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热词
    • 79. 发明授权
    • Semiconductor device, light emitting apparatus and electronic device
    • 半导体装置,发光装置和电子装置
    • US08410482B2
    • 2013-04-02
    • US13075411
    • 2011-03-30
    • Kunihiro MatsudaHiroshi MatsumotoYukikazu Tanaka
    • Kunihiro MatsudaHiroshi MatsumotoYukikazu Tanaka
    • H01L29/04H01L29/76H01L21/02H01L31/062G11C21/00
    • H01L27/3262G09G3/3233G09G2300/0842H01L27/124
    • Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring.
    • 公开在包括第一晶体管的衬底,第一晶体管,第二晶体管以及第一晶体管的第一源极和第一漏电极的半导体器件中,沿着第一方向布置第二源电极和第二漏电极, 晶体管沿着第一方向以与第一源电极和第一漏电极相反的顺序排列,第一源电极和第二源电极通过源极连接布线连接,第一漏电极和第二漏极连接 通过漏极连接布线,第一栅电极和第二栅极通过栅极连接布线连接,源极连接布线和漏极连接布线设置在除了与第一栅电极,第二栅电极 和门连接接线。