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71. 发明授权

US07173511B2 Surface-mounted thermistor and manufacturing method thereof 失效
公开(公告)号：US07173511B2
公开(公告)日：2007-02-06
申请号：US10859505
申请日：2004-06-01
申请人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
发明人： Jun-Ku Han , Su-An Choi , Chang-Mo Ko , An-Na Lee , Jong-Hwan Lee , Ju-Dam Kim , Jong-Ho Lee , Dong-Hyun Kim
IPC分类号： H01C7/10
CPC分类号： H05K3/3442 , H01C1/148 , H01C7/008 , H05K2201/09181 , H05K2201/09381 , H05K2201/10636 , Y02P70/611 , Y02P70/613
摘要： A thermistor, which is to be mounted on a PCB, for protecting other circuit elements is disclosed. Electrode patterns separately formed on both surfaces of a film resistance element are respectively shaped into two parts which are engaged to each other with a non-conductive gap interposed therebetween. Thus, a Tombstone phenomenon caused by asymmetric structure may be fundamentally prevented. Grooves are formed in both sides of the thermistor, and connection portions for electrically connecting the electrodes formed on both surfaces of the thermistor are formed through the inside of the grooves or through the sides except the grooves. Thus, though a crack arises in the connection portion, it is possible to prevent the crack from being propagated to the entire connection portion along the side of the thermistor.

72. 发明申请

US20060234437A1 Recessed-type field effect transistor with reduced body effect 有权
公开(公告)号：US20060234437A1
公开(公告)日：2006-10-19
申请号：US11452867
申请日：2006-06-14
申请人： Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee , Hyeoung-Won Seo , Dae-Joong Won
发明人： Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee , Hyeoung-Won Seo , Dae-Joong Won
IPC分类号： H01L21/8238
CPC分类号： H01L29/66537 , H01L21/823437 , H01L21/823487 , H01L27/10852 , H01L27/10876 , H01L29/1041 , H01L29/42376 , H01L29/66621
摘要： For fabricating a field effect transistor, an extra-doped channel region is formed below a surface of a semiconductor substrate. An opening is formed in the semiconductor substrate into the extra-doped channel region. A gate insulator is formed at walls of the opening such that the extra-doped channel region abuts the gate insulator at a bottom portion of the opening. The opening is filled with a gate electrode. Such an extra-doped channel region prevents undesired body effect in the field effect transistor.

73. 发明申请

US20060162688A1 Rotary engine 失效
标题翻译：旋转发动机
公开(公告)号：US20060162688A1
公开(公告)日：2006-07-27
申请号：US10527591
申请日：2003-09-17
申请人： Dong-Hyun Kim
发明人： Dong-Hyun Kim
IPC分类号： F02B53/00 , F02B57/00
CPC分类号： F01C1/40 , F02B53/02 , Y02T10/17
摘要： Disclosed herein is a rotary engine. The rotary engine includes pistons disposed in operating chambers of a rotary member. The pistons are guided by means of the guidance of guiding pieces engaged in a guiding groove formed at a housing so that the operating chambers are expanded. Each of the operating chambers is provided with an intake/exhaust port, which is opened or closed by means of a shutoff valve and a shutoff plate guided along guiding grooves formed at the housing. By means of the shutoff plates is partitioned an exhaust chamber, which is caved in the housing, when explosion occurs so that an explosion stroke is carried out at the rear part of the exhaust chamber, whereby a rotating force is obtained. After the explosion stroke is carried out, compressed air is supplied into the operating chambers through air-supplying channels, which are opened or closed by means of shutoff valves, so that gas left in the operating chambers is forcibly discharged. Consequently, introduction of lubricant through the intake/exhaust ports or leakage of pressure is prevented, and large power is obtained.
摘要翻译：这里公开了一种旋转式发动机。旋转发动机包括设置在旋转构件的操作室中的活塞。活塞通过引导形成在壳体上的引导槽的引导件引导，使得操作室膨胀。每个操作室设置有进气/排气口，其通过截止阀和沿着形成在壳体处的引导槽引导的截止板而打开或关闭。通过关闭板，当发生爆炸时，分隔出一个在壳体中塌陷的排气室，从而在排气室的后部进行爆炸行程，从而获得旋转力。在进行爆炸冲程之后，通过通过截流阀打开或关闭的供气通道将压缩空气供给到操作室，使得留在操作室中的气体被强制排出。因此，防止了通过进/出口引入润滑剂或泄漏压力，获得了大的功率。

74. 发明申请

US20050272199A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050272199A1
公开(公告)日：2005-12-08
申请号：US11147312
申请日：2005-06-08
申请人： Dong-Hyun Kim , Du-Heon Song
发明人： Dong-Hyun Kim , Du-Heon Song
IPC分类号： H01L21/336 , H01L21/762 , H01L21/763 , H01L21/8234 , H01L21/8242 , H01L21/8244 , H01L29/78
CPC分类号： H01L29/7834 , H01L21/76229 , H01L21/763 , H01L27/10876 , H01L29/66621
摘要： In a method of manufacturing a semiconductor device, a first trench is formed in a first region of a substrate and a second trench is formed in a second region of the substrate different from the first region. A depth of the first trench is less than that of the second trench. An insulation layer is formed in the second trench, so that semiconductor structures in the first trench are electrically isolated, and a conductive layer fills the first trench and extends above the first trench.
摘要翻译：在制造半导体器件的方法中，第一沟槽形成在衬底的第一区域中，并且第二沟槽形成在不同于第一区域的衬底的第二区域中。第一沟槽的深度小于第二沟槽的深度。在第二沟槽中形成绝缘层，使得第一沟槽中的半导体结构被电隔离，并且导电层填充第一沟槽并在第一沟槽之上延伸。

75. 发明申请

US20050134532A1 Apparatus and method for driving a plasma display panel 审中-公开
标题翻译：用于驱动等离子体显示面板的装置和方法
公开(公告)号：US20050134532A1
公开(公告)日：2005-06-23
申请号：US10980823
申请日：2004-11-04
申请人： Joon-Young Choi , Chung Park , Dong-Hyun Kim , Ho Lee , Jae Lee , Joong Kim , Sang Lee
发明人： Joon-Young Choi , Chung Park , Dong-Hyun Kim , Ho Lee , Jae Lee , Joong Kim , Sang Lee
IPC分类号： G09G3/20 , G09F9/313 , G09G3/288 , G09G3/291 , G09G3/292 , G09G3/294 , G09G3/296 , G09G3/298 , H01J17/49 , G09G3/28
CPC分类号： G09G3/298 , G09G3/288 , G09G3/2922 , G09G2320/041
摘要： The present invention relates to a plasma display panel, and more particularly, to an apparatus and method for driving a plasma display panel. According to an embodiment of the present invention, the apparatus for driving the plasma display panel includes a temperature sensor that senses a temperature of the plasma display panel, an erase signal tilt control unit that controls a tilt of an erase signal for erasing charges within a cell of the plasma display panel depending on the sensed temperature, and a driving unit that supplies an initialization signal for initializing the cell, an address signal for selecting the cell and a sustain signal for generating a sustain discharge in the cell to the plasma display panel after the charges within the cell are erased using the erase signal. Accordingly, a stabilized discharge can be implemented in such a manner that an ambient temperature is sensed when the plasma display panel is driven, an erase signal is controlled according to the sensed ambient temperature, and the controlled erase signal is applied.
摘要翻译：等离子体显示面板技术领域本发明涉及等离子体显示面板，更具体地，涉及一种用于驱动等离子体显示面板的装置和方法。根据本发明的实施例，用于驱动等离子体显示面板的装置包括：感测等离子体显示面板的温度的温度传感器;擦除信号倾斜控制单元，其控制擦除信号的倾斜，以擦除等离子体显示面板内的电荷等离子体显示面板的单元，以及提供用于初始化单元的初始化信号的驱动单元，用于选择单元的地址信号和用于在单元中产生维持放电的维持信号到等离子体显示面板在使用擦除信号擦除单元内的电荷之后。因此，可以以这样的方式实现稳定的放电，即当驱动等离子体显示面板时感测到环境温度，根据感测到的环境温度控制擦除信号，并施加受控的擦除信号。

76. 发明申请

US20050133836A1 Asymmetric MOS transistor with trench-type gate 有权
标题翻译：具有沟槽型栅极的非对称MOS晶体管
公开(公告)号：US20050133836A1
公开(公告)日：2005-06-23
申请号：US11021349
申请日：2004-12-23
申请人： Hyeoung-Won Seo , Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee
发明人： Hyeoung-Won Seo , Dong-Hyun Kim , Du-Heon Song , Sang-Hyun Lee
IPC分类号： H01L21/336 , H01L29/10 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4236 , H01L29/66621 , H01L29/66659
摘要： a A MOS (metal oxide semiconductor) transistor with a trench-type gate is fabricated with a channel stopping region for forming an asymmetric channel region for reducing short channel effects. For example in fabricating an N-channel MOS transistor, a gate structure is formed within a trench that is within a P-well. A channel stopping region with a P-type dopant is formed to a first side of the trench to completely contain an N-type source junction therein. An N-type drain junction is formed within a LDD region to a second side of the trench, thus forming the asymmetric channel region.
摘要翻译：制造具有沟槽型栅极的MOS（金属氧化物半导体）晶体管，其具有用于形成用于减小短沟道效应的不对称沟道区的沟道停止区域。例如在制造N沟道MOS晶体管时，栅极结构形成在P阱内的沟槽内。在沟槽的第一侧形成具有P型掺杂剂的沟道停止区，以在其中完全包含N型源极结。在LDD区内形成N型漏极结至沟槽的第二侧，从而形成非对称沟道区。

77. 发明申请

US20050000443A1 Apparatus for processing a substrate using plasma 审中-公开
标题翻译：用于使用等离子体处理衬底的装置
公开(公告)号：US20050000443A1
公开(公告)日：2005-01-06
申请号：US10882094
申请日：2004-06-30
申请人： Dong-Hyun Kim
发明人： Dong-Hyun Kim
IPC分类号： H01L21/3065 , B08B7/00 , C23C16/44 , C23C16/517 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , C23C16/517 , H01J37/321
摘要： An apparatus for processing a substrate including a processing chamber having an upper space into which a gas for processing a substrate is introduced and a lower space for exhausting processing plasma used in a process for processing the substrate and a byproduct generated in the process. An upper electrode is disposed in the upper space. The upper electrode changes the processing gas into the processing plasma, and also changes a cleaning gas into cleaning plasma for cleaning a first surface that defines the upper space. The substrate is disposed on a lower electrode. The lower electrode has an upper face defining the upper space. An auxiliary electrode is disposed in the lower space. The auxiliary electrode forms the cleaning plasma in the lower space to clean a second surface defining the lower space.
摘要翻译：一种用于处理衬底的设备，其包括具有上部空间的处理室，用于处理衬底的气体被引入到该处理室中，并且在用于处理衬底的处理过程中使用的用于排出处理等离子体的较低空间和在该过程中产生的副产物。上部电极设置在上部空间中。上部电极将处理气体改变为处理等离子体，并且还将清洁气体改变为清洁等离子体，以清洁限定上部空间的第一表面。衬底设置在下电极上。下电极具有限定上部空间的上表面。辅助电极设置在下部空间中。辅助电极在下部空间中形成清洁等离子体，以清洁限定较低空间的第二表面。

78. 发明申请

US20140165417A1 DEHUMIDIFYING APPARATUS FOR DRYER 审中-公开
标题翻译：干燥器除湿装置
公开(公告)号：US20140165417A1
公开(公告)日：2014-06-19
申请号：US14186419
申请日：2014-02-21
申请人： Seung-Phyo AHN , Sang-Ik Lee , Byeong-Jo Ryoo , Sung-Ho Song , Jeong-Yun Kim , Yang-Hwan Kim , Jae-Hyuk Wee , Dong-Hyun Kim , Yoon-Seob Eom , Yang-Ho Kim
发明人： Seung-Phyo AHN , Sang-Ik Lee , Byeong-Jo Ryoo , Sung-Ho Song , Jeong-Yun Kim , Yang-Hwan Kim , Jae-Hyuk Wee , Dong-Hyun Kim , Yoon-Seob Eom , Yang-Ho Kim
IPC分类号： F26B21/08
CPC分类号： F26B21/08 , D06F58/206 , D06F58/22 , D06F58/24
摘要： A dehumidifying apparatus for a dryer is provided that includes a case, a drum disposed inside the case that receives objects to be dried therein, and a hot air supplier that supplies hot air into the drum and dries the objects to be dried. The dehumidifying apparatus includes a heat exchanger that heat exchanges with air flowing from the drum, and an injection nozzle portion disposed between the hot air supplier and the heat exchanger so as to inject a certain jet. When gas introduced into the dehumidifying apparatus from the drum passes through the jet, foreign substances such as lint, contained in the gas may be separated, thereby preventing accumulation of the foreign substances on the dehumidifying apparatus.
摘要翻译：提供了一种用于干燥器的除湿装置，其包括壳体，设置在壳体内的容纳待干燥物体的滚筒，以及将热空气供应到滚筒中并干燥待干燥物体的热空气供应器。除湿装置包括：热交换器，其与从所述滚筒流出的空气进行热交换，以及设置在所述热空气供给器和所述热交换器之间的喷嘴部，以喷射一定的射流。当从滚筒引入除湿装置的气体通过射流时，包含在气体中的诸如棉绒的异物可能被分离，从而防止异物积聚在除湿装置上。

79. 发明授权

US08590172B2 Dehumidifying apparatus for dryer 有权
标题翻译：干燥机除湿装置
公开(公告)号：US08590172B2
公开(公告)日：2013-11-26
申请号：US12676248
申请日：2008-09-03
申请人： Seung-Phyo Ahn , Sang-Ik Lee , Byeong-Jo Ryoo , Sung-Ho Song , Jeong-Yun Kim , Yang-Hwan Kim , Jae-Hyuk Wee , Dong-Hyun Kim , Yoon-Seob Eom , Yang-Ho Kim
发明人： Seung-Phyo Ahn , Sang-Ik Lee , Byeong-Jo Ryoo , Sung-Ho Song , Jeong-Yun Kim , Yang-Hwan Kim , Jae-Hyuk Wee , Dong-Hyun Kim , Yoon-Seob Eom , Yang-Ho Kim
IPC分类号： F26B25/06
CPC分类号： D06F58/206
摘要： A dehumidifying apparatus is provided for a dryer, the dryer including a case; a drum disposed inside the case that receives objects to be dried therein; and a hot air supplying device that supplies hot air into the drum and dry the objects to be dried. The dehumidifying apparatus includes a plurality of dehumidifying devices, and is thereby capable of controlling humidity of exhausted air to a required level of humidity by removing moisture contained in air exhausted from the plurality of dehumidifying devices in multiple steps.
摘要翻译：为干燥机提供除湿装置，干燥机包括壳体; 设置在所述壳体内的容纳有待干燥物体的鼓; 以及将热空气供给到滚筒中并干燥待干燥物体的热空气供给装置。除湿装置包括多个除湿装置，从而能够通过从多个除湿装置排出的空气中分离多个步骤中的湿气来将排气的湿度控制到所需的湿度水平。

80. 发明申请

US20120252187A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120252187A1
公开(公告)日：2012-10-04
申请号：US13422487
申请日：2012-03-16
申请人： Gyu-Hwan Oh , Dong-Hyun Kim , Kyung-Min Chung , Dong-Hyun Im
发明人： Gyu-Hwan Oh , Dong-Hyun Kim , Kyung-Min Chung , Dong-Hyun Im
IPC分类号： H01L21/329 , H01L21/283 , H01L21/02
CPC分类号： H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/16 , H01L45/1683
摘要： A method of manufacturing the semiconductor device includes sequentially forming first to third mold layer patterns on a substrate and spaced apart from each other , forming a first semiconductor pattern between the first mold layer pattern and the second mold layer pattern, and a second semiconductor pattern between the second mold layer pattern and the third mold layer pattern, forming a first trench between the first mold layer pattern and the third mold layer pattern by removing a portion of the second mold layer pattern and portions of the first and second semiconductor patterns, depositing a material for a lower electrode conformally along side and bottom surfaces of the first trench, and forming first and second lower electrodes separated from each other on the first and second semiconductor patterns, respectively, by removing a portion of the material for a lower electrode positioned on the second mold layer pattern.
摘要翻译：制造半导体器件的方法包括在基片上依次形成第一至第三模层图案并彼此分开，在第一模层图案和第二模层图案之间形成第一半导体图案，以及第二半导体图案，第二模层图案和第三模层图案，通过去除第二模层图案的一部分和第一和第二半导体图案的部分，在第一模层图案和第三模层图案之间形成第一沟槽，用于下电极的材料沿着第一沟槽的侧表面和底表面共形地形成，并且通过移除位于第一和第二半导体图案上的下电极的材料的一部分，分别形成在第一和第二半导体图案上彼此分离的第一和第二下电极第二模层图案。

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