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71. 发明授权

US07700498B2 Self-repair and enhancement of nanostructures by liquification under guiding conditions 有权
标题翻译：在引导条件下通过液化自我修复和增强纳米结构
公开(公告)号：US07700498B2
公开(公告)日：2010-04-20
申请号：US11915090
申请日：2006-05-29
申请人： Stephen Y. Chou , Qiangfei Xia
发明人： Stephen Y. Chou , Qiangfei Xia
IPC分类号： H01L21/477
CPC分类号： B81C1/00111 , B81C1/00634 , B81C2201/0149 , B82Y30/00 , H01L21/76892 , H01L21/76894 , Y10S977/888 , Y10S977/90
摘要： In accordance with the invention, the structure (10A, 10B) of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to solidify. Advantageous guiding conditions include adjacent spaced apart or contacting surfaces (12, 13A, 13B) to control surface structure and preserve verticality and unconstrained boundaries to permit smoothing of edge roughness. In an advantageous embodiment, a flat planar surface (12) is disposed overlying a patterned nanostructure surface (13A, 13B) and the surface (13A, 13B) is liquified by a high intensity light source to repair or enhance the nanoscale features.
摘要翻译：根据本发明，图案化的纳米尺寸或近似纳米级器件（“纳米结构”）的结构（10A，10B）通过在适当的引导条件存在一段时间内液化图案化器件来修复和/或增强，然后允许设备凝固。有利的引导条件包括相邻的间隔开的或接触的表面（12,13A，13B），以控制表面结构并保持垂直度和无约束边界以允许边缘粗糙度的平滑化。在有利的实施例中，平坦的平坦表面（12）设置在图案化的纳米结构表面（13A，13B）上方，并且表面（13A，13B）被高强度光源液化以修复或增强纳米尺度特征。

72. 发明申请

US20080217822A1 METHOD AND APPARATUS OF ELECTRICAL FIELD ASSISTED IMPRINTING 有权
标题翻译：电场辅助印刷的方法和装置
公开(公告)号：US20080217822A1
公开(公告)日：2008-09-11
申请号：US11933170
申请日：2007-10-31
申请人： Stephen Y. Chou , Xiaogan Liang
发明人： Stephen Y. Chou , Xiaogan Liang
IPC分类号： B29C35/08
CPC分类号： B29C43/021 , B29C43/003 , B29C43/36 , B29C2043/025 , B29C2043/3211 , B29C2043/3488 , B29C2043/568 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method and apparatus for performing nanoimprint lithography. When an electric field is applied between the mold and the substrate, various forces can be generated among molds, substrates, and resists. The electrostatic force between the mold and the substrate can serve as an imprinting pressure to press the structured mold into the conformable resist. In addition, the electric field induces additional wetting forces (electrowetting or dielectrophoresis) in a liquid resist, which can assist the flow and filling of the liquid resist into fine structures.
摘要翻译：一种用于进行纳米压印光刻的方法和装置。当在模具和基板之间施加电场时，可以在模具，基板和抗蚀剂之间产生各种力。模具和基板之间的静电力可以用作将结构化模具压入适形抗蚀剂的压印压力。此外，电场在液体抗蚀剂中引起额外的润湿力（电润湿或介电电泳），这可以帮助将液体抗蚀剂流动和填充到精细结构中。

73. 发明授权

US07137803B2 Fluid pressure imprint lithography 有权
公开(公告)号：US07137803B2
公开(公告)日：2006-11-21
申请号：US10140140
申请日：2002-05-07
申请人： Stephen Y. Chou
发明人： Stephen Y. Chou
IPC分类号： A01J21/00
CPC分类号： B29C43/021 , B29C43/003 , B29C59/022 , B29C2043/025 , B29C2043/3233 , B29C2043/3238 , B29C2043/566 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L51/0004 , Y10S438/945
摘要： An improved method of imprint lithography involves using direct fluid pressure to press the mold into a substrate-supported film. Advantageously the mold and/or substrate are sufficiently flexible to provide wide area contact under the fluid pressure. Fluid pressing can be accomplished by sealing the mold against the film and disposing the resulting assembly in a pressurized chamber. It can also be accomplished by subjecting the mold to jets of pressurized fluid. The result of this fluid pressing is enhanced resolution and high uniformity over an enlarged area.

74. 发明授权

US06828244B2 Method and apparatus for high density nanostructures 有权
公开(公告)号：US06828244B2
公开(公告)日：2004-12-07
申请号：US10301475
申请日：2002-11-21
申请人： Stephen Y. Chou
发明人： Stephen Y. Chou
IPC分类号： H01L21302
CPC分类号： B29C33/60 , B29C43/021 , B29C43/222 , B29C59/022 , B29C59/026 , B29C2043/023 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7053 , G11B5/855 , Y10S977/887
摘要： A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2 topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS has been fabricated using nanoimprint lithography. The reading and wearing of such Nano-CDS have been studied using scanning proximal probe methods. Using a tapping mode, a Nano-CD was read 1000 times without any detectable degradation of the disk or the silicon probe tip. In accelerated wear tests with a contact mode, the damage threshold was found to be 19 &mgr;N. This indicates that in a tapping mode, both the Nano-CD and silicon probe tip should have a lifetime that is at least four orders of magnitude longer than that at the damage threshold.

75. 发明授权

US6069380A Single-electron floating-gate MOS memory 失效
标题翻译：单电子浮栅MOS存储器
公开(公告)号：US6069380A
公开(公告)日：2000-05-30
申请号：US900947
申请日：1997-07-25
申请人： Stephen Y. Chou , Lingjie Guo , Effendi Leobandung
发明人： Stephen Y. Chou , Lingjie Guo , Effendi Leobandung
IPC分类号： H01L29/788
CPC分类号： B82Y10/00 , H01L29/7888 , Y10S977/937
摘要： A Single Electron MOS Memory (SEMM), in which one bit of information is represented by storing only one electron, has been demonstrated at room temperature. The SEMM is a floating gate Metal-Oxide-Semiconductor (MOS) transistor in silicon with a channel width (about 10 nanometers) which is smaller than the Debye screening length of a single electron stored on the floating gate, and a nanoscale polysilicon dot (about 7 nanometers by 7 nanometers by 2 nanometers) as the floating gate which is positioned between the channel and the control gate. An electron stored on the floating gate can screen the entire channel from the potential on the control gate, and lead to: (i) a discrete shift in the threshold voltage; (ii) a staircase relation between the charging voltage and the shift; and (iii) a self-limiting charging process. The structure and fabrication of the SEMM is well adapted to the manufacture of ultra large-scale integrated circuits.
摘要翻译：已经在室温下证明了单电子MOS存储器（SEMM），其中一位信息仅通过仅存储一个电子来表示。 SEMM是硅中的浮栅金属氧化物半导体（MOS）晶体管，其通道宽度（约10纳米）小于存储在浮置栅极上的单个电子的德拜屏蔽长度，以及纳米级多晶硅点（约7纳米×7纳米×2纳米）作为位于通道和控制门之间的浮动栅极。存储在浮置栅极上的电子可以从控制栅极上的电位屏蔽整个通道，并导致：（i）阈值电压的离散移位; （ii）充电电压与偏移之间的阶梯关系; 和（iii）自限制充电过程。 SEMM的结构和制造适应于超大规模集成电路的制造。

76. 发明授权

US5956216A Magnetic storage having discrete elements with quantized magnetic moments 失效
标题翻译：具有量子化磁矩的离散元件的磁存储器
公开(公告)号：US5956216A
公开(公告)日：1999-09-21
申请号：US762781
申请日：1996-12-10
申请人： Stephen Y. Chou
发明人： Stephen Y. Chou
IPC分类号： G11B5/00 , G11B5/09 , G11B5/74 , G11B5/80 , G11B5/82 , G11B5/855 , G11B23/00
CPC分类号： B82Y10/00 , G11B5/02 , G11B5/746 , G11B5/855 , G11B2005/0029 , G11B5/80 , G11B5/82
摘要： A magnetic storage includes a non-magnetic substrate. A plurality of discrete single magnetic domain elements formed of a magnetic material separated by nonmagnetic materials are carried on the non-magnetic substrate. Each single magnetic domain element has the same size, shape and has, without an external magnetic field, two quantized magnetization values. The two magnetization values are of substantially equal magnitude but of differing vector directions. The plurality of single domain elements are adapted for magnetic storage of information based upon direction of the magnetization vector. Each single magnetic domain element is used to store a bit of binary information. Writing each bit becomes to flip the quantified magnetic moment directions. Each bit can be tracked individually. The switching field of each bit can be controlled by controlling the size and shape anisotropy of each bit. Methods of fabricating the magnetic storage medium include obtaining the non-magnetic substrate and forming the plurality of single magnetic domain elements on the substrate.
摘要翻译：磁存储器包括非磁性衬底。由非磁性材料分离的磁性材料形成的多个离散的单磁畴元件被承载在非磁性衬底上。每个单个磁畴元件具有相同的尺寸，形状，并且在没有外部磁场的情况下具有两个量化的磁化值。两个磁化值的幅度基本相等但是矢量方向不同。多个单域元件适于基于磁化矢量的方向来磁存储信息。每个单个磁畴元件用于存储一位二进制信息。写入每一位将会翻转量化的磁矩方向。每个位可以单独跟踪。可以通过控制每个位的大小和形状各向异性来控制每个位的切换场。制造磁性存储介质的方法包括获得非磁性衬底并在衬底上形成多个单个磁畴元件。

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