专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US5621336A Neuron circuit 失效
标题翻译：神经元电路
公开(公告)号：US5621336A
公开(公告)日：1997-04-15
申请号：US488405
申请日：1995-06-07
申请人： Tadashi Shibata , Tadahiro Ohmi
发明人： Tadashi Shibata , Tadahiro Ohmi
IPC分类号： G06N3/063 , H01L27/115 , H01L29/788 , H03K17/00 , H03K19/23
CPC分类号： H01L29/7881 , G06N3/0635 , H01L27/115 , H03K2217/0036
摘要： A semiconductor device capable of realizing a synapse coupling of low power dissipation using a small number of elements and therefore a neuron computer chip of high integration degree and low power dissipation. The semiconductor includes a first gate electrode floating in potential formed on the region separating the source and drain regions through a first insulating film, a plurality of second gate electrodes capacitively coupled with the first gate through a second insulating film, and a first MOS type transistor, the source of which is connected to one of the second gates and the gate or the drain electrode is connected to a first interconnect for transferring signals of high or low potential level.
摘要翻译：一种半导体器件，其能够使用少量元件实现低功耗的突触耦合，因此能够实现高集成度和低功耗的神经元计算机芯片。半导体包括浮置在通过第一绝缘膜分离源区和漏区的区域上形成的电势的第一栅电极，通过第二绝缘膜与第一栅极电容耦合的多个第二栅极，以及第一MOS晶体管其源极连接到第二栅极中的一个并且栅极或漏极连接到用于传送高或低电位电平的信号的第一互连。

72. 发明授权

US5608340A Four-terminal semiconductor device 失效
标题翻译：四端子半导体器件
公开(公告)号：US5608340A
公开(公告)日：1997-03-04
申请号：US60362
申请日：1993-05-11
申请人： Tadashi Shibata , Tadahiro Ohmi
发明人： Tadashi Shibata , Tadahiro Ohmi
IPC分类号： G06G7/60 , G06F15/18 , G06N3/063 , G06N99/00 , H01L21/8234 , H01L27/088 , H01L27/115 , H01L29/66 , H01L29/788 , H03K19/23 , H03K19/094
CPC分类号： G06N3/0635 , H01L27/115 , H01L29/7881 , H01L2924/0002
摘要： A semiconductor device of this invention comprises on a substrate a first semiconductor region of one conductive type, first source and drain regions of the opposite conductive type formed in said semiconductor region, a first gate electrode formed in a region separating said source and drain regions, the first gate electrode being electrically floating through an insulating film, and at least two second gate electrodes connected to said first gate electrode by capacitive coupling, wherein an inversion layer is formed under said first gate electrode and said first source and drain regions are electrically connected together only when a predetermined threshold value is exceeded by the absolute value of a value obtained by linearly summing up the weighted voltages applied to said second gate electrodes.
摘要翻译：本发明的半导体器件在衬底上包括一个导电类型的第一半导体区域，形成在所述半导体区域中的相反导电类型的第一源极和漏极区域，形成在分离所述源极和漏极区域的区域中的第一栅电极，所述第一栅电极通过绝缘膜电浮动;以及至少两个第二栅电极，通过电容耦合连接到所述第一栅电极，其中反型层形成在所述第一栅电极下方，并且所述第一源极和漏极区电连接只有当预定阈值超过通过对施加到所述第二栅电极的加权电压进行线性求和而获得的值的绝对值时才合在一起。

73. 发明授权

US5521858A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5521858A
公开(公告)日：1996-05-28
申请号：US374779
申请日：1995-02-28
申请人： Tadashi Shibata , Tadahiro Ohmi
发明人： Tadashi Shibata , Tadahiro Ohmi
IPC分类号： H01L27/10 , G06N3/063 , H01L27/115 , H01L29/788 , H03K5/24 , H03K19/20
CPC分类号： G06N3/0635 , H01L27/115 , H01L29/788 , H03K5/2472
摘要： A semiconductor device of simple circuit capable of comparing the magnitudes of plural data at a high speed. This device has an inverter circuits formed by neuron MOS transistors; means for applying to a first input gate of the inverter circuit a first signal voltage which is common to the inverters belong to the foregoing inverter circuit group; means for applying predetermined second signal voltage to one or more second inout gates other than the first input gate of the inverter; and means for detecting the variation of the output voltage in at least one inverter circuit of the inverter circuit group due to the variation with time of either the first or the second signal voltage or both, and for applying positive feedback to given inverters of the inverter circuit group according to the detection.
摘要翻译：一种能够高速比较多个数据的幅度的简单电路的半导体器件。该器件具有由神经元MOS晶体管形成的反相器电路; 用于向逆变器电路的第一输入栅极施加属于上述逆变器电路组的逆变器公共的第一信号电压的装置; 用于将预定的第二信号电压施加到逆变器的第一输入栅极以外的一个或多个第二入射门的装置; 以及用于检测逆变器电路组的至少一个逆变器电路中由于第一或第二信号电压或两者的时间变化而导致的输出电压的变化的装置，并且用于向逆变器的给定反相器施加正反馈电路组根据检测。

74. 发明授权

US5370274A Apparatus for cleaning a wafer surface 失效
标题翻译：用于清洁晶片表面的装置
公开(公告)号：US5370274A
公开(公告)日：1994-12-06
申请号：US124109
申请日：1993-09-20
申请人： Tadahiro Ohmi , Tadashi Shibata
发明人： Tadahiro Ohmi , Tadashi Shibata
IPC分类号： B05B7/28 , B05B7/30 , B05B7/32 , H01L21/00 , B67D5/52
CPC分类号： H01L21/67057 , B05B7/28 , B05B7/30 , B05B7/32 , H01L21/67051
摘要： A cleaning apparatus for cleaning with a mixture of various chemicals. The cleaning apparatus includes a compressor for compressing and transferring a solution medium, at least one jet pipe, one end of which is connected to the compressor and the other end of which is open, and a plurality of suction pipes, connected to the jet pipe at a specified interval, respectively. The apparatus further includes a plurality of chemical tanks with an open end of the suction pipe being inserted into each of the chemical tanks, respectively. The invention permits a number of objects to be cleaned sequentially without being contaminated by making use of the principal of aspiration. In addition, the compressor is used only to pass the solution medium therethrough inside of the compressor and is never corroded by the mixture of chemicals.
摘要翻译：一种用各种化学物质的混合物清洗的清洁装置。该清洁装置包括用于压缩和传送溶液的压缩机，至少一个喷射管，其一端连接到压缩机，另一端打开;以及多个吸入管，连接到喷射管分别以指定的间隔。该装置还包括多个化学罐，吸入管的开口端分别插入每个化学罐中。本发明允许许多物体被顺序地清洁，而不会通过利用吸气原理被污染。此外，压缩机仅用于使溶液介质通过压缩机内部，并且不会被化学品的混合物腐蚀。

75. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

76. 发明申请

US20140186162A1 ROTATION MECHANISM FOR GAS EXHAUST PUMP, MANUFACTURING METHOD OF THE SAME, GAS EXHAUST PUMP HAVING ROTATION MECHANISM, AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：用于排气泵的旋转机构，其制造方法，具有旋转机构的气体排气泵及其制造方法
公开(公告)号：US20140186162A1
公开(公告)日：2014-07-03
申请号：US14131299
申请日：2012-06-27
申请人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
发明人： Masamichi Iwaki , Tadahiro Ohmi , Kenji Ohyama , Isao Akutsu , Hajime Iizuka
IPC分类号： F01D5/02
CPC分类号： F01D5/02 , F04C18/16 , F04C25/02 , F04C27/009 , F04C29/023 , F04C2220/30 , F04C2230/91 , Y10T29/49236
摘要： In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.
摘要翻译：在排气泵中，设置有能够确保安全旋转的旋转机构，能够大幅度减少密封气体的使用。本发明的旋转机构由旋转轴和密封壳构成。在旋转轴和密封壳体之间，提供预定间隙。在旋转轴的外表面和密封壳体的内表面中的至少一个上，设置有PFA膜。对于至少一个旋转轴和密封壳体的表面上的PFA膜，在用PFA涂覆之后，旋转机构构件的壁表面至少限定间隙，然后熔融和重熔过程，PFA膜是形成在其自由表面上具有高平滑度。

77. 发明授权

US08714188B2 Method for water hammerless opening of fluid passage, and method for supplying chemical solutions and device for water hammerless opening for which the method is used 有权
标题翻译：流体通道的无水锤打开方法，以及用于提供化学溶液的方法和使用该方法的无水锤打开装置
公开(公告)号：US08714188B2
公开(公告)日：2014-05-06
申请号：US13239715
申请日：2011-09-22
申请人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
发明人： Tadahiro Ohmi , Kouji Nishino , Masaaki Nagase , Ryousuke Dohi , Nobukazu Ikeda , Ryutaro Nishimura
IPC分类号： G05D7/06
CPC分类号： F16K47/02 , Y10T137/0324 , Y10T137/0396 , Y10T137/7761 , Y10T137/7762 , Y10T137/7842 , Y10T137/86389 , Y10T137/86397 , Y10T137/86461
摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.
摘要翻译：无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从通过调节控制信号Sc进行电 - 气转换。

78. 发明授权

US08648393B2 Transistor and semiconductor device 有权
标题翻译：晶体管和半导体器件
公开(公告)号：US08648393B2
公开(公告)日：2014-02-11
申请号：US13372159
申请日：2012-02-13
申请人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
发明人： Tadahiro Ohmi , Akinobu Teramoto , Rihito Kuroda
IPC分类号： H01L27/148
CPC分类号： H01L27/1203 , H01L21/28202 , H01L29/518 , H01L29/78654 , H01L29/78696
摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.
摘要翻译：累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

79. 发明授权

US08575023B2 Contact formation method, semiconductor device manufacturing method, and semiconductor device 有权
标题翻译：接触形成方法，半导体器件制造方法和半导体器件
公开(公告)号：US08575023B2
公开(公告)日：2013-11-05
申请号：US13126249
申请日：2009-10-23
申请人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
发明人： Tadahiro Ohmi , Akinobu Teramoto , Tatsunori Isogai , Hiroaki Tanaka
IPC分类号： H01L21/52
CPC分类号： H01L21/823814 , H01L21/28079 , H01L21/28518 , H01L21/823835 , H01L27/092 , H01L29/41733 , H01L29/458 , H01L29/4958 , H01L29/66772 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
摘要翻译：提供了实现低电阻率的接触的半导体器件制造方法。在与半导体接触的第一金属层被用于防止氧化的第二金属层覆盖的状态下，仅将第一金属层硅化以形成不混合氧的硅化物层。作为第一金属层的材料，使用与半导体具有预定值的功函数差的金属。作为第二金属层的材料，使用在退火温度下不与第一金属层反应的金属。

80. 发明授权

US08465719B2 Silicon carbide substrate, semiconductor device, wiring substrate, and silicon carbide manufacturing method 有权
标题翻译：碳化硅衬底，半导体器件，布线衬底和碳化硅制造方法
公开(公告)号：US08465719B2
公开(公告)日：2013-06-18
申请号：US12425247
申请日：2009-04-16
申请人： Tadahiro Ohmi , Akinobu Teramoto , Sumio Sano , Fusao Fujita
发明人： Tadahiro Ohmi , Akinobu Teramoto , Sumio Sano , Fusao Fujita
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C23C16/01 , C23C16/56 , H01L23/49866 , H01L2924/0002 , H01L2924/3011 , H05K1/024 , H05K1/0306 , H05K3/0011 , H05K2203/1105 , H01L2924/00
摘要： A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.
摘要翻译：在20GHz时，碳化硅衬底具有等于或小于2.0dB / mm的高频损耗有效地安装和操作电子元件。将碳化硅衬底在2000℃或更高温度下加热至20GHz时降低至2.0dB / mm以下的高频损耗。此外，通过CVD制造碳化硅衬底，而不将氮气流入加热器，能够将高频损耗降低到2.0dB / mm以下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式