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71. 发明申请

US20050090388A1 Gas decomposing unit, electrode for a fuel cell, and method of manufacturing the gas decomposing unit 失效
标题翻译：气体分解装置，燃料电池用电极及气体分解装置的制造方法
公开(公告)号：US20050090388A1
公开(公告)日：2005-04-28
申请号：US10857958
申请日：2004-06-02
申请人： Kentaro Kishi , Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Taishi Shigematsu , Miho Watanabe , Hiroyuki Watanabe , Takashi Isozaki , Shigeki Ooma , Shinsuke Okada
发明人： Kentaro Kishi , Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Taishi Shigematsu , Miho Watanabe , Hiroyuki Watanabe , Takashi Isozaki , Shigeki Ooma , Shinsuke Okada
IPC分类号： B82B1/00 , B01J21/18 , B01J23/16 , B01J23/38 , B01J23/42 , B01J31/28 , B01J37/34 , B82B3/00 , C01B31/02 , H01M4/96
CPC分类号： B82Y30/00 , B01D2255/806 , B01D2258/0208 , B01J21/18 , B01J21/185 , B01J23/16 , B01J23/38 , B01J23/42 , B01J37/347
摘要： Provided are a gas decomposing unit and an electrode for a fuel cell capable of stably supporting a gas decomposing catalyst. A gas decomposing unit and an electrode for a fuel cell each including: a carbon nanotube structure having a mesh structure in which functional groups bonded to plural carbon nanotubes are chemically bonded to mutually cross-link the plural carbon nanotubes; and a gas decomposing catalyst supported on the carbon nanotube structure. A method of manufacturing a gas decomposing unit characterized by including: an applying step of applying, to the surface of a substrate, a solution containing plural carbon nanotubes to which functional groups are bonded; a cross-linking step of chemically bonding the functional groups to build a mesh structure in which the plural carbon nanotubes mutually cross-link; and a supporting step of forming the carbon nanotube structure supporting a gas decomposing catalyst.
摘要翻译：提供一种气体分解单元和能够稳定地支撑气体分解催化剂的燃料电池用电极。一种气体分解单元和燃料电池用电极，其特征在于，具有：具有网状结构的碳纳米管结构，其中与多个碳纳米管结合的官能团化学键合以使所述多个碳纳米管互相交联; 和负载在碳纳米管结构上的气体分解催化剂。一种制造气体分解装置的方法，其特征在于包括：施加步骤，向基材表面施加含有键合了官能团的多个碳纳米管的溶液; 化学键合所述官能团以形成多个碳纳米管相互交联的网格结构的交联步骤; 以及形成支撑气体分解催化剂的碳纳米管结构的支撑工序。

72. 发明申请

US20050087726A1 Composite and method of manufacturing the same 有权
标题翻译：复合材料及其制造方法
公开(公告)号：US20050087726A1
公开(公告)日：2005-04-28
申请号：US10909369
申请日：2004-08-03
申请人： Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
发明人： Kazunori Anazawa , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
IPC分类号： B82B1/00 , C01B31/02 , C22C1/10 , C22C26/00 , C22C47/00 , C22C47/14 , C22C49/14 , D01F9/127 , D01F11/12 , H01B1/00 , H01C1/00
CPC分类号： C22C26/00 , B82Y30/00 , C22C49/14 , C22C2026/002 , D01F9/127 , D01F11/12 , Y02P20/129 , Y10T428/249948
摘要： Provided are: a composite formed by mixing a carbon nanotube structure and a metal-containing material, the carbon nanotube structure having a network structure constructed by mutually cross-linking functional groups bonded to plural carbon nanotubes through chemical bonding of the functional groups together; and a method of manufacturing the same. The composite of the carbon nanotube and the metal-containing material is capable of effectively using characteristics of the carbon nanotube structure.
摘要翻译：提供：通过混合碳纳米管结构和含金属材料形成的复合材料，所述碳纳米管结构具有通过将所述官能团通过化学键合将多个碳纳米管相互交联的官能团相互交联而构成的网络结构; 及其制造方法。碳纳米管和含金属材料的复合物能够有效地利用碳纳米管结构的特性。

73. 发明申请

US20050083635A1 Capacitor and method of manufacturing the same 失效
公开(公告)号：US20050083635A1
公开(公告)日：2005-04-21
申请号：US10894021
申请日：2004-07-20
申请人： Shigeki Ooma , Hiroyuki Watanabe , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Shinsuke Okada , Kazunori Anazawa
发明人： Shigeki Ooma , Hiroyuki Watanabe , Chikara Manabe , Masaki Hirakata , Kentaro Kishi , Taishi Shigematsu , Miho Watanabe , Takashi Isozaki , Shinsuke Okada , Kazunori Anazawa
IPC分类号： B82B1/00 , B82Y30/00 , B82Y99/00 , H01G4/005 , H01G4/008 , H01G4/232 , H01G4/33 , H01G13/00
CPC分类号： H01G4/008 , B82Y10/00 , B82Y30/00 , H01G4/2325 , H01G4/33 , Y10S977/932 , Y10T29/417
摘要： To provide a capacitor capable of utilizing carbon nanotube characteristics effectively to obtain excellent electric or mechanical characteristics, and a method of manufacturing the same. The capacitor is characterized by including two opposing electrodes, at least one of the two electrodes being formed from a coating film of a carbon nanotube structure in which plural carbon nanotubes with functional groups bonded constitute a mesh structure by cross-linking the functional groups through chemical bonding. The method of manufacturing a capacitor includes: a coating step for coating a surface of a base body with a solution that contains plural carbon nanotubes with functional groups bonded; and a cross-linking step for forming a carbon nanotube structure layer in which the functional groups are chemically bonded to one another, thereby causing the carbon nanotubes to cross-link to one another and build a mesh structure.

74. 发明申请

US20050040371A1 Resistance element, method of manufacturing the same, and thermistor 失效
标题翻译：电阻元件及其制造方法和热敏电阻
公开(公告)号：US20050040371A1
公开(公告)日：2005-02-24
申请号：US10765927
申请日：2004-01-29
申请人： Miho Watanabe , Masaki Hirakata , Kazunori Anazawa , Chikara Manabe , Kentaro Kishi , Taishi Shigematsu , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
发明人： Miho Watanabe , Masaki Hirakata , Kazunori Anazawa , Chikara Manabe , Kentaro Kishi , Taishi Shigematsu , Takashi Isozaki , Hiroyuki Watanabe , Shigeki Ooma , Shinsuke Okada
IPC分类号： C01B31/02 , H01B1/00 , H01C7/00 , H01C7/04
CPC分类号： H01C7/008 , B82Y10/00 , B82Y30/00 , H01C7/048
摘要： To provide a resistance element having an electric resistance body with excellent stability and a method of manufacturing the same. The resistance element includes an electric resistance body, on a base body surface, consisting of a carbon nanotube structure layer 14, which configures a mesh structure in which at least plural carbon nanotubes are cross-linked to one another. The method of manufacturing the resistance element includes: an applying step of applying the base body surface 12 with a liquid solution containing carbon nanotubes having functional groups; and a cross-linking step of forming the carbon nanotube structure layer 14, used as an electric resistance body, that configures a mesh structure in which the plural carbon nanotubes are cross-linked to one another through curing of the liquid solution after application.
摘要翻译：提供具有稳定性优异的电阻体的电阻元件及其制造方法。电阻元件包括由碳纳米管结构层14构成的基体表面上的电阻体，其构成至少多个碳纳米管彼此交联的网状结构。制造电阻元件的方法包括：施加步骤，用包含具有官能团的碳纳米管的液体溶液涂覆基体表面12; 以及形成用作电阻体的碳纳米管结构层14的交联步骤，其通过在施加后固化液体溶液来形成多个碳纳米管彼此交联的网状结构。

75. 发明申请

US20130250562A1 WIRING BOARD DEVICE, LUMINAIRE, AND MANUFACTURING METHOD OF THE WIRING BOARD DEVICE 审中-公开
标题翻译：接线板设备接线板，灯管及其制造方法
公开(公告)号：US20130250562A1
公开(公告)日：2013-09-26
申请号：US13530678
申请日：2012-06-22
申请人： Hirotaka Tanaka , Kiyoshi Nishimura , Miho Watanabe , Nobuhiko Betsuda , Takuya Honma
发明人： Hirotaka Tanaka , Kiyoshi Nishimura , Miho Watanabe , Nobuhiko Betsuda , Takuya Honma
IPC分类号： F21V29/00 , F21L4/02 , H05K3/00 , H05K7/20
CPC分类号： H05K1/0201 , H01L2224/45015 , H01L2224/48091 , H05K1/0306 , H05K1/18 , H05K3/0061 , H05K2201/10106 , H05K2201/10189 , H05K2203/049 , Y10T29/49147 , Y10T29/49149 , H01L2924/00014 , H01L2924/2076
摘要： According to one embodiment, a wiring board device is provided in which even if the temperature of a ceramic board becomes high, the influence on a connector can be reduced and the occurrence of defects due to heat can be prevented. The wiring board device includes a common member. The ceramic board and the connector are placed on the common member. A wiring pattern of the ceramic board and the connector are electrically connected by wiring.
摘要翻译：根据一个实施例，提供了一种布线板装置，其中即使陶瓷板的温度变高，也可以降低对连接器的影响，并且可以防止由于热而引起的缺陷的发生。布线板装置包括公共构件。陶瓷板和连接器放置在公共构件上。陶瓷板和连接器的布线图案通过布线电连接。

76. 发明申请

US20130076230A1 MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE AND THE LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置和发光装置的制造方法
公开(公告)号：US20130076230A1
公开(公告)日：2013-03-28
申请号：US13598233
申请日：2012-08-29
申请人： Miho Watanabe , Nobuhiko Betsuda , Hirotaka Tanaka
发明人： Miho Watanabe , Nobuhiko Betsuda , Hirotaka Tanaka
IPC分类号： H01J9/22 , H05B33/12
CPC分类号： H01L33/501 , H01L24/45 , H01L33/641 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2224/8592 , H01L2924/12041 , H01L2924/12042 , H01L2933/0041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a manufacturing method for a light-emitting device includes: mounting a light-emitting element on a substrate; and dispersing, in liquid transparent resin, phosphor particles in micron order excited by light radiated from the light-emitting element to emit light and electrostatically applying or electrostatically spraying dispersed liquid of the phosphor particles to thereby form a layer including the phosphor particles on the upper surface of the light-emitting element.
摘要翻译：根据一个实施例，一种发光器件的制造方法包括：将发光元件安装在基板上; 并且在液体透明树脂中分散由发光元件辐射的光激发的微米级荧光体颗粒发光并静电施加或静电喷涂荧光体颗粒的分散液体，从而在上部形成包含荧光体颗粒的层发光元件的表面。

77. 发明申请

US20120217555A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120217555A1
公开(公告)日：2012-08-30
申请号：US13357381
申请日：2012-01-24
申请人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/42356 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7395
摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.
摘要翻译：实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。第二控制电极的电阻高于第三控制电极的电阻。

78. 发明授权

US08232593B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08232593B2
公开(公告)日：2012-07-31
申请号：US12714002
申请日：2010-02-26
申请人： Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Wataru Saito , Syotaro Ono , Hiroshi Ohta , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0649 , H01L29/0653 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semiconductor layer.
摘要翻译：根据本发明实施例的功率半导体器件包括第一或第二导电类型的第一半导体层，形成在第一半导体层上的第一导电类型的第二半导体层，第二导电类型的第三半导体层选择性地形成在第二半导体层的表面上，形成在第二半导体层的表面上的第三半导体层的周边中的至少一个沟槽，至少一个沟槽的底表面的深度比底部表面，并且比第一半导体层的顶表面浅，并且至少一个沟槽的一些或全部与第三半导体层的侧表面接触，至少一个绝缘体埋在第三半导体层至少一个沟槽，与第一半导体层电连接的第一主电极和电连接的第二主电极引导到第三半导体层。

79. 发明授权

US08159023B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08159023B2
公开(公告)日：2012-04-17
申请号：US12692527
申请日：2010-01-22
申请人： Syotaro Ono , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
发明人： Syotaro Ono , Wataru Saito , Nana Hatano , Hiroshi Ohta , Miho Watanabe
IPC分类号： H01L29/00
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7397
摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.
摘要翻译：半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

80. 发明申请

US20120068258A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068258A1
公开(公告)日：2012-03-22
申请号：US13052908
申请日：2011-03-21
申请人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/7811 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L29/0619 , H01L29/402 , H01L29/42372 , H01L29/66712 , H01L2224/37013 , H01L2224/40245 , H01L2224/40479 , H01L2224/40499 , H01L2224/4103 , H01L2224/84203 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/37099
摘要： According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type selectively provided on a surface of the first semiconductor region. The control electrode is provided on the first semiconductor region via a first insulating film. The extraction electrode is electrically connected to the control electrode. The second insulating film is provided on the first main electrode and the extraction electrode. The plurality of contact electrodes are provided in an inside of a plurality of first contact holes formed in the second insulating film and are electrically connected to the extraction electrode. The control terminal covers portions of the first main electrode provided on the first semiconductor region, on the second semiconductor region, and on the control electrode, respectively, and the extraction electrode, is electrically connected to the plurality of contact electrodes, and is electrically insulated from the first main electrode by the second insulating film.
摘要翻译：根据一个实施例，半导体器件包括第一主电极，控制电极，引出电极，第二绝缘膜，多个接触电极和控制端子。第一主电极电连接到第一导电类型的第一半导体区域和选择性地设置在第一半导体区域的表面上的第二导电类型的第二半导体区域。控制电极经由第一绝缘膜设置在第一半导体区域上。引出电极与控制电极电连接。第二绝缘膜设置在第一主电极和引出电极上。多个接触电极设置在形成在第二绝缘膜中的多个第一接触孔的内部，并与引出电极电连接。控制端子分别覆盖设置在第一半导体区域上，第二半导体区域上和控制电极上的第一主电极的部分，并且引出电极电连接到多个接触电极，并且是电绝缘的从第一主电极通过第二绝缘膜。

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