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71. 发明申请

US20100146774A1 Method and Apparatus for Lapping Magnetic Head Slider, and Manufacturing Method of Thin-Film Magnetic Head 有权
标题翻译：用于研磨磁头滑块的方法和装置，以及薄膜磁头的制造方法
公开(公告)号：US20100146774A1
公开(公告)日：2010-06-17
申请号：US12332581
申请日：2008-12-11
申请人： Naoki Ohta , Takeo Kagami
发明人： Naoki Ohta , Takeo Kagami
IPC分类号： G11B5/127 , B24B49/04 , B24B49/10 , H04R31/00
CPC分类号： B24B49/04 , B24B37/00 , B24B49/10 , G11B5/102 , G11B5/3166 , G11B5/3169 , G11B5/3173 , G11B5/3903 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method of lapping a magnetic head slider includes a step of lapping a lapping surface of a row bar provided with a plurality of MR read head elements arranged along at least one line, a step of obtaining at least one output signal from at least one of the plurality of MR read head elements of the row bar during lapping, the at least one output signal corresponding to element resistance, a step of detecting at least one peak value of the obtained at least one output signal, and a step of controlling an amount of lapping of the row bar depending upon the detected at least one peak value.
摘要翻译：一种研磨磁头滑动器的方法包括：研磨设置有沿着至少一条线布置的多个MR读取头元件的行杆的研磨表面的步骤，从至少一个方向获得至少一个输出信号的步骤在研磨期间行列的多个MR读取头元件，对应于元件电阻的至少一个输出信号，检测所获得的至少一个输出信号的至少一个峰值的步骤，以及控制量的步骤根据检测到的至少一个峰值来研磨行条。

72. 发明授权

US07715155B2 Thin-film magnetic head and manufacturing method thereof 有权
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US07715155B2
公开(公告)日：2010-05-11
申请号：US11734047
申请日：2007-04-11
申请人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
发明人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/398
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.
摘要翻译：薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流沿垂直于层压层表面的方向流动，形成为围绕MR多层结构的绝缘层，至少层叠在MR多层结构上的附加金属层，层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层，以及层叠在上部电极上的上部磁屏蔽层层。附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构，并且沿着MR多层结构的轨道宽度方向的长度大于无磁化层的MR效应多层结构。

73. 发明授权

US07548400B2 Thin-film magnetic head comprising bias layers having a large length in track width direction 失效
标题翻译：薄膜磁头包括在磁道宽度方向上具有大长度的偏置层
公开(公告)号：US07548400B2
公开(公告)日：2009-06-16
申请号：US11066763
申请日：2005-02-28
申请人： Takeo Kagami , Noriaki Kasahara , Kazuki Sato , Takayasu Kanaya
发明人： Takeo Kagami , Noriaki Kasahara , Kazuki Sato , Takayasu Kanaya
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3932 , G11B2005/0008
摘要： The thin-film magnetic head of the present invention comprises an MR sensor wherein a first ferromagnetic layer in which a magnetization direction is fixed with respect to external magnetic fields, a non-magnetic intermediate layer, and a second ferromagnetic layer in which a magnetization direction changes with respect to the external magnetic fields are stacked, and wherein a sense current flows substantially parallel to the stacked layer surface. The thin-film magnetic head comprises a pair of bias layers for exerting a bias magnetic field upon the MR sensor; the bias layers extending substantially symmetrically from two sides of the MR sensor in a direction of track width of a recording medium, each bias layer being connected with the MR sensor over a length which is substantially the same as the MR sensor in a direction perpendicular to the air bearing surface; and each bias layer having a shape which is contained within an imaginary rectangle which has its long sides along the air bearing surface in the direction of the track width of the recording medium and its short sides in the direction perpendicular to the air bearing surface and which contacts the short side of the imaginary rectangle which is opposite the short side which contacts the MR sensor. The thin-film magnetic head further comprises a pair of lead layers for supplying the sense current to the MR sensor each extending from the air bearing surface to cover at least a portion of each of the bias layers.
摘要翻译：本发明的薄膜磁头包括MR传感器，其中磁化方向相对于外部磁场固定的第一铁磁层，非磁性中间层和第二铁磁层，其中磁化方向相对于外部磁场的变化被堆叠，并且其中感测电流基本上平行于堆叠的层表面流动。薄膜磁头包括用于在MR传感器上施加偏置磁场的一对偏置层; 偏置层在MR传感器的两侧沿着记录介质的磁道宽度的方向基本上对称地延伸，每个偏置层在与MR传感器垂直的方向上与MR传感器基本相同的长度上与MR传感器连接空气轴承表面; 并且每个偏置层具有包含在假想矩形内的形状，该假想矩形具有沿着记录介质的轨道宽度的空气轴承表面的长边，并且在垂直于空气轴承表面的方向上具有短边，接触与MR传感器接触的短边相反的假想矩形的短边。薄膜磁头还包括一对引导层，用于向MR传感器提供感测电流，每个引导层从空气支承表面延伸以覆盖每个偏置层的至少一部分。

74. 发明授权

US07542245B2 Composite thin-film magnetic head with non-magnetic conductive layer to balance parasitic capacitances 有权
标题翻译：具有非磁性导电层的复合薄膜磁头，以平衡寄生电容
公开(公告)号：US07542245B2
公开(公告)日：2009-06-02
申请号：US11348487
申请日：2006-02-07
申请人： Takeo Kagami , Noriaki Kasahara , Tetsuya Kuwashima
发明人： Takeo Kagami , Noriaki Kasahara , Tetsuya Kuwashima
IPC分类号： G11B5/265 , G11B5/31 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： Composite thin-film magnetic head includes a substrate; a first insulation layer on the substrate; an MR read head element on the first insulation layer and provided with a lower shield layer, an upper shield layer and an MR layer with a sense current flowing perpendicular to a surface of the MR layer though the upper and lower shield layers; a second insulation layer on the MR read head element; an inductive write head element on the second insulation layer and provided with a lower magnetic pole layer, a recording gap layer, an upper magnetic pole layer with end portion opposed to an end portion of the lower magnetic pole layer through the recording gap layer and a write coil; and a nonmagnetic conductive layer electrically conducted with the lower shield layer and opposed to the substrate to increase the electrode area between the lower shield layer and the substrate.
摘要翻译：复合薄膜磁头包括基板; 衬底上的第一绝缘层; 在第一绝缘层上设置MR读头元件，并且具有下屏蔽层，上屏蔽层和MR层，感测电流通过上下屏蔽层垂直于MR层的表面流动; MR读取头元件上的第二绝缘层; 第二绝缘层上的感应式写入头元件，设置有下磁极层，记录间隙层，具有通过记录间隙层与下磁极层的端部相对的端部的上磁极层，以及写线圈以及与下屏蔽层电连接并与基板相对的非磁性导电层，以增加下屏蔽层和基板之间的电极面积。

75. 发明申请

US20070279801A1 Manufacturing method of magnetoresistive effect element, manufacturing method of thin-film magnetic head and thin-film magnetic head 有权
标题翻译：磁阻效应元件的制造方法，薄膜磁头和薄膜磁头的制造方法
公开(公告)号：US20070279801A1
公开(公告)日：2007-12-06
申请号：US11806224
申请日：2007-05-30
申请人： Naoki Ohta , Takeo Kagami
发明人： Naoki Ohta , Takeo Kagami
IPC分类号： G11B5/187
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/3967 , H01L43/08 , H01L43/12 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, a step of forming a mask on the cap layer of the MR multi-layered film, a step of patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, a step of forming a magnetic domain control bias layer by using a lift off method using the mask, a step of, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, a step of planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and a step of forming an upper electrode layer on the planarized top surface.
摘要翻译：电流在与层面垂直的方向上流动的MR元件的制造方法包括：在下部电极层上形成具有在顶部具有盖层的MR多层膜的步骤，形成掩模在MR多层膜的盖层上，通过铣削通过掩模形成MR多层膜以形成MR多层结构的步骤，通过使用电梯形成磁畴控制偏置层的步骤在形成磁畴控制偏压层之后，在盖层和磁畴控制偏置层的一部分上形成附加的盖层的步骤，平面化附加盖的顶表面的步骤层和磁畴控制偏置层，以及在平坦化的顶表面上形成上电极层的步骤。

76. 发明申请

US20070206334A1 Method of manufacturing magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus 有权
标题翻译：制造磁阻元件，磁头，磁头悬挂组件和磁盘装置的方法
公开(公告)号：US20070206334A1
公开(公告)日：2007-09-06
申请号：US11797603
申请日：2007-05-04
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译：提供了一种用于制造磁阻装置的方法。该磁阻装置用于减少由退火引起的器件特性的劣化。磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。最靠近基底的绝缘层的层由金属或半导体氧化物制成。该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

77. 发明授权

US07231705B2 Method for forming a resist pattern of magnetic device 失效
标题翻译：用于形成磁性装置的抗蚀剂图案的方法
公开(公告)号：US07231705B2
公开(公告)日：2007-06-19
申请号：US10773234
申请日：2004-02-09
申请人： Takeo Kagami , Kazuki Sato
发明人： Takeo Kagami , Kazuki Sato
IPC分类号： G11B5/127 , G11B5/33 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T29/4906
摘要： A pattern forming method includes forming a resist pattern for lift off of a first film disposed on a surface side of a base, patterning the first film by dry etching using the resist pattern as a mask, depositing a second film after patterning, removing the resist pattern to remove a portion of the second film on the resist pattern, and etching the surface side of the base after removing the resist pattern. The etching includes dry-etching the surface side of the base using etching particles with a main incident angle of the etching particles to the surface side of the base being set in a range of 60° to 90° relative to a normal direction of the one surface of the base. The dry etching is performed while rotating the base about an axis substantially parallel with the normal direction.
摘要翻译：图案形成方法包括形成用于剥离设置在基底的表面侧上的第一膜的抗蚀剂图案，使用抗蚀剂图案作为掩模将干燥蚀刻图案化第一膜，在图案化之后沉积第二膜，除去抗蚀剂去除抗蚀剂图案上的第二膜的一部分的图案，并且在去除抗蚀剂图案之后蚀刻基底的表面侧。蚀刻包括使用蚀刻颗粒的基底的表面侧的蚀刻粒子的主入射角相对于一个的法线方向设定在60°〜90°的范围内的基底的表面侧的干法蚀刻底座表面。在使基部围绕基本上与法线方向平行的轴线旋转的同时进行干法蚀刻。

78. 发明授权

US08240026B2 Method of manufacturing a magneto-resistive device 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US08240026B2
公开(公告)日：2012-08-14
申请号：US12232785
申请日：2008-09-24
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译：一种用于制造磁阻装置的方法。该磁阻装置用于减少由退火引起的器件特性的劣化。磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。最靠近基底的绝缘层的层由金属或半导体氧化物制成。该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

79. 发明授权

US07916430B2 Thin-film magnetic head and manufacturing method thereof 有权
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US07916430B2
公开(公告)日：2011-03-29
申请号：US11836529
申请日：2007-08-09
申请人： Takeo Kagami , Takayasu Kanaya
发明人： Takeo Kagami , Takayasu Kanaya
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G11B5/3912
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an upper magnetic shield layer formed on the MR multi-layered structure, and an additional lower magnetic shield layer directly laminated on the lower magnetic shield layer outside both side ends in a track-width direction of the MR multi-layered structure. The additional lower magnetic shield layer is directly contacted with both side surfaces in a track-width direction of the MR multi-layered structure. A top surface of the additional lower magnetic shield layer is positioned higher in height than a top surface of the lower magnetic shield layer in a region where the MR multi-layered structure is formed.
摘要翻译：薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流在垂直于层压层表面的方向上流动，形成在MR多层上的上磁屏蔽层并且在MR多层结构的轨道宽度方向上的两个侧端外侧直接层压在下磁屏蔽层上的另外的下磁屏蔽层。附加的下磁屏蔽层在MR多层结构的轨道宽度方向上与两个侧表面直接接触。在形成MR多层结构的区域中，附加下磁屏蔽层的顶表面的高度位于比下磁屏蔽层的顶表面高。

80. 发明授权

US07770284B2 Manufacturing method of magnetoresistive effect element 有权
标题翻译：磁阻效应元件的制造方法
公开(公告)号：US07770284B2
公开(公告)日：2010-08-10
申请号：US11806224
申请日：2007-05-30
申请人： Naoki Ohta , Takeo Kagami
发明人： Naoki Ohta , Takeo Kagami
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/3967 , H01L43/08 , H01L43/12 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, forming a mask on the cap layer of the MR multi-layered film, patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, forming a magnetic domain control bias layer by using a lift off method using the mask, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and forming an upper electrode layer on the planarized top surface.
摘要翻译：电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成在其顶部具有盖层的MR多层膜，在其上形成掩模 MR多层膜，通过铣削通过掩模来形成MR多层膜以形成MR多层结构，在形成磁畴控制之后，通过使用使用掩模的剥离方法形成磁畴控制偏置层偏置层，在盖层上形成附加的盖层和磁畴控制偏置层的一部分，平坦化附加盖层的顶表面和磁畴控制偏置层，以及在平坦化的顶部上形成上电极层表面。

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