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    • 79. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • WO2006107114A1
    • 2006-10-12
    • PCT/JP2006/307522
    • 2006-04-04
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.ARITA, KiyoshiNAKAGAWA, Akira
    • ARITA, KiyoshiNAKAGAWA, Akira
    • H01J37/32
    • H01J37/32532H01J37/3244H01J37/32449
    • A plasma processing apparatus includes a stage (31) which is a lower electrode (3), an upper electrode (4) which is a counter electrode for the lower electrode, and a processing chamber (2) in which the lower and the upper electrodes are placed. The apparatus supplies a gas to a plasma generation space (A) located between the lower and the upper electrodes to generate a plasma so that a processing object (W) is subjected to plasma processing. In the apparatus, the upper electrode is formed up of a body portion (41) having a gas supply port (T), a gas-permeable porous plate (43) located on the underside of the body portion (41) so as to close the gas supply port (T), and a support member (45) for supporting the outer edge portion of the porous plate. Slits (S) for absorption of strain due to thermal expansion in the plasma processing are formed at a pitch in the outer edge portion of the porous plate.
    • 等离子体处理装置包括作为下电极(3)的台(31),作为下电极的对电极的上电极(4),以及处理室(2),其中下电极 摆放在。 该装置向位于下电极和上电极之间的等离子体产生空间(A)提供气体,以产生等离子体,从而对处理对象(W)进行等离子体处理。 在该装置中,上电极由具有气体供给口(T)的主体部(41)和位于主体部(41)的下侧的透气性多孔板(43)形成,以便封闭 气体供给口(T)以及用于支撑多孔板的外缘部的支承部件(45)。 在等离子体处理中由于热膨胀而引起的应变吸收的狭缝(S)以多孔板的外缘部分的间距形成。