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71. 发明授权

US08101943B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08101943B2
公开(公告)日：2012-01-24
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

72. 发明授权

US08865511B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08865511B2
公开(公告)日：2014-10-21
申请号：US13295304
申请日：2011-11-14
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L35/24 , H01L51/00 , H01L27/28 , H01L51/05 , G11C13/00 , B82Y10/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的一个目的是提供一种以高成本低成本制造高性能且高可靠性的存储器件和设置有存储器件的半导体器件的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

73. 发明授权

US08608855B2 Electrode cover and evaporation device 有权
标题翻译：电极盖和蒸发装置
公开(公告)号：US08608855B2
公开(公告)日：2013-12-17
申请号：US11790383
申请日：2007-04-25
申请人： Nobuharu Ohsawa , Ryoji Nomura , Masahiro Takahashi
发明人： Nobuharu Ohsawa , Ryoji Nomura , Masahiro Takahashi
IPC分类号： C23C16/00
CPC分类号： C23C16/448 , C23C14/243 , C23C14/26 , H05B3/03
摘要： The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected.
摘要翻译：本发明提供了一种容易进行维护的蒸发装置，并且还提供一种能够防止蒸发材料粘附到电极上的电极盖。此外，本发明提供一种蒸发装置，其包括蒸发室; 用于保持待处理物体的保持部分; 蒸发源; 电极电极盖; 以及电源，其中蒸发室在上部包括保持部分，并且在下部包括蒸发源，电极和电极盖; 电极盖覆盖电极的暴露表面的至少一部分; 电极和电源电连接。

74. 发明授权

US07611965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07611965B2
公开(公告)日：2009-11-03
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

75. 发明申请

US20090065769A1 Semiconductor device amd method for manufacturing the same 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US20090065769A1
公开(公告)日：2009-03-12
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

76. 发明授权

US07371470B2 Pyran derivative 有权
标题翻译：吡喃衍生物
公开(公告)号：US07371470B2
公开(公告)日：2008-05-13
申请号：US11732637
申请日：2007-04-04
申请人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
发明人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
IPC分类号： B32B9/00
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1088 , H01L51/0051 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during vapor deposition; and a light-emitting device that is composed of the light-emitting elements are also disclosed. A pyran derivative is represented by the following general formula 1: wherein R1 is a hydrogen element or an alkoxy group.
摘要翻译：公开了可以容易地应用于真空气相沉积并显示长波长的光的发光化合物。另外，由于发生气相沉积时的发光化合物的碳化，发光元件的发光特性不好; 并且还公开了由发光元件组成的发光器件。吡喃衍生物由以下通式1表示：其中R 1是氢元素或烷氧基。

77. 发明授权

US07217465B2 Pyran derivative 有权
标题翻译：吡喃衍生物
公开(公告)号：US07217465B2
公开(公告)日：2007-05-15
申请号：US10968778
申请日：2004-10-19
申请人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
发明人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
IPC分类号： H05B33/14 , C09K11/06 , C07D45/14
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1088 , H01L51/0051 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during vapor deposition; and a light-emitting device that is composed of the light-emitting elements are also disclosed. A pyran derivative is represented by the following general formula 1: wherein R1 is a hydrogen element or an alkoxy group.
摘要翻译：公开了可以容易地应用于真空气相沉积并显示长波长的光的发光化合物。另外，由于发生气相沉积时的发光化合物的碳化，发光元件的发光特性不好; 并且还公开了由发光元件组成的发光器件。吡喃衍生物由以下通式1表示：其中R 1是氢元素或烷氧基。

78. 发明申请

US20070048970A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070048970A1
公开(公告)日：2007-03-01
申请号：US11510396
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L21/30
CPC分类号： H01L51/0024 , H01L27/3281 , H01L51/0021 , H01L51/003 , H01L51/56 , H01L2227/326 , H01L2251/5338 , Y02E10/549 , Y02P70/521
摘要： It is an object of the present invention to manufacture, with high yield, a semiconductor device in which an element that has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-formed layer over the separation layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and separating the separation layer and the element-formed layer from each other after pasting a first flexible substrate over the second conductive layer.
摘要翻译：本发明的目的是以高产率制造其中含有含有有机化合物的层的元件设置在柔性基板上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过形成无机化合物层，第一导电层和含有机化合物的层，形成与分离层上的元素形成层，形成与含有有机化合物和无机化合物的层接触的第二导电层层; 以及在所述第二导电层上粘贴第一柔性基板之后将所述分离层和所述元件形成层彼此分离。

79. 发明申请

US20070184304A1 Pyran derivative 有权
公开(公告)号：US20070184304A1
公开(公告)日：2007-08-09
申请号：US11732637
申请日：2007-04-04
申请人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
发明人： Sachiko Yamagata , Hiroko Abe , Nobuharu Ohsawa , Ryoji Nomura , Satoshi Seo
IPC分类号： H01L51/54 , H01L51/52
CPC分类号： C09K11/06 , C09K2211/1029 , C09K2211/1088 , H01L51/0051 , H01L51/5012 , H05B33/14 , Y10S428/917
摘要： A light-emitting compound that can be easily applied to vacuum vapor deposition and exhibit long wavelength light is disclosed. Further, a light-emitting element without inferior luminescence properties due to the carbonization of a light-emitting compound during vapor deposition; and a light-emitting device that is composed of the light-emitting elements are also disclosed. A pyran derivative is represented by the following general formula 1: wherein R1 is a hydrogen element or an alkoxy group.

80. 发明申请

US20070045621A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070045621A1
公开(公告)日：2007-03-01
申请号：US11510420
申请日：2006-08-25
申请人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
发明人： Tsunenori Suzuki , Ryoji Nomura , Mikio Yukawa , Nobuharu Ohsawa , Tamae Takano , Yoshinobu Asami , Takehisa Sato
IPC分类号： H01L29/08
CPC分类号： H01L27/12 , H01L27/1244 , H01L27/1266 , H01L27/1285 , H01L27/1292 , H01L29/78603
摘要： It is an object of the present invention to manufacture, with high yield, semiconductor devices in each of which an element which has a layer containing an organic compound is provided over a flexible substrate. A method for manufacturing a semiconductor device includes: forming a separation layer over a substrate; forming an element-forming layer by forming an inorganic compound layer, a first conductive layer, and a layer containing an organic compound over the separation layer, and forming a second conductive layer which is in contact with the layer containing an organic compound and the inorganic compound layer; and after attaching a first flexible substrate over the second conductive layer, separating the separation layer and the element-forming layer at the separation layer.
摘要翻译：本发明的一个目的是以高产率制造其中每个具有含有有机化合物的层的元件设置在柔性基底上的半导体器件。一种制造半导体器件的方法包括：在衬底上形成分离层; 通过在分离层上形成无机化合物层，第一导电层和含有有机化合物的层来形成元件形成层，以及形成与含有有机化合物和无机物的层接触的第二导电层复合层; 并且在第二导电层上安装第一柔性基板之后，在分离层处分离分离层和元件形成层。

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