】図1
摘要翻译：要解决的问题：提供驱动装置及其装配结构，其中可以在无焊接的情况下安装它，并且可以防止驱动力的传输损失。解决方案：驱动装置1被构造成使得装置包括基部构件3，基部构件3具有由其表面上的操作凹部31,31构成的操作基部32;可移动构件4，其布置成面向基部构件3并具有在相对平面处插入到操作凹部31中的操作突起41 以及形状记忆合金部件2，其配置在基部部件3和可动部件4之间，并且在进行通电时通过产生的热量收缩，并且可动部件4在与基部部件3分离的方向上移动与形状记忆合金构件2的电通电下的收缩配合。基部构件3设置有固定在形状记忆合金构件2的轴向中央部的部分以便将中心部分固定在支撑件A上。选择的图示：图1

80. 发明专利

JP2013055877A Actuator 审中-公开
标题翻译：执行机构
公开(公告)号：JP2013055877A
公开(公告)日：2013-03-21
申请号：JP2012174065
申请日：2012-08-06
申请人： Canon Inc , キヤノン株式会社
发明人： YAMAMOTO JUN , IKEDA SOTOMITSU
IPC分类号： H02N11/00
CPC分类号： F03G7/00 , H01L41/094 , H01L41/0946 , H01L41/0953 , H01L41/0986 , H02N10/00
摘要： PROBLEM TO BE SOLVED: To provide an actuator for which drive control is facilitated and generation force is large.SOLUTION: An extension/contraction type actuator includes a cylindrical outer frame body for which a distance between a bottom part and a top part is shortened by spreading in a side face direction, and a deformation unit which is housed on the inner side of the outer frame body and comprises a plurality of deformation elements to be deformed by voltage application. In the deformation unit, when a voltage is applied, the plurality of deformation elements are deformed with each other to spread the outer frame body in the side face direction.

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