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    • 72. 发明授权
    • Shredder drive control device and method of drivingly controlling the shredder
    • 粉碎机驱动控制装置及驱动粉碎机的控制方法
    • US06561444B1
    • 2003-05-13
    • US09913304
    • 2001-08-13
    • Shunichi YokomineTomofumi TakahashiTakashi HoriHiroaki YoneyamaTadashi Abe
    • Shunichi YokomineTomofumi TakahashiTakashi HoriHiroaki YoneyamaTadashi Abe
    • B02C2500
    • B02C18/0007B02C2018/0038
    • A driving and controlling system for driving a shredding mechanism by a motor to shred paper sheets increases shredding capacity represented by the number of paper sheets that can be simultaneously shredded while limiting input current in an allowable range and reduces time necessary for shredding a predetermined number of paper sheets. The driving and controlling system comprises a motor (4) for driving a shredding mechanism (5) for shredding paper sheets (10), and a controller (1) interposed between the motor and a commercial power supply system (13) to control power to be supplied to the motor. The motor has a characteristic to reduce motor torque substantially linearly with the increase of operating speed for voltage applied thereto as a parameter. The controller controls the motor so that the operating speed of the motor decreases as the necessary torque of the shredding mechanism required for shredding paper sheets increases, and the power supplied from the commercial power supply system may not increase beyond a predetermined level.
    • 用于通过马达驱动切碎机构以切碎纸张的驱​​动和控制系统提高了可以同时切碎的纸张数量所代表的粉碎能力,同时将输入电流限制在允许范围内并减少了粉碎预定数量的 纸张 驱动和控制系统包括用于驱动用于粉碎纸张(10)的粉碎机构(5)的马达(4),以及插入在马达和商用电源系统(13)之间的控制器(1),以控制功率 供给电机。 电动机具有随着作为参数施加于其上的电压的运行速度的增加而基本线性地减小电动机转矩的特性。 控制器控制电动机,使得电动机的操作速度随着粉碎纸张所需的粉碎机构的必要扭矩的增加而减小,并且从商用电源系统提供的电力可能不会超过预定水平。
    • 75. 发明授权
    • Semiconductor nonvolatile memory with resonance tunneling
    • 具有谐振隧道的半导体非易失性存储器
    • US5604357A
    • 1997-02-18
    • US500826
    • 1995-07-11
    • Takashi Hori
    • Takashi Hori
    • H01L21/8247B82B1/00G11C11/56H01L21/8234H01L21/8246H01L27/088H01L27/105H01L27/115H01L29/423H01L29/788H01L29/792H01L29/06
    • H01L29/7887G11C11/56H01L29/42324H01L29/66825G11C2211/5614
    • A semiconductor device comprising a substrate having thereon a capacitance part and an electrode, the capacitance part having two storage regions for conductive carriers, the storage regions having therebetween a first barrier region of a multi-tunneling structure, a second barrier region being provided among the storage region, semiconductor substrate and electrode, the first barrier region comprising two tunneling barriers and a low barrier region interposed therebetween, so that when the conductive carriers are moved between the storage regions to store memory by use of polarization characteristic, high voltage makes higher probability of conductive carrier shift and low voltage lower probability of the carrier shift in synergistic manner, whereby the semiconductor device having merits of writing, erasing and reading characteristic in DRAMs and flash EEPROMs memories.
    • 一种半导体器件,包括其上具有电容部分和电极的衬底,所述电容部分具有用于导电载体的两个存储区域,所述存储区域之间具有多隧道结构的第一势垒区域,所述第二阻挡区域设置在 存储区域,半导体衬底和电极,第一屏障区域包括两个隧道势垒和介于其间的低阻挡区域,使得当导电载体在存储区域之间移动以通过使用极化特性存储存储器时,高电压具有更高的概率 导电载波偏移和低电压较低的载波移位概率协同方式,由此半导体器件具有写入,擦除和读取特性在DRAM和闪存EEPROM存储器中的优点。
    • 76. 发明授权
    • Automatic platen gap adjusting device for printer
    • 打印机自动压板间隙调节装置
    • US5476328A
    • 1995-12-19
    • US352623
    • 1994-12-09
    • Takashi Hori
    • Takashi Hori
    • B41J25/308B41J11/20
    • B41J25/3082B41J25/308
    • An automatic platen gap adjusting device for a printer for automatically adjusting a relative gap length between a platen and a recording head, and for checking whether the recording head and a recording sheet are in contact after the adjustment. The device includes a carriage motor for driving a carriage having a recording head, load detection means for detecting a load from a load current of the carriage motor when the carriage is moved in parallel with the platen shaft, initial load storage means for storing an initial load before the recording sheet is loaded, contact judgment means for comparing the load when the recording sheet is loaded and the initial load, and for judging whether the recording head contacts the recording sheet when a difference between these loads exceeds a preset value, a stepper motor for moving the carriage orthogonal to the platen shaft, an encoder for generating a number of pulse signals proportional to an amount of orthogonal movement of the carriage, abutment judgment means for moving the carriage toward the platen from a reference position and for judging the time to abutment, sheet thickness calculation means for calculating the thickness of the recording sheet, and control means that adjusts the platen gap based on the detected sheet thickness.
    • 一种用于打印机的自动压板间隙调节装置,用于自动调节压板和记录头之间的相对间隙长度,并且用于在调整之后检查记录头和记录纸是否接触。 该装置包括用于驱动具有记录头的托架的托架马达,用于当托架平行于压板轴移动时检测来自托架马达的载荷电流的载荷的载荷检测装置,用于存储初始载荷的初始载荷存储装置 加载记录纸张之前的负载,接触判断装置,用于比较当记录纸被装入时的负载和初始负载之间,并且当这些负载之间的差异超过预设值时,判断记录头是否与记录纸接触,步进机 用于使托架正交于压盘轴的马达,用于产生与滑架正交运动量成比例的多个脉冲信号的编码器,用于将托架从基准位置朝向压板移动并用于判断时间的邻接判断装置 用于计算记录纸的厚度的片材厚度计算装置和调节的控制装置 基于检测到的片材厚度的压板间隙。
    • 77. 发明授权
    • Semiconductor device and method for fabricating the same
    • 半导体装置及其制造方法
    • US5403786A
    • 1995-04-04
    • US251642
    • 1994-05-31
    • Takashi Hori
    • Takashi Hori
    • H01L21/28H01L21/30H01L21/31H01L21/314H01L29/51H01L21/283
    • H01L21/28185H01L21/28202H01L21/3003H01L21/3144H01L29/518
    • Disclosed are a semiconductor device possessing an insulating film which is a silicon oxide film containing nitrogen formed on a semiconductor substrate, with the hydrogen concentration ([H]) in this oxide film satisfying the condition of ##EQU1## where m.perspectiveto.2.0.+-.0.4, n.perspectiveto.2.5.+-.0.5 k.perspectiveto.2.0.+-.0.4 (at. %).sup.-2[H.sub.ox ]: hydrogen concentration in an ordinary thermally grown silicon oxide film[N]: concentration of nitrogen contained in the interface of oxide film and substrate; and a method for fabricating a semiconductor device comprising the steps of forming a nitrided oxide silicon film by nitrizing a thermally grown silicon oxide film formed on a semiconductor substrate in a nitrizing atmosphere by using a rapid heating furnace, reannealing it in an oxidizing or inert gas atmosphere by using a rapid heating furnace to form a reannealed nitrided oxide insulating film, and forming a gate electrode.
    • 公开了具有绝缘膜的半导体器件,该半导体器件是在半导体衬底上形成有氮的氧化硅膜,该氧化物膜中的氢浓度([H])满足条件,其中m&persp&2.0 +/- 0.4,n&persp和2.5 +/- 0.5k&persp&2.0 +/- 0.4(at。%)-2 [Hox]:普通热生长氧化硅膜中的氢浓度[N]:氧化物界面中含有的氮浓度 膜和底物; 以及一种制造半导体器件的方法,包括以下步骤:通过使用快速加热炉在氮化气氛中对形成在半导体衬底上的热生长氧化硅膜进行氮化,形成氮化氧化物硅膜,在氧化或惰性气体中再退火 通过使用快速加热炉形成再退火的氮化氧化物绝缘膜,形成栅电极。