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    • 76. 发明授权
    • Narrow top pole of a write element
    • 写元件的窄顶极
    • US06788496B2
    • 2004-09-07
    • US09934816
    • 2001-08-22
    • Charles H. TolmanNurul Amin
    • Charles H. TolmanNurul Amin
    • G11B5147
    • G11B5/3163G11B5/3116
    • In a method of manufacturing a top pole of a write element for use in a disc drive storage system, a first trench is formed on a top surface of a bottom pole, the first trench includes a first opening defined by opposing first side walls and an exposed portion of the top surface located therebetween. Next, a second trench is formed within the first trench. The second trench includes a second opening defined by opposing second side walls formed adjacent the first side walls and a gap member formed on the exposed portion of the top surface of the bottom pole between the second side walls. Finally, a top pole is formed in the second opening, which is narrower than the first opening.
    • 在制造用于盘驱动存储系统的写元件的顶极的方法中,第一沟槽形成在底极的顶表面上,第一沟槽包括由相对的第一侧壁限定的第一开口和 顶表面的暴露部分位于它们之间。 接下来,在第一沟槽内形成第二沟槽。 第二沟槽包括由邻近第一侧壁形成的相对的第二侧壁限定的第二开口和形成在第二侧壁之间的底极顶表面的暴露部分上的间隙构件。 最后,在比第一开口窄的第二开口中形成顶极。
    • 80. 发明授权
    • Method for aligning thin film head pole tips
    • 薄膜头极尖对齐方法
    • US5084957A
    • 1992-02-04
    • US609921
    • 1990-11-06
    • Nurul AminJohn BortinsBeat G. KeelYing D. Yan
    • Nurul AminJohn BortinsBeat G. KeelYing D. Yan
    • G11B5/127G11B5/31
    • G11B5/1278G11B5/3116G11B5/3163Y10T29/49044Y10T29/49064
    • A thin film magnetic read/write head is manufactured using Al.sub.2 O.sub.3 dams. The Al.sub.2 O.sub.3 dams are formed using a sacrificial layer which is deposited upon a bottom pole layer. An Al.sub.2 O.sub.3 layer is deposited over the sacrificial layer. When the sacrificial layer is removed, the Al.sub.2 O.sub.3 layer forms dams between which a top pole piece is deposited. The sacrificial layer is removed using lapping and a selected chemical etch; partial lapping or chemical etch followed by chemical etch of the sacrificial layer which lifts-off overlying Al.sub.2 O.sub.3 ; depositing photoresist dams and chemically etching the encapsulation layer and the sacrificial layer; or removal through physical or thermal shock of the Al.sub.2 O.sub.3 layer sputtered at zero bias followed by a selective chemical etch of the sacrificial layer.
    • 使用Al2O3坝制造薄膜磁读/写头。 使用沉积在底极层上的牺牲层来形成Al 2 O 3坝。 在牺牲层上沉积Al 2 O 3层。 当牺牲层被去除时,Al 2 O 3层形成在其上沉积顶极片之间的堤坝。 使用研磨和选择的化学蚀刻去除牺牲层; 部分研磨或化学蚀刻,然后是上覆Al2O3的牺牲层的化学蚀刻; 沉积光刻胶坝并化学蚀刻封装层和牺牲层; 或通过在零偏压下溅射的Al 2 O 3层的物理或热冲击进行去除,随后对牺牲层进行选择性化学蚀刻。