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    • 74. 发明授权
    • Security control system
    • 安全控制系统
    • US07466216B2
    • 2008-12-16
    • US11059057
    • 2005-02-16
    • Daisuke KawamuraAkihito KimuraKeiji YamamotoKoichi MasamuraTakao OzawaYoshihide Nakane
    • Daisuke KawamuraAkihito KimuraKeiji YamamotoKoichi MasamuraTakao OzawaYoshihide Nakane
    • H04Q9/00
    • G07C9/00309B60R25/24G07C2009/00825
    • A control system for improving the security level of a security device. A portable device is provided with a communication function and has a portable device ID code. A security controller includes a memory for recording a controller ID code. The security controller communicates with the portable device to determine whether the portable device ID code matches the controller ID code, and controls deactivation of security functions for a door lock driver and an engine controller based on the determination result. In response to a restriction request signal, the management apparatus transmits a function restriction signal to the security controller. The security controller prohibits or restricts control of the door lock driver or the engine controller when receiving the function restriction signal and communicating with the portable device.
    • 一种用于提高安全设备安全级别的控制系统。 便携式设备具有通信功能并且具有便携式设备ID代码。 安全控制器包括用于记录控制器ID代码的存储器。 安全控制器与便携式设备通信以确定便携式设备ID代码是否与控制器ID代码相匹配,并且基于确定结果控制门锁驱动器和引擎控制器的安全功能的停用。 响应于限制请求信号,管理装置向安全控制器发送功能限制信号。 当接收功能限制信号并与便携式设备通信时,安全控制器禁止或限制门锁驱动器或发动机控制器的控制。
    • 76. 发明申请
    • Resist pattern forming method and semiconductor device manufacturing method
    • 抗蚀剂图案形成方法和半导体器件制造方法
    • US20060194155A1
    • 2006-08-31
    • US11360502
    • 2006-02-24
    • Daisuke KawamuraTsuyoshi ShibataShinichi Ito
    • Daisuke KawamuraTsuyoshi ShibataShinichi Ito
    • G03F7/00
    • G03F7/2022G03F7/2028G03F7/70341G03F7/7045
    • A resist pattern forming method includes forming a resist film above a substrate. A first exposure is performed in which a specific region of an edge of the resist film is irradiated with light much enough to allow subsequent development to dissolve the resist film, thereby forming a latent image in the resist film at the edge. The resist film whose edge has been irradiated is rinsed. A second exposure is performed in which a desired pattern of light is projected onto an exposure region of the rinsed resist film via a projection optical system of an immersion exposure tool with liquid whose refractive index is larger than that of air existing between the exposure region and the substrate-side face of a component element closest to the substrate in the projection optical system. Development on the exposure region of the resist film is performed.
    • 抗蚀剂图案形成方法包括在基板上形成抗蚀剂膜。 进行第一曝光,其中抗蚀剂膜的边缘的特定区域被足够多的光照射以允许随后的显影以溶解抗蚀剂膜,从而在边缘处在抗蚀剂膜中形成潜像。 冲洗其边缘的抗蚀剂膜。 进行第二次曝光,其中期望的图案通过浸没曝光工具的投影光学系统投射到冲洗的抗蚀剂膜的曝光区域上,其中折射率大于曝光区域和 在投影光学系统中最靠近基板的元件元件的基板侧面。 进行抗蚀剂膜的曝光区域的显影。