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71. 发明申请

US20120153364A1 OXIDE MATERIAL AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物材料和半导体器件
公开(公告)号：US20120153364A1
公开(公告)日：2012-06-21
申请号：US13325700
申请日：2011-12-14
申请人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
发明人： Shunpei YAMAZAKI , Motoki NAKASHIMA , Tatsuya HONDA
IPC分类号： H01L29/78 , H01B1/00 , C01B13/00
CPC分类号： H01L29/7869 , C01G19/006 , C01P2002/72 , H01L29/04 , H01L29/045 , H01L29/26 , H01L29/78696
摘要： An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
摘要翻译：目的是提供适用于晶体管，二极管等中所包含的半导体的材料。另一个目的是提供一种包括晶体管的半导体器件，其中与氧化物半导体膜接触的氧化物半导体膜和栅极绝缘膜之间的界面处的电子态的条件是有利的。此外，另一个目的是通过给氧化半导体膜用于沟道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。使用包括具有c轴对准的晶体的氧化物材料形成半导体器件，当从表面或界面的方向观察时，半导体器件具有三角形或六边形的原子排列，并围绕c轴旋转。

72. 发明申请

US20120139017A1 WIRELESS CHIP 有权
标题翻译：无线芯片
公开(公告)号：US20120139017A1
公开(公告)日：2012-06-07
申请号：US13371675
申请日：2012-02-13
申请人： Shunpei YAMAZAKI , Konami IZUMI
发明人： Shunpei YAMAZAKI , Konami IZUMI
IPC分类号： H01L29/78 , H01L23/532
CPC分类号： G06K19/07775 , G06K19/04 , G06K19/07749 , H01L27/1214 , H01L27/1266 , H01Q1/38
摘要： The invention provides a wireless chip which can secure the safety of consumers while being small in size, favorable in communication property, and inexpensive, and the invention also provides an application thereof. Further, the invention provides a wireless chip which can be recycled after being used for managing the manufacture, circulation, and retail. A wireless chip includes a layer including a semiconductor element, and an antenna. The antenna includes a first conductive layer, a second conductive layer, and a dielectric layer sandwiched between the first conductive layer and the second conductive layer, and has a spherical shape, an ovoid shape, an oval spherical shape like a go stone, an oval spherical shape like a rugby ball, or a disc shape, or has a cylindrical shape or a polygonal prism shape in which an outer edge portion thereof has a curved surface.
摘要翻译：本发明提供了一种能够确保消费者安全的无线芯片，同时体积小，通信性好，价格低廉，本发明还提供了一种应用。此外，本发明提供一种无线芯片，其可以在用于管理制造，流通和零售之后被再循环。无线芯片包括包括半导体元件的层和天线。天线包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的电介质层，并且具有球形，卵形，像石头的椭圆形，椭圆形球形，如橄榄球，或圆盘状，或具有其外缘部分具有弯曲表面的圆柱形或多棱柱形状。

73. 发明申请

US20120138922A1 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：氧化物半导体膜和半导体器件
公开(公告)号：US20120138922A1
公开(公告)日：2012-06-07
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Masashi TSUBUKU , Kengo AKIMOTO , Hiroki OHARA , Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA , Masahiro TAKAHASHI , Akiharu MIYANAGA
IPC分类号： H01L29/12
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

74. 发明申请

US20120132919A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120132919A1
公开(公告)日：2012-05-31
申请号：US13366933
申请日：2012-02-06
申请人： Masayuki SAKAKURA , Shunpei YAMAZAKI
发明人： Masayuki SAKAKURA , Shunpei YAMAZAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/78645 , H01L27/12 , H01L27/124 , H01L27/283 , H01L29/42384 , H01L29/78696
摘要： It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.
摘要翻译：本发明的目的是提供一种具有新的多重结构的晶体管，其中提高了操作特性和可靠性。在具有多重结构的晶体管中，其包括彼此电连接的两个栅电极和包括在源区和漏区之间串联连接的两个沟道区的半导体层，并且在两者之间形成高浓度杂质区渠道区域; 与源极区域相邻的沟道区域的沟道长度比与漏极区域相邻的沟道区域的沟道长度长。

75. 发明申请

US20120113058A1 INFORMATION DEVICE 有权
标题翻译：信息设备
公开(公告)号：US20120113058A1
公开(公告)日：2012-05-10
申请号：US13348707
申请日：2012-01-12
申请人： Shunpei YAMAZAKI , Jun KOYAMA
发明人： Shunpei YAMAZAKI , Jun KOYAMA
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G06F3/03545 , H01L27/14609 , H01L27/14643 , H01L27/14678 , H01L27/288 , H01L27/307 , H01L27/3227 , H01L27/323 , H01L27/3234 , H01L27/3244 , H04N1/00347 , H04N1/00392 , H04N1/024 , H04N1/02445 , H04N1/02472 , H04N1/02805 , H04N2201/0081 , H04N2201/0089
摘要： Problems exist in areas such as image visibility, endurance of the device, precision, miniaturization, and electric power consumption in an information device having a conventional resistive film method or optical method pen input function. Both EL elements and photoelectric conversion elements are arranged in each pixel of a display device in an information device of the present invention having a pen input function. Information input is performed by the input of light to the photoelectric conversion elements in accordance with a pen that reflects light by a pen tip. An information device with a pen input function, capable of displaying a clear image without loss of brightness in the displayed image, having superior endurance, capable of being miniaturized, and having good precision can thus be obtained.
摘要翻译：在具有传统的电阻膜方法或光学方法笔输入功能的信息装置中存在诸如图像可视性，装置的耐久性，精度，小型化和电力消耗等方面的问题。 EL元件和光电转换元件都布置在具有笔输入功能的本发明的信息装置中的显示装置的每个像素中。通过根据用笔尖反射光的笔将光输入到光电转换元件来执行信息输入。因此，可以获得具有笔输入功能的信息装置，能够在显示图像中显示清晰的图像而不损失亮度，具有优异的耐久性，能够小型化并且具有良好的精度。

76. 发明申请

US20120098086A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译： SOI衬底和制造SOI衬底的方法
公开(公告)号：US20120098086A1
公开(公告)日：2012-04-26
申请号：US13339427
申请日：2011-12-29
申请人： Shunpei YAMAZAKI , Maki TOGAWA , Yasuyuki ARAI
发明人： Shunpei YAMAZAKI , Maki TOGAWA , Yasuyuki ARAI
IPC分类号： H01L21/762 , H01L29/12
CPC分类号： H01L21/76254 , H01L21/84 , H01L2924/0002 , H01L2924/00
摘要： An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.
摘要翻译：提供SOI衬底和SOI衬底的制造方法，通过其可以扩大衬底并提高其生产率。一种切割第一单晶硅衬底以形成具有芯片尺寸的第二单晶硅衬底的步骤（A）; 在所述第二单晶硅衬底的一个表面上形成绝缘层并在所述第二单晶衬底中形成脆化层的步骤（B）; 以及将具有绝缘表面的衬底和所述第二单晶硅衬底之间的绝缘层接合在其间的步骤（C），并且进行热处理以沿着所述脆化层分离所述第二单晶硅衬底，并且形成单晶硅进行具有绝缘面的基板上的薄膜。

77. 发明申请

US20120087134A1 LIGHTING DEVICE 有权
标题翻译：照明设备
公开(公告)号：US20120087134A1
公开(公告)日：2012-04-12
申请号：US13242674
申请日：2011-09-23
申请人： Takuya KAWATA , Yutaka UCHIDA , Shunpei YAMAZAKI
发明人： Takuya KAWATA , Yutaka UCHIDA , Shunpei YAMAZAKI
IPC分类号： F21V5/00
CPC分类号： H05B33/0803 , F21K9/23 , F21L4/005 , F21S8/033 , F21S8/04 , F21V5/004 , F21W2131/103 , F21Y2105/00 , F21Y2115/10 , F21Y2115/20
摘要： One object is to reduce the weight of a lighting device including an electroluminescent material. An object is to achieve high reliability of a lighting device including an electroluminescent material. In a lighting device including a light-emitting element having an electroluminescence (EL) layer, a housing formed using an organic resin whose refractive index is greater than or equal to that of the EL layer is provided to cover a light emission surface and a top surface of the light-emitting element. In addition, an inorganic insulating film covering an inner wall of the housing provided with the light-emitting element and the top surface of the light-emitting element is preferably provided.
摘要翻译：一个目的是减轻包括电致发光材料的照明装置的重量。目的在于实现包括电致发光材料的照明装置的高可靠性。在包括具有电致发光（EL）层的发光元件的照明装置中，使用折射率大于或等于EL层的有机树脂形成的壳体设置为覆盖发光面和顶部发光元件的表面。此外，优选设置覆盖设置有发光元件的壳体的内壁和发光元件的顶面的无机绝缘膜。

78. 发明申请

US20120086042A1 Light Emitting Device and Method of Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120086042A1
公开(公告)日：2012-04-12
申请号：US13234416
申请日：2011-09-16
申请人： Shunpei YAMAZAKI , Satoshi SEO , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Satoshi SEO , Hideaki KUWABARA
IPC分类号： H01L33/62
CPC分类号： H01L27/3206 , H01L27/322 , H01L27/3246 , H01L27/3276 , H01L51/5209 , H01L51/5218 , H01L51/5221 , H01L51/5228 , H01L51/5234 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
摘要翻译：提供了一种构造为增加沿一定方向取出的光量的发光器件以及制造该发光器件的方法。作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且第一电极的层（18b）暴露在用作发光区域的区域中。从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。

79. 发明申请

US20120085968A1 ELECTRODE MATERIAL AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE 有权
标题翻译：电极材料及制造蓄电装置的方法
公开(公告)号：US20120085968A1
公开(公告)日：2012-04-12
申请号：US13251373
申请日：2011-10-03
申请人： Takahiro KAWAKAMI , Shunpei YAMAZAKI
发明人： Takahiro KAWAKAMI , Shunpei YAMAZAKI
IPC分类号： H01M4/58
CPC分类号： H01M4/5825 , C01B25/37 , C01B25/45 , H01M4/136 , H01M4/366 , H01M4/38 , H01M2220/20 , H01M2220/30 , Y10T29/49108
摘要： To provide a power storage device including an electrode material having a large capacity. First heat treatment is performed on a mixture of a compound containing lithium; a compound containing a metal element selected from manganese, iron, cobalt, and nickel; and a compound containing phosphorus. A cleaning step is performed on the mixture subjected to the first heat treatment. Second heat treatment is performed on the mixture subjected to the cleaning step, so that a lithium phosphate compound is produced. With the use of the lithium phosphate compound, an electrode is formed.
摘要翻译：提供一种具有大容量的电极材料的蓄电装置。对含锂化合物的混合物进行第一次热处理; 含有选自锰，铁，钴和镍的金属元素的化合物; 和含磷化合物。对进行了第一次热处理的混合物进行清洗工序。对经过清洗工序的混合物进行二次热处理，制作磷酸锂化合物。通过使用磷酸锂化合物，形成电极。

80. 发明申请

US20120064650A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和液晶显示器件的制造方法
公开(公告)号：US20120064650A1
公开(公告)日：2012-03-15
申请号：US13226822
申请日：2011-09-07
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Hiroyuki MIYAKE
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Hiroyuki MIYAKE
IPC分类号： H01L21/336
CPC分类号： H01L27/1225 , G02F1/13394 , G02F1/13458 , G02F1/136227 , H01L27/1248 , H01L29/41733
摘要： Etching of a semiconductor layer including a part over a gate wiring and formation of a contact hole for connection between a pixel electrode and a drain electrode are performed by one-time photolithography step and one-time etching step; thus, the number of photolithography steps is reduced. The exposed part of the gate wiring is covered by an insulating layer, and this insulating layer also functions as a spacer for maintaining a space for a liquid crystal layer. By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at lower cost and higher productivity. Using an oxide semiconductor for the semiconductor layer can realize a liquid crystal display device with low power consumption and high reliability.
摘要翻译：通过一次光刻步骤和一次蚀刻步骤进行包括栅极布线上的部分的半导体层的蚀刻和用于像素电极和漏极之间的连接的接触孔的形成; 因此，光刻步骤的数量减少。栅极布线的暴露部分被绝缘层覆盖，并且该绝缘层还用作用于保持液晶层的空间的间隔物。通过减少光刻步骤的数量，可以以更低的成本和更高的生产率提供液晶显示装置。使用半导体层的氧化物半导体可以实现低功耗，高可靠性的液晶显示装置。

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