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71. 发明授权

US08021975B2 Plasma processing method for forming a film and an electronic component manufactured by the method 有权
标题翻译：用于形成膜的等离子体处理方法和通过该方法制造的电子部件
公开(公告)号：US08021975B2
公开(公告)日：2011-09-20
申请号：US12005683
申请日：2007-12-28
申请人： Kotaro Miyatani , Kohei Kawamura , Toshihisa Nozawa , Takaaki Matsuoka
发明人： Kotaro Miyatani , Kohei Kawamura , Toshihisa Nozawa , Takaaki Matsuoka
IPC分类号： H01L21/4763
CPC分类号： C23C16/45574 , C23C16/36 , C23C16/511 , C23C16/56 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01L21/3148 , H01L21/3185
摘要： A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a−2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.
摘要翻译：一种使用由等离子体处理的气体在基板上形成膜的等离子体处理方法。用于形成膜的等离子体处理方法包括以下步骤：通过使用CaFb气体在基板上形成CF膜（这里，a是计数数，b是满足式“b = 2×a -2“），用等离子体处理的气体处理CF膜，并在通过使用用等离子体处理的绝缘材料处理的CF膜上形成绝缘膜。

72. 发明授权

US07874781B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07874781B2
公开(公告)日：2011-01-25
申请号：US10569378
申请日：2004-08-26
申请人： Toshihisa Nozawa , Takaaki Matsuoka
发明人： Toshihisa Nozawa , Takaaki Matsuoka
IPC分类号： H01L21/677
CPC分类号： H01L21/67167 , H01L21/67173 , H01L21/67742 , Y10S414/139
摘要： A substrate processing apparatus includes a plurality of process chambers (20) for applying a process to substrate accommodated therein and a conveyance case (24) that conveys the accommodated substrates to the process chambers (20) and a transfer mechanism that moves the conveyance case (24) along a moving path. The conveyance case accommodates the substrates in an isolated state from an external atmosphere. The plurality of process chambers (20) are arranged in an aligned state on both sides of a moving path of the conveyance case (24). The conveyance case (24) has two conveyance ports (24a) in response to conveyance ports (20a) of the process chambers (20) arranged in alignment in two rows.
摘要翻译：一种基板处理装置，包括：多个处理室，用于对容纳在其中的基板进行处理;以及传送箱，其将所容纳的基板输送到处理室;以及传送机构， 24）沿着移动路径。输送箱容纳基板处于与外部气氛隔离的状态。多个处理室（20）在输送箱（24）的移动路径的两侧以排列状态布置。输送箱（24）响应于处理室（20）的输送端口（20a）排列成两行，具有两个输送口（24a）。

73. 发明申请

US20100025856A1 FABRICATION METHOD OF A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法和半导体器件
公开(公告)号：US20100025856A1
公开(公告)日：2010-02-04
申请号：US12531519
申请日：2008-03-28
申请人： Kohei Kawamura , Toshihisa Nozawa , Takaaki Matsuoka
发明人： Kohei Kawamura , Toshihisa Nozawa , Takaaki Matsuoka
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/31144 , C23C16/26 , H01L21/02074 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76808 , H01L21/76883 , Y10S438/951
摘要： A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。

74. 发明申请

US20080254641A1 Manufacturing Method Of Semiconductor Device And Film Deposition System 有权
标题翻译：半导体器件和薄膜沉积系统的制造方法
公开(公告)号：US20080254641A1
公开(公告)日：2008-10-16
申请号：US10585994
申请日：2005-01-13
申请人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
发明人： Yasuo Kobayashi , Kenichi Nishizawa , Takatoshi Kameshima , Takaaki Matsuoka
IPC分类号： H01L21/31 , C23C16/513
CPC分类号： H01L21/76835 , H01L21/02118 , H01L21/02126 , H01L21/02167 , H01L21/02274 , H01L21/31144 , H01L21/3127 , H01L21/3143 , H01L21/31633 , H01L21/76811 , H01L21/76832
摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.
摘要翻译：由CF制成的电介质膜（91）沉积在基板上。在绝缘膜（91）上形成包含SiCN膜（93）的保护层。作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上，通过含有硅，碳和氮的活性物质的等离子体。

75. 发明授权

US06285102B1 Drive mechanism having a gas bearing operable under a negative pressure environment 失效
标题翻译：具有可在负压环境下操作的气体轴承的驱动机构
公开(公告)号：US06285102B1
公开(公告)日：2001-09-04
申请号：US09541720
申请日：2000-04-03
申请人： Takaaki Matsuoka , Teruo Asakawa
发明人： Takaaki Matsuoka , Teruo Asakawa
IPC分类号： B65G4907
CPC分类号： F16C29/025 , F16C32/06 , H01L21/67742 , H01L21/67745
摘要： A drive mechanism provides a friction free movement of a movable member operated under a negative pressure environment. A gas bearing arrangement movably supports the movable element relative to a stationary element. The gas bearing arrangement is configured to be operated under the negative pressure environment inside the chamber. A drive arrangement drives the movable element from outside the chamber.
摘要翻译：驱动机构提供在负压环境下操作的可动构件的无摩擦运动。气体轴承装置相对于静止元件可移动地支撑可移动元件。气体轴承装置构造成在室内的负压环境下操作。驱动装置从室外驱动可移动元件。

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