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    • 78. 发明授权
    • Method of manufacturing a photomask for an optical memory
    • 制造光学存储器的光掩模的方法
    • US5286583A
    • 1994-02-15
    • US798616
    • 1991-11-26
    • Junji HirokaneTetsuya InuiMichinobu MiedaKenji Ohta
    • Junji HirokaneTetsuya InuiMichinobu MiedaKenji Ohta
    • G03F1/68G03F1/80G11B7/26H01L21/027H01L21/30G03F9/00
    • G11B7/261G03F1/00G03F1/26
    • A method of manufacturing a photomask for an optical memory, the photomask having two types of pattern where guide tracks and formatting pits are different in amount of optical transmissions, including the steps of (a) forming on a transparent substrate a thin film of which light transmission amount depends upon its thickness; (b) forming a photoresist film on the thin film; (c) exposing the photoresist film to light with different light intensities depending selectively on the guide tracks or formatting pits; (d) eliminating the photoresist film exposed to the more intense light by the development till the thin film becomes surface; (e) etching the thin film exposed to the more intense light and surfaced; (f) eliminating the photoresist film till the thin film exposed to the less intense light becomes surface; (g) etching away the thin film exposed to the more intense light and surfaced till the transparent substrate becomes surface; and (h) eliminating the remnant photoresist.
    • 一种制造光存储器的光掩模的方法,所述光掩模具有两种类型的图案,其中导轨和格栅凹坑的光传输量不同,包括以下步骤:(a)在透明基板上形成薄膜, 传输量取决于其厚度; (b)在薄膜上形成光致抗蚀剂膜; (c)根据导轨或格式化凹坑选择性地将光致抗蚀剂膜暴露于具有不同光强度的光; (d)通过显影来消除暴露于更强光的光致抗蚀剂膜,直到薄膜变成表面; (e)蚀刻暴露于更强烈的光并露出的薄膜; (f)消除光致抗蚀剂膜,直到暴露于不太强光的薄膜变成表面; (g)蚀刻掉暴露于更强光的薄膜,并露出,直到透明基板变成表面; 和(h)消除残余光致抗蚀剂。