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71. 发明申请

US20150167197A1 CRYSTAL PRODUCING APPARATUS, SiC SINGLE CRYSTAL PRODUCING METHOD, AND SiC SINGLE CRYSTAL 审中-公开
标题翻译：水晶生产设备，SiC单晶生产方法和SiC单晶
公开(公告)号：US20150167197A1
公开(公告)日：2015-06-18
申请号：US14630607
申请日：2015-02-24
申请人： NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
发明人： Toru UJIHARA , Shunta HARADA , Kazuaki SEKI , Can ZHU , Mitsuya NAGAOKA
IPC分类号： C30B19/10 , C30B29/36 , C30B19/06
CPC分类号： C30B19/103 , C30B9/06 , C30B17/00 , C30B19/04 , C30B19/068 , C30B19/10 , C30B29/06 , C30B29/20 , C30B29/36
摘要： Provided is a crystal producing apparatus capable of producing a single crystal having excellent quality. The crystal producing apparatus for growing a single crystal on a crystal growth surface of a seed crystal in a raw material solution by a liquid phase growth method, includes: a liquid tub which accommodates a raw material solution; a crystal holding element which holds a seed crystal; and a solution flowing element which allows the raw material solution in the liquid tub to flow. Among these, the crystal holding element is able to hold the seed crystal in the liquid tub and is movable in at least a partial region on an xy plane perpendicular to a z-axis that extends in a depth direction of the liquid tub.
摘要翻译：提供一种能够生产具有优良品质的单晶的晶体制造装置。用于通过液相生长法在原料溶液中晶种生长表面上生长单晶的结晶产生装置包括：容纳原料溶液的液槽; 保持晶种的晶体保持元件; 以及允许液体桶中的原料溶液流动的溶液流动元件。其中，晶体保持元件能够将晶种保持在液槽中，并且能够在垂直于在液槽的深度方向上延伸的z轴的xy平面上的至少部分区域中移动。

72. 发明申请

US20140116324A1 PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL 有权
标题翻译： SiC单晶的生产设备和生产方法
公开(公告)号：US20140116324A1
公开(公告)日：2014-05-01
申请号：US14125625
申请日：2012-06-15
申请人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
发明人： Kazuhiko Kusunoki , Kazuhito Kamei , Nobuyoshi Yashiro , Nobuhiro Okada , Hironori Daikoku , Motohisa Kado , Hidemitsu Sakamoto
IPC分类号： C30B35/00 , C30B11/00 , C30B15/32
CPC分类号： C30B35/00 , C30B9/10 , C30B11/003 , C30B15/32 , C30B17/00 , C30B19/068 , C30B19/08 , C30B29/36 , Y10T117/1068 , Y10T117/1092
摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.
摘要翻译：一种用于制造SiC单晶的装置包括用于容纳Si-C溶液的坩埚和具有附接有SiC晶种（36）的下端面的种子轴。种子轴包括在坩埚的高度方向上延伸并具有第一通道的内管。外管容纳内管，构成内管之间的第二通道，下端面覆盖外管下端开口的底部。第一通道和第二通道的一个通道用作冷却剂气体向下流动的引入通道，另一个通道用作冷却剂气体向上流动的排出通道。构成引入通道的管内的区域与SiC晶种不小于60％的区域重叠。

73. 发明申请

US20120067273A1 METHODS FOR EFFICIENTLY MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL FOR SOLAR CELLS AND THE LIKE 有权
标题翻译：用于有效地制造用于太阳能电池的材料的半导体体的方法
公开(公告)号：US20120067273A1
公开(公告)日：2012-03-22
申请号：US13299031
申请日：2011-11-17
申请人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
发明人： Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G. D. Stephen Hudelson , Ralf Jonczyk
IPC分类号： C30B11/00 , C30B19/10
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

74. 发明申请

US20090000540A1 LIQUID-PHASE GROWTH APPARATUS AND METHOD 失效
标题翻译：液相生长装置和方法
公开(公告)号：US20090000540A1
公开(公告)日：2009-01-01
申请号：US12168464
申请日：2008-07-07
申请人： Masaki MIZUTANI , Katsumi NAKAGAWA , Takehito YOSHINO , Shoji NISHIDA
发明人： Masaki MIZUTANI , Katsumi NAKAGAWA , Takehito YOSHINO , Shoji NISHIDA
IPC分类号： C30B19/06
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译：用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。衬底保持器包括连接器，接收部件和推动部件。接收部件和推动部件彼此相对并且通过连接器连接。推动部件保持基板的上部，而接收部件保持基板的下部。将含有垂直保持的基板的基板保持器浸入溶液中。接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

75. 发明授权

US07407547B2 Liquid-phase growth apparatus and method 失效
标题翻译：液相生长装置及方法
公开(公告)号：US07407547B2
公开(公告)日：2008-08-05
申请号：US11270562
申请日：2005-11-10
申请人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B11/02
CPC分类号： C30B19/068 , C30B19/02 , C30B29/06 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
摘要翻译：用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。衬底保持器包括连接器，接收部件和推动部件。接收部件和推动部件彼此相对并且通过连接器连接。推动部件保持基板的上部，而接收部件保持基板的下部。将含有垂直保持的基板的基板保持器浸入溶液中。接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

76. 发明授权

US06872248B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US06872248B2
公开(公告)日：2005-03-29
申请号：US10400636
申请日：2003-03-28
申请人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , C30B19/04 , C30B19/10
CPC分类号： C30B19/068 , C30B19/062 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。适用于实施所述液相生长过程的液相生长装置。

77. 发明授权

US5922126A Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder 失效
标题翻译：半导体液相外延生长方法及装置及其晶圆架
公开(公告)号：US5922126A
公开(公告)日：1999-07-13
申请号：US866259
申请日：1997-05-30
申请人： Kazuyoshi Furukawa , Masami Iwamoto
发明人： Kazuyoshi Furukawa , Masami Iwamoto
IPC分类号： C30B19/06
CPC分类号： C30B19/068 , C30B19/06
摘要： The disclosed semiconductor liquid phase epitaxial growth method and apparatus and the wafer holder used therefor can improve the deposition of polycrystal, the non-uniformity of film thickness, the thermal deterioration of the substrate, etc. The wafer holder comprises a holder body (11) formed with at least one wafer accommodating space in which at least two semiconductor wafers (15) can be held in such a way that reverse surfaces of the two wafers are brought into contact with two opposing inner side walls of the wafer holder and right surfaces of the two wafers are opposed to each other with a predetermined space between the two; and a holder cover (12) for covering an open surface of the holder body (11). Further, the holder body (11) is formed with an inlet port (16) for injecting a source into the wafer accommodating space and an outlet port (13) for exhausting the source from the wafer accommodating space.
摘要翻译：所公开的半导体液相外延生长方法和装置以及用于其的晶片保持架可以改善多晶体的沉积，膜厚度的不均匀性，基板的热劣化等。晶片保持器包括保持器主体（11）形成有至少一个晶片容纳空间，其中至少两个半导体晶片（15）可以被保持为使得两个晶片的反面与晶片保持器的两个相对的内侧壁接触，并且右表面两个晶片在两者之间具有预定的空间彼此相对; 以及用于覆盖保持器主体（11）的开放表面的保持器盖（12）。此外，保持体（11）形成有用于将源注入晶片容纳空间的入口（16）和用于从晶片容纳空间排出源的出口（13）。

78. 发明授权

US4200484A Method of fabricating multiple layer composite 失效
标题翻译：多层复合材料的制作方法
公开(公告)号：US4200484A
公开(公告)日：1980-04-29
申请号：US831033
申请日：1977-09-06
申请人： Howard L. Glass
发明人： Howard L. Glass
IPC分类号： C30B19/02 , C30B19/06 , C30B19/12 , B01J17/04
CPC分类号： C30B19/12 , C30B19/02 , C30B19/068 , C30B29/28
摘要： A pair of substrates is mounted with first faces thereof directed away from each other and second faces thereof in sealing contact with each other. The substrates are then immersed in a first molten flux for depositing a film of a first material on the first faces of each of the substrates by liquid phase epitaxy (LPE). During the immersion in the first molten flux, the second faces of the substrates, being clamped against each other, seal each other from contact with the flux. After removal from the first flux, the pair of substrates is mounted with the films on the first faces thereof in sealing contact with each other. The substrates are then immersed in a second molten flux for depositing a film of a second material on the second faces of each of the substrates by LPE. The second material is, typically, different from the first material. During the immersion in the second molten flux, the films on the first faces of the substrates, being clamped against each other, seal each other from contact with the flux.
摘要翻译：安装一对基板，其第一面彼此远离并彼此密封接触。然后将衬底浸入第一熔融助熔剂中，以通过液相外延（LPE）在每个衬底的第一面上沉积第一材料的膜。在浸入第一熔融焊剂期间，彼此夹紧的基板的第二面彼此密封，不与焊剂接触。在从第一通量去除之后，一对基板被安装在其第一面上的膜彼此密封接触。然后将衬底浸入第二熔融焊剂中，以通过LPE在每个衬底的第二面上沉积第二材料的膜。第二种材料通常不同于第一种材料。在浸入第二熔融焊剂中时，彼此夹紧的基板的第一面上的膜彼此密封，不与焊剂接触。

79. 发明授权

US4026735A Method for growing thin semiconducting epitaxial layers 失效
标题翻译：生长薄半导体外延层的方法
公开(公告)号：US4026735A
公开(公告)日：1977-05-31
申请号：US717806
申请日：1976-08-26
申请人： G. Sanjiv Kamath , Hollen P. Mitchell
发明人： G. Sanjiv Kamath , Hollen P. Mitchell
IPC分类号： C30B19/06 , H01L21/208
CPC分类号： C30B19/068 , C30B19/062 , Y10S117/90
摘要： The specification describes a liquid phase epitaxial (LPE) crystal growth process wherein semi-insulating epitaxial layers of gallium arsenide (GaAs) are formed on selected substrates by dipping the substrates into a saturated solution of GaAs in gallium. Prior to exposing the substrates to the above solution, the substrates are shielded by a nonreactive container of a material possessing a high thermal conductivity which, when immersed in the solution, serves to establish a thermal equilibrium between the substrate and the solution. This insures good nucleation in and crystal growth of the high quality semiconductor layers grown, and these layers may be grown to minimum thicknesses on the order of 0.2 micrometers or less with excellent control.
摘要翻译：本说明书描述了一种液相外延（LPE）晶体生长工艺，其中通过将衬底浸入镓中的GaAs的饱和溶液中，在选定的衬底上形成砷化镓（GaAs）的半绝缘外延层。在将衬底暴露于上述溶液之前，衬底被具有高导热性的材料的非反应性容器屏蔽，当浸入溶液中时，其用于在衬底和溶液之间建立热平衡。这确保生长的高质量半导体层的良好的成核和晶体生长，并且这些层可以生长至0.2微米或更小的最小厚度，具有优异的控制。

80. 发明授权

EP3030700B1 METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL 有权
公开(公告)号：EP3030700B1
公开(公告)日：2018-11-28
申请号：EP14834159.7
申请日：2014-08-05
申请人： Ricoh Company, Ltd.
发明人： SATOH, Takashi , SARAYAMA, Seiji , HAYASHI, Masahiro , WADA, Junichi
IPC分类号： C30B29/40 , C30B9/00 , C30B19/02 , C30B19/06 , C30B9/10
CPC分类号： C30B9/00 , C30B9/10 , C30B19/02 , C30B19/06 , C30B19/068 , C30B29/406
摘要： A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.

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