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    • 73. 发明授权
    • Ink jet ink, method of producing ink jet ink, ink jet recording method, ink cartridge, and cyan ink
    • 喷墨油墨,喷墨油墨的制造方法,喷墨记录方法,墨盒和青色墨水
    • US07806970B2
    • 2010-10-05
    • US12551900
    • 2009-09-01
    • Fumiaki FujiokaShinichi Hakamada
    • Fumiaki FujiokaShinichi Hakamada
    • C09D11/02B41J2/01
    • C09D11/324B41J2/17513C09D11/32C09D11/322
    • An object of the present invention is to provide an ink jet ink capable of suppressing bronzing phenomenon in which a reflected light of an image looks red, is excellent in color developability, and gives an image with suppressed bleeding even when formed adjacent to an image formed with a black ink. The ink jet ink comprises water, coloring materials, and a water-soluble organic solvent, in which the coloring materials comprise at least one dye selected from the group consisting of C.I. Direct Blue 199, C.I. Direct Blue 86, and C.I. Acid Blue 9, and a pigment having a copper phthalocyanine skeleton; the water-soluble organic solvent comprises a poor medium for the pigment having the copper phthalocyanine skeleton; and a content of the pigment having the copper phthalocyanine skeleton in the ink is less than 1 mass % with respect to a total mass of the ink jet ink.
    • 本发明的目的是提供一种喷墨油墨,其能够抑制图像的反射光看起来红色的烫金现象,显色性优异,并且即使在与形成的图像相邻地形成时也能够抑制渗色的图像 与黑色墨水。 喷墨油墨包括水,着色材料和水溶性有机溶剂,其中着色材料包含至少一种选自C.I.的染料。 直接蓝199,C.I. 直蓝86和C.I. 酸性蓝9和具有铜酞菁骨架的颜料; 水溶性有机溶剂包含用于具有铜酞菁骨架的颜料的不良介质; 并且在油墨中具有铜酞菁骨架的颜料的含量相对于喷墨油墨的总质量小于1质量%。
    • 74. 发明申请
    • Water-Based Fluorescent Ink, Recorded Image Using The Same, and Judging Method
    • 水基荧光墨水,使用相同的记录图像和判断方法
    • US20090078889A1
    • 2009-03-26
    • US12272194
    • 2008-11-17
    • Masako UdagawaShoji KoikeMakoto AokiAkira NagashimaShinichi Hakamada
    • Masako UdagawaShoji KoikeMakoto AokiAkira NagashimaShinichi Hakamada
    • A61N5/06
    • C09D11/50Y10T428/24802Y10T428/24893Y10T428/24901
    • The present invention relates to a water-based fluorescent ink for the purpose of measurement or judgment of the fluorescence emission in a visible light region by an excitation wavelength in a predetermined ultraviolet range, containing water, a coloring material dissolved or dispersed in water, and an organic solvent, having a plurality of fluorescent groups in the coloring material structure of the coloring material, and using a water-soluble coloring material having a sulfonic acid group as the water-soluble group in the state of a free acid, capable of improving the water resistance and the light resistance, dramatically increasing the content of the fluorescent coloring material in the ink, which has conventionally been included only by a small amount in the ink due to the concentration quenching problem, obtaining preferable fluorescence emission and water resistance of the recorded image, and providing preferable adhesion resistance to the recording medium of the coloring material and reliability.
    • 本发明涉及一种水性荧光墨水,其目的在于测量或判断可见光区域中的荧光发射是否在预定的紫外线范围内的激发波长,包含水,溶解或分散在水中的着色材料,以及 有机溶剂,在着色材料的着色材料结构中具有多个荧光基团,并且使用具有磺酸基作为游离酸状态的水溶性基团的水溶性着色材料,能够改善 耐水性和耐光性,显着增加了由于浓度骤冷问题而在墨中常规包含的油墨中的荧光着色材料的含量,获得了优选的荧光发射和耐水性 记录图像,并且对着色剂的记录介质提供优选的粘合性 可靠性和可靠性。
    • 80. 发明授权
    • Method of manufacturing a semiconductor device having a fin type
capacitor electrode
    • 具有翅片型电容器电极的半导体器件的制造方法
    • US6146964A
    • 2000-11-14
    • US94488
    • 1998-06-10
    • Shinichi Hakamada
    • Shinichi Hakamada
    • H01L27/04H01L21/02H01L21/822H01L21/8242H01L27/108H01L21/20
    • H01L28/87H01L27/10852
    • The method according to this invention, of manufacturing a semiconductor device includes forming a polysilicon layer on a silicon substrate, forming a first resist pattern on the polysilicon layer, introducing impurity ions into the polysilicon layer with the first resist pattern used as a mask to form a high density impurity layer within the polysilicon layer, forming a second resist pattern on the polysilicon layer at a region where the first resist pattern is formed, the second resist pattern being greater than the first resist pattern so that the region where the first resist pattern is formed and a peripheral region thereof is covered by the second resist pattern, and etching the polysilicon layer including the high density impurity layer using the second resist pattern as a mask. From the above method, a portion of the polysilicon layer located at a region not covered by the second resist layer and the high density impurity layer are etched.
    • 根据本发明的制造半导体器件的方法包括在硅衬底上形成多晶硅层,在多晶硅层上形成第一抗蚀剂图案,将杂质离子引入多晶硅层,第一抗蚀剂图案用作掩模以形成 在所述多晶硅层内的高密度杂质层,在形成有所述第一抗蚀剂图案的区域的所述多晶硅层上形成第二抗蚀剂图案,所述第二抗蚀剂图案大于所述第一抗蚀剂图案,使得所述第一抗蚀剂图案 并且其周边区域被第二抗蚀剂图案覆盖,并且使用第二抗蚀剂图案作为掩模来蚀刻包括高密度杂质层的多晶硅层。 从上述方法,蚀刻位于未被第二抗蚀剂层和高密度杂质层覆盖的区域的多晶硅层的一部分。