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71. 发明授权

US08729271B2 Glycine transporter inhibiting substances 有权
标题翻译：甘氨酸转运蛋白抑制物质
公开(公告)号：US08729271B2
公开(公告)日：2014-05-20
申请号：US13823574
申请日：2011-09-16
申请人： Minoru Moriya , Akito Yasuhara , Kazunari Sakagami , Hiroshi Ohta , Kumi Abe , Shuji Yamamoto , Yuko Araki , Hiroki Urabe , Xiang-Min Sun
发明人： Minoru Moriya , Akito Yasuhara , Kazunari Sakagami , Hiroshi Ohta , Kumi Abe , Shuji Yamamoto , Yuko Araki , Hiroki Urabe , Xiang-Min Sun
IPC分类号： A01N43/40 , A61K31/44 , A01N43/64 , A61K31/41 , C07D213/00 , C07D401/00 , C07D419/00
CPC分类号： C07D405/14 , C07D233/90 , C07D401/12 , C07D401/14 , C07D403/12 , C07D405/12 , C07D409/12 , C07D413/12 , C07D417/12 , C07D417/14 , C07D471/04
摘要： The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.), depression, drug addiction, spasm, tremor, pain, and sleep disorder:
摘要翻译：本发明旨在提供基于甘氨酸摄取抑制作用的新颖的式[I]化合物或其药学上可接受的盐，其可用于预防或治疗精神分裂症，阿尔茨海默病，认知功能障碍，痴呆，焦虑障碍（广泛性焦虑症，惊恐障碍，强迫症，社会焦虑症，创伤后应激障碍，特定恐惧症，急性应激障碍等），抑郁症，药物成瘾，痉挛，震颤，疼痛和睡眠障碍：

72. 发明申请

US20130248979A1 POWER SEMICONDUCTOR DEVICE 失效
标题翻译：功率半导体器件
公开(公告)号：US20130248979A1
公开(公告)日：2013-09-26
申请号：US13610532
申请日：2012-09-11
申请人： Syotaro Ono , Masaru Izumisawa , Hiroshi Ohta , Hiroaki Yamashita
发明人： Syotaro Ono , Masaru Izumisawa , Hiroshi Ohta , Hiroaki Yamashita
IPC分类号： H01L27/088
CPC分类号： H01L29/407 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.
摘要翻译：根据实施例的功率半导体器件包括其中设置MOSFET元件的元件部分和设置在元件部分周围的端接部分，并且在半导体衬底中分别彼此平行地设置有柱层。该器件包括第一沟槽和第一绝缘膜。第一沟槽设置在从MOSFET元件的源电极露出的终端部分的半导体衬底中的柱层的端部之间。第一绝缘膜设置在第一沟槽的侧表面和底表面上。

73. 发明授权

US08227854B2 Semiconductor device having first and second resurf layers 有权
标题翻译：具有第一和第二复层的半导体器件
公开(公告)号：US08227854B2
公开(公告)日：2012-07-24
申请号：US11936412
申请日：2007-11-07
申请人： Syotaro Ono , Wataru Saito , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta
发明人： Syotaro Ono , Wataru Saito , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta
IPC分类号： H01L29/66
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0634 , H01L29/0696 , H01L29/1095
摘要： A semiconductor device includes: a drift layer having a superjunction structure; a semiconductor base layer selectively formed in a part of one surface of the drift layer; a first RESURF layer formed around a region having the semiconductor base layer formed thereon; a second semiconductor RESURF layer of a conductivity type which is opposite to a conductivity type of the first semiconductor RESURF layer; a first main electrode connected to a first surface of the drift layer; and a second main electrode connected to a second surface of the drift layer. The first RESURF layer is connected to the semiconductor base layer. The second semiconductor RESURF layer is in contact with the first semiconductor RESURF layer.
摘要翻译：一种半导体器件包括：具有超结构结构的漂移层; 选择性地形成在所述漂移层的一个表面的一部分中的半导体基层; 在其上形成有半导体基底层的区域周围形成的第一RESURF层; 与第一半导体RESURF层的导电类型相反的导电类型的第二半导体RESURF层; 连接到所述漂移层的第一表面的第一主电极; 以及连接到漂移层的第二表面的第二主电极。第一RESURF层连接到半导体基层。第二半导体RESURF层与第一半导体RESURF层接触。

74. 发明授权

US08221094B2 Screw compressor in which low and high pressure stage compressor bodies overly at least portion of motor body 有权
标题翻译：螺杆压缩机，其中低压级和高压级压缩机主体至少部分电动机主体
公开(公告)号：US08221094B2
公开(公告)日：2012-07-17
申请号：US12348942
申请日：2009-01-06
申请人： Hitoshi Nishimura , Tomoo Suzuki , Hiroshi Ohta
发明人： Hitoshi Nishimura , Tomoo Suzuki , Hiroshi Ohta
IPC分类号： F04B25/00
CPC分类号： F04C18/16 , F01C21/007 , F04C23/00 , F04C23/001 , F04C29/005 , F04C29/04
摘要： A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.
摘要翻译：一种螺杆压缩机，包括：低压级压缩机体; 高压级压缩机主体，其进一步压缩由所述低压级压缩机主体压缩的压缩空气; 小齿轮分别设置在例如低压级压缩机主体的公转子和例如高压级压缩机主体的公转子上; 电机大齿轮例如设置在马达的旋转轴上; 以及可旋转地支撑并设有与大齿轮啮合的小齿轮的中间轴和与小齿轮啮合的大齿轮。由此，可以使电动机的转速相对较低，同时抑制齿轮的直径增大，能够实现成本的降低。

75. 发明授权

US08076502B2 2-amino-bicyclo(3.1.0) hexane-2,6-dicarboxylic ester derivative 失效
标题翻译： 2-氨基 - 双环（3.1.0）己烷-2,6-二羧酸酯衍生物
公开(公告)号：US08076502B2
公开(公告)日：2011-12-13
申请号：US12847392
申请日：2010-07-30
申请人： Akito Yasuhara , Kazunari Sakagami , Hiroshi Ohta , Atsuro Nakazato
发明人： Akito Yasuhara , Kazunari Sakagami , Hiroshi Ohta , Atsuro Nakazato
IPC分类号： C07C69/74 , C07C61/12
CPC分类号： C07C229/50 , C07D307/88
摘要： A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administrationA 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.
摘要翻译：一种有效治疗和预防精神疾病如精神分裂症，焦虑及其相关疾病，抑郁症，双相情感障碍和癫痫的药物。该药物拮抗II型代谢型谷氨酸受体的作用，并且在口服给药中表现出高活性。由式[I]表示的2-氨基 - 双环[3.1.0]己烷-2,6-二羧酸酯衍生物[其中R1和R2为相同或不同，并且各自表示氢原子，C 1-10烷基等; X表示氢原子或氟原子; Y表示-OCHR 3 R 4等（其中R 3和R 4相同或不同，并且各自表示氢原子，C 1-10烷基等; n表示1或2的整数）]，其药学上可接受的盐或水合物。

76. 发明授权

US08013360B2 Semiconductor device having a junction of P type pillar region and N type pillar region 有权
标题翻译：具有P型支柱区域和N型支柱区域的结的半导体器件
公开(公告)号：US08013360B2
公开(公告)日：2011-09-06
申请号：US12764763
申请日：2010-04-21
申请人： Wataru Saito , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
发明人： Wataru Saito , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
IPC分类号： H01L29/66
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/41741 , H01L29/7395 , H01L29/7397 , H01L29/7722 , H01L29/7806 , H01L29/7811 , H01L29/8611
摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section.
摘要翻译：半导体器件包括：第一导电类型的半导体层; 设置在半导体层的主表面上的第一导电类型的第一半导体柱区域; 第二导电类型的第二半导体柱区域，与半导体层的主表面上的第一半导体柱区域相邻设置，第二半导体柱区域形成基本上平行于半导体层的主表面的周期性排列结构以及第一半导体柱区域; 第一主电极; 第二导电类型的第一半导体区域; 第一导电类型的第二半导体区域; 第二主电极; 控制电极; 以及设置在包围第一半导体柱区域和第二半导体柱区域的边缘终端部分的半导体层上的高电阻半导体层。高电阻半导体层的掺杂浓度低于第一半导体柱区域。边界区域设置在设备中心区域和边缘终端部分之间。边界区域中与高电阻半导体层相邻的第一半导体柱区域和第二半导体柱区域具有沿着边缘终止部分逐步减小的深度。

77. 发明申请

US20110065667A1 PHENYLPYRAZOLE DERIVATIVES 有权
公开(公告)号：US20110065667A1
公开(公告)日：2011-03-17
申请号：US12951964
申请日：2010-11-22
申请人： Toshio NAKAMURA , Makoto Tatsuzuki , Dai Nozawa , Tomoko Tamita , Seiji Masuda , Hiroshi Ohta , Shuhei Kashiwa , Aya Fujino , Shigeyuki Chaki , Toshiharu Shimazaki
发明人： Toshio NAKAMURA , Makoto Tatsuzuki , Dai Nozawa , Tomoko Tamita , Seiji Masuda , Hiroshi Ohta , Shuhei Kashiwa , Aya Fujino , Shigeyuki Chaki , Toshiharu Shimazaki
IPC分类号： A61K31/695 , C07D231/10 , C07D413/12 , C07D281/06 , C07F7/10 , A61K31/415 , A61K31/5377 , A61K31/553 , A61P25/28 , A61P25/18 , A61P3/10 , A61P25/24 , A61P25/08 , A61P25/00
CPC分类号： C07D231/14 , C07D231/40 , C07D401/04 , C07D401/14 , C07D403/04 , C07D403/06 , C07D403/12 , C07D403/14 , C07D413/04 , C07D413/14
摘要： The present invention provides a prophylactic or therapeutic agent for dementia, Alzheimer's disease, attention-deficit hyperactivity disorder, schizophrenia, eating disorders, obesity, diabetes, hyperlipidemia, sleep disorders, narcolepsy, sleep apnea syndrome, circadian rhythm disorder, depression, allergic rhinitis or other diseases.A phenylpyrazole derivative represented by formula (1) or a pharmaceutically acceptable salt thereof: {wherein R1 and R2, which may be the same or different, each represent C1-C6 alkyl or C3-C8 cycloalkyl, or R1 and R2 are attached to each other together with their adjacent nitrogen atom to form a 4- to 7-membered saturated heterocyclic ring (wherein said saturated heterocyclic ring may be substituted with halogen or C1-C6 alkyl), n represents an integer of 0 to 2, T represents a hydrogen atom, halogen or C1-C6 alkyl, and R represents formula (I): or the like}.

78. 发明授权

US07802868B2 Nozzle plate, method of manufacturing nozzle plate, liquid ejection head and image forming apparatus 失效
标题翻译：喷嘴板，喷嘴板的制造方法，喷液头和成像装置
公开(公告)号：US07802868B2
公开(公告)日：2010-09-28
申请号：US12027896
申请日：2008-02-07
申请人： Hiroshi Ohta
发明人： Hiroshi Ohta
IPC分类号： B41J2/045
CPC分类号： B41J2/1433 , B41J2/1606 , B41J2/162 , B41J2/1642 , Y10T29/49401
摘要： The nozzle plate has: a first metal layer in which a hole section corresponding to a nozzle hole is formed; a liquid-repellent layer formed on a front surface of the first metal layer, an inner surface of the hole section in the first metal layer, and an opening perimeter region of the hole section on a rear surface of the first metal layer; and a second metal layer formed on a rear surface side of the first metal layer, wherein the liquid-repellent layer on the rear surface of the first metal layer is sandwiched between the first metal layer and the second metal layer.
摘要翻译：喷嘴板具有：形成与喷嘴孔对应的孔部的第一金属层; 形成在第一金属层的前表面上的防液层，第一金属层中的孔部的内表面和第一金属层的后表面上的孔部的开口周边区域; 以及形成在所述第一金属层的背面侧的第二金属层，其中，所述第一金属层的背面上的所述排斥层夹在所述第一金属层和所述第二金属层之间。

79. 发明申请

US20100233004A1 Air Compressor of Water Injection Type 有权
标题翻译：注水型空气压缩机
公开(公告)号：US20100233004A1
公开(公告)日：2010-09-16
申请号：US12709275
申请日：2010-02-19
申请人： Takehiro MATSUZAKA , Hiroshi Ohta
发明人： Takehiro MATSUZAKA , Hiroshi Ohta
IPC分类号： F04C29/04
CPC分类号： F04C29/0014 , F04B39/06 , F04B39/062 , F04C18/16 , F04C2210/128 , F04C2280/04
摘要： In a water injection air compressor including a compressor main body for compressing air, a water-feed line for feeding water to an actuation chamber in the compressor main body, an air release valve for releasing the compressed air from the compressor main body, and a control panel for executing an on-load operation mode in which water is fed into the actuation chamber and an air release valve is closed and a no-load operation mode in which the water is fed into the actuation chamber and the air release valve is opened, wherein the control panel further executes a dry operation mode in which the water is prevented from being fed into the actuation chamber and with the air release valve is opened.
摘要翻译：在包括用于压缩空气的压缩机主体的水注射空气压缩机中，将水供给到压缩机主体中的致动室的供水管线，用于从压缩机主体释放压缩空气的排气阀，以及控制面板，用于执行其中水被供给到致动室中的空载操作模式和空气释放阀关闭，以及空气操作模式，其中水被供给到致动室和排气阀打开其特征在于，所述控制面板进一步执行干式运转模式，在所述干式运转模式中，防止水进入所述致动室，并且所述排气阀打开。

80. 发明申请

US20100200936A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100200936A1
公开(公告)日：2010-08-12
申请号：US12764763
申请日：2010-04-21
申请人： Wataru SAITO , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
发明人： Wataru SAITO , Syotaro Ono , Masakatsu Takashita , Yasuto Sumi , Masaru Izumisawa , Hiroshi Ohta , Wataru Sekine
IPC分类号： H01L29/78
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/404 , H01L29/41741 , H01L29/7395 , H01L29/7397 , H01L29/7722 , H01L29/7806 , H01L29/7811 , H01L29/8611
摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section.
摘要翻译：半导体器件包括：第一导电类型的半导体层; 设置在半导体层的主表面上的第一导电类型的第一半导体柱区域; 第二导电类型的第二半导体柱区域，与半导体层的主表面上的第一半导体柱区域相邻设置，第二半导体柱区域形成基本上平行于半导体层的主表面的周期性排列结构以及第一半导体柱区域; 第一主电极; 第二导电类型的第一半导体区域; 第一导电类型的第二半导体区域; 第二主电极; 控制电极; 以及设置在包围第一半导体柱区域和第二半导体柱区域的边缘终端部分的半导体层上的高电阻半导体层。高电阻半导体层的掺杂浓度低于第一半导体柱区域。边界区域设置在设备中心区域和边缘终端部分之间。边界区域中与高电阻半导体层相邻的第一半导体柱区域和第二半导体柱区域具有沿着边缘终止部分逐步减小的深度。

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