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    • 72. 发明授权
    • Using mobile application logs to measure and maintain accuracy of business information
    • 使用移动应用程序日志来衡量和保持业务信息的准确性
    • US08832116B1
    • 2014-09-09
    • US13348563
    • 2012-01-11
    • Fang ChuBo ZhengGang FengDylan Myers
    • Fang ChuBo ZhengGang FengDylan Myers
    • G06F17/30
    • G06Q10/0637
    • Business information about business entities are received from a plurality of aggregate information sources such as business directories. Mobile application logs about user activities are received from a plurality of mobile devices. Business entities related to the user activities are identified based on the mobile application logs. Scored attributes about the related business entities are acquired by applying data analysis rules to the mobile application logs. Accuracy scores are determined for attribute values in the business information based on the acquired scored attributes. Updated business information for the business entities is generated based on the accuracy scores and outputted to users upon request.
    • 从业务目录等多个聚合信息源接收关于业务实体的业务信息。 从多个移动设备接收关于用户活动的移动应用日志。 基于移动应用程序日志识别与用户活动相关的业务实体。 通过将数据分析规则应用于移动应用程序日志来获取有关业务实体的分数属性。 基于所获得的评分属性,确定商业信息中的属性值的准确度分数。 业务实体的更新业务信息根据准确度分数生成,并根据要求输出给用户。
    • 74. 发明授权
    • Method for removing native oxide and associated residue from a substrate
    • 从底物中除去天然氧化物和相关残留物的方法
    • US08772162B2
    • 2014-07-08
    • US13906543
    • 2013-05-31
    • Bo ZhengArvind SundarrajanXinyu Fu
    • Bo ZhengArvind SundarrajanXinyu Fu
    • H01L21/44
    • H01L21/02063H01J37/32082H01L21/02057H01L21/0206H01L21/28518H01L21/28556H01L21/28568H01L21/743H01L21/768
    • Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.
    • 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺,从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨(NH 3)和三氟化氮(NF 3)气体的混合物中产生清洁等离子体,从而将清洁等离子体的产物冷凝在天然氧化物上,从而去除在基底表面上形成的天然氧化物,形成薄膜, 含有六氟硅酸铵((NH 4)2 SiF 6),并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体,第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应,形成四氟化硅(SiF4)并提取薄膜的残留物。