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    • 78. 发明授权
    • Optical information processor and semiconductor light emitting device suitable for the same
    • 光信息处理器和半导体发光器件适合相同
    • US06542526B1
    • 2003-04-01
    • US09297147
    • 1999-04-26
    • Atsuko NiwaTsukuru OhtoshiTakao KurodaMakoto OkaiTakeshi Shimano
    • Atsuko NiwaTsukuru OhtoshiTakao KurodaMakoto OkaiTakeshi Shimano
    • H01S500
    • B82Y20/00H01S5/3202H01S5/3407H01S5/343H01S5/34333
    • Provided are highly reliable information processing equipment enabling a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, which device is suitable for the information processing equipment. According to the present invention, there can be realized highly reliable optical information processing equipment enabling high recording density, which is capable of sufficiently recording or reproducing a dynamic image in or from a high-definition TV. An n-type impurity is doped in a barrier layer of a quantum-well active layer of a semiconductor light emitting device at a high density. Alternatively, the oriented plane of a quantum-well active layer of a semiconductor light emitting device is inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be reduced. The semiconductor light emitting device is represented by a gallium nitride based compound semiconductor laser device.
    • 提供了能够实现高记录密度的高度可靠的信息处理设备以及以低阈值电流密度可操作的蓝色,蓝紫色和紫色的半导体发光器件,该装置适用于信息处理设备。 根据本发明,可以实现能够实现高记录密度的高度可靠的光信息处理设备,其能够在高分辨率TV中或从高清晰度电视机中充分地记录或再现动态图像。在n型杂质中掺杂n型杂质 高密度的半导体发光器件的量子阱有源层的阻挡层。 或者,半导体发光器件的量子阱有源层的取向平面从(0001)面倾斜,从而可以减小半导体发光器件的阈值电流值。 半导体发光器件由氮化镓基化合物半导体激光器件表示。