专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明公开

EP2652774A2 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 失效转让
标题翻译：装置及其制造方法均匀的多孔SEMICONDUCTORS在基底上
公开(公告)号：EP2652774A2
公开(公告)日：2013-10-23
申请号：EP11876396.0
申请日：2011-11-03
申请人： Solexel, Inc.
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , TAMILMANI, Subramanian , KAMIAN, George , ASH-JAEE, Jay , YONEHARA, Takao
IPC分类号： H01L21/3063 , H01L21/306 , H01L21/02
CPC分类号： B81C99/0025 , B81C2201/0115 , C25D11/005 , C25D11/32 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L21/306 , H01L31/0284 , H01L31/18
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开允许均匀的多孔半导体层的高生产率制造控制（由单层或多层的多孔半导体的：如多孔硅，其包括单个孔隙率或多层多孔性的层）。一些应用包括MEMS分离的制造和用于分离和MEMS器件制造中，膜形成和浅沟槽隔离（STI）多孔硅（使用在最佳孔隙率的多孔硅的形成和随后的氧化）的牺牲层。此外，本发明适用于的光伏，MEMS，传感器的一般字段和致动器，包括，独立的，或与集成半导体微电子，半导体微电子和光电子芯片集成在一起。

72. 发明公开

EP2510552A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING SEMICONDUCTOR WAFERS 无效
标题翻译：高效率光伏背接触太阳能电池结构和工艺，用于使用半导体晶圆
公开(公告)号：EP2510552A2
公开(公告)日：2012-10-17
申请号：EP10836723.6
申请日：2010-12-09
申请人： Solexel, Inc.
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-josef , WANG, David, Xuan-qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel , HARWOOD, Duncan , MANSOORI, Majid , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.

73. 发明公开

EP2510551A2 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THIN PLANAR SEMICONDUCTORS 失效
标题翻译： Herstellungsverfahren von Solarzellen mitRückseitenkontaktenundRückseitenübergang
公开(公告)号：EP2510551A2
公开(公告)日：2012-10-17
申请号：EP10836710.3
申请日：2010-12-09
申请人： Solexel, Inc.
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef , WANG, David, Xuan-Qi , SEUTTER, Sean , RANA, Virendra, V. , CALCATERRA, Anthony , VAN KERSCHAVER, Emmanuel
IPC分类号： H01L31/042 , H01L31/0216
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.
摘要翻译：提供背面接触式太阳能电池及其制造方法。背面接合太阳能电池包括具有光吸收前侧表面的钝化层的衬底，掺杂的基极区域和具有极性与掺杂的基极区域相反的掺杂的背侧发射极区域。发射极上的背面钝化层和图案化的反射层形成一个光阱后视镜。交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

74. 发明公开

EP2427914A1 HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 审中-公开
标题翻译：高生产厂生产多孔SEMICONDUCTORS
公开(公告)号：EP2427914A1
公开(公告)日：2012-03-14
申请号：EP10772799.2
申请日：2010-05-05
申请人： Solexel, Inc.
发明人： KAMIAN, George , NAG, Somnath , TAMILMANI, Subbu , MOSLEHI, Mehrdad, M. , KRAMER, Karl-Josef , YONEHARA, Takao
IPC分类号： H01L31/00 , H01L31/09
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

75. 发明公开

EP2394296A1 TRENCH FORMATION METHOD FOR RELEASING A THIN-FILM SUBSTRATE FROM A REUSABLE SEMICONDUCTOR TEMPLATE 审中-公开
标题翻译： TOMB培训释的薄膜基板方法从可重复使用的半导体模板
公开(公告)号：EP2394296A1
公开(公告)日：2011-12-14
申请号：EP10739242.5
申请日：2010-02-08
申请人： Solexel, Inc.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L31/035281 , H01L21/76229 , H01L21/76232 , H01L31/03529 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

76. 发明公开

EP2356675A2 METHODS AND SYSTEMS FOR MANUFACTURING THIN-FILM SOLAR CELLS 有权
标题翻译：三维薄膜太阳能电池及其制造方法
公开(公告)号：EP2356675A2
公开(公告)日：2011-08-17
申请号：EP09826880.8
申请日：2009-11-13
申请人： Solexel, Inc.
发明人： WANG, David, Xuan-Qi , MOSLEHI, Mehrdad, M.
IPC分类号： H01L21/368
CPC分类号： H01L31/0236 , H01L21/3065 , H01L29/045 , H01L29/0657 , H01L31/022425 , H01L31/02363 , H01L31/035281 , H01L31/056 , H01L31/068 , H01L31/18 , H01L31/1804 , H01L31/182 , H01L31/1892 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521 , Y10T117/1092
摘要： Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

77. 发明申请

WO2016028825A1 PHOTOVOLTAIC SOLAR MODULE METALLIZATION AND DISTRIBUTED SHADE MANAGEMENT CONNECTION AND FABRICATION METHODS 审中-公开
标题翻译：光伏太阳能模块金属化和分布式阴影管理连接和制造方法
公开(公告)号：WO2016028825A1
公开(公告)日：2016-02-25
申请号：PCT/US2015/045775
申请日：2015-08-18
申请人： SOLEXEL, INC.
发明人： MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/0224 , H01L31/05
CPC分类号： H01L31/022458 , H01L31/022441 , H01L31/042 , H01L31/044 , H01L31/0443 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Solar cell structures having improved efficiency and distributed shade management including a plurality of back-contact solar cells, each having a passivated backside opposite a light receiving frontside, a first metal layer on the passivated backside, the first metal layer having base and emitter metallization, an electrically insulating backplane layer attached to the backsides of each of the plurality of back contact solar cells and covering the first metal layer, via holes through the continuous backplane layer to portions of the base and emitter metallization, a second metal layer contacting the first metal layer through the via holes and electrically connecting at least two of the plurality of back-contact solar cells forming a shade management block comprising at least a fraction of one of the plurality of back-contact solar cells, the shade management block having at least two opposite polarity terminals and a bypass switch electrically connected to the opposite polarity terminals.
摘要翻译：具有提高效率和分散阴影管理的太阳能电池结构，包括多个背接触太阳能电池，每个背接触太阳能电池具有与光接收前侧相反的钝化背面，钝化背面上的第一金属层，具有基极和发射极金属化的第一金属层，电绝缘背板层，其附接到所述多个背接触太阳能电池中的每一个的背面，并且覆盖所述第一金属层，穿过所述连续背板层的通孔到所述基极和发射极金属化的部分;第二金属层，并且电连接多个背接触太阳能电池中的至少两个，形成包括多个背接触太阳能电池中的一个的至少一部分的阴影管理块，阴影管理块具有至少两个电极连接到相反极性端子的旁路开关阿尔斯。

78. 发明申请

WO2015130989A1 SELF ALIGNED CONTACTS FOR BACK CONTACT SOLAR CELLS 审中-公开
标题翻译：反接触太阳能电池的自对准联系人
公开(公告)号：WO2015130989A1
公开(公告)日：2015-09-03
申请号：PCT/US2015/017852
申请日：2015-02-26
申请人： SOLEXEL, INC.
发明人： DESHPANDE, Anand , KAPUR, Pawan , MOSLEHI, Mehrdad, M. , RANA, Virendra, V. , SEUTTER, Sean, M.
IPC分类号： H01L31/0224 , H01L31/049 , H01L31/04
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： According to one aspect of the disclosed subject matter, self aligned contacts for a back contact back junction solar cell are provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A first metal layer having base and emitter electrodes self aligned to base and emitter regions is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.
摘要翻译：根据所公开的主题的一个方面，提供了用于背接触背面太阳能电池的自对准触点。太阳能电池包括具有光接收前侧和与前侧相对的背面并附接到电绝缘背板的半导体层。具有与基极和发射极区域自对准的基极和发射极电极的第一金属层位于半导体层背面。提供电池互连并通过插头连接到第一金属层的图案化的第二金属层位于背板上。

79. 发明申请

WO2015106298A1 DISCONTINUOUS EMITTER AND BASE ISLANDS FOR BACK CONTACT SOLAR CELLS 审中-公开
标题翻译：反接触式太阳能电池不连续的发射器和基座
公开(公告)号：WO2015106298A1
公开(公告)日：2015-07-16
申请号：PCT/US2015/011279
申请日：2015-01-13
申请人： SOLEXEL, INC.
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, Karl-Josef
IPC分类号： H01L31/0224
CPC分类号： H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Back contact solar cells having a discontinuous emitter comprising a plurality of emitter islands are provided. The back contact solar cell comprises a semiconductor layer with a background base doping and having a sunlight-receiving frontside and a backside opposite said sunlight-receiving frontside. An emitter layer having a doping opposite said semiconductor layer background doping is positioned on the semiconductor layer backside. A trench isolation pattern partitions the emitter layer and semiconductor layer into a plurality of discontinuous emitter regions on the semiconductor layer backside. At least one base island region contacting the semiconductor layer is positioned within each of the discontinuous emitter regions on the semiconductor layer backside.
摘要翻译：提供具有包括多个发射岛的不连续发射体的背接触太阳能电池。背接触太阳能电池包括具有背景基底掺杂并具有阳光接收的前沿和与阳光接收的前侧相对的背面的半导体层。具有与所述半导体层背景掺杂相反的掺杂的发射极层位于半导体层的背面。沟槽隔离图案将发射极层和半导体层分隔成半导体层背面上的多个不连续的发射极区域。接触半导体层的至少一个基岛区域位于半导体层背面的每个不连续发射极区域内。

80. 发明申请

WO2014062850A1 SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES IN PHOTOVOLTAIC SOLAR CELLS AND MODULES 审中-公开
标题翻译：光伏太阳能电池和模块中单片并置旁路开关的系统与方法
公开(公告)号：WO2014062850A1
公开(公告)日：2014-04-24
申请号：PCT/US2013/065316
申请日：2013-10-16
申请人： SOLEXEL, INC.
发明人： MOSLEHI, Mehrdad, M.
IPC分类号： H01L31/042
CPC分类号： H01L31/0443 , H01L27/1421 , H01L31/02008 , H01L31/0201 , H01L31/02021 , H01L31/022441 , H01L31/022458 , H01L31/049 , H01L31/0504 , H01L31/0512 , H01L31/0516 , H01L31/0682 , Y02B10/12 , Y02E10/50 , Y02E10/547
摘要： Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass switch comprising a semiconductor layer having background doping, a frontside, and a backside is provided. A patterned first level metal is positioned on the layer backside and an electrically insulating backplane is positioned on the first level metal. A trench isolation pattern partitions the semiconductor layer into a solar cell region and at least one monolithically integrated bypass switch region. A patterned second level metal is positioned on the electrically insulating backplane and which connects to the first level metal through the backplane to complete the electrical metallization of the monolithically integrated solar cell and bypass switch structure.
摘要翻译：提供具有集成旁路开关的太阳能电池的结构和方法。根据一个实施例，提供了一种集成的太阳能电池和旁路开关，其包括具有背景掺杂，前侧和背面的半导体层。图案化的第一级金属位于层背面，电绝缘背板位于第一级金属上。沟槽隔离图案将半导体层分隔成太阳能电池区域和至少一个单片集成旁路开关区域。图案化的第二级金属位于电绝缘背板上，并且通过底板连接到第一级金属，以完成单片集成太阳能电池和旁路开关结构的电气金属化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式