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    • 71. 发明授权
    • Process and composition for drying of gaseous hydrogen halides
    • 用于干燥气态卤化氢的方法和组合物
    • US4925646A
    • 1990-05-15
    • US357049
    • 1989-05-25
    • Glenn M. TomDuncan W. Brown
    • Glenn M. TomDuncan W. Brown
    • B01D53/28C01B7/07C01B7/09C01B7/13C01B7/19C01G1/06
    • C01B7/093B01D53/28C01B7/0718C01B7/135C01B7/197C01G1/06
    • A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.
    • 一种用于干燥式HX的气态卤化氢的方法,其中X是溴,氯,氟嘌呤或碘,以除去其中含有杂质的水分杂质,其中提供了一种清除剂前体组合物,包括其部分或完全烷基化的载体 金属烷基化合物或侧基。 前体组合物与气态卤化氢反应以将金属烷基化合物和/或侧链官能团转化成相应的金属卤化物化合物和/或侧基官能团,其又与水杂质反应以产生基本上完全无水的 (低于0.1ppm)气态卤化氢流出物。 本发明的方法可用于生产用于半导体制造操作的高纯度无水气态卤化氢。