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71. 发明申请

US20090233987A1 Method and apparatus for drug delivery to tissue or organ for transplant 审中-公开
标题翻译：用于药物递送至组织或器官移植的方法和装置
公开(公告)号：US20090233987A1
公开(公告)日：2009-09-17
申请号：US11878934
申请日：2007-07-27
申请人： Minoru Obara , Mitsuhiro Terakawa , Shunichi Sato , Daizoh Saitoh
发明人： Minoru Obara , Mitsuhiro Terakawa , Shunichi Sato , Daizoh Saitoh
IPC分类号： A61K31/7088 , A01N1/02 , A61N5/067
CPC分类号： A61K31/7088 , A01N1/02 , A01N1/0226 , A01N1/0294 , A61N5/0601 , A61N2005/067
摘要： It is intended to provide a method for delivering a drug such as a gene to a tissue or organ for transplant such as skin by use of a laser-induced stress wave (LISW) and thereby producing a high-performance tissue or organ for transplant with a high survival ability and to provide an apparatus for carrying out the method as well as a high-performance tissue or organ for transplant produced by the method. The present invention provides a method for delivering a drug to a graft of a tissue or organ for transplant, comprising applying a drug to a graft of a tissue or organ for transplant and applying, to the graft, a stress wave induced by the laser light irradiation of a light absorber provided in proximity to the graft, wherein the light absorber is made of a substance capable of absorbing a laser light and generating a stress wave.
摘要翻译：旨在提供一种通过使用激光诱导的应激波（LISW）将诸如基因的药物递送到用于移植的组织或器官如皮肤的方法，从而产生用于移植的高性能组织或器官，高生存能力，并提供用于实施该方法的装置以及通过该方法产生的用于移植的高性能组织或器官。本发明提供了将药物递送至用于移植的组织或器官的移植物的方法，包括将药物施用于组织或器官的移植物移植并向移植物施加由激光引起的应激波照射靠近移植物的光吸收体，其中光吸收体由能够吸收激光并产生应力波的物质制成。

72. 发明授权

US07590159B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07590159B2
公开(公告)日：2009-09-15
申请号：US11759615
申请日：2007-06-07
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

73. 发明授权

US07518161B2 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
标题翻译：半导体发光器件，表面发射激光二极管及其制造装置，制造方法，光模块和光通信系统
公开(公告)号：US07518161B2
公开(公告)日：2009-04-14
申请号：US11647270
申请日：2006-12-29
申请人： Takashi Takahashi , Shunichi Sato
发明人： Takashi Takahashi , Shunichi Sato
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/0425 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2063 , H01S5/2231 , H01S5/32366 , H01S5/34306 , H01S5/34333 , H01S5/34366 , H01S5/34386 , H01S5/423 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/025 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.
摘要翻译：半导体发光器件具有在衬底和含有氮的有源层之间包含Al的半导体层，其中在生长所述有源层之前从生长室中除去Al和氧，并且与Al一起掺入所述有源层中的氧浓度被设定为使得所述半导体发光装置能够在室温下进行连续激光振荡的电平。

74. 发明申请

US20090022199A1 SURFACE LIGHT EMITTING LASER ELEMENT, SURFACE LIGHT EMITTING LASER ARRAY PROVIDED WITH IT, ELECTRO-PHOTOGRAPHIC SYSTEM AND OPTICAL COMMUNICATION SYSTEM 有权
标题翻译：表面发光激光元件，表面发光激光阵列，电子照相系统和光通信系统
公开(公告)号：US20090022199A1
公开(公告)日：2009-01-22
申请号：US11815050
申请日：2006-11-27
申请人： Naoto Jikutani , Shunichi Sato
发明人： Naoto Jikutani , Shunichi Sato
IPC分类号： H01S5/183 , H01S3/08
CPC分类号： H01S5/18 , B41J2/45 , B82Y20/00 , H01S5/0014 , H01S5/0655 , H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18333 , H01S5/18358 , H01S5/18369 , H01S5/18391 , H01S5/3432 , H01S5/423 , H01S2301/166
摘要： A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.
摘要翻译：表面发射激光器件包括有源层，设置在有源层的两侧的空腔间隔层，设置在空腔间隔层的各侧的反射层，反射在有源层中振荡的振荡光的反射层和选择性氧化层。选择氧化层设置在反射层中的与振荡光的电场的驻波分布的第四周期节点相对应的位置和与前述第四周期节点相邻的反射层中的位置在远离的方向来自有源层，对应于振荡光的电场的驻波分布的反节点。

75. 发明申请

US20080056321A1 Surface emitting laser element, surface emitting laser array, optical scanning apparatus, image forming apparatus, and optical communication system 有权
标题翻译：表面发射激光元件，表面发射激光器阵列，光学扫描装置，成像装置和光通信系统
公开(公告)号：US20080056321A1
公开(公告)日：2008-03-06
申请号：US11895832
申请日：2007-08-27
申请人： Hiroshi Motomura , Naoto Jikutani , Shunichi Sato
发明人： Hiroshi Motomura , Naoto Jikutani , Shunichi Sato
IPC分类号： H01S5/18 , B41J27/00
CPC分类号： B41J2/473 , B41J2/45 , G02B6/4249 , H01S5/0207 , H01S5/02461 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S5/423
摘要： A vertical cavity surface emitting laser element is disclosed that includes a substrate, a first semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances, a resonator region including an active layer, and a second semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances. At least one pair of layers of the first semiconductor multilayer reflector and/or the second semiconductor multilayer reflector includes a first layer with a lower thermal resistance that has an optical thickness greater than ¼ of the oscillation wavelength and a second layer with a higher thermal resistance that has an optical thickness less than ¼ of the oscillation wavelength. The sum of the optical thickness of the first layer and the optical thickness of the second layer is equal to m/4 times the oscillation wavelength (m: even number≧2).
摘要翻译：公开了一种垂直腔表面发射激光器元件，其包括衬底，包括具有不同折射率和热阻的多对层的第一半导体多层反射器，包括有源层的谐振器区域和包括多个对的第二半导体多层反射器具有不同折射率和热阻的层。第一半导体多层反射器和/或第二半导体多层反射器的至少一对层包括具有大于振荡波长的1/4的光学厚度的具有较低热阻的第一层和具有较高热阻的第二层其光学厚度小于振荡波长的1/4。第一层的光学厚度和第二层的光学厚度之和等于振荡波长的m / 4倍（m：偶数> = 2）。

76. 发明申请

US20080043796A1 SURFACE-EMISSION LASER DIODE OPERABLE IN THE WAVELENGTH BAND OF 1.1-1.7 MICROMETERS AND OPTICAL TELECOMMUNICATION SYSTEM USING SUCH A LASER DIODE 有权
标题翻译：表面发射激光二极管在使用这种激光二极管的1.1-1.7微米波段和光电信系统的波长带
公开(公告)号：US20080043796A1
公开(公告)日：2008-02-21
申请号：US11759615
申请日：2007-06-07
申请人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto JIKUTANI , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/125 , G02B5/18
CPC分类号： G02B5/285 , B82Y20/00 , G02B5/0833 , G02B6/4202 , G02B6/4214 , G02B6/4246 , G02B6/43 , H01L2224/48091 , H01L2924/12044 , H01S5/0014 , H01S5/005 , H01S5/02248 , H01S5/02284 , H01S5/02296 , H01S5/0262 , H01S5/0264 , H01S5/0683 , H01S5/18308 , H01S5/18311 , H01S5/18358 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/173 , H01L2924/00014 , H01L2924/00
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

77. 发明授权

US07245647B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode 有权
标题翻译：表面发射激光二极管可在1.1-1.7μm的波长范围内工作，光通信系统采用这种激光二极管
公开(公告)号：US07245647B2
公开(公告)日：2007-07-17
申请号：US10697035
申请日：2003-10-31
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
IPC分类号： H01S5/00 , H01S3/08
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/3821 , G02B6/4201 , G02B6/421 , G02B6/4249 , H01L2224/48091 , H01S5/0071 , H01S5/02284 , H01S5/0262 , H01S5/0683 , H01S5/18313 , H01S5/18358 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3215 , H01S5/34306 , H01S5/423 , H01S2301/176 , H01S2301/18 , H01S2304/04 , H01L2924/00014
摘要： A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.
摘要翻译：表面发射激光二极管包括调谐到波长为1.1μm或更长的分布布拉格反射器，其中分布布拉格反射器包括低折射率层和高折射率层的交替重复，其中异相缓冲层具有插入其间的中间折射率，厚度在5-50nm的范围内。

78. 发明授权

US07157907B2 Non-contact rotation angle detecting sensor 有权
标题翻译：非接触式旋转角度检测传感器
公开(公告)号：US07157907B2
公开(公告)日：2007-01-02
申请号：US11261547
申请日：2005-10-31
申请人： Shunichi Sato
发明人： Shunichi Sato
IPC分类号： G01B7/30
CPC分类号： G01D5/145
摘要： A stationary yoke surrounds an outer peripheral surface of a ring-shaped permanent magnet in a certain distance. The ring-shaped permanent magnet is fixed to a rotor and has two poles of N, S poles in a diameter direction. The stationary yoke includes a first outside yoke and a second outside yoke overlapped in an axial direction and a hole element is disposed in a gap of the first outside yoke. An axial height of the first outside yoke changes along the circumferential direction and a height of the second outside yoke has a complementary relation with the height of the first outside yoke, and the first outside yoke and the second outside yoke are overlapped in a certain clearance. A ratio of an amount of the magnetic flux passing through the gap to an amount of the magnetic flux not passing through the gap changes with rotation of the ring-shaped permanent magnet and further, the change of the height causes a change in the magnetic flux amount flowing in the first outside yoke, thereby improving linearity of an output of a hole element.
摘要翻译：固定磁轭围绕一定距离的环形永久磁铁的外周面。环形永磁体固定在转子上，并具有直径方向上的N，S极的两极。固定轭包括在轴向上重叠的第一外轭和第二外磁轭，并且孔元件设置在第一外磁轭的间隙中。第一外轭的轴向高度沿周向变化，第二外轭的高度与第一外轭的高度成互补关系，第一外轭和第二外轭以一定间隙重叠。通过间隙的磁通量与未通过间隙的磁通量的比例随环形永磁体的旋转而变化，此外，高度的变化导致磁通量的变化在第一外轭中流动的量，从而提高孔元件的输出的线性。

79. 发明申请

US20060261352A1 Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system 有权
公开(公告)号：US20060261352A1
公开(公告)日：2006-11-23
申请号：US11404876
申请日：2006-04-17
申请人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
发明人： Takashi Takahashi , Morimasa Kaminishi , Shunichi Sato , Akihiro Itoh , Naoto Jikutani
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/10 , H01S5/0014 , H01S5/02284 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18394 , H01S5/3211 , H01S5/32366 , H01S5/343 , H01S5/34306 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

80. 发明授权

US06563851B1 Laser diode having an active layer containing N and operable in a 0.6 &mgr;m wavelength band 失效
标题翻译：激光二极管具有含有N并且在0.6μm波长带中可操作的有源层
公开(公告)号：US06563851B1
公开(公告)日：2003-05-13
申请号：US09289955
申请日：1999-04-13
申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi
发明人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2063 , H01S5/32358 , H01S5/34 , H01S5/3403 , H01S5/34326 , H01S5/3436
摘要： An optical semiconductor device operable in a 0.6 &mgr;m band includes an active layer of GaInNP sandwiched by a pair of GaInP layers each having a thickness of about 2 molecular layers or less.
摘要翻译：在0.6μm波段中可操作的光半导体器件包括由一对GaInP层夹持的GaInNP有源层，每个GaInP层的厚度约为2分子层或更小。

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