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71. 发明授权

US07923269B2 Light emitting device and manufacturing method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07923269B2
公开(公告)日：2011-04-12
申请号：US11276464
申请日：2006-03-01
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L21/00
CPC分类号： H01L51/5012 , H01L21/67155 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L51/0025 , H01L51/5048 , H01L51/5088 , H01L51/5221 , H01L51/5237 , H01L51/5246 , H01L51/5253 , H01L51/56
摘要： The concentration of oxygen, which causes problems such as decreases in brightness and dark spots through degradation of electrode materials, is lowered in an organic light emitting element having a layer made from an organic compound between a cathode and an anode, and in a light emitting device structured using the organic light emitting element. The average concentration of impurities contained in a layer made from an organic compound used in older to form an organic light emitting element having layers such as a hole injecting layer, a hole transporting layer, a light emitting layer, an electron transporting layer, and an electron injecting layer, is reduced to 5×1019/cm2 or less, preferably equal to or less than 1×1019/cm2, by removing the impurities with the present invention. Formation apparatuses are structured as stated in the specification in order to reduce the impurities in the organic compounds forming the organic light emitting elements.
摘要翻译：在具有由阴极和阳极之间的有机化合物制成的层的有机发光元件和发光的有机发光元件中，通过降低电极材料而导致诸如亮度和暗斑的降低等问题的氧浓度降低使用有机发光元件构造的器件。为了形成具有空穴注入层，空穴传输层，发光层，电子传输层等的层的有机发光元件，使用由有机化合物制成的层中所含有的杂质的平均浓度，通过除去本发明的杂质，将电子注入层减少到5×10 19 / cm 2以下，优选为1×10 19 / cm 2以下。为了减少形成有机发光元件的有机化合物中的杂质，形成装置按说明书所述进行结构化。

72. 发明授权

US07915611B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US07915611B2
公开(公告)日：2011-03-29
申请号：US12270425
申请日：2008-11-13
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L29/10 , H01L31/036 , H01L31/00 , H02N6/00
CPC分类号： H01L31/03685 , H01L31/02008 , H01L31/03762 , H01L31/0687 , H01L31/0725 , H01L31/1892 , H01L2224/73253 , H01L2924/12044 , Y02E10/544 , Y02E10/545 , Y02E10/548 , Y02P70/521 , H01L2924/00
摘要： In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 μm or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.
摘要翻译：为了在层叠型光电转换元件中形成上层单电池和下层电池之间的金属薄膜，硅化物膜等，还需要形成薄膜的工序。因此，出现诸如光电转换装置的生产率下降的问题。包括厚度为10μm以下的单晶半导体层作为光电转换层的第一单元电池和设置在第一单元上的非单晶半导体层作为光电转换层的第二单位电池至少包括，并且导电簇分散在单元电池之间。导电簇位于下层单元电池和上层单元电池之间以形成欧姆接触; 因此，电流在两个单元电池之间流动。

73. 发明授权

US07903229B2 Display device and method of fabricating the same 有权
公开(公告)号：US07903229B2
公开(公告)日：2011-03-08
申请号：US12264641
申请日：2008-11-04
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/13
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.

74. 发明授权

US07888681B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07888681B2
公开(公告)日：2011-02-15
申请号：US12222672
申请日：2008-08-14
申请人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
发明人： Shunpei Yamazaki , Yasuyuki Arai , Yukie Suzuki , Yoshiyuki Kurokawa
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译：证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。

75. 发明授权

US07781770B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07781770B2
公开(公告)日：2010-08-24
申请号：US12485958
申请日：2009-06-17
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L29/04 , G02F1/133
CPC分类号： H01L27/124 , G02F1/133553 , G02F1/134336 , G02F1/13439 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/133302 , G02F2001/136295 , G02F2201/123 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02686 , H01L21/3003 , H01L27/1214 , H01L27/1218 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1285 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L27/3279 , H01L29/66537 , H01L29/78621 , H01L29/78633 , H01L29/78678 , H01L29/78684 , H01L29/78696
摘要： An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.
摘要翻译：具有像素结构的有源矩阵显示装置，其中像素电极，栅极布线和源极布线适当地布置在像素部分中，以实现高数值孔径，而不增加掩模的数量或台阶。该器件包括在绝缘表面上的栅电极和源极布线，栅电极和源极布线上的第一绝缘层，第一绝缘膜上的半导体层，半导体膜上的第二绝缘层，栅极布线连接到第二绝缘层上的栅电极，用于将源极布线和半导体层连接在一起的连接电极和连接到半导体层的像素电极。

76. 发明授权

US07776663B2 Semiconductor display devices 有权
标题翻译：半导体显示设备
公开(公告)号：US07776663B2
公开(公告)日：2010-08-17
申请号：US12057994
申请日：2008-03-28
申请人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： H01L21/02
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/13452 , G02F2001/13613 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/1218 , H01L2221/68368 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.
摘要翻译：在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。半导体集成电路具有与显示装置的显示屏（即，矩阵电路）的一侧基本相同的长度，并且通过从另一基板剥离然后在第一基板上形成。另外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对，包括矩阵电路和外围驱动电路，并且至少具有与矩阵电路和外围驱动电路。隔板设置在第一和第二基板之间。在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。将液晶材料填充在由密封材料包围的区域内。在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

77. 发明授权

US07745991B2 Electro-optical device having an EL layer over a plurality of pixels 有权
标题翻译：在多个像素上具有EL层的电光装置
公开(公告)号：US07745991B2
公开(公告)日：2010-06-29
申请号：US10885953
申请日：2004-07-08
申请人： Shunpei Yamazaki , Kunitaka Yamamoto , Yasuyuki Arai
发明人： Shunpei Yamazaki , Kunitaka Yamamoto , Yasuyuki Arai
IPC分类号： H01J1/62
CPC分类号： H01L51/0005 , H01L27/12 , H01L27/1214 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78645 , H01L51/5228 , H01L51/524
摘要： The present invention aims to provide simple, high-speed processing for the formation of an EL layer by an ink-jet method. A method of manufacturing an electro-optical device having good operation performance and high reliability, and in particular, a method of manufacturing an EL display device, is provided. The present invention forms EL layers continuously across a plurality of pixels when the EL layers are formed by the ink-jet method. Specifically, with respect to m columns and n rows of pixel electrodes arranged in a matrix state, the EL layers are formed so as to form stripes with respect to one certain selected row or one column. The EL layers may also be formed having an oblong shape or a rectangular shape with respect to each pixel electrode.
摘要翻译：本发明旨在通过喷墨法提供用于形成EL层的简单的高速处理。提供了具有良好的操作性能和高可靠性的电光装置的制造方法，特别是制造EL显示装置的方法。当通过喷墨法形成EL层时，本发明在多个像素上连续地形成EL层。具体而言，相对于以矩阵状排列的m列，n行的像素电极，形成EL层，以形成相对于一定的一行或一列的条纹。 EL层也可以相对于每个像素电极形成为长方形或矩形。

78. 发明授权

US07723725B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07723725B2
公开(公告)日：2010-05-25
申请号：US11649315
申请日：2007-01-03
申请人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
发明人： Shunpei Yamazaki , Satoshi Murakami , Yasuyuki Arai
IPC分类号： H01L31/00
CPC分类号： H01L27/1248 , G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1203 , H01L27/1255 , H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14643 , H01L27/3262 , H01L27/3265 , H01L27/3272 , H01L29/66772 , H01L29/78633
摘要： There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obtained. In a semiconductor device comprising an active matrix circuit with an insulated gate field effect transistor having at least an active layer made of single crystalline semiconductor, an organic resin insulating layer is formed over the insulated gate field effect transistor, a storage capacitance is formed of a light shielding layer formed over the organic resin insulating layer, a dielectric layer formed to be in close contact with the light shielding layer, and a light reflecting electrode connected to the insulated gate field effect transistor.
摘要翻译：提供了一种有源矩阵型显示装置，其中显示装置由具有能够高速运行的绝缘栅极FET的驱动电路形成，并且即使每单位像素的像素电极的面积变小，足够的存储可以获得电容。在包括具有绝缘栅场效应晶体管的有源矩阵电路的半导体器件中，至少具有由单晶半导体制成的有源层，绝缘栅场效应晶体管上形成有机树脂绝缘层，存储电容由形成在有机树脂绝缘层上的遮光层，形成为与遮光层紧密接触的电介质层，以及连接到绝缘栅场效应晶体管的光反射电极。

79. 发明授权

US07652294B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07652294B2
公开(公告)日：2010-01-26
申请号：US12232310
申请日：2008-09-15
申请人： Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
发明人： Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
IPC分类号： H01L29/04
CPC分类号： H01L27/1222 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13458 , G02F1/136204 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/136231 , G02F2001/136295 , G02F2201/123 , G02F2202/103 , G02F2202/105 , G02F2202/28 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67225 , H01L21/67236 , H01L27/1218 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： A display device having a gate wiring including a first conductive material, an insulating film over the gate wiring, a semiconductor film over the insulating film, a source electrode and a drain electrode including a second conductive material formed over a source region and a drain region, and a pixel electrode including a transparent conductive film. The device includes a first terminal portion electrically connected to the gate wiring and having a first layer including a same material as the first conductive material and a second layer including a same material as the transparent conductive film. The device further includes a second terminal portion electrically connected to the source wiring and having a first layer including a same material as the second conductive material and a second layer including a same material as the transparent conductive film. An IC chip may be electrically connected to at least one of the first and second terminal portions.
摘要翻译：一种显示装置，其具有包括第一导电材料的栅极布线，栅极布线上的绝缘膜，绝缘膜上的半导体膜，源电极和漏电极，其包括在源区和漏区上形成的第二导电材料以及包括透明导电膜的像素电极。该器件包括电连接到栅极布线并具有包含与第一导电材料相同的材料的第一层的第一端子部分和与透明导电膜相同的材料的第二层。该装置还包括电连接到源极布线并具有包括与第二导电材料相同的材料的第一层的第二端子部分和包括与透明导电膜相同的材料的第二层。 IC芯片可以电连接到第一和第二端子部分中的至少一个。

80. 发明申请

US20090290082A1 Semiconductor Device and Fabrication Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090290082A1
公开(公告)日：2009-11-26
申请号：US12512173
申请日：2009-07-30
申请人： Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
发明人： Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
IPC分类号： G02F1/136 , H01L33/00 , H01L21/8234 , H01L21/336 , H01L29/786
CPC分类号： H01L29/78621 , G02F1/13306 , G02F1/133345 , G02F1/13394 , G02F1/134309 , G02F1/13454 , G02F1/136227 , G02F1/13624 , G02F1/136277 , G02F1/136286 , G02F1/1368 , G02F2001/13396 , G02F2001/13398 , G02F2001/136245 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02208 , H01L21/02266 , H01L21/02274 , H01L21/02422 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02631 , H01L21/02667 , H01L21/0273 , H01L21/3065 , H01L21/3081 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1248 , H01L27/1251 , H01L27/1274 , H01L27/1288 , H01L29/167 , H01L29/66742 , H01L29/66757 , H01L29/7833 , H01L29/78672 , H01L29/78675 , Y10S438/919
摘要： A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
摘要翻译：驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，LDD结构。像素TFT具有LDD结构。设置在像素单元中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在层间绝缘膜设置在与其紧密接触的绝缘膜上。这些处理步骤使用6到8张照片掩模。

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