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71. 发明申请

US20120100654A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120100654A1
公开(公告)日：2012-04-26
申请号：US13289507
申请日：2011-11-04
申请人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/3202 , H01S2301/14
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有六边形III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括形成在所述半极性主表面上的衬底和半导体区域; 在六边形III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

72. 发明授权

US08022502B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08022502B2
公开(公告)日：2011-09-20
申请号：US12307211
申请日：2008-03-26
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

73. 发明授权

US07488454B2 Microchannel structure body 有权
标题翻译：微通道结构体
公开(公告)号：US07488454B2
公开(公告)日：2009-02-10
申请号：US10548600
申请日：2004-03-18
申请人： Koji Katayama , Toru Futami
发明人： Koji Katayama , Toru Futami
IPC分类号： B01J8/00
CPC分类号： B01J19/0093 , B01J2219/00783 , B01J2219/00835 , B01J2219/00853 , B01J2219/00873 , B01J2219/00891
摘要： A fine channel device, having an inlet opening for introducing a gas and an inlet path interconnecting with this inlet opening, a fine channel interconnecting with the inlet path, a discharge path interconnecting with the fine channel, and a discharge opening interconnecting with this discharge path. The inner diameter of the inlet path is greater than that of the fine channel, and either increases gradually, or remains identical, with increasing distance from the position where the inlet opening and the inlet path are in interconnection with each other.
摘要翻译：具有用于引入气体的入口和与该入口相互连接的入口通道的精细通道装置，与入口路径相互连接的精细通道，与微通道相互连接的放电路径以及与该排出路径互连的排出口。入口通道的内径大于细通道的内径，并且随着距离入口开口和入口路径彼此互连的位置的距离的增加而逐渐增加或保持相同。

74. 发明申请

US20080223720A1 MICROCHANNEL STRUCTURE AND FINE-PARTICLE PRODUCTION METHOD USING THE SAME 有权
标题翻译：微通道结构和微粒生产方法
公开(公告)号：US20080223720A1
公开(公告)日：2008-09-18
申请号：US11847788
申请日：2007-08-30
申请人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
发明人： Maho Yamanaka , Akira Kawai , Koji Katayama , Hiroki Takamiya
IPC分类号： G01N27/26
CPC分类号： B01F3/0807 , B01F5/0475 , B01F5/0478 , B01F13/0059 , B01F13/1013 , B01F13/1022 , B01J19/0093 , B01J2219/00783 , B01J2219/00822 , B01J2219/00824 , B01J2219/00826 , B01J2219/00828 , B01J2219/00831 , B01J2219/00833 , B01J2219/0086 , B01J2219/00889 , B01J2219/00891 , B01J2219/00903 , Y10T137/0396
摘要： A microchannel structure including a dispersed-phase introduction channel which communicates with a dispersed-phase introduction inlet; a continuous-phase introduction channel which communicates with a continuous-phase introduction inlet; a discharge channel which communicates with a discharge outlet; a fine-particle formation channel; and a plurality of branch channels for dispersed-phase introduction which are microchannels; wherein one end of the fine-particle formation channel in a fluid traveling direction communicates with the continuous-phase introduction channel whereas the other end thereof communicates with the discharge channel; and wherein a side part of the dispersed-phase introduction channel and side part of the fine-particle formation channel communicate via the plurality of branch channel for dispersed-phase introduction.
摘要翻译：一种微通道结构，包括与分散相引入口连通的分散相导入通道; 与连续相导入口连通的连续相导入流路; 排出通道，其与排出口连通; 细颗粒形成通道; 以及用于分散相导入的多个分支通道，它们是微通道; 其特征在于，所述细粒形成流路的流体行进方向的一端与所述连续相导入流路连通，而所述微粒形成流路的另一端与所述排出流路连通。并且其中分散相导入通道的侧部和细颗粒形成通道的侧部通过多个用于分散相引入的分支通道连通。

75. 发明授权

US07338641B2 Fine channel device, desksize chemical plant and fine particle producing apparatus employing them 有权
标题翻译：精细通道装置，除草化工厂和使用它们的细粒生成装置
公开(公告)号：US07338641B2
公开(公告)日：2008-03-04
申请号：US10630847
申请日：2003-07-31
申请人： Akira Kawai , Koji Katayama , Toru Futami , Shinichi Matsumoto , Tomohiro Ohkawa , Tomoyuki Oikawa , Katsuyuki Hara
发明人： Akira Kawai , Koji Katayama , Toru Futami , Shinichi Matsumoto , Tomohiro Ohkawa , Tomoyuki Oikawa , Katsuyuki Hara
IPC分类号： B01L3/02 , B01L11/00 , B32B5/02 , B32B27/04 , B32B27/12
CPC分类号： B01F5/0646 , B01F3/0807 , B01F5/0652 , B01F13/0059 , B01F15/00032 , B01J19/0093 , B01J2219/00783 , B01J2219/0081 , B01J2219/00822 , B01J2219/00824 , B01J2219/00831 , B01J2219/00833 , B01J2219/00835 , B01J2219/0086 , B01J2219/00889 , B01J2219/00891 , B01J2219/00905 , B01J2219/00961 , B01J2219/00986 , B01J2219/0099 , Y10T436/11 , Y10T436/25 , Y10T436/25375 , Y10T436/2575
摘要： A fine channel device for performing a chemical treatment or for producing fine particles, capable of supplying a liquid to the fine channels evenly and producing products in a large quantity is provided. The fine channel device includes a storage space having a circular or polygonal recess for temporarily storing fluid, and supply channels formed in a radial direction from the storage space. A small chemical plant includes a plurality of the fine channel devices as fundamental constituents and a mechanism to supply at least one fluid and a mechanism to recover products produced.
摘要翻译：提供一种用于进行化学处理或生产细颗粒的精细通道装置，其能够均匀地向精细通道供应液体并大量生产产品。细通道装置包括具有用于临时存储流体的圆形或多边形凹槽的存储空间，以及从存储空间沿径向形成的通道。小型化工厂包括多个精细通道装置作为基本组成部分，以及提供至少一种流体和机构来回收所生产的产品的机构。

76. 发明申请

US20070203696A1 Content Distribution Server For Distributing Content Frame For Reproducing Music And Terminal 失效
标题翻译：内容分发服务器用于分发音乐和终端的内容框架
公开(公告)号：US20070203696A1
公开(公告)日：2007-08-30
申请号：US10592365
申请日：2005-03-31
申请人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
发明人： Shigeyuki Sakazawa , Koichi Takagi , Hiroshi Mitsuhashi , Koji Katayama
IPC分类号： G10L19/02
CPC分类号： H04L12/18 , G06Q30/0601 , H04M19/04
摘要： There is provided a system capable of distributing code-compressed data based on audio data on a music composition via the Internet to a mobile telephone so that a user can cut out a desired range from the code-compressed data and register it as a call sound. The system has a data structure of a content frame (3GPP, 3GPP2) containing code-compressed data (AAC) of audio data. The content frame has at least one cut-out position information in the AAC data in its extended function section. A mobile telephone has a content storage unit, a cut-out selection unit to be used by the user to select at least one cut-out position information contained in the extended function section of the content frame, and a data cut-out section for cutting out data from the code-compressed data. The code-compressed data which has been cut out is decompressed when called and the sound is outputted from a loudspeaker.
摘要翻译：提供了一种能够经由因特网将基于音乐数据的音频数据的代码压缩数据分发到移动电话的系统，使得用户可以从代码压缩数据中切出期望的范围并将其注册为通话声音。该系统具有包含音频数据的代码压缩数据（AAC）的内容帧（3GPP，3GPP2）的数据结构。内容帧在其扩展功能部分中的AAC数据中具有至少一个切出位置信息。移动电话具有内容存储单元，切入选择单元，用于用户选择包含在内容帧的扩展功能部分中的至少一个切出位置信息，以及数据切出部分，用于从代码压缩数据中切出数据。已被切出的代码压缩数据在被呼叫时被解压缩，声音从扬声器输出。

77. 发明授权

US07201873B2 Fine channel device, method for producing the fine channel device and use of the same 有权
标题翻译：细通道装置，精细通道装置的制造方法及其使用方法
公开(公告)号：US07201873B2
公开(公告)日：2007-04-10
申请号：US10120480
申请日：2002-04-12
申请人： Tsuyoshi Tanaka , Toshinori Hayashi , Toru Futami , Koji Katayama , Akira Kawai , Keiichiro Nishizawa
发明人： Tsuyoshi Tanaka , Toshinori Hayashi , Toru Futami , Koji Katayama , Akira Kawai , Keiichiro Nishizawa
IPC分类号： G01N30/00
CPC分类号： B01L3/502707 , B01L3/545 , B01L2200/0689 , B01L2200/12 , B01L2300/0806 , B01L2300/087 , B01L2300/0887 , B01L2400/0409 , B29C33/3878 , B29C33/424 , B29C45/2632 , B29L2017/005
摘要： A device includes a first substrate having a channel formed on front and rear surfaces of the first substrate, and an information recording layer forming an optical recording medium on at least one of the front and rear surfaces of the first substrate.
摘要翻译：一种器件包括：第一衬底，其具有形成在第一衬底的前表面和后表面上的沟道;以及信息记录层，在第一衬底的前表面和后表面中的至少一个上形成光学记录介质。

78. 发明申请

US20060237732A1 Light-emitting device, method for making the same, and nitride semiconductor substrate 失效
标题翻译：发光装置及其制造方法以及氮化物半导体基板
公开(公告)号：US20060237732A1
公开(公告)日：2006-10-26
申请号：US11361144
申请日：2006-02-23
申请人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
发明人： Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/10157 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译：提出了一种发光器件，其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层（n型Al x Ga 1-x N层3）; 与n型（n型）相比，配置在比GaN衬底1更远的p型氮化物半导体衬底层（p型Al x Ga 1-x N层5）氮化物半导体衬底层; 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层（多量子阱（MQW）4）。 p型氮化物半导体层侧被下放。此外，从与GaN衬底1的第一主表面相反的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。槽80包括在其上进行表面处理以平滑内周表面的部分（曲面部分）。

79. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

80. 发明授权

US06903374B2 Structure of p-electrode at the light-emerging side of light-emitting diode 失效
标题翻译：发光二极管发光侧的p电极的结构
公开(公告)号：US06903374B2
公开(公告)日：2005-06-07
申请号：US10457575
申请日：2003-06-09
申请人： Koji Katayama
发明人： Koji Katayama
IPC分类号： H01L33/06 , H01L33/12 , H01L33/28 , H01L33/32 , H01L33/38 , H01L33/42 , H01L27/15 , H01L29/12
CPC分类号： H01L33/38 , H01L33/28 , H01L33/32
摘要： A structure of a p-electrode formed at the light-emerging side of an LED that comprises (a) an n-type semiconductor substrate, (b) an n-type cladding layer, an active layer, a p-type cladding layer, and a p-type contact layer formed on the substrate in this order, and (c) an n-electrode formed on the back face of the substrate. The structure of the p-electrode comprises a mesh-shaped semi-transparent thin-film metal electrode for diffusing electric current formed on the p-type contact layer and a bonding electrode for wire bonding. The metal electrode comprises a covering portion having a transmittance of at least 10% and an opening portion having an opening ratio of at least 20%. The bonding electrode is formed at the periphery of the p-type contact layer and is bonded directly to the mesh-shaped semi-transparent thin-film metal electrode. This structure can increase the intensity of the output light emerging from the p-side.
摘要翻译：在LED的出射侧形成的p电极的结构包括：（a）n型半导体衬底，（b）n型覆层，有源层，p型覆层，以及在该基板上依次形成的p型接触层，（c）在基板的背面形成的n电极。 p电极的结构包括用于扩散形成在p型接触层上的电流的网状半透明薄膜金属电极和用于引线接合的接合电极。金属电极包括具有至少10％的透射率的覆盖部分和具有至少20％的开口率的开口部分。接合电极形成在p型接触层的周围，并直接接合在网状半透明薄膜金属电极上。这种结构可以增加从p侧出射的输出光的强度。

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