专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US08641823B2 Reactor designs for use in ammonothermal growth of group-III nitride crystals 有权
标题翻译：用于III族氮化物晶体的氨热生长的反应器设计
公开(公告)号：US08641823B2
公开(公告)日：2014-02-04
申请号：US13128083
申请日：2009-11-04
申请人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
发明人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
IPC分类号： C30B7/10 , C30B29/40 , B01D9/00
CPC分类号： C30B7/105 , B01D9/0013 , B01D9/0031 , C30B7/10 , C30B29/40 , C30B29/403 , H01L21/67109 , Y10T117/1096 , Y10T428/24355
摘要： Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.
摘要翻译：用于III族氮化物晶体的氨热生长的反应器设计。内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

72. 发明授权

US08624140B2 Key switch and keyboard 有权
标题翻译：钥匙开关和键盘
公开(公告)号：US08624140B2
公开(公告)日：2014-01-07
申请号：US11822840
申请日：2007-07-10
申请人： Takeshi Nishino , Junichi Maruyama , Shuji Nakamura
发明人： Takeshi Nishino , Junichi Maruyama , Shuji Nakamura
IPC分类号： H01H13/06
CPC分类号： H01H3/122 , H01H13/702 , H01H2209/082 , H01H2219/014 , H01H2219/064 , H01H2221/07 , H01H2223/002
摘要： A key switch preferably used for a keyboard as an input device in electronic equipment. The key switch includes a base section; a key top disposed above the base section; a pair of link members interlocked to each other to support and direct the key top in a vertical direction relative to the base section; a switch member including a contact section capable of opening and closing in response to a vertical movement of the key top; and a biasing member capable of applying an elastic biasing force in a vertically upward direction to the key top. The key switch further includes a protection member disposed and inserted between the base section and the key top at a position where the protection member surrounds the pair of link members, the contact section and the biasing member. The protection member is elastically deformed to follow the vertical movement of the key top, and protects the pair of link members, the contact section and the biasing member from penetration of foreign matter.
摘要翻译：一种键盘开关，优选用于键盘作为电子设备中的输入装置。钥匙开关包括基座部分; 位于基部上方的键顶; 一对连杆构件彼此互锁，以相对于基部在垂直方向上支撑和引导键顶; 开关构件，其包括响应于所述键顶的垂直移动而能够打开和关闭的接触部; 以及能够向键顶向垂直向上方向施加弹性偏压力的偏置构件。钥匙开关还包括保护构件，该保护构件设置并插入在基部和键顶之间的保护构件围绕该对连杆构件，接触部分和偏置构件的位置处。保护构件弹性变形以跟随键顶的垂直运动，并且保护一对连杆构件，接触部分和偏压构件不会渗透异物。

73. 发明授权

US08592802B2 (Al, In, Ga, B)N device structures on a patterned substrate 有权
标题翻译：（Al，In，Ga，B）N个器件结构
公开(公告)号：US08592802B2
公开(公告)日：2013-11-26
申请号：US13454321
申请日：2012-04-24
申请人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
发明人： Michael Iza , Hitoshi Sato , Eu Jin Hwang , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/22
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1-xN and InyGa1-yN where 0
摘要翻译：在图案化衬底上的氮化物发光二极管，包括具有In x Ga 1-x N和In y Ga 1-y N的交替层的至少两个周期的氮化物中间层，其中0

74. 发明授权

US08541794B2 Nitride semiconductor light-emitting devices 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08541794B2
公开(公告)日：2013-09-24
申请号：US12570907
申请日：2009-09-30
申请人： Shinichi Nagahama , Masayuki Senoh , Shuji Nakamura
发明人： Shinichi Nagahama , Masayuki Senoh , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L2924/0002 , H01S5/3054 , H01S5/3216 , H01S5/32341 , H01S2301/173 , H01L2924/00
摘要： A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
摘要翻译：包括发光器件的氮化物半导体器件包括具有n型导电性的一个或多个氮化物半导体层的n型区域，具有p型导电性的一个或多个氮化物半导体层的p型区域和在p型区域之间的有源层， n型区域和p型区域。在这样的装置中，提供了包括分别具有不同成分的氮化物半导体的第一层和第二层的超晶格层。超晶格结构使得器件的工作电流和电压降低，从而实现更有效的器件。

75. 发明授权

US08541788B2 LED with current confinement structure and surface roughening 有权
标题翻译： LED具有电流限制结构和表面粗糙化
公开(公告)号：US08541788B2
公开(公告)日：2013-09-24
申请号：US12581759
申请日：2009-10-19
申请人： Steven P. Denbaars , Shuji Nakamura , Max Batres
发明人： Steven P. Denbaars , Shuji Nakamura , Max Batres
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.
摘要翻译：具有在二极管的顶表面的部分上的欧姆接触的垂直取向的发光二极管和与二极管的发光区相邻的反射层。该发光二极管包括限制结构。约束结构可以是反射层中通常在顶部欧姆接触下方的开口，其限定反射层和二极管的发光区域之间的非接触区域，以促进除非接触之外的电流流动面积又减少欧姆接触下方的发光复合数，并增加不在所述欧姆接触下方的区域中的发光复合数。 LED可以包括粗糙化的发射表面以进一步增强光提取。

76. 发明申请

US20130215921A1 (Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE 有权
标题翻译：（Al，Ga，In）N二极管激光器在降低温度下制成
公开(公告)号：US20130215921A1
公开(公告)日：2013-08-22
申请号：US13593340
申请日：2012-08-23
申请人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel A. Cohen , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01S5/30 , H01L33/32
CPC分类号： H01S5/3013 , B82Y20/00 , H01L21/02631 , H01L33/32 , H01S5/0215 , H01S5/0217 , H01S5/2009 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3213 , H01S5/3214 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.
摘要翻译：一种制造（Al，Ga，In）N激光二极管的方法，包括在第一温度下在生长衬底上沉积一个或多个III-N层，在第一温度下沉积含有铟的激光芯，温度，并且在抑制激光芯的退化的条件下执行所有随后的制造步骤，其中所述条件是比所述第二温度明显更低的温度。

77. 发明授权

US08450192B2 Growth of planar, non-polar, group-III nitride films 有权
标题翻译：平面，非极性，III族氮化物薄膜的生长
公开(公告)号：US08450192B2
公开(公告)日：2013-05-28
申请号：US12207407
申请日：2008-09-09
申请人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/0262
摘要： Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
摘要翻译：描述了平面，非极性，III族氮化物膜的生长方法。所得到的膜适合于通过各种生长技术的后续装置再生长。

78. 发明授权

US08402212B2 Storage system and management method of its storage medium 有权
标题翻译：其存储介质的存储系统和管理方法
公开(公告)号：US08402212B2
公开(公告)日：2013-03-19
申请号：US12105093
申请日：2008-04-17
申请人： Shuji Nakamura , Makio Mizuno , Katsuya Tanaka
发明人： Shuji Nakamura , Makio Mizuno , Katsuya Tanaka
IPC分类号： G06F13/00
CPC分类号： G06F3/0635 , G06F3/0617 , G06F3/067 , G06F3/0689 , G06F11/201 , G06F11/2056 , G06F11/2092
摘要： High availability is provided in a storage system that offers expandability more inexpensively. Provided is a storage system including multiple expanders to be connected to multiple storage mediums, multiple cascades connected respectively to a prescribed number of expanders among the multiple expanders, and multiple control units for respectively controlling the multiple cascades. One end of the multiple cascades is connected with an inter-cascade link, and the inter-cascade link has a logically connected state and a logically disconnected state.
摘要翻译：在可更便宜地提供可扩展性的存储系统中提供高可用性。提供了一种存储系统，包括要连接到多个存储介质的多个扩展器，分别连接到多个扩展器中的规定数量的扩展器的多个级联，以及用于分别控制多个级联的多个控制单元。多个级联的一端与级联链路相连，级联链路具有逻辑连接状态和逻辑断开状态。

79. 发明授权

US08368523B2 Collision detection sensor for vehicle 有权
公开(公告)号：US08368523B2
公开(公告)日：2013-02-05
申请号：US12218072
申请日：2008-07-10
申请人： Hisashi Takahashi , Shuji Nakamura
发明人： Hisashi Takahashi , Shuji Nakamura
IPC分类号： B60Q1/00
CPC分类号： B60R19/483 , B60R21/0136
摘要： A collision detection sensor includes an absorber, a chamber member, a pressure sensor, and a collision detection circuit. The absorber is deformed with a collision to absorb collision impact force. The absorber is located in a vehicle bumper and located in front of a bumper reinforcement in a vehicle front-rear direction. The chamber member defines a chamber room therein. The chamber member is located in the bumper and located in front of the bumper reinforcement in the vehicle front-rear direction. The pressure sensor detects pressure in the chamber room. The collision detection circuit detects the collision based on the detected pressure. A front end of the absorber is located further away from the bumper reinforcement than a front end of the chamber member in the vehicle front-rear direction.

80. 发明申请

US20130022528A1 GALLIUM NITRIDE BULK CRYSTALS AND THEIR GROWTH METHOD 审中-公开
标题翻译：氮化钾块状晶体及其生长方法
公开(公告)号：US20130022528A1
公开(公告)日：2013-01-24
申请号：US13592750
申请日：2012-08-23
申请人： Tadao Hashimoto , Shuji Nakamura
发明人： Tadao Hashimoto , Shuji Nakamura
IPC分类号： C30B7/10 , C01B21/06
CPC分类号： C30B29/406 , C30B7/10
摘要： A gallium nitride crystal with a polyhedron shape having exposed {10-10} m-planes and an exposed (000-1) N-polar c-plane, wherein a surface area of the exposed (000-1) N-polar c-plane is more than 10 mm2 and a total surface area of the exposed {10-10} m-planes is larger than half of the surface area of (000-1) N-polar c-plane. The GaN bulk crystals were grown by an ammonothermal method with a higher temperature and temperature difference than is used conventionally, using a high-pressure vessel with an upper region and a lower region. The temperature of the lower region is at or above 550° C., the temperature of the upper region is set at or above 500° C., and the temperature difference between the lower and upper regions is maintained at or above 30° C. GaN seed crystals having a longest dimension along the c-axis and exposed large area m-planes are used.
摘要翻译：具有暴露的{10-10} m面和暴露（000-1）N极c面的多面体形状的氮化镓晶体，其中暴露（000-1）N-极性c-面的表面积，平面大于10平方毫米，暴露的{10-10} m面的总表面积大于（000-1）N极C面的表面积的一半。通过使用具有上部区域和下部区域的高压容器，通过与常规使用的温度和温度差更高的氨热法生长GaN本体晶体。下部区域的温度为550℃以上，上部区域的温度为500℃以上，下部和上部区域之间的温度差保持在30℃以上。使用沿着c轴具有最长尺寸和暴露的大面积m面的GaN晶种。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式