会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 79. 发明授权
    • Oscillator with little deterioration capable of outputting clock pulses with target frequency
    • 具有极小劣化的振荡器能够输出具有目标频率的时钟脉冲
    • US08120437B2
    • 2012-02-21
    • US12723776
    • 2010-03-15
    • Toru Watanabe
    • Toru Watanabe
    • H03B5/32
    • H03L5/00H03B5/364
    • An oscillator includes: a vibrator having a first electrode and a second electrode disposed with a gap with the first electrode; a reference voltage supply circuit adapted to supply a reference voltage; and a voltage adjustment circuit having a step-up circuit operating in response to input of clock pulses and adapted to convert the reference voltage into a voltage of a predetermined level and to output the voltage of the predetermined level, wherein the vibrator is configured so as to apply the voltage of the predetermined level, which is output from the voltage adjustment circuit, between the first electrode and the second electrode, and the clock pulses to be input into the step-up circuit are obtained using the vibrator as a source.
    • 振荡器包括:振子,具有第一电极和与第一电极间隔设置的第二电极; 参考电压供应电路,其适于提供参考电压; 以及电压调节电路,其具有响应于时钟脉冲的输入而工作的升压电路,并且适于将参考电压转换成预定电平的电压并输出预定电平的电压,其中所述振动器被配置为 将从电压调节电路输出的预定电平的电压施加在第一电极和第二电极之间,并且使用振动器作为源获得要输入到升压电路的时钟脉冲。
    • 80. 发明授权
    • MEMS resonator and manufacturing method of the same
    • MEMS谐振器及其制造方法相同
    • US07671430B2
    • 2010-03-02
    • US11928519
    • 2007-10-30
    • Shogo InabaAkira SatoToru WatanabeTakeshi Mori
    • Shogo InabaAkira SatoToru WatanabeTakeshi Mori
    • H01L21/66
    • H03H3/0073H03H9/1057Y10S977/721
    • A method is for manufacturing a microeletromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.
    • 一种用于制造具有半导体器件和形成在衬底上的微机电系统结构单元的微机械系统谐振器的方法。 该方法包括:使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。