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71. 发明申请

US20050031988A1 Resist polymer, resist composition and patterning process 审中-公开
标题翻译：抗蚀聚合物，抗蚀剂组成和图案化工艺
公开(公告)号：US20050031988A1
公开(公告)日：2005-02-10
申请号：US10910308
申请日：2004-08-04
申请人： Takeru Watanabe , Tsunehiro Nishi , Kenji Funatsu , Takao Yoshihara
发明人： Takeru Watanabe , Tsunehiro Nishi , Kenji Funatsu , Takao Yoshihara
IPC分类号： C08F220/18 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R6 is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1），（2）和（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3和R 4是H或OH，X是具有双环[2.2.1] 庚烷结构，由式（X-1）至（X-4）中的任一个表示：其中R 6是C 1 -C 10烷基。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的线边缘粗糙度，并且借助于电子束或深紫外线用于VLSI制造的微图案化。

72. 发明授权

US06541179B2 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06541179B2
公开(公告)日：2003-04-01
申请号：US09811695
申请日：2001-03-20
申请人： Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
发明人： Jun Hatakeyama , Youichi Ohsawa , Tsunehiro Nishi , Jun Watanabe
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0395 , Y10S430/122
摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is a monovalent cyclic or bridgedring C3-20, hydrocarbon group, R2 is hydroxyl, nitro, halogen, or a straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N, S or halogen atom, K− is a non-nucleophilic counter ion, x is equal to 1 or 2, and y is an integer of 0-3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.
摘要翻译：抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。光致酸产生剂是式（1）的锍盐，R1是一价环状或桥连的C3-20，烃基，R2是羟基，硝基，卤素或直链，支链或环状的一价C1-15烃基，其可以含有O，N，S或卤原子，K-是非亲核反离子，x等于1或2，y是0-3的整数。抗蚀剂组合物对ArF准分子激光敏感，具有良好的灵敏度和分辨率，并形成有利于蚀刻的厚膜。

73. 发明授权

US06420085B1 Resist compositions and patterning process 有权
标题翻译：抗蚀剂组合物和图案化工艺
公开(公告)号：US06420085B1
公开(公告)日：2002-07-16
申请号：US09663830
申请日：2000-09-15
申请人： Tsunehiro Nishi , Youichi Ohsawa , Jun Hatakeyama
发明人： Tsunehiro Nishi , Youichi Ohsawa , Jun Hatakeyama
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/122
摘要： A resist composition contains a base resin, a photoacid generator, and a solvent. The photoacid generator is a sulfonium salt of formula (1). R1 is hydroxyl, nitro, or straight, branched or cyclic monovalent C1-15 hydrocarbon group which may contain O, N or S, and two R1 groups may form a ring together wherein the R1 groups are straight, branched or cyclic divalent C1-15 hydrocarbon groups which may contain O, N or S, K− is a non-nucleophilic counter ion, x is 1 or 2, and y is 0, 1, 2 or 3. The resist composition is sensitive to ArF excimer laser light, has good sensitivity and resolution, and forms a thick film which is advantageous in etching.
摘要翻译：抗蚀剂组合物含有基础树脂，光致酸产生剂和溶剂。光酸产生剂是式（1）的锍盐，R1是可以含有O，N或S的羟基，硝基或直链，支链或环状的一价C 1〜C 15烃基，两个R 1基可以一起形成环， R1基团是可以含有O，N或S的直链，支链或环状二价C1-15烃基，K-是非亲核抗衡离子，x是1或2，y是0,1,2或3 抗蚀剂组成对ArF准分子激光敏感，具有良好的灵敏度和分辨率，形成了有利于蚀刻的厚膜。

74. 发明授权

US6030746A Di- and triphenyl monoterpene hydrocarbon derivatives, dissolution inhibitors, and chemically amplified positive resist compositions 失效
标题翻译：二苯基和三苯基单萜烃衍生物，溶解抑制剂和化学增强正性抗蚀剂组合物
公开(公告)号：US6030746A
公开(公告)日：2000-02-29
申请号：US831749
申请日：1997-04-01
申请人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C43/205 , C07C43/30 , C07C43/303 , C07C43/315 , C07C43/32 , C07C69/28 , C07C69/30 , C07C69/712 , C07C69/96 , C07F7/06 , C07F7/08 , C07F7/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07C43/303 , C07C69/96 , G03F7/0045 , C07C2101/14 , G03F7/039 , Y10S430/118
摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
摘要翻译：式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体耐腐蚀性。

75. 发明授权

US08129099B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129099B2
公开(公告)日：2012-03-06
申请号：US12370901
申请日：2009-02-13
申请人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
IPC分类号： G03F7/24 , G03F7/40 , G03F7/039 , G03F7/075
CPC分类号： H01L21/0337 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/40 , H01L21/0338
摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.
摘要翻译：通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

76. 发明授权

US06274286B1 Resist compositions 失效
标题翻译：抗蚀剂组合物
公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
申请人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
发明人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

77. 发明授权

US6048661A Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
标题翻译：聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
申请人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译：提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

78. 发明授权

US08921025B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US08921025B2
公开(公告)日：2014-12-30
申请号：US12793284
申请日：2010-06-03
申请人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
发明人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/00 , G03F7/20 , G03F7/039 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01≦a
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂组分（A）是包含式（1）的重复单元的聚合物，其中R 1是H，CH 2或CF 3，R 2是酸不稳定基团，R 3是H或CO 2 CH 3，X是O，S，CH 2或CH 2 CH 2，0.01＆ ; a <1和0.01＆nlE; b <1。当通过ArF光刻处理时，组合物形成具有令人满意的掩模保真度和最小LWR的图案。

79. 发明申请

US20050208424A1 Polymer, resist composition and patterning process 审中-公开
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050208424A1
公开(公告)日：2005-09-22
申请号：US11084997
申请日：2005-03-21
申请人： Koji Hasegawa , Tsunehiro Nishi , Seiichiro Tachibana
发明人： Koji Hasegawa , Tsunehiro Nishi , Seiichiro Tachibana
IPC分类号： G03F7/033 , C08F220/26 , C08F220/28 , G03C1/492 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1）至（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3 O， >和R 4是H或OH，X是具有金刚烷结构的叔烷基。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

80. 发明授权

US07718342B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07718342B2
公开(公告)日：2010-05-18
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9和R 11为H或CH 3，Y为亚甲基或O，当Y为亚甲基时，R 2为CO 2 R 10，当Y为O时，R 2为H或CO 2 R 10，R 10为C 1 -C 15烷基由O分隔，R 5和R 6是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

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