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71. 发明授权

US06204102B1 Method of fabricating compound semiconductor devices using lift-off of insulating film 有权
标题翻译：使用绝缘膜剥离制造复合半导体器件的方法
公开(公告)号：US06204102B1
公开(公告)日：2001-03-20
申请号：US09207512
申请日：1998-12-09
申请人： Hyung Sup Yoon , Jin Hee Lee , Byung Sun Park , Chul Soon Park , Kwang Eui Pyun
发明人： Hyung Sup Yoon , Jin Hee Lee , Byung Sun Park , Chul Soon Park , Kwang Eui Pyun
IPC分类号： H01L21338
CPC分类号： B82Y10/00 , H01L21/28587 , H01L29/66469 , H01L29/66878
摘要： A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.
摘要翻译：一种形成化合物半导体器件的栅电极的方法包括：形成具有第一孔的第一绝缘膜图案，在第一绝缘膜图案上形成具有由反V型构成的第二孔的第二绝缘膜图案，形成T 通过在整个结构上沉积导电膜，去除第二绝缘膜图案，通过蚀刻第一绝缘膜图案在极侧壁上形成绝缘隔离物，并通过自发形成源极和漏极的欧姆电极，使用T型栅电极作为掩模的对准方法。因此，通过使用绝缘膜，可以防止诸如难熔金属的材料的T型栅极电极由于高退火而被稳定地形成。通过自对准方法形成的欧姆金属和栅电极可以通过在这些电极之间形成绝缘膜间隔来防止互连。

72. 外观设计

USD863581S1 Skin care beauty device 有权
公开(公告)号：USD863581S1
公开(公告)日：2019-10-15
申请号：US29664512
申请日：2018-09-26
申请人： Jin Hee Lee
设计人： Jin Hee Lee
摘要： FIG. 1 is a top and front perspective view of a skin care beauty device, showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.