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71. 发明授权

US5615730A Methods for inspecting the content of structure modifying additives in molten cast iron and chilling tendency of flaky graphite cast iron 失效
标题翻译：检查熔融铸铁中结构改性添加剂含量的方法和片状石墨铸铁的冷却倾向
公开(公告)号：US5615730A
公开(公告)日：1997-04-01
申请号：US320420
申请日：1994-10-05
申请人： Hidetaka Hiraoka , Mayuki Morinaka , Yasushi Kubota
发明人： Hidetaka Hiraoka , Mayuki Morinaka , Yasushi Kubota
IPC分类号： G01N25/06 , G01N25/04 , G01N33/20 , B22D46/00 , B22D27/00
CPC分类号： G01N25/04 , G01N33/206
摘要： Methods for inspecting the content of structure modifying additives in the molten bath of cast iron and chilling tendency of flaky graphite cast iron by means of a thermal analyzing test and a sampling vessel to be used therefor. The method consists of the steps for: obtaining a first cooling curve of the molten bath of cast iron using a first sampling vessel, obtaining a second cooling curve of the molten bath using a second sampling vessel in which small amounts of tellurium are contained, and comparing the first cooling curve with the second cooling curve.
摘要翻译：用于通过热分析试验和用于其的采样容器检查铸铁熔融浴中的结构改性添加剂的含量和片状石墨铸铁的冷却倾向的方法。该方法包括以下步骤：使用第一采样容器获得铸铁熔池的第一冷却曲线，使用其中容纳少量碲的第二取样容器获得熔池的第二冷却曲线，以及将第一冷却曲线与第二冷却曲线进行比较。

72. 发明授权

US5592012A Multivalued semiconductor read only storage device and method of driving the device and method of manufacturing the device 失效
标题翻译：多值半导体只读存储器件和驱动器件的方法及其制造方法
公开(公告)号：US5592012A
公开(公告)日：1997-01-07
申请号：US558977
申请日：1995-11-13
申请人： Yasushi Kubota
发明人： Yasushi Kubota
IPC分类号： G11C11/56 , G11C17/12 , H01L27/06 , H01L27/112 , H01L29/76 , H01L29/94
CPC分类号： G11C16/0483 , G11C11/56 , G11C11/5692 , G11C17/123 , H01L27/0688 , H01L27/112
摘要： In a four-valued read only storage device, each of memory cells arrayed in matrix form at intersections of word lines and bit lines has four metal oxide semiconductor (MOS) transistors. The four MOS transistors have different combinations of two channel impurity profiles and two effective channel lengths in correspondence with storage data. Either data corresponding to the channel impurity profile or data corresponding to the effective channel length is read out from a memory cell by controlling a gate voltage and a drain voltage to be applied to a selected MOS transistor in the memory cell.
摘要翻译：在四值只读存储装置中，在字线和位线的交叉处以矩阵形式排列的每个存储单元具有四个金属氧化物半导体（MOS）晶体管。四个MOS晶体管具有与存储数据相对应的两个沟道杂质分布和两个有效沟道长度的不同组合。通过控制要施加到存储单元中的选定MOS晶体管的栅极电压和漏极电压，从存储单元读出对应于沟道杂质分布的数据或对应于有效沟道长度的数据。

73. 发明授权

US5414654A Driving circuit of a ferroelectric memory device and a method for driving the same 失效
标题翻译：铁电存储器件的驱动电路及其驱动方法
公开(公告)号：US5414654A
公开(公告)日：1995-05-09
申请号：US133253
申请日：1993-10-08
申请人： Yasushi Kubota , Shigeo Onishi
发明人： Yasushi Kubota , Shigeo Onishi
IPC分类号： G11C11/22 , G11C14/00 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： G11C11/22
摘要： A ferroelectric memory device according to the present invention comprises a plurality of bit lines carrying data signals and voltage signals, every adjacent two of the bit lines being paired to form a plurality of bit line pairs; sense amplifiers connected to each of the bit line pairs; a plurality of memory cells for storing data, each memory cell having a first capacitor and a first switching element, the first capacitor being connected to one of the bit lines via the first switching element, wherein the first capacitor includes a capacitor insulating film, at least one portion of the capacitor insulating film being formed of a ferroelectric material; a plurality of dummy cells for storing a reference voltage, each dummy cell having a second capacitor and a second switching element, the second capacitor being connected to one of the bit lines via the second switching element, wherein the second capacitor includes the capacitor insulating film at least one portion of the capacitor insulating film being formed of a ferroelectric material; a first common electrode line for controlling a voltage to be applied to the first capacitor; a second common electrode line for controlling a voltage to be applied to the second capacitor; a first word line for controlling the first switching element; and a second word line for controlling the second switching element, wherein a plurality of the memory cells and at least one of the dummy cells are connected to each bit line.
摘要翻译：根据本发明的铁电存储器件包括承载数据信号和电压信号的多个位线，每个相邻的两个位线被配对以形成多个位线对; 连接到每个位线对的读出放大器; 用于存储数据的多个存储单元，每个存储单元具有第一电容器和第一开关元件，所述第一电容器经由所述第一开关元件连接到所述位线之一，其中所述第一电容器包括电容器绝缘膜，所述电容绝缘膜的至少一部分由铁电体形成; 用于存储参考电压的多个虚拟单元，每个虚设单元具有第二电容器和第二开关元件，所述第二电容器经由所述第二开关元件连接到所述位线之一，其中所述第二电容器包括所述电容器绝缘膜电容器绝缘膜的至少一部分由铁电材料形成; 用于控制施加到第一电容器的电压的第一公共电极线; 用于控制施加到第二电容器的电压的第二公共电极线; 用于控制第一开关元件的第一字线; 以及用于控制第二开关元件的第二字线，其中多个存储单元和至少一个虚设单元连接到每个位线。

74. 发明授权

US5383159A Semiconductor memory device of alternately-activated open bit-line architecture 失效
标题翻译：半导体存储器件交替激活开放位线架构
公开(公告)号：US5383159A
公开(公告)日：1995-01-17
申请号：US120823
申请日：1993-09-15
申请人： Yasushi Kubota
发明人： Yasushi Kubota
IPC分类号： G11C11/401 , G11C7/18 , G11C11/4097 , H01L21/8242 , H01L27/108 , G11C7/00
CPC分类号： G11C11/4097 , G11C7/18
摘要： A semiconductor memory device of alternately-activated open bit-line architecture is provided wherein paired bit lines extend from opposite sides of sense amplifiers that are arranged in one direction and every other bit line is activated through activation of a word line intersecting the bit lines. The sense amplifiers in the neighboring first and second rows alternate with each other in a staggering manner. The bit lines extending from the sense amplifiers of the first row in a first direction and the bit lines extending from the sense amplifiers in the opposite, second direction constitute a bit line group between the first and second rows. Word lines and dummy word lines intersect the bit line group. In operation, signals opposite in phase to each other are applied to a selected word line and a corresponding dummy word line from a control section so that memory cells connected to the selected word line are electrically connected with the bit lines while the dummy cells connected with the same bit lines are electrically disconnected from these bit lines.
摘要翻译：提供交替激活的开放位线架构的半导体存储器件，其中成对的位线从沿一个方向布置的读出放大器的相对侧延伸，并且通过激活与位线相交的字线来激活每隔一个位线。相邻的第一和第二行中的读出放大器以交错的方式彼此交替。从第一行的读出放大器沿第一方向延伸的位线和从相反的第二方向的读出放大器延伸的位线构成第一和第二行之间的位线组。字线和虚拟字线与位线组相交。在操作中，相互相反的信号被施加到来自控制部分的选定字线和对应的虚拟字线，使得连接到所选字线的存储器单元与位线电连接，而虚拟单元与相同的位线与这些位线电断开。

75. 发明授权

US5245581A Semiconductor memory device with rapid sense amplification 失效
标题翻译：具有快速感知放大的半导体存储器件
公开(公告)号：US5245581A
公开(公告)日：1993-09-14
申请号：US668307
申请日：1991-03-13
申请人： Yasushi Kubota
发明人： Yasushi Kubota
IPC分类号： G11C11/409 , G11C11/401 , G11C11/4091 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： G11C11/4091
摘要： In each of the sense amplifiers of a DRAM, the common source terminal of pull-down transistors which are connected to a bit line pair is connected to a discharge line through first and second current paths. One end of the discharge line is grounded. The first and second current paths are provided with first and second switches, respectively. The first and second switches are independently controlled by a different signal. The first current path is further provided with a third switch. The third switch is turned on when the potentials of both of the bit lines are greater than a threshold, and turned off when one of the potentials is not greater than the threshold.

76. 发明授权

US08283501B2 Optically active 2,2′-biphenol derivative and production method of same 有权
标题翻译：光活性2,2'-联苯酚衍生物及其制备方法
公开(公告)号：US08283501B2
公开(公告)日：2012-10-09
申请号：US12811805
申请日：2009-01-06
申请人： Yoshikazu Ito , Yasushi Kubota , Tsutomu Inoue
发明人： Yoshikazu Ito , Yasushi Kubota , Tsutomu Inoue
IPC分类号： C07C39/15 , C07C37/68 , C07C37/86
CPC分类号： C07B57/00 , C07B2200/07 , C07C37/00 , C07C37/11 , C07C37/50 , C07C39/367 , C07C39/15
摘要： Disclosed herein are optically active biphenol derivatives represented by the following formulas (1) and (2), a method for optically resolving a biphenol derivative represented by formula (2′), a production method of an optically active biphenol derivative (1) comprising a step for reacting a Brønsted acid with a biphenol derivative (2), and a production method of an optically active biphenol derivative (3) comprising a step for reacting a Lewis acid with an optically active biphenol derivative (1) or an optically active biphenol derivative (2).
摘要翻译：本文公开了由下式（1）和（2）表示的光学活性联苯酚衍生物，用于光学拆分由式（2'）表示的联苯酚衍生物的方法，光学活性联苯酚衍生物（1）的制备方法，其包含使布朗斯台德酸与联苯酚衍生物（2）反应的步骤和光学活性联苯酚衍生物（3）的制备方法包括使路易斯酸与光学活性联苯酚衍生物（1）或光学活性联苯酚衍生物（2）。

77. 发明申请

US20110034688A1 OPTICALLY ACTIVE DIBENZAZEPINE DERIVATIVES 有权
标题翻译：光学活性二苯并恶唑衍生物
公开(公告)号：US20110034688A1
公开(公告)日：2011-02-10
申请号：US12936415
申请日：2009-04-08
申请人： Yasushi Kubota , Tsutomu Inoue
发明人： Yasushi Kubota , Tsutomu Inoue
IPC分类号： C07D493/04
CPC分类号： C07D317/60 , C07D491/06 , C07D491/16 , C07D491/20
摘要： It is to provide a novel optically active dibenzazepine derivative having a high utility value as an asymmetric phase-transfer catalyst. It is an optically active 6,7-dihydro-5H-dibenzo[c,e]azepine derivative represented by the following formula (1′), (wherein R represents a divalent organic group for cross-linking the 1st position and the 11th position; R1 and R2 are the same or different, and represent a hydrogen atom, halogen atom, or organic group, or R1 and R2 together represent a divalent organic group; R3′and R4′ are the same or different and represent a monovalent organic group, or R3′ and R4′ together form an organic group that forms a cyclic structure comprising an onium nitrogen atom; Ar represents a monovalent organic group; * represents optical activity, i.e., that one axially asymmetric isomer is present in excess of the other axially asymmetric isomer with respect to a bond axis that constitutes the biphenyl structure of the compound; and X− represents a counter anion).
摘要翻译：提供作为不对称相转移催化剂的具有高效用价值的新颖的光学活性二苯并氮杂衍生物。它是由下式（1'）表示的光学活性的6,7-二氢-5H-二苯并[c，e]吖庚因衍生物，其中R表示用于交联第1位和第11位的二价有机基 R 1和R 2相同或不同，表示氢原子，卤素原子或有机基团，或者R 1和R 2一起表示二价有机基团; R 3'和R 4'相同或不同，表示一价有机基团或R3'和R4'一起形成形成包含鎓氮原子的环状结构的有机基团; Ar表示一价有机基团; *表示光学活性，即一种轴向不对称异构体存在于另一种轴向相对于构成化合物的联苯结构的键轴的不对称异构体; X-表示抗衡阴离子）。

78. 发明授权

US07771764B2 Method for producing an extract of coffee beans 有权
标题翻译：生产咖啡豆提取物的方法
公开(公告)号：US07771764B2
公开(公告)日：2010-08-10
申请号：US10543891
申请日：2004-01-30
申请人： Takeshi Honda , Takeshi Imazawa , Takamune Tanaka , Takao Tomita , Yasushi Kubota , Naoki Orii , Tadashi Nakatsubo
发明人： Takeshi Honda , Takeshi Imazawa , Takamune Tanaka , Takao Tomita , Yasushi Kubota , Naoki Orii , Tadashi Nakatsubo
IPC分类号： A23F5/00
CPC分类号： A23F5/48 , A23F3/16 , A23F3/18 , A23F5/24 , A23F5/265 , A23L2/02 , A23L2/04 , A23L27/11
摘要： A method for producing an extract and/or a squeezed liquid, which includes: feeding a food to be extracted and/or squeezed into a crushing apparatus; adding a solvent into the crushing apparatus immediately after and/or while milling the food; extracting and/or squeezing a useful food component of the food into the solvent; and carrying out liquid-solid separation by removing the resulting extracted residue and/or squeezed residue with a continuous solid-liquid separation apparatus.
摘要翻译：一种提取物和/或挤压液体的制造方法，其特征在于，包括：将要提取和/或挤压的食品送入破碎装置; 在粉碎食物之后和/或同时在粉碎设备中加入溶剂; 将食物的有用食物成分提取和/或挤压到溶剂中; 并通过用连续的固液分离装置除去所得的萃取残渣和/或挤压的残留物进行液固分离。

79. 发明授权

US07714827B2 Integrated circuit for scan driving 有权
标题翻译：用于扫描驱动的集成电路
公开(公告)号：US07714827B2
公开(公告)日：2010-05-11
申请号：US10717235
申请日：2003-11-18
申请人： Yasushi Kubota , Seiji Murakami
发明人： Yasushi Kubota , Seiji Murakami
IPC分类号： G09G3/36
CPC分类号： G09G3/3266 , G09G3/20 , G09G3/3208 , G09G2310/0267 , G09G2310/0283 , G09G2310/08
摘要： An integrated circuit is provided for scan driving that can significantly reduce the chip size. In first region AODD, odd-numbered output pads OUT1, OUT3, . . . OUT173, OUT175, driver circuits DR1, DR3, . . . DR173, DR175, and flip-flops SREG1, SREG3, . . . SREG173, SREG175 in an order corresponding to the order of the odd-numbered scanning lines are each arranged as a column in the X-direction, and, at the same time, output pads OUTi, driver circuits DRi and flip-flops SREGi corresponding to the scanning lines are arranged in the same row in the Y-direction (chip width direction). In second region AEVEN, even-numbered output pads OUT2, OUT4, . . . OUT174, OUT176, driver circuits DR2, DR4, . . . DR174, DR176, and flip-flops SREG2, SREG4, . . . SREG174, SREG176 in an order corresponding to the order of the even-numbered scanning lines are each arranged as a column in the X-direction, and, at the same time, output pads OUTi, driver circuits DRi and flip-flops SREGi corresponding to the scanning lines are arranged in the same row in the Y-direction (chip width direction).
摘要翻译：提供了可以显着降低芯片尺寸的扫描驱动的集成电路。在第一区域AODD中，奇数编号的输出焊盘OUT1，OUT3，...。。。 OUT173，OUT175，驱动电路DR1，DR3，。。。 DR173，DR175和触发器SREG1，SREG3，。。。 SREG173，SREG175以与奇数扫描线的顺序对应的顺序分别排列成X方向的列，并且同时，输出焊盘OUTi，驱动电路DRi和触发器SREGi对应于扫描线在Y方向（芯片宽度方向）排列成同一行。在第二区域AEVEN中，偶数输出焊盘OUT2，OUT4。。。 OUT174，OUT176，驱动电路DR2，DR4，。。。 DR174，DR176和触发器SREG2，SREG4，。。 SREG174，SREG176以与偶数扫描线的顺序相对应的顺序分别排列成X方向的列，并且同时，输出焊盘OUTi，驱动电路DRi和触发器SREGi对应于扫描线在Y方向（芯片宽度方向）排列成同一行。

80. 发明授权

US07713563B2 Method for producing good-flavor butter milk associated dairy product and dairy processed product 有权
标题翻译：生产高档奶油乳制品和乳制品加工产品的方法
公开(公告)号：US07713563B2
公开(公告)日：2010-05-11
申请号：US10538298
申请日：2003-12-10
申请人： Yasushi Kubota , Yukinari Takeuchi , Satoshi Hayashi , Naoki Orii , Tadashi Nakatsubo
发明人： Yasushi Kubota , Yukinari Takeuchi , Satoshi Hayashi , Naoki Orii , Tadashi Nakatsubo
IPC分类号： A23C9/00
CPC分类号： A23C9/1524 , A23C3/03 , A23C17/00 , A23C2240/20
摘要： A process for preparing butter milk and/or butter serum, which comprises decreasing the dissolved oxygen concentration of at least one selected from the group consisting of milk, a milk product, butter milk and butter serum, followed by heating, and optionally fractionizing the heated product.
摘要翻译：一种制备奶油和/或黄油血清的方法，其包括降低选自牛奶，奶制品，奶油和黄油血清中的至少一种的溶解氧浓度，然后加热，并且任选地将加热的产品。

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