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71. 发明申请

US20170277037A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
公开(公告)号：US20170277037A1
公开(公告)日：2017-09-28
申请号：US15460454
申请日：2017-03-16
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Koji Hasegawa
IPC分类号： G03F7/039 , C08F220/28 , C08F220/36 , G03F7/32 , G03F7/004 , G03F7/20 , G03F7/38 , G03F7/16 , C08F220/30
CPC分类号： G03F7/039 , C08F220/28 , C08F220/30 , C08F220/36 , C08F220/52 , C08F226/06 , C08F2220/282 , C08F2220/283 , C08F2220/301 , C08F2220/365 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2041 , G03F7/322 , G03F7/325 , G03F7/327 , G03F7/38
摘要： A resist composition is provided comprising a polymer comprising recurring units (a) having a succinimide structure and recurring units (b) containing a group capable of polarity switch with the aid of acid. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.

72. 发明授权

US09760010B2 Patterning process 有权
公开(公告)号：US09760010B2
公开(公告)日：2017-09-12
申请号：US15176967
申请日：2016-06-08
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Teppei Adachi
IPC分类号： G03F7/00 , G03F7/38 , G03F7/16 , C08F220/22 , C08F220/24 , G03F7/32 , C08F220/38 , G03F7/26 , C08L33/16 , G03F7/20 , C08F220/26 , B05D3/04 , B05D3/00 , H01L21/027 , B05D1/00 , G03F7/004 , G03F7/039 , G03F7/11 , H01L21/308
CPC分类号： G03F7/38 , B05D1/005 , B05D3/007 , B05D3/0433 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , C08L33/16 , C08L2205/025 , G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/26 , G03F7/32 , H01L21/0274 , H01L21/3081
摘要： A pattern is formed by coating a resist composition comprising a fluorine-containing polymer, a base resin, an acid generator, and an organic solvent, baking the composition at 50-300° C. in an atmosphere of a solvent having a boiling point of 60-250° C., exposure, and development. In immersion lithography, the resist film is improved in water repellency and water slip, and LWR after pattern formation is reduced. In EB or EUV lithography, outgassing is suppressed and LWR is reduced.

73. 发明授权

US09752045B2 Conductive polymer composite and substrate 有权
公开(公告)号：US09752045B2
公开(公告)日：2017-09-05
申请号：US15225221
申请日：2016-08-01
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Takayuki Nagasawa , Koji Hasegawa
IPC分类号： H01B1/12 , C09D133/14 , C09D5/24 , C08F20/38 , C08F12/30 , C08F22/24 , C08F20/28 , C08L33/14 , C09D125/18 , C09D135/02 , C08L35/02 , C08F12/20 , C08F12/22 , C08F212/14 , C08F12/24
CPC分类号： C09D133/14 , C08F12/20 , C08F12/22 , C08F12/24 , C08F12/30 , C08F20/28 , C08F20/38 , C08F22/24 , C08F212/14 , C08F2500/04 , C08F2500/26 , C08L33/14 , C08L35/02 , C08L2201/10 , C08L2203/16 , C08L2203/20 , C09D5/24 , C09D7/65 , C09D125/18 , C09D135/02 , H01B1/12 , H01B1/125 , H01B1/127 , H01L51/0036 , H01L51/442 , Y02E10/549 , C08F2220/382
摘要： The present invention provides a conductive polymer composite including: (A) a π-conjugated polymer, and (B) a dopant polymer which contains a repeating unit “a” shown by the following general formula (1) and having a weight-average molecular weight in the range of 1,000 to 500,000. There can be provided a conductive polymer composite which has excellent filterability and film-formability by spin coating, and can form a conductive film having high transparency and excellent flatness. wherein R1 represents a hydrogen atom or a methyl group; R2 represents any of a single bond, an ester group, and a linear, branched, or cyclic hydrocarbon group having 1 to 12 carbon atoms, the hydrocarbon group optionally containing an ether group, an ester group, or both; “Z” represents any of a single bond, a phenylene group, a naphthylene group, an ether group, and an ester group; and “a” is a number satisfying 0

74. 发明授权

US09663656B2 Conductive polymer material and substrate 有权
公开(公告)号：US09663656B2
公开(公告)日：2017-05-30
申请号：US14831452
申请日：2015-08-20
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Takayuki Nagasawa
IPC分类号： H01B1/04 , C08L81/02 , H01B1/12 , C08L65/00 , H01L51/00
CPC分类号： C08L81/02 , C08G2261/1424 , C08G2261/314 , C08G2261/3221 , C08G2261/3223 , C08G2261/3225 , C08G2261/3226 , C08G2261/512 , C08G2261/794 , C08L25/18 , C08L33/16 , C08L65/00 , C09D11/52 , H01B1/125 , H01L51/0037 , C08K5/03 , C08K5/09
摘要： A conductive polymer material includes a π-conjugated polymer, dopant polymer which contains a repeating unit having a sulfo group and has a weight-average molecular weight in the range of 1,000 to 500,000, and amphoteric ion compound represented by the following general formula (1), wherein RC1 and RC2 independently represent a linear, branched, or cyclic alkyl group having 1 to 10 carbon atoms, a linear, branched, or cyclic alkoxy group having 1 to 10 carbon atoms, an acyl group having 2 to 10 carbon atoms, an acyloxy group having 2 to 10 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, a hydroxyl group, a nitro group, a halogen atom; and “m” and “n” are each an integer of 0 to 4. A conductive polymer material with low acidity that suppresses the agglomeration of particles with overtime, with an excellent stability in a solution state can be provided.

75. 发明授权

US09658532B2 Pattern forming process 有权
公开(公告)号：US09658532B2
公开(公告)日：2017-05-23
申请号：US15203028
申请日：2016-07-06
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama
IPC分类号： G06F7/40 , G03F7/38 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , C08F220/26 , C08F220/24 , C08F220/22 , C08F220/38 , B05D1/00 , B05D3/04 , H01L33/16
CPC分类号： G03F7/38 , B05D1/005 , B05D3/0453 , C08F220/18 , C08F220/22 , C08F220/24 , C08F220/26 , C08F220/38 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/168 , G03F7/2041 , G03F7/2053 , G03F7/325 , G03F7/40 , H01L33/16 , C08F2220/1866 , C08F2220/282 , C08F220/20 , C09D133/10 , C08L33/16
摘要： A negative tone pattern is formed by coating a resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB the resist film in a high-humidity environment, and developing the resist film in an organic solvent developer. PEB in a high-humidity environment is effective for reducing the shrinkage of the resist film during the step and thus preventing the trench pattern from deformation.

76. 发明授权

US09632416B2 Rinse solution for pattern formation and pattern forming process 有权
公开(公告)号：US09632416B2
公开(公告)日：2017-04-25
申请号：US14952669
申请日：2015-11-25
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Daisuke Kori , Tsutomu Ogihara
IPC分类号： G03F7/40 , G03F7/32 , G03F7/039 , G03F7/11
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/11 , G03F7/322 , G03F7/405
摘要： In a resist pattern forming process, a rinse solution comprising (A) a heat/acid-decomposable polymer and (B) water is effective. The pattern forming process using the rinse solution is successful in forming fine feature size patterns while minimizing the occurrence of pattern collapse. High-throughput processing is possible.

77. 发明授权

US09620363B2 Underlayer film-forming composition and pattern forming process 有权
公开(公告)号：US09620363B2
公开(公告)日：2017-04-11
申请号：US14296119
申请日：2014-06-04
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Daisuke Kori , Tsutomu Ogihara
IPC分类号： G03F7/11 , H01L21/027 , C08G8/04 , H01L21/266 , G03F7/09 , G03F7/42 , G03F7/075
CPC分类号： H01L21/0276 , C08G8/04 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/425 , H01L21/266
摘要： In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.

78. 发明授权

US09618850B2 Pattern forming process and shrink agent 有权
公开(公告)号：US09618850B2
公开(公告)日：2017-04-11
申请号：US14918782
申请日：2015-10-21
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Kazuhiro Katayama , Koji Hasegawa , Kenji Funatsu
IPC分类号： G03F7/11 , G03F7/40 , G03F7/32 , G03F7/004 , C08F22/22 , C08F226/02 , C08F26/02 , C08F220/26 , C08F226/06 , C08F220/34 , C08F220/30 , H01L21/027 , C08F220/36 , G03F7/039
CPC分类号： G03F7/405 , C08F22/22 , C08F26/02 , C08F220/26 , C08F220/30 , C08F220/34 , C08F220/36 , C08F226/02 , C08F226/06 , G03F7/0045 , G03F7/0397 , G03F7/11 , G03F7/325 , G03F7/40 , H01L21/0274
摘要： A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units having an acid labile group-substituted hydroxyl and/or carboxyl group in a C7-C16 ester or C8-C16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.

79. 发明申请

US20170031243A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS 有权
标题翻译：耐蚀组合物和图案形成过程
公开(公告)号：US20170031243A1
公开(公告)日：2017-02-02
申请号：US15210025
申请日：2016-07-14
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Koji Hasegawa
IPC分类号： G03F7/038 , C08F222/20 , G03F7/32 , C08F216/14 , G03F7/16 , G03F7/20 , C08F222/40 , C08F228/02
CPC分类号： G03F7/0392 , C08F18/20 , C08F216/1416 , C08F220/18 , C08F220/28 , C08F220/60 , C08F222/20 , C08F222/40 , C08F224/00 , C08F226/02 , C08F226/06 , C08F228/02 , C08F228/06 , C08F2222/404 , C08F2222/408 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/085 , G03F7/162 , G03F7/168 , G03F7/2041 , G03F7/2053 , G03F7/30 , G03F7/325 , C08F2220/283 , C08F2220/1891 , C08F2220/1866 , C08F220/20 , C08F2220/1841 , C08F220/24 , C09D133/10 , C08L33/16 , C09D139/04 , C09D143/02
摘要： A resist composition is provided comprising a polymer comprising recurring units (a) having an oxazolidinedione, thioxooxazolidinone, thiazolidinedione or thioxothiazolidinone structure and recurring unit (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.
摘要翻译：提供的抗蚀剂组合物包含含有具有恶唑烷二酮，硫代恶唑烷酮，噻唑烷二酮或硫代噻唑烷酮结构的重复单元（a）和具有酸不稳定基取代的羧基的重复单元（b1）和/或具有酸的重复单元（b2）不稳定基团取代的酚羟基。抗蚀剂组合物抑制酸扩散，表现出高分辨率，并且形成具有低边缘粗糙度的令人满意的轮廓的图案。

80. 发明授权

US09507262B2 Resist top-coat composition and patterning process 有权
标题翻译：抗顶层涂层组合和图案化工艺
公开(公告)号：US09507262B2
公开(公告)日：2016-11-29
申请号：US14622291
申请日：2015-02-13
申请人： Shin-Etsu Chemical Co., Ltd. , Samsung Electronics Co., Ltd.
发明人： Jun Hatakeyama , Hyun-Woo Kim
IPC分类号： G03F7/09 , G03F7/20 , G03F7/11
CPC分类号： G03F7/091 , G03F7/11 , G03F7/2041
摘要： There are provided a top coat composition and a patterning process using that composition, which reduce the effect of contaminants in the surrounding atmosphere on the resist film in absorbing OOB light and in reducing film loss of the resist pattern and bridging between patterns, and also enhances the sensitivity of the resist film and suppresses the emission of outgas from the resist film. The resist top coat composition of the present invention is formed on a photoresist film formed on a wafer, and is used in a patterning process performed by lithography in which, after exposure, developing is performed. The resist top coat composition contains a polymer as a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown by the following general formula (1), a C6-C10 ether compound, and a C7-C12 hydrocarbon compound, and wherein m is 1 or 2, and p is in the range of 0
摘要翻译：提供了一种使用该组合物的面漆组合物和图案化工艺，其在吸收OOB光时降低了在抗蚀剂膜上的污染物在抗蚀剂膜上的影响并降低了抗蚀剂图案的膜损耗和图案之间的桥接，并且还增强了抗蚀剂膜的灵敏度并抑制从抗蚀剂膜发出的气体。本发明的抗蚀面漆组合物形成在形成在晶片上的光致抗蚀剂膜上，用于通过光刻进行的图案化处理，其中曝光后进行显影。抗蚀剂面漆组合物含有作为基础树脂的聚合物，其具有由以下通式（1）表示的具有1,1,1,3,3,3-六氟-2-丙醇的苯乙烯的重复单元p，a C6-C10醚化合物和C7-C12烃化合物，其中m为1或2，p在0

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