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71. 发明授权

US5684824A Semiconductor light emitting device 失效
公开(公告)号：US5684824A
公开(公告)日：1997-11-04
申请号：US671554
申请日：1996-06-27
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/065 , H01S5/10 , H01S5/14 , H01S5/20 , H01S5/50 , H01S3/10
CPC分类号： H01S5/141 , H01S5/5018 , H01S5/065 , H01S5/1064 , H01S5/20 , H01S5/5045
摘要： A semiconductor light emitting device includes a semiconductor light amplifier, a mirror which reflects light emanating from the rear end face of the semiconductor light amplifier to return the light to the rear end face of the semiconductor light amplifier, and a band pass filter which is inserted into the optical path of the light emanating from the rear end face of the semiconductor light amplifier and has a narrow transmission wavelength band.

72. 发明授权

US5033043A Optical head apparatus for optical disks 失效
标题翻译：光盘用光头装置
公开(公告)号：US5033043A
公开(公告)日：1991-07-16
申请号：US385592
申请日：1989-07-10
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： G11B7/135 , G11B11/10 , G11B11/105
CPC分类号： G11B7/1384
摘要： An optical head apparatus for optical disks has a recording and reading laser beam generator and a wavelength reducer including reducing the wavelength of light from the laser generator. The laser beam generator is a separate unit from the head slider portion, the two being connected by an optical fiber which is used to transmit the recording and reading laser light to the slider. This arrangement enables short-wavelength laser light below 550 nm to be used for writing and reading operations without increasing the weight of the slider, thereby offering high-speed access and high recording densities.
摘要翻译：用于光盘的光学头装置具有记录和读取激光束发生器和包括减少来自激光发生器的光的波长的波长衰减器。激光束发生器是与头部滑块部分分离的单元，两个由用于将记录和读取激光传输到滑块的光纤连接。这种布置使得低于550nm的短波长激光可用于写入和读取操作，而不增加滑块的重量，从而提供高速存取和高记录密度。

73. 发明授权

US4916708A Semiconductor light-emitting devices 失效
标题翻译：半导体发光器件
公开(公告)号：US4916708A
公开(公告)日：1990-04-10
申请号：US371177
申请日：1989-06-26
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/32 , H01S5/34326 , H01S5/2004 , H01S5/3211 , H01S5/3215 , H01S5/32325 , H01S5/3409
摘要： A semiconductor light-emitting device is provided with optical guide layers that include at least part of compositionally graded layers provided adjacent to the light-emitting layer, and at least one end of the compositionally graded layers is provided with a bridging layer wherein the first derivative of each composition profile with respect to the layer thickness is continuous. This provides an extremely smooth change of composition from one layer to the next, and eliminates problems such as overshoot and undershoot, and can be accomplished using a general control system based on PID.
摘要翻译：半导体发光器件设置有光导层，其包括邻近发光层设置的组成梯度层的至少一部分，并且组成梯度层的至少一端设置有桥接层，其中第一衍生物每个组成轮廓相对于层厚度是连续的。这提供了从一层到下一层的组合的非常平滑的变化，并且消除了诸如过冲和下冲的问题，并且可以使用基于PID的通用控制系统来实现。

74. 发明授权

US07104704B2 Transmission apparatus using a plastic fiber 失效
标题翻译：使用塑料纤维的传输设备
公开(公告)号：US07104704B2
公开(公告)日：2006-09-12
申请号：US10603078
申请日：2003-06-25
申请人： Kenji Matsumoto , Toshiro Hayakawa
发明人： Kenji Matsumoto , Toshiro Hayakawa
IPC分类号： G02B6/42
CPC分类号： H04B10/2581
摘要： A transmission apparatus comprises a plastic fiber, and a photodetector for detecting light, which has been propagated through the plastic fiber. The photodetector comprises a plurality of semiconductor light receiving devices, whose light receiving sensitivity wavelength regions are identical with one another, each of the semiconductor light receiving devices having a light receiving area smaller than a cross-sectional area of a core of the plastic fiber. The transmission apparatus is capable of achieving both a high light receiving efficiency and quick response characteristics.
摘要翻译：传输装置包括塑料纤维和用于检测已经通过塑料纤维传播的光的光电检测器。光检测器包括多个半导体光接收装置，其光接收灵敏度波长区域彼此相同，每个半导体光接收装置的光接收面积小于塑料纤维的芯的横截面面积。发送装置能够实现高的光接收效率和快速的响应特性。

75. 发明授权

US07095430B2 Image exposing apparatus and image exposing method 失效
公开(公告)号：US07095430B2
公开(公告)日：2006-08-22
申请号：US10328179
申请日：2002-12-26
申请人： Kiichi Kato , Yoshinori Morimoto , Kenji Matsumoto , Toshiro Hayakawa
发明人： Kiichi Kato , Yoshinori Morimoto , Kenji Matsumoto , Toshiro Hayakawa
IPC分类号： B41J2/435
CPC分类号： H04N1/40025
摘要： In an image exposing apparatus and an image exposing method, a deterioration of an image quality caused by stray light is suppressed, while both a sensitive level and a non-sensitive level are properly set in accordance with a type of photosensitive material. In the image exposing apparatus, a recording level setting unit calculates a recording level corresponding to a light amount level stored in a recording level light amount memory and sets the calculated recording level. A non-recording level setting unit calculates a non-recording level from an extinction ratio, which corresponds to a type of photosensitive material stored in a photosensitive material information memory, and the recording level. An output voltage setting unit sets an output voltage such that a detected voltage becomes equal to one of the recording level and the non-recording level.

76. 发明申请

US20060088072A1 Semiconductor laser apparatus 审中-公开
标题翻译：半导体激光装置
公开(公告)号：US20060088072A1
公开(公告)日：2006-04-27
申请号：US11255932
申请日：2005-10-24
申请人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
发明人： Toshiro Hayakawa , Hideki Asano , Shinichi Nagahama , Yuji Matsuyama , Katsutoshi Komoto
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333
摘要： A GaN system stripe type semiconductor laser having an index guiding structure, and producing higher mode or multimode oscillation in the transverse mode, which is constructed such that the horizontal beam radiation angle of each of a plurality of the emitting regions is minimized to provide a high luminance focused beam. In a GaN system stripe type semiconductor laser, which has an index guiding structure constituted, for example, by a ridge structure formed on a p-GaN cap layer 28 and p-Al0.1Ga0.9N clad layer 27 with the width W2, and produces higher mode or multimode oscillation in the transverse mode, the effective index difference Δn between the central region of the stripe and outside of the stripe is set not greater than 1.5×10−2.
摘要翻译：一种具有折射率引导结构的GaN系带条型半导体激光器，在横模中产生较高模式或多模振荡，其结构使得多个发射区域中的每一个的水平射束辐射角最小化以提供高亮度聚焦光束。在GaN系带状半导体激光器中，其具有例如由p-GaN覆盖层28和p-Al 0.1 Ga 0.9形成的脊结构构成的折射引导结构具有宽度W 2的N包覆层27，并且在横向模式中产生较高模式或多模式振荡，条纹的中心区域和条纹外部之间的有效折射率差Deltan被设置为不大于1.5×10 ^{-2 。}

77. 发明授权

US06999486B2 Semiconductor laser element and semiconductor laser 有权
公开(公告)号：US06999486B2
公开(公告)日：2006-02-14
申请号：US10787768
申请日：2004-02-27
申请人： Toshiaki Kuniyasu , Toshiro Hayakawa , Toshiaki Fukunaga
发明人： Toshiaki Kuniyasu , Toshiro Hayakawa , Toshiaki Fukunaga
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S3/09415 , H01S5/0207 , H01S5/0224 , H01S5/02264 , H01S5/02423 , H01S5/4025
摘要： In a semiconductor laser element having a plurality of semiconductor layers formed on a substrate, a groove-form concave portion is formed on the surface of the substrate opposite to the surface having the semiconductor layers. The concave portion is filled with metal having a higher heat conductivity higher than the substrate. The semiconductor laser element achieves improved heat dissipation characteristics and high reliability even under high-output operation.

78. 发明授权

US06567444B2 High-power semiconductor laser device in which near-edge portions of active layer are removed 有权
标题翻译：去除有源层的近边缘部分的大功率半导体激光器件
公开(公告)号：US06567444B2
公开(公告)日：2003-05-20
申请号：US09820357
申请日：2001-03-29
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S500
CPC分类号： H01S5/164 , H01S5/209
摘要： In a semiconductor laser device, an active region, including a quantum well layer sandwiched between upper and lower optical waveguide layers, is formed on a substrate. A near-edge portion of the active region is etched down to a mid-thickness of the lower optical waveguide layer. A non-absorbing layer, made of a semiconductor material having a bandgap greater than photon energy of laser light generated in the active region, is formed over the active region. An etching stop layer is formed at the mid-thickness location in the lower optical waveguide layer so as to selectively stop the etching of the near-edge portion of the active region. An electron barrier layer, made of a semiconductor material having a bandgap greater than the bandgap of the upper optical waveguide layer, is formed at a mid-thickness location in the upper optical waveguide layer.
摘要翻译：在半导体激光器件中，在衬底上形成包括夹在上下光波导层之间的量子阱层的有源区。有源区域的近边缘部分被蚀刻到下部光波导层的中间厚度。在活性区域上形成由半导体材料制成的非吸收层，该半导体材料的带隙大于在有源区域中产生的激光的光子能量。在下部光波导层的中间位置处形成蚀刻停止层，以选择性地停止有源区域的近边缘部分的蚀刻。在上光波导层的中间厚度位置处形成由具有大于上光波导层的带隙的带隙的半导体材料制成的电子势垒层。

79. 发明授权

US06560264B1 Stripe type semiconductor light emitting element having InGaN active layer, combined with optical resonator including wavelength selection element 有权
标题翻译：具有InGaN有源层的带状半导体发光元件，与包含波长选择元件的光谐振器组合
公开(公告)号：US06560264B1
公开(公告)日：2003-05-06
申请号：US09604433
申请日：2000-06-28
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S310
CPC分类号： B82Y20/00 , H01L33/0045 , H01S5/0683 , H01S5/1078 , H01S5/141 , H01S5/2231 , H01S5/34333
摘要： A semiconductor light emitting apparatus includes a semiconductor light emitting element which includes a stripe structure and an active layer made of an InGaN material, and emits first light without laser oscillation; an optical resonator; and a first wavelength selection unit which allows resonance, in the optical resonator, of second light having a selected wavelength included in the first light emitted by the semiconductor light emitting element. Alternatively, instead of the first wavelength selection unit, a second wavelength selection unit which allows output of only the above second light from the semiconductor light emitting apparatus may be provided. In this case, the semiconductor light emitting apparatus may further include an optical detector which detects intensity of the second light; and an output regularizing unit which drives the semiconductor light emitting element based on the detected intensity so as to regularize the intensity of the second light.
摘要翻译：半导体发光装置包括半导体发光元件，其包括条状结构和由InGaN材料制成的有源层，并且发射没有激光振荡的第一光; 光学谐振器; 以及第一波长选择单元，其允许在所述光学谐振器中谐振具有由所述半导体发光元件发射的所述第一光中的所选波长的第二光。或者，代替第一波长选择单元，可以提供允许仅输出来自半导体发光装置的上述第二光的第二波长选择单元。在这种情况下，半导体发光装置还可以包括检测第二光的强度的光检测器; 以及输出规则化单元，其基于检测到的强度驱动半导体发光元件，以使第二光的强度正规化。

80. 发明授权

US5289484A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US5289484A
公开(公告)日：1994-02-22
申请号：US923763
申请日：1992-08-03
申请人： Toshiro Hayakawa
发明人： Toshiro Hayakawa
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S2301/18 , H01S5/2004 , H01S5/3211 , H01S5/3421 , H01S5/3432
摘要： A high efficiency laser diode that has a narrow beam divergence in a direction perpendicular with respect to the substrate, and a low threshold current.
摘要翻译：在与衬底垂直的方向上具有窄光束发散的低效率激光二极管和低阈值电流。

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