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    • 77. 发明授权
    • Method and apparatus for encoding digital data
    • 用于编码数字数据的方法和装置
    • US4369472A
    • 1983-01-18
    • US222278
    • 1981-01-02
    • Masato TanakaShunsuke Furukawa
    • Masato TanakaShunsuke Furukawa
    • G11B20/14G11B5/09
    • G11B20/1426
    • Digital data formed of binary bits of first and second values occupying consecutive bit cells of predetermined intervals are encoded such that successive binary bits of the first or second values are represented by predetermined separations between succeeding transitions. A first transition is produced at a first reference point in a bit cell when a binary bit of the second value changes over to a binary bit of the first value. When successive binary bits of the first value are sensed, a respective second transition is produced at a second reference point in a bit cell after sensing every 2 or 3 binary bits of the first value. When successive binary bits of the second value are sensed, a respective second transition is produced at the second reference point in a bit cell when at least two successive binary bits of the first value are followed by a binary bit of the second value and also after sensing every 3 or 4 successive binary bits of the second value, such that the last-mentioned second transition at the second reference point is separated from the closest first transition thereto by at least 1.5 bit cell intervals but no more than 4.5 bit cell intervals and successive ones of the second transitions are separated from each other by no more than 4 bit cell intervals.
    • 对以占用预定间隔的连续位单元的第一和第二值的二进制位形成的数字数据进行编码,使得第一或第二值的连续二进制位由后续转换之间的预定间隔表示。 当第二值的二进制位改变为第一值的二进制位时,在位单元中的第一参考点处产生第一转换。 当检测到第一值的连续二进制位时,在感测到第一值的每2或3个二进制位之后,在位单元中的第二参考点处产生相应的第二转换。 当感测到第二值的连续二进制位时,当第一值的至少两个连续二进制位后面跟随第二值的二进制位并且还在第二值的二进制位后面时,在位单元中的第二参考点处产生相应的第二转换 感测第二值的每3或4个连续二进制位,使得在第二参考点处的最后提到的第二转换与其最接近的第一转换分开至少1.5位单元间隔,但不超过4.5位单元间隔, 第二转换中的连续的一个彼此分离不超过4位的单元间隔。
    • 78. 发明授权
    • Semiconductor image sensor having CCD shift register
    • 具有CCD移位寄存器的半导体图像传感器
    • US4194213A
    • 1980-03-18
    • US825706
    • 1977-08-18
    • Yasuo KanoShunsuke FurukawaTadayoshi Mifune
    • Yasuo KanoShunsuke FurukawaTadayoshi Mifune
    • H01L27/148H01L29/423H01L29/78G11C19/28H01L27/14H01L31/00
    • H01L27/14887H01L27/14831H01L29/42396
    • In a semiconductor image sensor composed of a plurality of charge-coupled photo-sensor elements, each of said photo-sensor elements comprises a substrate of one conductivity type with an insulating layer thereon, a first electrode on the insulating layer having a first electrode portion spaced from the substrate by a thickness of said insulating layer for defining, in combination with a potential applied to the first electrode, a first region in the substrate which is a potential well for minority charge carriers therein, a second electrode in the insulating layer having second and third electrode portions which are respectively adjacent to and remote from the first electrode, and which are spaced from the substrate by different thicknesses of the insulating layer for defining, in combination with a potential applied to the second electrode, adjacent second and third regions in the substrate which are respectively a potential barrier to the potential well in the first region and a potential well for the minority charge carriers relative to the potential barrier of the second region, and a third electrode in the insulating layer spaced from the substrate and second electrode by the insulating layer and having a fourth electrode portion overlapping the third electrode portion, with at least one of the second and third electrodes having a cutout portion cooperating with an adjacent portion of the other of such electrodes to define an opening above the aforementioned first region which is a potential well.
    • 在由多个电荷耦合光电传感器元件组成的半导体图像传感器中,每个所述光传感器元件包括一个导电类型的衬底,其上具有绝缘层,绝缘层上的第一电极具有第一电极部分 与衬底隔开所述绝缘层的厚度,用于与施加到第一电极的电位组合地限定衬底中的第一区域,该第一区域是其中的少数电荷载流子的势阱,绝缘层中的第二电极具有 第二和第三电极部分,其分别与第一电极相邻并远离第一电极,并且与绝缘层的不同厚度与衬底间隔开,用于与施加到第二电极的相邻的第二和第三区域 在基板中分别是第一区域中的势阱的潜在势垒和小池 对于少数电荷载体相对于第二区域的势垒为小,并且绝缘层中的第三电极通过绝缘层与衬底和第二电极间隔开,并且具有与第三电极部分重叠的第四电极部分, 第二和第三电极中的至少一个电极具有与这些电极中的另一个的相邻部分配合的切口部分,以限定位于上述第一区域上方的开口,该第一区域是势阱。
    • 79. 发明授权
    • Disc playback apparatus for playback of music and digital data
    • 用于播放音乐和数字数据的光盘播放装置
    • US4977550A
    • 1990-12-11
    • US291415
    • 1988-12-22
    • Tsuneo FuruyaShunsuke FurukawaKatsuya Hori
    • Tsuneo FuruyaShunsuke FurukawaKatsuya Hori
    • G11B20060101G11B20/10G11B20/18G11B20/20G11B27/10G11B27/30
    • G11B20/1809G11B20/10G11B27/105G11B27/3063G11B2020/10916G11B2220/213G11B2220/2545
    • Apparatus for playback from a disc on which main digital data and subsidiary digital data for selectively reproducing of the main digital data have been recorded in multiplex fashion incorporates a write clock generator for generating a write clock synchronized with a reproduced signal from the disc, a read clock generator for generating a read clock having a predetermined period, a buffer memory into which main digital data and subsidiary digital data reproduced from the disc are written and read out in response to the read clock so as to de-interleave the main digital data, and a control unit for seeking a position to be reproduced in the main digital data in response to the subsidiary digital data read out from the buffer memory. The buffer memory into which the subsidiary digital data is written may be a FIFO buffer register which is provided separately from the buffer memory into which the main digital date is written.
    • 用于从其上以多路复用方式记录用于选择性地再现主数字数据的主数字数据和辅助数字数据的盘重放的装置包括用于产生与来自盘的再现信号同步的写时钟的写时钟发生器, 时钟发生器,用于产生具有预定周期的读时钟;缓冲存储器,响应于所读取的时钟写入和读出从盘再现的主数字数据和辅助数字数据,以便对主数字数据进行解交织, 以及控制单元,用于响应于从缓冲存储器读出的辅助数字数据,寻求在主数字数据中再现的位置。 写入辅助数字数据的缓冲存储器可以是与写入主数字日期的缓冲存储器分开提供的FIFO缓冲寄存器。