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71. 发明申请

US20090093335A1 TRANSMISSION AND POWER TRANSMITTING SYSTEM 有权
标题翻译：传动和发电系统
公开(公告)号：US20090093335A1
公开(公告)日：2009-04-09
申请号：US12241448
申请日：2008-09-30
申请人： Yoshimitsu YOKOUCHI , Hideto Watanabe , Kunio Takeda , Masayuki Tanaka
发明人： Yoshimitsu YOKOUCHI , Hideto Watanabe , Kunio Takeda , Masayuki Tanaka
IPC分类号： F16H3/44
CPC分类号： B60W20/30 , B60K1/02 , B60K6/365 , B60K6/445 , B60K6/547 , B60W10/02 , B60W10/06 , B60W10/08 , B60W10/115 , B60W20/00 , B60W2510/244 , B60W2520/10 , B60W2540/10 , F16H3/727 , F16H2037/0866 , F16H2200/2007 , Y02T10/6239 , Y02T10/6286
摘要： A transmission includes: a plurality of rotating elements interposed between a driving source and an output portion; a rotating member that rotatably supports one of the rotating elements and is formed at a radially outer portion thereof with a plurality of recesses or protrusions; a support member having a surface, that is facing the rotating member, and a plurality of protrusions or recesses that are formed in a radially inner portion thereof and engage with the recesses or protrusions of the rotating member, the rotating member being mounted in the support member such that the rotating member is not able to rotate; and a friction producing mechanism that is provided between the rotating member and the above-indicated surface of the support member and is arranged to produce a frictional force between the rotating member and the surface of the support member.
摘要翻译：变速器包括：插入驱动源和输出部之间的多个旋转元件; 旋转构件，其可旋转地支撑所述旋转元件中的一个并且在其径向外侧部分处形成有多个凹部或突起; 具有面向旋转构件的表面的支撑构件和形成在其径向内部并与旋转构件的凹部或突起接合的多个突起或凹部，旋转构件安装在支撑件构件，使得旋转构件不能旋转; 以及摩擦产生机构，其设置在所述旋转构件和所述支撑构件的上述表面之间，并且被布置成在所述旋转构件和所述支撑构件的表面之间产生摩擦力。

72. 发明申请

US20090001448A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090001448A1
公开(公告)日：2009-01-01
申请号：US12118328
申请日：2008-05-09
申请人： Katsuyuki Sekine , Masayuki Tanaka , Katsuaki Natori , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Akihito Yamamoto
发明人： Katsuyuki Sekine , Masayuki Tanaka , Katsuaki Natori , Daisuke Nishida , Ryota Fujitsuka , Yoshio Ozawa , Akihito Yamamoto
IPC分类号： H01L29/00 , H01L21/3205
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/0228 , H01L21/02337 , H01L21/3141 , H01L21/31612 , H01L27/115 , H01L27/11521 , H01L29/40114 , H01L29/42324
摘要： A semiconductor memory device having a cell size of 60 nm or less includes a tunnel insulation film formed in a channel region of a silicon substrate containing a burying insulation film, a first conductive layer formed on the tunnel insulation film, an inter-electrode insulation film formed on the burying insulation film and the first conductive layer, a second conductive layer formed on the inter-electrode insulation film, a side wall insulation film formed on the side walls of the first conductive layer, the second conductive layer, and the inter-electrode insulation film, and an inter-layer insulation film formed on the side wall insulation film. The tunnel insulation film or the inter-electrode insulation film contains a high-dielectric insulation film. The side wall insulation film contains a predetermined concentration of carbon and nitrogen as well as chlorine having a concentration of 1×1019 atoms/cm3 or less.
摘要翻译：具有60nm以下的单元尺寸的半导体存储器件包括形成在包含掩埋绝缘膜的硅衬底的沟道区域中的隧道绝缘膜，形成在隧道绝缘膜上的第一导电层，电极间绝缘膜形成在掩埋绝缘膜和第一导电层上的第二导电层，形成在电极间绝缘膜上的第二导电层，形成在第一导电层，第二导电层和第二导电层的侧壁上的侧壁绝缘膜，电极绝缘膜和形成在侧壁绝缘膜上的层间绝缘膜。隧道绝缘膜或电极间绝缘膜包含高介电绝缘膜。侧壁绝缘膜含有预定浓度的碳氮，以及浓度为1×1019原子/ cm3以下的氯。

73. 发明申请

US20080170377A1 MANIPULATION INPUT DEVICE AND ELECTRONIC INSTRUMENT USING THE SAME 审中-公开
标题翻译：操作输入装置和使用该装置的电子仪器
公开(公告)号：US20080170377A1
公开(公告)日：2008-07-17
申请号：US11969276
申请日：2008-01-04
申请人： Takeshi Miyasaka , Masayuki Tanaka
发明人： Takeshi Miyasaka , Masayuki Tanaka
IPC分类号： H05K7/00
CPC分类号： H01H19/005 , H01H25/041 , H01H2019/006 , H01H2025/043 , H01H2025/048
摘要： A manipulation input device includes a base, a printed-circuit board adhered to the base, a manipulation member, a pressing projection, and a manipulation dial. A plurality of push-button switches and a magnetic-field detection element are mounted on the printed-circuit board. The manipulation member has a ring-shape plate spring and a pedestal portion. The pressing projection press-contacts the push-button switch by fixing a mounting portion to an outer circumferential edge of the upper surface of the base. The pressing projection is provided toward a lower surface of the pedestal portion. The mounting portion is extended downward from an outer circumferential edge portion of the ring-shape plate spring. A ring magnet is assembled in a lower surface of the manipulation dial. N poles and S poles are alternatively arranged in the ring magnet. The manipulation dial is rotatably assembled in an upper surface of the pedestal portion.
摘要翻译：操作输入装置包括基座，粘附到基座的印刷电路板，操纵构件，按压突起和操纵拨盘。多个按钮开关和磁场检测元件安装在印刷电路板上。操作构件具有环形板簧和基座部。按压突起通过将安装部固定到基部的上表面的外周边缘而按压按钮开关。按压突起朝向基座部的下表面设置。安装部从环状板簧的外周缘部向下方延伸。环形磁铁组装在操作盘的下表面。 N极和S极交替地布置在环形磁铁中。操作盘可旋转地组装在基座部分的上表面中。

74. 发明授权

US07387934B2 Nonvolatile semiconductor memory and manufacturing method for the same 有权
标题翻译：非易失性半导体存储器及其制造方法相同
公开(公告)号：US07387934B2
公开(公告)日：2008-06-17
申请号：US11267331
申请日：2005-11-07
申请人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
发明人： Yoshio Ozawa , Masayuki Tanaka , Fumitaka Arai
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： The memory cell matrix encompasses (a) a plurality device isolation films running along column direction, (b) first conductive layers arranged along row and column-directions, adjacent groups of the first conductive layers are isolated from each other by the device isolation film disposed between the adjacent groups, (c) lower inter-electrode dielectrics arranged respectively on crests of the corresponding first conductive layers, (d) an upper inter-electrode dielectric arranged on the lower inter-electrode dielectric made of insulating material different from the lower inter-electrode dielectrics, and (e) second conductive layers running along the row-direction, arranged on the upper inter-electrode dielectric.
摘要翻译：存储单元矩阵包括（a）沿着列方向延伸的多个器件隔离膜，（b）沿着行和列方向布置的第一导电层，相邻的第一导电层组通过设置隔离膜彼此隔离（c）分别布置在相应的第一导电层的顶部上的下部电极间电介质，（d）布置在由绝缘材料制成的下部电极间电介质上的上部电极间电介质， - 电极介质，和（e）布置在上部电极间电介质上的沿着行方向延伸的第二导电层。

75. 发明申请

US20070284652A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20070284652A1
公开(公告)日：2007-12-13
申请号：US11783141
申请日：2007-04-06
申请人： Takuya Kobayashi , Katsuyuki Sekine , Yoshio Ozawa , Masayuki Tanaka
发明人： Takuya Kobayashi , Katsuyuki Sekine , Yoshio Ozawa , Masayuki Tanaka
IPC分类号： H01L29/792
CPC分类号： H01L29/513 , H01L29/40117 , H01L29/517
摘要： A semiconductor memory device capable of suppressing detrapping of stored charges from a charge storage dielectric is disclosed. According to one aspect of the present invention, there is provided a semiconductor memory device comprising a semiconductor substrate, a blocking dielectric disposed on the semiconductor substrate a charge storage dielectric disposed on the blocking dielectric to store holes, a hole conductive dielectric disposed on the charge storage dielectric, and a gate electrode disposed on the hole conductive dielectric.
摘要翻译：公开了能够抑制存储电荷从电荷存储电介质中去除的半导体存储器件。根据本发明的一个方面，提供了一种半导体存储器件，其包括半导体衬底，设置在半导体衬底上的阻挡电介质，设置在阻挡电介质上以存储孔的电荷存储电介质，设置在电荷上的导电电介质存储电介质和设置在导电电介质上的栅电极。

76. 发明申请

US20070215958A1 Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070215958A1
公开(公告)日：2007-09-20
申请号：US11798593
申请日：2007-05-15
申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
IPC分类号： H01L29/94
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/28247 , H01L21/28518 , H01L21/3185 , H01L21/76838 , H01L21/76897 , H01L29/40117 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/792
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜，包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在下氮化硅膜比上述氮化硅膜高。

77. 发明申请

US20070134227A1 Catalyst for cleaving sugar chain 审中-公开
标题翻译：用于切割糖链的催化剂
公开(公告)号：US20070134227A1
公开(公告)日：2007-06-14
申请号：US10551550
申请日：2004-03-31
申请人： Masayuki Tanaka , Mamoru Kyogashima
发明人： Masayuki Tanaka , Mamoru Kyogashima
IPC分类号： A61K38/47 , C07H21/04 , C08B37/00 , C12N9/24 , C12P19/04 , C12P21/06
CPC分类号： C12N9/2408 , A61K38/1709
摘要： A catalyst which is capable of specifically cleaving one sugar chain or two or more sugar chains selected from the group consisting of hyaluronic acid, chondroitin sulfate A, chondroitin sulfate C and chondroitin sulfate D; a cleavage agent specific for the sugar chains; a medicament which is used for specifically cleaving the sugar chains in a living body tissue; a method for specifically cleaving the sugar chains; a method for specifically producing the sugar chain having a decreased molecular weight; and production methods for the catalyst, the cleavage agent and the medicament.
摘要翻译：一种能够特异性切割选自透明质酸，硫酸软骨素A，硫酸软骨素C和硫酸软骨素D中的一种糖链或两种或更多种糖链的催化剂; 针对糖链的切割剂; 用于特异性切割活体组织中的糖链的药物; 专门切割糖链的方法; 专门生产分子量降低的糖链的方法; 以及催化剂，裂解剂和药物的制备方法。

78. 发明授权

US07194823B2 Clothes drier 有权
标题翻译：干衣机
公开(公告)号：US07194823B2
公开(公告)日：2007-03-27
申请号：US10999945
申请日：2004-12-01
申请人： Shigeharu Nakamoto , Hidetaka Yabuuchi , Hajime Nojima , Masayuki Tanaka
发明人： Shigeharu Nakamoto , Hidetaka Yabuuchi , Hajime Nojima , Masayuki Tanaka
IPC分类号： F26B21/00 , F26B21/06
CPC分类号： D06F58/206 , D06F2058/2874
摘要： A clothes drying apparatus includes a heat pump mechanism, an air path for guiding drying air into a drying drum accommodating therein clothes, a blower for supplying drying air to the air path, and a controller for controlling a driving of a compressor, wherein the controller operates the blower and the compressor during a drying operation; stops the compressor in case the drying operation is suspended; and operates, in case the drying operation is resumed, the compressor after a certain time period has elapsed since the compressor had stopped. In case employing the heat pump mechanism having the compressor as a heat source, it is possible to reduce a load on the compressor and allow temperature of warm air to rapidly return by using the heat pump mechanism.
摘要翻译：衣物干燥装置包括热泵机构，用于将干燥空气引导到容纳衣物的干燥滚筒中的空气通道，用于向空气路径供应干燥空气的鼓风机和用于控制压缩机的驱动的控制器，其中控制器在干燥操作期间操作鼓风机和压缩机; 如果干燥操作暂停，则停止压缩机; 并且在恢复干燥操作的情况下操作，压缩机在从压缩机停止之后经过一段时间后经过。在使用具有压缩机的热泵机构作为热源的情况下，可以减少压缩机的负荷，并且通过使用热泵机构使暖空气的温度快速返回。

79. 发明授权

US07148158B2 Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US07148158B2
公开(公告)日：2006-12-12
申请号：US10916500
申请日：2004-08-12
申请人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
发明人： Yoshio Ozawa , Masayuki Tanaka , Kiyotaka Miyano , Shigehiko Saida
IPC分类号： H01L21/338 , H01L21/8238 , H01L21/336 , H01L21/4763 , H01L21/44
CPC分类号： H01L29/4983 , H01L29/41783 , H01L29/6656
摘要： A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1–30 atomic % of chlorine.

80. 发明授权

US07060555B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07060555B2
公开(公告)日：2006-06-13
申请号：US10895144
申请日：2004-07-21
申请人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Shigehiko Saida , Yoshitaka Tsunashima
IPC分类号： H01L21/336
CPC分类号： H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/3185 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76826 , H01L21/76831 , H01L21/76834 , H01L21/76879 , H01L21/76897 , H01L23/485 , H01L27/10873 , H01L2924/0002 , H01L2924/00
摘要： Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

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