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71. 发明申请

US20070288569A1 METHODS AND APPARATUSES FOR RECORDING AND VIEWING A COLLABORATION SESSION 有权
标题翻译：记录和查看合作会议的方法和设备
公开(公告)号：US20070288569A1
公开(公告)日：2007-12-13
申请号：US11753169
申请日：2007-05-24
申请人： Zheng Yuan , David Knight , Rohit Deep
发明人： Zheng Yuan , David Knight , Rohit Deep
IPC分类号： G06F15/16
CPC分类号： H04L67/22 , H04L67/14 , H04L67/148
摘要： In one embodiment, the systems and methods attend a collaboration session; detect content shared during the collaboration session; automatically record the content and a time stamp corresponding to the content; and play at least a portion of the content during the collaboration session.
摘要翻译：在一个实施例中，系统和方法参与协作会话; 检测协作会话共享的内容; 自动记录与内容对应的内容和时间戳; 并在协作会话期间播放内容的至少一部分。

72. 发明授权

US07208425B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07208425B2
公开(公告)日：2007-04-24
申请号：US11367866
申请日：2006-03-03
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

73. 发明申请

US20070000897A1 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL 审中-公开
标题翻译：薄膜薄膜多层退化和改良胶圈
公开(公告)号：US20070000897A1
公开(公告)日：2007-01-04
申请号：US11423651
申请日：2006-06-12
申请人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
发明人： Nitin Ingle , Zheng Yuan , Vikash Banthia , Xinyun Xia , Hali Forstner , Rong Pan
IPC分类号： H01L21/324 , H05B3/00
CPC分类号： H01L21/324 , H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/31612 , H01L21/31662 , H01L21/67115 , H01L21/76224 , H01L21/76283
摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.
摘要翻译：一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底，含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

74. 发明授权

US07141483B2 Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill 有权
标题翻译： TEOS /臭氧CVD的一氧化二氮退火以改善间隙填料
公开(公告)号：US07141483B2
公开(公告)日：2006-11-28
申请号：US10757771
申请日：2004-01-14
申请人： Zheng Yuan , Reza Arghavani , Shankar Venkataraman
发明人： Zheng Yuan , Reza Arghavani , Shankar Venkataraman
IPC分类号： H01L21/76 , H01L21/31 , H01L21/469
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/45523 , C23C16/52 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02312 , H01L21/76224 , H01L21/76822 , H01L21/76828 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of filling a gap defined by adjacent raised features on a substrate includes providing a flow of a silicon-containing processing gas to a chamber housing the substrate and providing a flow of an oxidizing gas to the chamber. The method also includes depositing a first portion of a film as a substantially conformal layer in the gap by causing a reaction between the silicon-containing processing gas and the oxidizing gas. Depositing the conformal layer includes varying over time a ratio of the (silicon-containing processing gas):(oxidizing gas) and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the conformal layer. The method also includes depositing a second portion of the film as a bulk layer. Depositing a second portion of the film includes maintaining the ratio of the (silicon-containing processing gas):(oxidizing gas) substantially constant throughout deposition of the bulk layer and regulating the chamber to a pressure in a range from about 200 torr to about 760 torr throughout deposition of the bulk layer. The method also includes exposing the substrate to nitrous oxide at a temperature less than about 900° C. to anneal the deposited film.
摘要翻译：填充由衬底上的相邻凸起特征限定的间隙的方法包括提供含硅处理气体流到容纳衬底并且向腔室提供氧化气体流的腔室。该方法还包括通过引起含硅处理气体和氧化气体之间的反应，将膜的第一部分沉积在间隙中作为基本上共形的层。沉积保形层包括随着时间的推移，在沉积共形层的过程中，（含硅处理气体）:(氧化气体）的比例和室的调节范围为约200托至约760托的压力。该方法还包括将膜的第二部分沉积为本体层。沉积薄膜的第二部分包括在沉积主体层期间保持（含硅处理气体）:(氧化气体）的比例基本上恒定，并将室调节到约200托至约760的范围内的压力托盘在整个堆积层的沉积中。该方法还包括在小于约900℃的温度下将衬底暴露于一氧化二氮以使沉积的膜退火。

75. 发明申请

US20060264062A1 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 失效
公开(公告)号：US20060264062A1
公开(公告)日：2006-11-23
申请号：US11493211
申请日：2006-07-25
申请人： Nitin Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

76. 发明授权

US07130883B2 Distributed network system architecture for collaborative computing 有权
公开(公告)号：US07130883B2
公开(公告)日：2006-10-31
申请号：US09751424
申请日：2000-12-29
申请人： Min Zhu , Jian Shen , Steven Li , Guanghong Yang , Bin Zhao , Shi Yan , Zheng Yuan
发明人： Min Zhu , Jian Shen , Steven Li , Guanghong Yang , Bin Zhao , Shi Yan , Zheng Yuan
IPC分类号： G06F13/00
CPC分类号： H04L12/1827 , H04L67/1095 , H04L69/329 , H04L69/40
摘要： A distributed collaborative computer system is provided that comprises a plurality of server computers interconnected via a high-speed link. Client computers can connect to any available server computer and start or join a conference hosted on either the server computer to which the client computer is connected or any other server in the system. As a result, the system and method of the present invention is easily scalable to support an arbitrary number of participants to a conference by merely adding the appropriate number of server computers to the system. In addition, by replicating the conference information on more than one server computer, the single point of failure limitation is eliminated. In fact, if a server hosting or participating in a conference malfunctions, the failure is detected by other server computers and the client computer is able to reconnect to the conference through a new server computer.

77. 发明授权

US07037859B2 Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
标题翻译：在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充
公开(公告)号：US07037859B2
公开(公告)日：2006-05-02
申请号：US10979471
申请日：2004-11-01
申请人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
发明人： Nitin K. Ingle , Xinyua Xia , Zheng Yuan
IPC分类号： H01L21/31
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/45512 , C23C16/52 , H01L21/02164 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76801 , Y10S438/958
摘要： Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要翻译：本发明的实施例提供了与氧化硅的化学气相沉积相关的方法，装置和装置。在一个实施例中，使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。在预沉积气体流动稳定阶段和初始沉积阶段期间，含硅气体：氧化剂沉积气体的比例相对较低，从而以相对较慢的速率形成高度保形的氧化硅。在沉积工艺步骤的过程中，含硅气体：氧化剂气体的比率增加，导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。

78. 发明授权

US06793733B2 Gas distribution showerhead 失效
标题翻译：燃气分配喷头
公开(公告)号：US06793733B2
公开(公告)日：2004-09-21
申请号：US10057280
申请日：2002-01-25
申请人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
发明人： Karthik Janakiraman , Nitin Ingle , Zheng Yuan , Steven Gianoulakis
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A gas distribution showerhead for use in a semiconductor fabrication process features a face plate having gas outlet ports in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.
摘要翻译：用于半导体制造工艺的气体分配喷头具有面板，该面板具有细长狭槽或通道形式的气体出口。根据本发明的实施例，使用细长的气体出口端口基本上减少了喷头与晶片紧密隔开的沉积材料的不期望的斑点和条纹的发生。还公开了一种具有锥形轮廓的面板的喷头，以在近距离的盘对晶片间隔处减小沉积材料的边缘厚度。

79. 发明授权

US06654032B1 Instant sharing of documents on a remote server 有权
标题翻译：在远程服务器上即时共享文档
公开(公告)号：US06654032B1
公开(公告)日：2003-11-25
申请号：US09471938
申请日：1999-12-23
申请人： Min Zhu , Guanghong Yang , Zheng Yuan , Song Xiang Wei
发明人： Min Zhu , Guanghong Yang , Zheng Yuan , Song Xiang Wei
IPC分类号： G09G500
CPC分类号： H04L65/4038 , G06F3/14 , G06Q10/10 , H04L12/1813 , H04L29/06027 , H04L67/42
摘要： An apparatus, method, and computer program for instant remote document sharing. In one embodiment, referred to as “remote document sharing,” a file on a remote server is converted to a “shared document” which is distributed to the members of a data conference for review. In another embodiment, referred to as “remote application viewing,” the “owner” of a document on a remote server shares the screens created by an application associated with the document. The other members of the data conference can view the screens, but cannot interact with the application. In another embodiment, referred to as “remote application sharing,” the “owner” of a document on a remote server shares the screens created by an application associated with the document. The other members of the data conference can view the screens and interact with the application.
摘要翻译：用于即时远程文档共享的装置，方法和计算机程序。在一个实施例中，称为“远程文档共享”，将远程服务器上的文件转换为“共享文档”，该共享文档被分发给数据会议的成员进行审查。在被称为“远程应用程序查看”的另一个实施例中，远程服务器上的文档的“所有者”共享由与文档相关联的应用程序创建的屏幕。数据会议的其他成员可以查看屏幕，但不能与应用程序交互。在另一个称为“远程应用程序共享”的实施例中，远程服务器上的文档的“所有者”共享由与该文档相关联的应用程序创建的屏幕。数据会议的其他成员可以查看屏幕并与应用程序进行交互。

80. 发明授权

US08578465B2 Token-based control of permitted sub-sessions for online collaborative computing sessions 有权
标题翻译：基于令牌的控制在线协作计算会话允许的子会话
公开(公告)号：US08578465B2
公开(公告)日：2013-11-05
申请号：US12506321
申请日：2009-07-21
申请人： Sihai Xiao , Zheng Yuan , David Knight
发明人： Sihai Xiao , Zheng Yuan , David Knight
IPC分类号： G06F21/00
CPC分类号： H04L67/141 , H04L63/0236 , H04L67/14
摘要： In one embodiment, a client device may send one or more sub-session requests to one or more corresponding session controllers through a computer network to obtain one or more corresponding sub-session tokens that indicate in which sub-sessions of an online collaborative computing session the client device is permitted to participate. The client device may then receive particular sub-session tokens (e.g., based on certain permissions), which may then be sent to a collaboration server to establish one or more permitted sub-sessions of the online collaborative computing session with the client device as indicated by the received sub-session tokens.
摘要翻译：在一个实施例中，客户机设备可以通过计算机网络向一个或多个对应的会话控制器发送一个或多个子会话请求，以获得指示在线协作计算会话的哪个子会话中的一个或多个相应的子会话令牌允许客户端设备参与。然后，客户端设备可以接收特定的子会话令牌（例如，基于某些许可），然后可以将其发送到协作服务器，以建立与所指示的客户端设备的在线协作计算会话的一个或多个允许的子会话由接收到的子会话令牌。

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