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71. 发明申请

US20080093602A1 IMAGE DISPLAY UNIT AND METHOD FOR MANUFACUTRE THE SAME 有权
标题翻译：图像显示单元及其制造方法
公开(公告)号：US20080093602A1
公开(公告)日：2008-04-24
申请号：US11874955
申请日：2007-10-19
申请人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
发明人： Mieko Matsumura , Yoshiaki Toyota , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L33/00
CPC分类号： H01L29/4908 , G09G3/3233 , G09G2300/0842 , G09G2300/0861 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L29/41733 , H01L51/56
摘要： The present invention provides an image display unit, which can be manufactured in shorter time by designing a thin-film transistor, by which it is possible to reduce the number of processes of ion implantation and photolithographic processes. A gate electrode GT is designed in a laminated structure of a thin bottom layer metal film GMB and a top layer metal film GMT, and a top electrode of a storage capacitor Cst is designed to have only the bottom layer metal film GMB. Ion implanter for the bottom electrode of the storage capacitor Cst is passed through the thin bottom layer metal film GMB, and ion implantation is performed at the same time as the ion implantation of source-drain electrodes. The gate electrode of PMOSTFT has also only the bottom layer metal GMB, and the ion implantation for threshold adjustment is performed by using the same resist. By designing the thin-film transistor and the storage capacitor in such structure, one process each can be reduced in the photolithographic process and in the ion implantation process, and an active matrix substrate for an image display unit can be manufactured in shorter time and at lower cost.
摘要翻译：本发明提供了一种图像显示单元，其可以通过设计薄膜晶体管在较短时间内制造，由此可以减少离子注入和光刻工艺的处理次数。栅电极GT被设计成薄底层金属膜GMB和顶层金属膜GMT的层叠结构，并且存储电容器Cst的顶电极被设计为仅具有底层金属膜GMB。用于存储电容器Cst的底部电极的离子注入机通过薄的底层金属膜GMB，并且在与源极 - 漏极电极的离子注入同时进行离子注入。 PMOSTFT的栅极也仅具有底层金属GMB，并且通过使用相同的抗蚀剂来执行用于阈值调整的离子注入。通过在这种结构中设计薄膜晶体管和存储电容器，可以在光刻工艺和离子注入工艺中减少一个工艺，并且可以在更短的时间和更短的时间内制造用于图像显示单元的有源矩阵基板降低成本。

72. 发明申请

US20070092661A1 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US20070092661A1
公开(公告)日：2007-04-26
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： C09K19/00
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

73. 发明授权

US07202144B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07202144B2
公开(公告)日：2007-04-10
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L21/20
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

74. 发明申请

US20060267011A1 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20060267011A1
公开(公告)日：2006-11-30
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L31/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

75. 发明申请

US20060006391A1 Image display devices 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20060006391A1
公开(公告)日：2006-01-12
申请号：US11171184
申请日：2005-07-01
申请人： Mieko Matsumura , Mutsuko Hatano , Toshihiko Itoga , Eiji Oue
发明人： Mieko Matsumura , Mutsuko Hatano , Toshihiko Itoga , Eiji Oue
IPC分类号： H01L29/04 , H01L29/15 , H01L21/84
CPC分类号： H01L29/045 , H01L27/1285
摘要： To obtain a system-in-display with high performance and multifunction at low cost, high performance and reliability of a low temperature polysilicon thin film transistor is devised by terminating traps at a interface between a gate oxide film and a polycrystalline silicon film constituting a channel with fluorine. To maximize its effect, a material not governed by scattering due to potential barriers at grain boundaries, that is, a crystalline thin film approximately in a band shape having fewer grain boundaries that segmentalize the channel is used for the channel portion of the transistor. In this way, it is possible to realize the thin film transistor having both steep transfer characteristic and excellent resistance to hot carriers to unite high performance and reliability, construct various circuits that operate at low power and high speed on the same glass substrate as for pixel portions, and obtain the system-in-display having high performance and multifunction at low cost.
摘要翻译：为了以低成本获得具有高性能和多功能的系统显示器，通过在构成通道的栅极氧化物膜和多晶硅膜之间的界面处终止陷阱来设计低温多晶硅薄膜晶体管的高性能和可靠性与氟。为了使其效果最大化，晶体管的沟道部分使用由于晶界处的势垒而不受散射影响的材料，即，具有较小晶界的结晶薄膜，其具有较小的晶界分割。以这种方式，可以实现具有陡峭的传输特性和优异的耐热载流子电阻的薄膜晶体管，以结合高性能和可靠性，构造在与像素相同的玻璃基板上以低功率和高速度工作的各种电路并以低成本获得具有高性能和多功能的系统显示。

76. 发明申请

US20050170618A1 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US20050170618A1
公开(公告)日：2005-08-04
申请号：US11007188
申请日：2004-12-09
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： G02F1/1368 , C30B1/06 , G02F1/133 , H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μs。

77. 发明申请

US20050170572A1 Laser annealing apparatus and annealing method of semiconductor thin film using the same 有权
标题翻译：激光退火装置及使用其的半导体薄膜的退火方法
公开(公告)号：US20050170572A1
公开(公告)日：2005-08-04
申请号：US10986936
申请日：2004-11-15
申请人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
发明人： Mikio Hongo , Akio Yazaki , Mutsuko Hatano
IPC分类号： H01L21/20 , B23K26/073 , B23K26/08 , G02B27/09 , G02F1/13 , H01L21/268 , H01L21/77 , H01L21/00 , H01S3/13 , H01J1/52 , H01L21/84 , G01J5/02 , G21K1/00 , H01J3/00 , G02B5/00 , H01J5/18 , H01J29/46
CPC分类号： B23K26/0738 , B23K26/0853 , G02B27/0927 , G02B27/0966 , H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A laser beam temporally modulated in amplitude by a modulator and shaped into a long and narrow shape by a beam shaper is rotated around the optical axis of an image rotator inserted between the beam shaper and a substrate. Thus, the longitudinal direction of the laser beam having the long and narrow shape is rotated around the optical axis on the substrate. In order to perform annealing in a plurality of directions on the substrate, the laser beam shaped into the long and narrow shape is rotated on the substrate while a stage mounted with the substrate is moved only in two directions, that is, X- and Y-directions. In such a manner, the substrate can be scanned at a high speed with a continuous wave laser beam modulated temporally in amplitude and shaped into a long and narrow shape, without rotating the substrate. Thus, a semiconductor film can be annealed.
摘要翻译：通过调制器暂时调制振幅的激光束并通过光束整形器成形为长而窄的形状围绕插入在光束整形器和基板之间的图像旋转器的光轴旋转。因此，具有长而窄形状的激光束的纵向方向围绕基板上的光轴旋转。为了在基板上沿多个方向进行退火，将形成为长而窄的形状的激光束在基板上旋转，而安装有基板的台仅沿两个方向移动，即，X轴和Y轴方向以这样一种方式，可以用波长时间上调制并成形为长而窄的连续波激光束高速扫描基板，而不旋转基板。因此，半导体膜可以退火。

78. 发明授权

US06670936B1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US06670936B1
公开(公告)日：2003-12-30
申请号：US09582936
申请日：2000-07-07
申请人： Hajime Akimoto , Mutsuko Hatano
发明人： Hajime Akimoto , Mutsuko Hatano
IPC分类号： G09G336
CPC分类号： G09G3/3688 , G09G3/3648 , G09G3/3655
摘要： An object is to eliminate fixed pattern noise due to unevenness or variation of the threshold voltages in DA converters and buffer circuits, when forming a pixel portion integrated with a peripheral driver circuit, including the DA converters, by using polycrystalline Si TFT. For that purpose, a pixel common electrodes is provided independently for each of a signal line, and an output of the buffer circuit is connected to both the common electrode and the signal electrode through a switch. With this, the variation of the threshold voltages in the buffer circuits are cancelled between the common electrode and the signal electrode, thereby enabling to remove the above-mentioned fixed pattern noise therefrom.
摘要翻译：目的是通过使用多晶硅TFT来形成与包括DA转换器的外围驱动电路集成的像素部分时，由于DA转换器和缓冲电路中的阈值电压的不均匀性或变化而消除固定模式噪声。为此目的，对信号线各自独立地设置像素公共电极，并且缓冲电路的输出通过开关连接到公共电极和信号电极两者。由此，缓冲电路中的阈值电压的变化在公共电极和信号电极之间被取消，从而能够消除上述固定图案噪声。

79. 发明授权

US5729046A Superconducting device having pinning regions 失效
标题翻译：具有钉扎区域的超导装置
公开(公告)号：US5729046A
公开(公告)日：1998-03-17
申请号：US462356
申请日：1995-06-05
申请人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
发明人： Toshikazu Nishino , Ushio Kawabe , Yoshinobu Tarutani , Shinya Kominami , Toshiyuki Aida , Tokuumi Fukazawa , Mutsuko Hatano
IPC分类号： H01L39/22 , C01G1/00 , C01G3/00 , C23C14/08 , C30B29/22 , H01B12/00 , H01L39/24 , H01L39/00
CPC分类号： H01L39/2496 , H01L39/225 , H01L39/228 , H01L2924/0002 , Y10S505/70 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.
摘要翻译：超导装置包括具有超导体的结构的类型 - 正常导体（或半导体） - 超导体，以及在超导体之间具有超导弱连接部分的类型。构成超导装置的超导体由含有选自Ba，Sr，Ca，Mg和Ra中的至少一种元素的钙钛矿型和K2NiF4型结晶结构体的氧化物构成。选自La，Y，Ce，Sc，Sm，Eu，Er，Gd，Ho，Yb，Nd，Pr，Lu和Tb中的至少一种元素; 铜另外，超导体的晶体的c轴基本上垂直于流过该超导体的电流的方向。

80. 发明授权

US5550389A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US5550389A
公开(公告)日：1996-08-27
申请号：US171869
申请日：1993-12-22
申请人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
发明人： Toshikazu Nishino , Mutsuko Hatano , Haruhiro Hasegawa , Hideaki Nakane , Ushio Kawabe , Kazuo Saitoh , Mitsuo Suga , Kazumasa Takagi
IPC分类号： H01L39/14 , H01L29/06
CPC分类号： H01L39/145
摘要： A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and high operating speed characteristic according to the present invention is suitable for configuring a large-scale integrated circuit.
摘要翻译：通过使用超导体材料和半导体材料的组合来制造功耗低且工作速度高的超导装置。根据本发明的具有低功耗和高工作速度特性的超导装置适用于配置大规模集成电路。

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