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71. 发明授权

US06391791B1 Dry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and methods for the fabrication thereof 失效
标题翻译：干蚀刻方法和装置，光掩模及其制备方法，半导体电路及其制造方法
公开(公告)号：US06391791B1
公开(公告)日：2002-05-21
申请号：US09361159
申请日：1999-07-27
申请人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
发明人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
IPC分类号： H01L21302
CPC分类号： H01J37/3266 , G03F1/80 , H01J37/32743 , H01L21/32136
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a photomask by forming patterns to be transferred to a wafer on a photomask blank. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译：干蚀刻方法包括干法蚀刻作为含铬膜的金属薄膜的步骤，其特征在于，使用包括（a）反应离子蚀刻气体的混合气体作为蚀刻气体，其特征在于，含有含氧气体和含卤素气体，（b）在对金属薄膜进行干法蚀刻的工序中，向气体成分（a）中添加还原气体。干蚀刻方法允许通过在光掩模坯料上形成要转印到晶片上的图案来制造光掩模。光掩模又可用于制造半导体电路。该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。

72. 发明授权

US09106836B2 Imaging apparatus, control method for the same, and recording medium, where continuous shooting or single shooting is performed based on touch 有权
标题翻译：成像装置及其控制方法以及基于触摸执行连续拍摄或单次拍摄的记录介质
公开(公告)号：US09106836B2
公开(公告)日：2015-08-11
申请号：US13605786
申请日：2012-09-06
申请人： Satoshi Aoyama
发明人： Satoshi Aoyama
IPC分类号： H04N5/222 , H04N5/225 , H04N5/232 , H04N5/343 , H04N5/235
CPC分类号： H04N5/23293 , H04N5/23245 , H04N5/2356 , H04N5/343
摘要： A shooting target detection unit detects a main shooting target from a position where a touch-down operation is performed on a touch panel. A system control device causes a ranging control device and an exposure control device to perform AF processing and AE processing on the main shooting target. The system control device displays a continuous shooting switch near the touched position. The system control device performs continuous shooting if a user moves his/her finger to the continuous shooting switch and then performs a touch-up operation. Whereas, the system control device performs single shooting if the user performs the touch-up operation without moving his/her finger to the continuous shooting switch.
摘要翻译：拍摄目标检测单元从对触摸面板进行了向下操作的位置检测主拍摄目标。系统控制装置使测距控制装置和曝光控制装置对主拍摄对象进行AF处理和AE处理。系统控制装置在触摸位置附近显示连续拍摄开关。如果用户将他/她的手指移动到连续拍摄开关，则系统控制装置执行连续拍摄，然后执行翻页操作。而如果用户在不将他/她的手指移动到连续拍摄开关的情况下进行接触操作，则系统控制装置执行单次拍摄。

73. 发明授权

US08581171B2 Cyclic A/D converter, image sensor device, and method for generating digital signal from analog signal 有权
标题翻译：循环A / D转换器，图像传感器装置以及从模拟信号产生数字信号的方法
公开(公告)号：US08581171B2
公开(公告)日：2013-11-12
申请号：US13124319
申请日：2009-10-15
申请人： Shoji Kawahito , Jong-ho Park , Satoshi Aoyama , Keigo Isobe
发明人： Shoji Kawahito , Jong-ho Park , Satoshi Aoyama , Keigo Isobe
IPC分类号： H01L27/146
CPC分类号： H03M1/0695 , H03M1/123 , H03M1/403 , H04N5/3658 , H04N5/3745 , H04N5/378
摘要： A cyclic A/D converter which can reduce the number of reference voltages for D/A conversion is provided. The cyclic A/D converter (11) comprises a gain stage (15), an A/D converter circuit (17), a logic circuit (19), and a D/A converter circuit (21). In an operational action of the gain stage (15), an operational value (VOP) is generated by the use of an operational amplifier circuit (23) and capacitors (25, 27, 29). The gain stage (15) operates as receiving three kinds of voltage signal from the D/A converter circuit (21) by the switching of two kinds of voltage signal (VDA1, VDA2) to be applied to the capacitors (25, 27) in a switching circuit (31). That is, the D/A converter circuit (21) provides a voltage signal (VRH) to the capacitors (25, 27), in response to a value (D=2) of a digital signal (B0, B1), provides voltage signals (VRH, VRL) to the capacitors (25, 27), respectively, in response to a value (D=1) of the signal (B0, B1), and provides the voltage signal (VRL) to the capacitors (25, 27), in response to a value (D=0) of the signal (B0, B1).
摘要翻译：提供了可以减少用于D / A转换的参考电压数量的循环A / D转换器。循环A / D转换器（11）包括增益级（15），A / D转换器电路（17），逻辑电路（19）和D / A转换器电路（21）。在增益级（15）的操作动作中，通过使用运算放大器电路（23）和电容器（25,27,29）产生运算值（VOP）。增益级（15）通过切换要施加到电容器（25,27）的两种电压信号（VDA1，VDA2）来接收来自D / A转换器电路（21）的三种电压信号，开关电路（31）。也就是说，D / A转换器电路（21）响应于数字信号（B0，B1）的值（D = 2）向电容器（25,27）提供电压信号（VRH），提供电压分别响应信号（B0，B1）的值（D = 1）向电容器（25,27）输出信号（VRH，VRL），并将电压信号（VRL）提供给电容器（25,27）响应于信号（B0，B1）的值（D = 0）27）。

74. 发明授权

US07862643B2 Hydrogen separation membrane and fuel cell, and manufacturing method therefor 失效
标题翻译：氢分离膜和燃料电池及其制造方法
公开(公告)号：US07862643B2
公开(公告)日：2011-01-04
申请号：US11578582
申请日：2005-04-07
申请人： Satoshi Aoyama
发明人： Satoshi Aoyama
IPC分类号： B01D53/22
CPC分类号： C01B3/505 , B01D67/0072 , B01D67/0093 , B01D69/00 , B01D69/12 , B01D71/022 , B01D71/024 , B01D2325/06 , B01D2325/10 , B01D2325/26 , B01J23/40 , B01J35/065 , B01J37/0238 , C01B2203/0405 , H01M4/94 , H01M2004/8684 , Y10S55/05
摘要： A method of manufacturing a hydrogen separation membrane comprises the steps of forming an intermediate layer suitable for controlling oxidation of a hydrogen permeable metal layer on the surface of the hydrogen permeable metal layer on the surface of the hydrogen permeable metal used as a substrate; and attaching a catalytic metal in a granular form on the surface of the intermediate layer. This method can be used to manufacture a hydrogen separation membrane in which the quantity of catalytic metal used is controlled.
摘要翻译：制造氢分离膜的方法包括以下步骤：在用作基底的氢渗透性金属的表面上形成适于控制氢可渗透金属层表面上的氢可渗透金属层的氧化的中间层; 以及在所述中间层的表面上附着颗粒状的催化剂金属。该方法可用于制造控制所用催化金属的量的氢分离膜。

75. 发明申请

US20090200172A1 METHOD OF MANUFACTURING FUEL CELL 有权
标题翻译：制造燃料电池的方法
公开(公告)号：US20090200172A1
公开(公告)日：2009-08-13
申请号：US12096981
申请日：2006-12-06
申请人： Satoshi Aoyama
发明人： Satoshi Aoyama
IPC分类号： H01M8/12 , C25D7/00
CPC分类号： H01M4/94 , B01D53/228 , B01D67/0083 , B01D71/022 , B01D2323/08 , C01B3/505 , C01B2203/066 , H01M4/8885 , H01M4/9058 , H01M8/124 , H01M8/126 , H01M2004/8684 , H01M2300/0068 , Y02E60/525 , Y02P70/56
摘要： A method of manufacturing a fuel cell includes thermally treating a hydrogen permeable membrane in a given temperature higher than an actual operating temperature of the fuel cell, and forming an electrolyte layer on the hydrogen permeable membrane subjected to the thermal treatment. The hydrogen permeable membrane is composed of a polycrystalline metal.
摘要翻译：制造燃料电池的方法包括在比燃料电池的实际工作温度高的给定温度下对氢可渗透膜进行热处理，并在经过热处理的氢可渗透膜上形成电解质层。氢可渗透膜由多晶金属组成。

76. 发明申请

US20060173913A1 Image Processing Apparatus and Image Processing Method 审中-公开
标题翻译：图像处理装置和图像处理方法
公开(公告)号：US20060173913A1
公开(公告)日：2006-08-03
申请号：US11275660
申请日：2006-01-23
申请人： Satoshi Aoyama
发明人： Satoshi Aoyama
IPC分类号： G06F17/00 , G06F7/00
CPC分类号： H04N1/32128 , G06F16/51 , H04N2201/3236
摘要： The file name of an image file as a saving target is acquired (S401). A hash value is calculated on the basis of the acquired file name (S402). The image file as the saving target is saved in association with the data of the hash value.
摘要翻译：获取作为保存对象的图像文件的文件名（S401）。基于获取的文件名计算散列值（S 402）。作为保存目标的图像文件与散列值的数据相关联地保存。

77. 发明授权

US07001698B2 Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof 有权
标题翻译：用于干蚀刻半色调相移膜的方法和装置，半色调相移光掩模及其制备方法以及半导体电路及其制造方法
公开(公告)号：US07001698B2
公开(公告)日：2006-02-21
申请号：US10712032
申请日：2003-11-14
申请人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
发明人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A chromium-containing half-tone phase-shift photomask comprising coarse and dense patterns coexisting in a plane is prepared by a series of pattern-forming steps including forming a resist layer on a photomask blank, exposing and patterning said resist layer, developing, etching said photomask blank and removing said resist layer. Patterns for transferring onto a wafer are formed on the photomask blank by a dry-etching method comprising dry-etching a chromium-containing half-tone phase-shift film utilizing etching gas comprised of mixed gas including (a) reactive ion etching gas, containing an oxygen-containing gas and a halogen-containing gas, and (b) reducing gas added to the gas component (a).
摘要翻译：通过一系列图案形成步骤制备包含在平面中共存的粗和密集图案的含铬半色调相移光掩模，包括在光掩模坯料上形成抗蚀剂层，曝光和图案化所述抗蚀剂层，显影，蚀刻所述光掩模坯料和去除所述抗蚀剂层。用于转印到晶片上的图案通过干蚀刻方法形成在光掩模坯料上，该方法包括使用包括（a）反应性离子蚀刻气体的混合气体的蚀刻气体干法蚀刻含铬半色调相移膜，所述混合气体包含含氧气体和含卤素气体，（b）还原气体成分（a）中的气体。

78. 发明申请

US20050260506A1 Phase shift mask including a substrate with recess 有权
标题翻译：相移掩模，包括具有凹槽的基底
公开(公告)号：US20050260506A1
公开(公告)日：2005-11-24
申请号：US11133233
申请日：2005-05-20
申请人： Satoshi Aoyama
发明人： Satoshi Aoyama
IPC分类号： G03C5/00 , G03F1/30 , G03F1/68 , G03F7/20 , G03F9/00 , H01L21/027
CPC分类号： G03F1/44 , G03F1/30
摘要： A phase shift mask includes a quartz substrate having a main surface partially dug, and a Cr film deposited on the main surface. The dug portion includes an undercut provided such that the Cr film partially serves as an eaves, and the Cr film has a π opening exposing a portion of the dug portion, and a first subopening exposing an end of the dug portion.
摘要翻译：相移掩模包括具有部分切割的主表面的石英基板和沉积在主表面上的Cr膜。挖掘部分包括设置成使得Cr膜部分地用作屋檐的底切，并且Cr膜具有暴露部分挖出部分的pi开口，以及暴露出挖出部分的端部的第一开口。

79. 发明申请

US20050012533A1 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US20050012533A1
公开(公告)日：2005-01-20
申请号：US10889037
申请日：2004-07-13
申请人： Satoshi Aoyama , Atsuhiro Hayashi , Yasuhiko Takahashi
发明人： Satoshi Aoyama , Atsuhiro Hayashi , Yasuhiko Takahashi
IPC分类号： H03K19/0175 , G11C7/00 , H03H11/28 , H03H11/30 , H03K5/22 , H03K17/16 , H03K19/00 , H04L25/02
CPC分类号： H04L25/0278 , H03H11/30
摘要： A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.
摘要翻译：提供多组电路，每组电路通过与连接到外部端子的电阻元件相关联地使用阻抗控制电路产生阻抗代码，并且每个电路根据这种阻抗代码改变阻抗。阻抗控制电路包括阻抗比较器，该阻抗比较器等效于电阻元件和多组电路，并且与多个复制电路中的每一个执行阻抗比较，以形成增加阻抗的向上信号和向下信号降低阻抗。提供与多组电路的个体相邻的计数器，从而响应于上升信号和下降信号而产生阻抗代码。

80. 发明申请

US20050011862A1 Method and apparatus for dry-etching half-tone phase-shift films, half-tone phase-shift photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereof 有权
标题翻译：用于干蚀刻半色调相移膜的方法和装置，半色调相移光掩模及其制备方法以及半导体电路及其制造方法
公开(公告)号：US20050011862A1
公开(公告)日：2005-01-20
申请号：US10712032
申请日：2003-11-14
申请人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
发明人： Takaei Sasaki , Noriyuki Harashima , Satoshi Aoyama , Shouichi Sakamoto
IPC分类号： H01L21/302 , C23F4/00 , G03F1/32 , G03F1/68 , G03F1/80 , H01L21/306 , H01L21/3065 , C23F1/00
CPC分类号： G03F1/32 , C23F4/00 , H01J37/3266
摘要： A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
摘要翻译：干蚀刻方法包括干法蚀刻作为含铬半色调相移膜的金属薄膜的步骤，其特征在于，使用包括（a）和（c）的混合气体作为蚀刻气体，在对金属薄膜进行干蚀刻的工序中，含有含氧气体和含卤素气体的反应离子蚀刻气体和（b）添加到气体成分（a）中的还原气体。干蚀刻方法允许通过在用于含铬半色调相移掩模的光掩模坯料上形成要转印到晶片上的图案来生产半色调相移光掩模。光掩模又可用于制造半导体电路。该方法允许由于在平面中粗糙和致密图案的共存以及高精度图案蚀刻产品的生产而减小尺寸差异。

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