专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US5831387A Image forming apparatus and a method for manufacturing the same 失效
公开(公告)号：US5831387A
公开(公告)日：1998-11-03
申请号：US578959
申请日：1995-12-27
申请人： Tetsuya Kaneko , Mitsutoshi Hasegawa , Yoshihiro Yanagisawa , Miki Tamura , Kazuhiro Sando , Noriaki Ohguri , Toru Sugeno , Osamu Takamatsu
发明人： Tetsuya Kaneko , Mitsutoshi Hasegawa , Yoshihiro Yanagisawa , Miki Tamura , Kazuhiro Sando , Noriaki Ohguri , Toru Sugeno , Osamu Takamatsu
IPC分类号： H01J1/316 , H01J9/02 , H01J29/92 , H01J31/12 , H01J19/24 , H01J1/00
CPC分类号： B82Y10/00 , H01J1/316 , H01J29/92 , H01J31/127 , H01J9/027 , H01J2201/3165 , H01J2329/00
摘要： An image forming apparatus, according to the present invention, comprises a first substrate whereon are provided a functional element and electric wiring that is connected to the functional element, and a second substrate whereon is an area where an image is to be formed, and wherein, with the first substrate and the second substrate being located opposite to each other, space between the first substrate and the second substrate is kept in a pressure-reduced state so as to form an image in the area on the second substrate, and wherein the electric wiring is formed of a laminated conductive material by a process that plates a printed pattern, which is initially deposited by a printing process.

72. 发明授权

US5686326A Method of making thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5686326A
公开(公告)日：1997-11-11
申请号：US473989
申请日：1995-06-07
申请人： Nobuko Kitahara , Tetsuya Kaneko , Takashi Enomoto
发明人： Nobuko Kitahara , Tetsuya Kaneko , Takashi Enomoto
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/265
CPC分类号： H01L29/786 , H01L27/124 , H01L29/66765 , H01L29/78606 , G02F1/1368
摘要： A thin film transistor comprises a gate electrode, an insulating layer and a semiconductor layer formed and laminated on an insulating substrate, said insulating layer and said semiconductor layer having the same planar pattern.
摘要翻译：薄膜晶体管包括形成并层叠在绝缘基板上的栅电极，绝缘层和半导体层，所述绝缘层和所述半导体层具有相同的平面图案。

73. 发明授权

US5598611A Clip and clip structure 失效
标题翻译：剪辑和剪辑结构
公开(公告)号：US5598611A
公开(公告)日：1997-02-04
申请号：US539790
申请日：1995-10-05
申请人： Atsushi Yamada , Tetsuya Kaneko
发明人： Atsushi Yamada , Tetsuya Kaneko
IPC分类号： F16B5/06 , F16B21/08 , H05K5/02 , A44B11/25
CPC分类号： F16B21/088 , H05K5/0204 , Y10T24/206 , Y10T24/307 , Y10T24/44316 , Y10T24/44513 , Y10T24/44752 , Y10T24/45099
摘要： A clip includes a resilient tongue at one end thereof, a resilient engaging portion at another end thereof, an engaging portion formed on the resilient tongue for engagement with a support member of an attachment article, and a stop member provided on the support member to suppress flexing by the resilient engaging portion when the engaging portion of the resilient tongue is in engagement with the support member. The engaging portion is in contact with the stop member when the engaging portion of the resilient tongue is in engagement with the support member. Flexing of the resilient engaging portion is enabled by releasing the engagement of the engaging portion of the resilient tongue and moving the clip.
摘要翻译：夹子的一端包括弹性舌片，在其另一端处具有弹性接合部分，形成在弹性舌片上的接合部分，用于与附接物品的支撑构件接合，以及设置在支撑构件上的止动构件，以抑制当弹性舌片的接合部分与支撑构件接合时，弹性接合部分弯曲。当弹性舌片的接合部分与支撑构件接合时，接合部分与止动构件接触。通过释放弹性舌片的接合部分和移动夹子的接合，可实现弹性接合部分的弯曲。

74. 发明授权

US5592421A Semiconductor integrated circuit for generating an internal power source voltage with reduced potential changes 失效
标题翻译：用于产生具有降低的电位变化的内部电源电压的半导体集成电路
公开(公告)号：US5592421A
公开(公告)日：1997-01-07
申请号：US393077
申请日：1995-02-23
申请人： Tetsuya Kaneko , Takashi Ohsawa
发明人： Tetsuya Kaneko , Takashi Ohsawa
IPC分类号： G11C11/407 , G11C5/14 , G11C8/08 , G11C11/4074 , G11C11/409 , H01L21/8242 , H01L27/10 , H01L27/108 , G11C13/00
CPC分类号： G11C5/147 , G11C11/4074 , G11C8/08
摘要： A semiconductor integrated circuit device is provided that can restrict changes in the internal power source potential when an externally applied power source potential changes. The semiconductor integrated circuit device comprises an integrated circuit section, a voltage regulator for limiting an externally applied potential which causes changes in potential levels to a certain potential level to obtain a regulated potential, and a boost circuit driven by the regulated potential as a power source, for boosting the regulated potential to a boosted potential used as a operating power source for the integrated circuit section. The boost circuit is driven by the regulated potential limited to a certain potential level. Even when the level of the potential VCC changes, operation of the boost circuit does not substantially change. Due to the structure in which the boosted potential is generated from the regulated potential, the constant potential range of the boosted potential is enlarged so that operating margins of the device are enlarged.
摘要翻译：提供了一种半导体集成电路器件，其可以在外部施加的电源电位变化时限制内部电源电位的变化。半导体集成电路器件包括集成电路部分，用于限制外部施加的电位的电压调节器，其将电位电平的变化导致一定的电位以获得调节电位，以及由调节电位驱动的升压电路作为电源，用于将调节电位升高到用作集成电路部分的工作电源的升压电位。升压电路由限制在一定电位电平的调节电位驱动。即使当电位VCC的电平变化时，升压电路的操作也实质上不会改变。由于从调节电位产生升压电位的结构，增大了电位的恒定电位范围，从而扩大了器件的工作裕度。

75. 发明授权

US5587958A Semiconductor memory device including a boost potential generation circuit 失效
标题翻译：包括升压电位产生电路的半导体存储器件
公开(公告)号：US5587958A
公开(公告)日：1996-12-24
申请号：US363825
申请日：1994-12-27
申请人： Tetsuya Kaneko , Takashi Ohsawa
发明人： Tetsuya Kaneko , Takashi Ohsawa
IPC分类号： G11C11/413 , G11C5/14 , G11C11/406 , G11C11/407 , G11C11/408 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/10 , H01L27/108 , G11C8/00
CPC分类号： G11C11/4085 , G11C5/145
摘要： A semiconductor integrated circuit device includes a boost potential generation circuit, word line drive system circuit, refresh cycle select circuit, word line system boost potential generation circuit and boost potential generation system control circuit. The boost potential generation circuit steadily generates a higher boost potential than an externally applied voltage. The word line drive system circuit delivers the boost potential, as a power supply, from the boost potential generation circuit so as to drive the corresponding word line. The word line system boost potential control circuit sets at a substantially constant level a boost potential output from the boost potential generation circuit. The boost potential generation system control circuit receives a designation signal from the refresh cycle select circuit so as to designate a refresh cycle and supplies a control signal, which is generated based on the designation signal, to the boost potential generation circuit, whereby, when more word lines are driven at a time by the word line system drive circuit, a current supply capability of the boost potential generation circuit is increased and, when less word lines are driven at a time, the current supply capability of the boost potential generation circuit is decreased.
摘要翻译：半导体集成电路器件包括升压电位产生电路，字线驱动系统电路，刷新周期选择电路，字线系统升压电位产生电路和升压电位发生系统控制电路。升压电位发生电路稳定地产生比外部施加的电压更高的升压电位。字线驱动系统电路从升压电位产生电路提供升压电位作为电源，以驱动相应的字线。字线系统升压电位控制电路将从升压电位产生电路输出的升压电位设定为基本恒定的电平。升压电位生成系统控制电路从刷新周期选择电路接收指定信号，以指定刷新周期，并将基于指定信号生成的控制信号提供给升压电位产生电路，从而当更多字线由字线系驱动电路一次驱动，升压电位产生电路的电流供给能力增加，当一次驱动较少的字线时，升压电位产生电路的电流供给能力为减少。

76. 发明授权

US5578897A Multi-electron source, image-forming device using multi-electron source, and methods for preparing them 失效
公开(公告)号：US5578897A
公开(公告)日：1996-11-26
申请号：US404958
申请日：1995-03-16
申请人： Ichiro Nomura , Yoshikazu Banno , Tetsuya Kaneko , Toshihiko Takeda , Kumi Iwai
发明人： Ichiro Nomura , Yoshikazu Banno , Tetsuya Kaneko , Toshihiko Takeda , Kumi Iwai
IPC分类号： H01J1/316 , H01J1/00
CPC分类号： H01J1/316 , H01J2201/3165 , H01J2329/00
摘要： A multi-electron source has a plurality of electron emitting portions arranged on a substrate. Each electron emitting portion comprises a conductive film containing a crack with an average width of 0.05 .mu.m to 1 .mu.m. The electron emitting portions are prepared by subjecting conductive films, preferably of fine particles, to a pulse voltage application treatment.

77. 发明授权

US5532544A Electron-emitting device with electron-emitting region insulated from electrodes 失效
标题翻译：具有与电极绝缘的电子发射区的电子发射器件
公开(公告)号：US5532544A
公开(公告)日：1996-07-02
申请号：US366430
申请日：1994-12-30
申请人： Seishiro Yoshioka , Ichiro Nomura , Hidetoshi Suzuki , Toshihiko Takeda , Tetsuya Kaneko , Yoshikazu Banno , Kojiro Yokono
发明人： Seishiro Yoshioka , Ichiro Nomura , Hidetoshi Suzuki , Toshihiko Takeda , Tetsuya Kaneko , Yoshikazu Banno , Kojiro Yokono
IPC分类号： H01J1/316 , H01J9/02 , H04N3/14
CPC分类号： H01J1/316 , H01J9/027 , H01J2329/00
摘要： An electron-emitting device is provided which is a laminate including a semiconductor layer with fine particles formed between a pair of opposing electrodes an electron-emitting region insulated from the electrodes is formed at a side end surface of the insulating layer formed at the part at which the electrodes oppose each other, and electrons are emitted from the electron-emitting region by applying a voltage between the electrodes.
摘要翻译：提供了一种电子发射器件，它是一种层压体，它包括在一对相对电极之间形成有细颗粒的半导体层，在形成在绝缘层的部分处的绝缘层的侧端表面上形成有与电极绝缘的电子发射区域电极彼此相对，并且通过在电极之间施加电压从电子发射区发射电子。

78. 发明授权

US5447449A Pressure connection type connector 失效
标题翻译：压力连接型连接器
公开(公告)号：US5447449A
公开(公告)日：1995-09-05
申请号：US207020
申请日：1994-03-07
申请人： Tetsuya Kaneko
发明人： Tetsuya Kaneko
IPC分类号： H01R4/24
CPC分类号： H01R12/675
摘要： A pressure connection type connector includes a pressure connection type contact comprising first and second pressure connection type terminals arranged in parallel and spaced apart from one another in an axial direction of a cable conductor in a coated cable, and a third pressure connection type terminal located intermediately between the first and second terminals but displaced therefrom in a direction radially of the cable conductor. The coated cable is pressed against the pressure connection type contact by a pressing member so that the coating of the coated cable is pierced through and broken by tips of the first to third terminals, and the conductor of the coated cable is pressed in between the first and third terminals and between the second and third terminals. The tips of the first to third terminals are then inserted into a receiving hole of the pressing member. The wall of the receiving hole includes first and second inclined surface elements. The first inclined surface element is adapted to press the tips of the first to third terminals radially of the cable conductor to thereby cause contracting and closing of the first to third terminals, and the second inclined surface element is adapted to press the tips of the first and second terminals axially of the cable conductor to thereby cause contract and closing of the first and second terminals.
摘要翻译：压力连接型连接器包括：压力连接型接头，包括第一和第二压力连接型端子，第一和第二压力连接型端子在涂覆电缆中的电缆导体的轴向上彼此平行布置并彼此间隔开;以及第三压力连接型端子，在第一和第二端子之间，但是在电缆导体的径向方向上从第一端子和第二端子之间移位。涂覆的电缆通过按压构件压靠压力连接型接触，使得涂覆电缆的涂层被第一至第三端子的尖端穿透并断开，并且涂覆的电缆的导体被压在第一和第三端子之间以及第二和第三端子之间。然后将第一至第三端子的尖端插入按压构件的接收孔中。接收孔的壁包括第一和第二倾斜表面元件。第一倾斜表面元件适于将电缆导体的第一至第三端子的末端压缩，从而导致第一至第三端子的收缩和闭合，并且第二倾斜表面元件适于按压第一至第三端子的尖端和电缆导体轴向的第二端子，从而导致第一和第二端子的收缩。

79. 发明授权

US5423120A Process for making press-in connection type contact 失效
标题翻译：冲压连接式接触的工艺
公开(公告)号：US5423120A
公开(公告)日：1995-06-13
申请号：US169988
申请日：1993-12-16
申请人： Tetsuya Kaneko
发明人： Tetsuya Kaneko
IPC分类号： H01R4/24 , H01R43/16
CPC分类号： H01R43/16 , Y10T29/49204 , Y10T29/49218 , Y10T29/49222
摘要： A press-in connection type contact, comprising a first press-in connection terminal, a second press-in connection terminal and a third press-in connection terminal, can be made by a process comprising the steps of splitting the first, second and third press-in connection terminals from one another by shear-cutting a plate member; bending the third press-in connection terminal in a first direction along an intermediate line between the first and second terminals; forming press contacting surfaces on corner portions of the first, second and third press-in terminals by swaging; and bending the third press-in terminals in a second opposite direction along the intermediate line between the first and second press-in terminals so that the press contacting surfaces are placed in an opposing relation. The terminals are thus arranged such that a conductor having a conductor cover can be pressed-in between the terminals of the contact, whereby pointed ends of terminals pierce the cover and the terminals create a pressure contact about the conductor.
摘要翻译：可以通过包括以下步骤的方法制造包括第一压入式连接端子，第二压入式连接端子和第三压入式连接端子的压入式连接型触头，该方法包括将第一，第二和第三通过剪切板构件将压入式连接端子彼此连接; 沿着第一和第二端子之间的中间线在第一方向上弯曲第三压入连接端子; 通过锻造在第一，第二和第三压入端的角部上形成压接面; 以及沿着第一和第二压入端子之间的中间线在第二相反方向上弯曲第三压入端子，使得压接面相对放置。因此，端子被布置成使得具有导体盖的导体可以被压入接触件的端子之间，由此端子的尖端刺穿盖，并且端子围绕导体产生压力接触。

80. 发明授权

US5176557A Electron emission element and method of manufacturing the same 失效
标题翻译：电子发射元件及其制造方法
公开(公告)号：US5176557A
公开(公告)日：1993-01-05
申请号：US746154
申请日：1991-08-14
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12
CPC分类号： H01J3/022 , H01J1/3042 , H01J31/127 , H01J9/025 , H01J2201/30446
摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.
摘要翻译：多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及导电电极，其一部分形成在至少相邻的部分附近，导电电极形成在绝缘层上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式