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71. 发明授权

US08283666B2 Thin film transistor array substrate and method of fabricating the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08283666B2
公开(公告)日：2012-10-09
申请号：US12500506
申请日：2009-07-09
申请人： Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
发明人： Do-Hyun Kim , Je-Hun Lee , Pil-Sang Yun , Dong-Hoon Lee , Bong-Kyun Kim
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
摘要翻译：提供具有高电荷迁移率并且可以提高阈值电压的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括：绝缘基板; 形成在所述绝缘基板上的栅电极; 氧化物半导体层，其包括形成在所述栅电极上的低氧化物层和形成在所述低氧化物层上的上氧化物层，使得所述上氧化物层的氧浓度高于所述低氧化物层的氧浓度; 以及形成在氧化物半导体层上并且彼此分离的源电极和漏电极。

72. 发明申请

US20120205651A1 LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20120205651A1
公开(公告)日：2012-08-16
申请号：US13452287
申请日：2012-04-20
申请人： Je-Hun Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Do-Hyun Kim
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , G02F1/136286 , G02F1/1368 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.
摘要翻译：提供一种液晶显示器及其制造方法。液晶显示器包括绝缘基板，形成在绝缘基板上的栅电极，形成在栅电极上的氧化物半导体层，形成在沟道区中的氧化物半导体层上的蚀刻停止层，形成在绝缘基板上的公共电极，源电极和漏电极在蚀刻停止器上彼此分离并延伸到氧化物半导体层的上部，形成在蚀刻停止器上的钝化层，公共电极，源极和漏极以及形成在其上的像素电极钝化层并连接到漏电极。

73. 发明授权

US08035102B2 Display substrate, method of manufacturing the same and display panel having the same 有权
标题翻译：显示基板，其制造方法以及具有该基板的显示面板
公开(公告)号：US08035102B2
公开(公告)日：2011-10-11
申请号：US11646832
申请日：2006-12-27
申请人： Je-Hun Lee , Young-Min Kim , Bo-Sung Kim , Jun-Young Lee , Sung-Wook Kang
发明人： Je-Hun Lee , Young-Min Kim , Bo-Sung Kim , Jun-Young Lee , Sung-Wook Kang
IPC分类号： H01L29/04
CPC分类号： H01L51/102 , G02F1/13439 , H01L27/283 , H01L51/0541 , H01L51/0545
摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.
摘要翻译：提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。还提供了相关的制造方法。在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。数据线在基座上并且朝向第一方向。栅极线在与第一方向交叉的第二方向上取向。有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。像素电极设置在像素中并电连接到有机薄膜晶体管。像素电极包括透明氧氮化物。

74. 发明申请

US20100135437A1 SIGNAL RECEIVING APPARATUS AND METHOD FOR WIRELESS COMMUNICATION SYSTEM USING MULTIPLE ANTENNAS 有权
标题翻译：使用多个天线的无线通信系统的信号接收装置和方法
公开(公告)号：US20100135437A1
公开(公告)日：2010-06-03
申请号：US12629454
申请日：2009-12-02
申请人： Il-Gu Lee , Jung-Bo Son , Je-Hun Lee , Eun-Young Choi , Sok-Kyu Lee
发明人： Il-Gu Lee , Jung-Bo Son , Je-Hun Lee , Eun-Young Choi , Sok-Kyu Lee
IPC分类号： H04L27/00 , H04L27/08 , H04B1/10
CPC分类号： H04B1/1036 , H04L25/03038 , H04L25/03305 , H04L27/2647 , H04L27/2655 , H04L27/2657 , H04L2025/03414 , H04L2025/0342 , H04L2025/03426
摘要： Provided are a receiving apparatus and method for a wireless communication system using multiple antennas. A receiving method for a wireless communication system using multiple paths, the receiving method comprising: receiving signals through a predetermined number of multiple paths; sensing a carrier according to saturation state degrees of the signals, and providing saturation state information; calculating automatic gain components of the received signals by using the received signals and the saturation state information of the received signals; and performing a noise matching process to amplify noises on the predetermined multiple paths according to the automatic gain components during a predetermined period.
摘要翻译：提供一种使用多个天线的无线通信系统的接收装置和方法。一种使用多个路径的无线通信系统的接收方法，所述接收方法包括：通过预定数量的多个路径接收信号; 根据信号的饱和状态度感测载波，并提供饱和状态信息; 通过使用接收信号和接收信号的饱和状态信息来计算接收信号的自动增益分量; 以及执行噪声匹配处理，以在预定周期内根据所述自动增益分量来放大所述预定多个路径上的噪声。

75. 发明授权

US08987742B2 Liquid crystal display and method of manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US08987742B2
公开(公告)日：2015-03-24
申请号：US13452287
申请日：2012-04-20
申请人： Je-Hun Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Do-Hyun Kim
IPC分类号： H01L33/08 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , G02F1/136286 , G02F1/1368 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.
摘要翻译：提供一种液晶显示器及其制造方法。液晶显示器包括绝缘基板，形成在绝缘基板上的栅电极，形成在栅电极上的氧化物半导体层，形成在沟道区中的氧化物半导体层上的蚀刻停止层，形成在绝缘基板上的公共电极，源电极和漏电极在蚀刻停止器上彼此分离并延伸到氧化物半导体层的上部，形成在蚀刻停止器上的钝化层，公共电极，源极和漏极以及形成在其上的像素电极钝化层并连接到漏电极。

76. 发明授权

US08796675B2 Thin film transistor array substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08796675B2
公开(公告)日：2014-08-05
申请号：US13613566
申请日：2012-09-13
申请人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L35/24
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在半导体氧化物层和栅电极。栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。

77. 发明授权

US08735890B2 Display substrate and method of manufacturing the display substrate 有权
标题翻译：显示基板和制造显示基板的方法
公开(公告)号：US08735890B2
公开(公告)日：2014-05-27
申请号：US13328658
申请日：2011-12-16
申请人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
发明人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/1288
摘要： In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.
摘要翻译：在显示基板和显示基板的制造方法中，显示基板包括数据线，通道图案，绝缘图案和像素电极。数据线沿着基底基板上的方向延伸。通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。通道图案与输入电极和输出电极上的输出电极接触。绝缘图案与基底基板上的沟道图案间隔开，并且包括暴露输出电极的接触孔。像素电极形成在绝缘图案上，以通过接触孔与输出电极接触。因此，可以使氧化物半导体层的损伤最小化，并且可以简化制造工艺。

78. 发明授权

US08383465B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08383465B2
公开(公告)日：2013-02-26
申请号：US13183711
申请日：2011-07-15
申请人： Je-Hun Lee , Do-Hyun Kim , Tae-Hyung Ihn
发明人： Je-Hun Lee , Do-Hyun Kim , Tae-Hyung Ihn
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
摘要翻译：在衬底上形成氧化物或氮化物半导体层。包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

79. 发明授权

US08164152B2 Liquid crystal display and method of manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US08164152B2
公开(公告)日：2012-04-24
申请号：US12509893
申请日：2009-07-27
申请人： Je-Hun Lee , Do-Hyun Kim
发明人： Je-Hun Lee , Do-Hyun Kim
IPC分类号： H01L31/00
CPC分类号： H01L27/1225 , G02F1/136286 , G02F1/1368 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.
摘要翻译：提供一种液晶显示器及其制造方法。液晶显示器包括绝缘基板，形成在绝缘基板上的栅电极，形成在栅电极上的氧化物半导体层，形成在沟道区中的氧化物半导体层上的蚀刻停止层，形成在绝缘基板上的公共电极，源电极和漏电极在蚀刻停止器上彼此分离并延伸到氧化物半导体层的上部，形成在蚀刻停止器上的钝化层，公共电极，源极和漏极以及形成在其上的像素电极钝化层并连接到漏电极。

80. 发明授权

US08067276B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08067276B2
公开(公告)日：2011-11-29
申请号：US12333831
申请日：2008-12-12
申请人： Je-Hun Lee , Do-Hyun Kim , Tae-Hyung Ihn
发明人： Je-Hun Lee , Do-Hyun Kim , Tae-Hyung Ihn
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
摘要翻译：在衬底上形成氧化物或氮化物半导体层。包括第一元件和第二元件的第一导电层和包括第二元件的第二导电层形成在半导体层上。第一元件通过热处理或激光照射在第一导电层和氧化物或氮化物半导体层之间的界面区域附近被氧化或氮化。第一元素的氧化物形成的吉布斯自由能低于第二元素或氧化物或氮化物半导体层中的任何元素的自由能。

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